• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.13 no.2
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• pp.67-73
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• 2007

A respiration rate analysed by enzyme kinetics-based respiration model and gas permeability data of LDPE film were applied to design the optical modified atmosphere (MA) packaging condition of persimmon (Diospyros kaki cv. Fuyu) fruits. The fruit quality rapidly decreases due to physiology disorder such as softening and peel blackening. $O_2$ permeance ($Q_{O2}$ in $ml{\cdot}hr^{-1}{\cdot}atm^{-1}{\cdot}m^{-2}$) and $CO_2$ performance ($Q_{CO2}$ in $ml{\cdot}hr^{-1}{\cdot}atm^{-1}{\cdot}m^{-2}$) of low density polyethylene (LDPE) film samples were measured at $0^{\circ}C$ and described as function of thickness (L in ${\mu}m$) as $Q_{O2}=(2540{\times}1/L)-16$, and $Q_{CO2}=(13742{\times}1/L)-70$, respectively. MA package containing single persimmon fruit of 225g was designed and tested experimentally at $0^{\circ}C$ by using LDPE films. Package atmospheres predicted from the relationship of $O_2$, $CO_2$ and $N_2$ balances on the packages was in good agreement with those obtained experimentally. Physiology disorder occurrence was the lowest at 52 ${\mu}m$ package that attained optimum gas condition ($O_2$ 2.8% and $CO_2$ 5.4%). The computer simulation was found to be effective to help to design the optimum MA packaging condition of individual persimmon fruit.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.409-409
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• 2014

Recently hexagonal boron nitride (h-BN), III-V compound of boron and nitrogen with strong covalent $sp^2$ bond, is a 2 dimensional insulating material with a large direct band gap up to 6 eV. Its outstanding properties such as strong mechanical strength, high thermal conductivity, and chemical stability have been reported to be similar or superior to graphene. Because of these excellent properties, h-BN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Ultra flat and charge impurity-free surface of h-BN is also an ideal substrate to maintain electrical properties of 2 dimensional materials such as graphene. To synthesize a single or a few layered h-BN, chemical vapor deposition method (CVD) has been widely used by using an ammonia borane as a precursor. Ammonia borane decomposes into hydrogen (gas), monomeric aminoborane (solid), and borazine (gas) that is used for growing h-BN layer. However, very active monomeric aminoborane forms polymeric aminoborane nanoparticles that are white non-crystalline BN nanoparticles of 50~100 nm in diameter. The presence of these BN nanoparticles following the synthesis has been hampering the implementation of h-BN to various applications. Therefore, it is quite important to grow a clean and high quality h-BN layer free of BN particles without having to introduce complicated process steps. We have demonstrated a synthesis of a high quality h-BN monolayer free of BN nanoparticles in wafer-scale size of $7{\times}7cm^2$ by using CVD method incorporating a simple filter system. The measured results have shown that the filter can effectively remove BN nanoparticles by restricting them from reaching to Cu substrate. Layer thickness of about 0.48 nm measured by AFM, a Raman shift of $1,371{\sim}1,372cm^{-1}$ measured by micro Raman spectroscopy along with optical band gap of 6.06 eV estimated from UV-Vis Spectrophotometer confirm the formation of monolayer h-BN. Quantitative XPS analysis for the ratio of boron and nitrogen and CS-corrected HRTEM image of atomic resolution hexagonal lattices indicate a high quality stoichiometric h-BN. The method presented here provides a promising technique for the synthesis of high quality monolayer h-BN free of BN nanoparticles.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.268-273
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• 1998

Standard Zircaloy-4 sheets, charged with 230-250ppm hydrogen by the gas-charging method and homogenized at $400^{\circ}C$ for 72hrs in a vacuum, were corroded in pure water and aqueous LiOH solutions using static autoclaves at $350^{\circ}C$. Their corrosion behaviors were characterized by measuring their weight gains with the corrosion time and observing their microstructures using an optical microscope and a scanning electron microscope. The elemental depth profiles for hydrogen and lithium were measured using a secondary ion mass spectrometry(S1MS) to confirm their distributions at the oxidelmetal interface. The normal Zircaloy-4 specimens corroded abruptly and heavily at the concentration of Li ions more than 30ppm in the aqueous solution. This is due to accelerations by the rapid oxidation of many Zr- hydrides formed by the large amount of absorbed hydrogen, resulting from the increased substitution of $Li^{+}$ ions with $Zr^{4+}$-sites in the oxide as the Li ion concentration increased. The specimens that had been charged with amounts of hydrogen greater than its solubility corroded early with a more rapid acceleration than normal specimens, regardless of the corrosion solutions. At longer corrosion times. however, normal specimens showed a rather accelerated corrosion rate compared to the hydrogen-charged specimens. These slower corrosion rates of the hydrogen-charged specimens at the longer corrosion times would be due to the pre-existent Zr-hydride in the matrix, which causes the hydrogen pick- up into the specimen to be depressed, when the oxide with an appropriate thickness formed.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.305-311
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• 2001

$PbO-B_2O_3-SiO_2-Al_2O_3$, system was investigated for optical, thermal and electrical properties of transparent dielectric. We also studied the reaction between transparent dielectric and transparent electrode(Indium Tin Oxide, ITO) during firing. For the evaluation of properties, dielectrics were prepared under the conditions fired at 520~58$0^{\circ}C$ with 12$\mu\textrm{m}$ thickness. In the reaction between dielectrics and electrode(ITO), In ions diffused into dielectric layer, while Sn ion diffusion was not observed. The coefficient of thermal expansion, the dielectric constant, the glass transition temperature and the transmittance of the dielectric were greatly dependent on PbO content. The increase of the coefficient of thermal expansion and the dielectric constant were monitored by increasing PbO, while the glass transition temperature and the transmittance were decreased. With the increased $Al_2O_3/B_2O_3$ ratio, the coefficient of thermal expansion and the transmittance were decreased, while the dielectric constant was increased. The glass transition temperature did not change significantly.

• Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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• 2006.06b
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• pp.231-237
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• 2006

Grease barrier food containers are commonly used for packaging of fast food, cooked food, and food in general. Greaseproofing is also used for certificate paper and label paper etc. Different pulp raw materials, due to their different fiber morphology and chemical compositions, produce papers of varying characteristics. We used optical photomicroscopy and fiber analysis data to evaluate fiber morphology and traits under various beating conditions in order to understand which pulp raw materials produced superior greaseproofing property when a fluorinated greaseproofing agent was added internally. The experiment studied 9 species of pulps, including 2 softwood (northern pine and radiata pine) bleached kraft pulps which were beaten to 550 and 350 mL CSF, respectively; 3 hardwoods (eucalypts, acacia, mixed Indonesian hardwoods) bleached kraft pulps which were beaten to 450 and 250 mL CSF, respectively; and nonwood fibers of reed, bagasse, and abaca. A fluorinated greaseproofing chemical at 0.12% dosage with respect to dry pulp was added to each pulp preparation and formed handsheets. A total of 67 sets of handsheets were prepared, and their basis weights, thickness, bulks, opacities, wet opacities, air resistance, water absorption and degrees of greaseproofing were measured for an overall evaluation of pulp and freeness on greaseproofing papers. The experimental fiber length, coarseness and distribution characteristics and the greaseproofing results suggest that softwood pulps (radiate pine > northern pine) were superior to hardwood pulps (eucalypts > acacia > mixed Indonesian hardwoods). The unbeaten pulps gave papers with high porosities and nearly devoid of greaseproofing property. Greaseproofing is proportional to air resistance. Among the nonwood fibers, bagasse had the best greaseproofing property, followed by reed and abaca was the poorest. With regards to waterproofing property, hardwood pulps (mixed Indonesian hardwoods > acacia > eucalypts) were better than softwood pulps (northern pine > radiate pine). Among the Nonwood fibers, reed had the highest waterproofing property, and it was followed by abaca, while bagasse had the poorest waterproofing characteristic. In summary, bleached kraft northern pine, eucalypts and reed pulps were best suited for making greaseproofing papers, Freeness of the pulps should be kept at $200{\sim}280mL$ CSF for optimal performance.

• Journal of the Korean Wood Science and Technology
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• v.37 no.1
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• pp.37-47
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• 2009

For the inspection of wood, machine vision is the most common automated inspection method used at present. It is required to sort wood products by grade and to locate surface defects prior to cut-up. Many different sensing methods have been applied to inspection of wood including optical, ultrasonic, X-ray sensing in the wood industry. Nowadays the scanning system mainly employs CCD line-scan camera to meet the needs of accurate detection of lumber defects and real-time image processing. But this system needs exact feeding system and low deviation of lumber thickness. In this study low cost CCD area sensor was used for the development of image processing system for lumber being fed. When domestic red pine being fed on the conveyer belt, lumber images of irregular term of captured area were acquired because belt conveyor slipped between belt and roller. To overcome incorrect image merging by the unstable feeding speed of belt conveyor, it was applied template matching algorithm which was a measure of the similarity between the pattern of current image and the next one. Feeding the lumber over 13.8 m/min, general area sensor generates unreadable image pattern by the motion blur. The red channel of RGB filter showed a good performance for removing background of the green conveyor belt from merged image. Threshold value reduction method that was a image-based thresholding algorithm performed well for knot detection.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• Korean Journal of Optics and Photonics
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• v.18 no.1
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• pp.1-7
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• 2007

Filter colorimeters have a set of spectral bands for which spectral responsivity is the same as the color matching function defined by CIE (Commission Internationale de I'Eclairage). We have designed a set of color matching function filters denoted by $\bar{x}-filter,\;\bar{y}-filter,\;and\;\bar{z}-filter$. Because the $\bar{x}-function$ has two transmission bands, two $\bar{x}-filters$ are designed to cover the $\bar{x}-function$. To design the filters, we developed a nonlinear least square fit program which determines the thickness of the color glasses by minimizing its spectral mismatch value ($f{_1}'$) to below 3 %. The design has been validated by fabrication of the $\bar{y}-bar$ filter, of which $f{_1}'$ was measured to be 2.8 %. Considering a LCD flat panel display as a device under test, we have calculated the systematic error of the colorimetric measurement using the designed filters.