• Title/Summary/Keyword: Optical Rectification

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Relief displacement analysis of high-resoltion optical satellite images about mountain area (산악지역의 고해상도 광학위성영상자료 기복변위 분석)

  • 이성순;지광훈
    • Proceedings of the Korean Society of Surveying, Geodesy, Photogrammetry, and Cartography Conference
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    • 2004.04a
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    • pp.299-302
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    • 2004
  • 최근에 상용화되어 있는 영상 중 가장 고해상도인 ikonos 영상은 공간해상도가 높기 때문에 더 많은 지형지물 정보를 포함하고 있다. 그러나 이러한 커다란 장점과 더불어 고층건물이나 높은 표고의 지형에서 발생하는 기복변위 보정이라는 소축척 영상에서 볼 수 없었던 새로운 문제가 등장하였다. 특히, 이러한 고해상도 영상들은 산악지역에서 식생에 대한 세밀한 정보를 제공하지만 상대적으로 높은 고도를 가지고 있기 때문에 발생하는 기복왜곡과 그림자 효과가 자료의 이용에 제한요인으로 작용하게 된다. 본 연구에서는 ikonos 고유의 센서정보와 수치지형도를 통하여 획득한 DEM(수치표고모델)을 이용하여 정밀편위보정방법(Difference rectification method) 방법에 의해 기하보정을 수행하고 그 결과 발생하는 산악지역에서는 기복변위를 분석하였다.

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Nanoscale NiO for transparent solid state devices

  • Patel, Malkeshkumar;Kim, Joondong;Park, Hyeong-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.243.2-243.2
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    • 2015
  • We report a high-performing nanoscale NiO thin film grown by thermal oxidation of sputtered Ni film. The structural, physical, optical and electrical properties of nanoscale NiO were comprehensively investigated. A quality transparent heterojunction (NiO/ZnO) was formed by large-area applicable sputtering deposition method that has an extremely low saturation current of 0.1 nA. Considerable large rectification ratio of more than 1000 was obtained for transparent heterojunction device. Mott-Schottky analyses were applied to develop the interface of NiO and ZnO by establishing energy diagrams. Nanoscale NiO has the accepter carrier concentration of the order of 1018 cm-3. Nanoscale NiO Schottky junction device properties were comprehensively studied using room temperature impedance spectroscopy.

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Graphite상의 ZnO Nanorod성장과 그를 이용한 Schottky Diode 제작

  • Nam, Gwang-Hui;Baek, Seong-Ho;Park, Il-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.421.2-421.2
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    • 2014
  • We report on the growth of ZnO nanorods (NRs) grown on graphite and silicon substrates via an all-solution process and characteristics of their heterojunctions. Structural investigations indicated that morphological and crystalline properties were not significantly different for the ZnO NRs on both substrates. However, optical properties from photoluminescence spectra showed that the ZnO NRs on graphite substrate contained more point defects than that on Si substrate. The ZnO NRs on both substrates showed typical rectification properties exhibiting successful diode formation. The heterojunction between the ZnO NRs and the graphite substrate showed a Schottky diode characteristic and photoresponse under ultraviolet illumination at a small reverse bias of -0.1 V. The results showed that the graphite substrate could be a good candidate for a Schottky contact electrode as well as a conducting substrate for electronic and optoelectronic applications of ZnO NRs.

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Implementation of Image Rectification System with Thermal Imaging Cameras And Optical Camera (열화상 카메라와 광학카메라를 이용한 영상 조정 시스템 구현)

  • Lim, Su-Chang;Kim, Do-Yeon
    • Proceedings of the Korea Information Processing Society Conference
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    • 2015.10a
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    • pp.1424-1427
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    • 2015
  • 본 논문에서는 일반적인 동일 기종의 카메라를 사용한 스테레오 카메라 시스템이 아닌, 서로 다른 화각 및 해상도를 가진 이기종 카메라를 이용하여 스테레오 카메라를 설계한다. 본 논문에서 설계하는 스테레오 카메라는 카메라의 수평오차 및 화각, 해상도가 다르다. 따라서 해당 스테레오 카메라를 통해 송출되는 1:1 매칭 되지 않는 영상을 본 논문에서 제시한 코너점 좌표와 기하학변환 방법으로 교정하고 매칭되는 영역을 잘라내는 조정의 과정을 제안한다. 해당 교정 및 조정에는 컴퓨터 비전 라이브러리인 OpenCV를 이용하고 사용자에게 볼 수 있는 프로그램을 MFC를 이용하여 제작한다. 해당 시스템을 통해 교정 및 조정된 영상은 최소한의 픽셀 오차율을 보여 동일한 영역의 감시활동에 효과적임을 보여준다.

Photoresponse Properties of Reduced Graphene Oxide/n-silicon Heterojunction Fabricated by the Vacuum Filtration and Transfer Method

  • Du, Yonggang;Qiao, Liangxin;Xue, Dingyuan;Jia, Yulei
    • Current Optics and Photonics
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    • v.6 no.4
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    • pp.367-374
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    • 2022
  • A photodetector based on a reduced graphene oxide (RGO)/n-Si heterojunction with high responsivity, detectivity and fast response speed is presented. Here, we put forward a simple vacuum filtration method to prepare RGO film and transfer it onto an n-Si substrate to form an RGO/n-Si heterojunction. The experimental results show that the heterojunction has good rectification characteristics, and the response and recovery time are less than 0.31 s and 0.25 s, respectively. Under 470 nm light conditions at -2 V applied voltage, the responsivity and detectivity of the device are 65 mA/W and 4.02 × 1010 cmHz1/2W-1, respectively. The simple preparation process and good performance of the RGO/n-Si heterojunction make it a promising material for photoelectric detection, especially in the near-ultraviolet band.

Optical Character Recognition for Hindi Language Using a Neural-network Approach

  • Yadav, Divakar;Sanchez-Cuadrado, Sonia;Morato, Jorge
    • Journal of Information Processing Systems
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    • v.9 no.1
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    • pp.117-140
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    • 2013
  • Hindi is the most widely spoken language in India, with more than 300 million speakers. As there is no separation between the characters of texts written in Hindi as there is in English, the Optical Character Recognition (OCR) systems developed for the Hindi language carry a very poor recognition rate. In this paper we propose an OCR for printed Hindi text in Devanagari script, using Artificial Neural Network (ANN), which improves its efficiency. One of the major reasons for the poor recognition rate is error in character segmentation. The presence of touching characters in the scanned documents further complicates the segmentation process, creating a major problem when designing an effective character segmentation technique. Preprocessing, character segmentation, feature extraction, and finally, classification and recognition are the major steps which are followed by a general OCR. The preprocessing tasks considered in the paper are conversion of gray scaled images to binary images, image rectification, and segmentation of the document's textual contents into paragraphs, lines, words, and then at the level of basic symbols. The basic symbols, obtained as the fundamental unit from the segmentation process, are recognized by the neural classifier. In this work, three feature extraction techniques-: histogram of projection based on mean distance, histogram of projection based on pixel value, and vertical zero crossing, have been used to improve the rate of recognition. These feature extraction techniques are powerful enough to extract features of even distorted characters/symbols. For development of the neural classifier, a back-propagation neural network with two hidden layers is used. The classifier is trained and tested for printed Hindi texts. A performance of approximately 90% correct recognition rate is achieved.

Individual Ortho-rectification of Coast Guard Aerial Images for Oil Spill Monitoring (유출유 모니터링을 위한 해경 항공 영상의 개별정사보정)

  • Oh, Youngon;Bui, An Ngoc;Choi, Kyoungah;Lee, Impyeong
    • Korean Journal of Remote Sensing
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    • v.38 no.6_1
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    • pp.1479-1488
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    • 2022
  • Accidents in which oil spills occur intermittently in the ocean due to ship collisions and sinkings. In order to prepare prompt countermeasures when such an accident occurs, it is necessary to accurately identify the current status of spilled oil. To this end, the Coast Guard patrols the target area with a fixed-wing airplane or helicopter and checks it with the naked eye or video, but it was difficult to determine the area contaminated by the spilled oil and its exact location on the map. Accordingly, this study develops a technology for direct ortho-rectification by automatically geo-referencing aerial images collected by the Coast Guard without individual ground reference points to identify the current status of spilled oil. First, meta information required for georeferencing is extracted from a visualized screen of sensor information such as video by optical character recognition (OCR). Based on the extracted information, the external orientation parameters of the image are determined. Images are individually orthorectified using the determined the external orientation parameters. The accuracy of individual orthoimages generated through this method was evaluated to be about tens of meters up to 100 m. The accuracy level was reasonably acceptable considering the inherent errors of the position and attitude sensors, the inaccuracies in the internal orientation parameters such as camera focal length, without using no ground control points. It is judged to be an appropriate level for identifying the current status of spilled oil contaminated areas in the sea. In the future, if real-time transmission of images captured during flight becomes possible, individual orthoimages can be generated in real time through the proposed individual orthorectification technology. Based on this, it can be effectively used to quickly identify the current status of spilled oil contamination and establish countermeasures.

SnS2/p-Si Heterojunction Photodetector (SnS2/p-Si 이종접합 광 검출기)

  • Oh, Chang-Gyun;Cha, Yun-Mi;Lee, Gyeong-Nam;Jung, Bok-Mahn;Kim, Joondong
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.67 no.10
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    • pp.1370-1374
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    • 2018
  • A heterojunction $SnS_2/p-Si$ photodetector was fabricated by RF magnetron sputtering system. $SnS_2$ was formed with 2-inch $SnS_2$ target. Al was applied as the front and the back metal contacts. Rapid thermal process was conducted at $500^{\circ}C$ to enhance the contact quality. 2D material such as $SnS_2$, MoS2 is very attractive in various fields such as field effect transistors (FET), photovoltaic fields such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors, especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment. Especially, $SnS_2$ has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material. The large bandgap of $SnS_2$ offers the advantage for the large on-off current ratio and low leakage current. The $SnS_2/p-Si$ photodetector clearly shows the current rectification when the thickness of $SnS_2$ is 80 nm compared to when it is 135 nm. The highest photocurrent is $19.73{\mu}A$ at the wavelength of 740 nm with $SnS_2$ thickness of 80 nm. The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer.

A Prototype Architecture of an Interactive Service System for Digital Hologram Videos (디지털 홀로그램 비디오를 위한 인터랙티브 서비스 시스템의 프로토타입 설계)

  • Seo, Young-Ho;Lee, Yoon-Hyuk;Yoo, Ji-Sang;Kim, Man-Bae;Choi, Hyun-Jun;Kim, Dong-Wook
    • Journal of Broadcast Engineering
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    • v.17 no.4
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    • pp.695-706
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    • 2012
  • The purpose of this paper is to propose a service system for a digital hologram video, which has not been published yet. This system assumes the existing service frame for 2-dimensional or 3-dimensional image/video, which includes data acquisition, processing, transmission, reception, and reconstruction. This system also includes the function to service the digital hologram at the viewer's view point by tracking the viewer's face. For this function, the image information at the virtual view point corresponding to the viewer's view point is generated to get the corresponding hologram. Here in this paper, only a prototype that includes major functions of it is implemented, which includes camera system for data acquisition, camera calibration and image rectification, depth/intensity image enhancement, intermediate view generation, digital hologram generation, and holographic image reconstruction by both simulation and optical apparatus. The proposed prototype system was implemented and the result showed that it takes about 352ms to generate one frame of digital hologram and reconstruct the image by simulation, or 183ms to reconstruct image by optical apparatus instead of simulation.

테라헤르츠 펄스 기술

  • Han, Hae-Ok;Yu, Nan-Lee;Jeon, Tae-In;Jin, Yun-Sik;Park, Ik-Mo;Kim, Jeong-Hoe;Mun, Gi-Won;Han, Yeon-Ho;Jeong, Eun-A;Gang, Cheol;Lee, Yeong-Rak;Go, Do-Gyeong;Lee, Ui-Su;Ji, Young-Bin;Kim, Geun-Ju;Han, Gyeong-Ho
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.5
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    • pp.87-103
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    • 2008
  • In recent years, the field of THz photonics based on THz pulse technology has gained tremendous, world-wide interest as a new exciting research subject. With a possibility of many commercial applications as well as fundamental scientific achievements in the field, many advanced nations are stepping up their effort in advancing the field of THz photonics. This fact is supported by the observation of the significant increase in the number of papers on THz pulse technology presented in renowned international journals and conferences. The subject that is interesting for the THz application is the development of THz pulse sources and detectors, and other passive devices. In this paper, we present a brief review on some of the key devices and their relavant measurement techniques such as THz photoconductive antennas, optical rectification, difference frequency geneneration with quasi-phase matching structures, electro-optic sampling, high speed real time measurements, THz transmission lines, and other various waveguide structures.