• Journal of the Korean Vacuum Society
• /
• v.19 no.4
• /
• pp.275-280
• /
• 2010

The influence of $O_2$-plasma treatment on $H_2$ post-treated BZO (ZnO:B) thin film using MOCVD (Metal-Organic Chemical Vapor Deposition) are investigated. An $O_2$-plasma treatment of the $H_2$ post-treated BZO thin films resulted in XRD peak of (100), (101) and (110). Also, electrical properties resulted in an increase in sheet resistance and work function. The weighted optical transmittance and haze at 300~1,100 nm of BZO thin films with $O_2$-plasma treatment on the $H_2$ post-treatment show approximately 86% and 15%, respectively.

• Journal of the Korean Vacuum Society
• /
• v.19 no.3
• /
• pp.217-223
• /
• 2010

We grew multi-stacked InAs/$In_{0.1}Ga_{0.9}As$ DWELL (dot-in-a-well) structure by metal organic chemical vapor deposition and investigated optical properties by photoluminescence and I-V characteristics by dark current measurement. When stacking InAs quantum dots (QDs) with same growth parameter, the size and density of QDs were changed, resulting in the bimodal emission peak. By decreasing the flow rate of TMIn, we achieved the uniform multi-stacked QD structure which had the single emission peak and high PL intensity. As the growth temperature of n-type GaAs top contact layer (TCL) is above $600^{\circ}C$, the PL intensity severely decreased and dark current level increased. At bias of 0.5 V, the activation energy for temperature dependence of dark current decreased from 106 meV to 48 meV with increasing the growth temperature of n-type GaAs TCL from 580 to $650^{\circ}C$. This suggest that the thermal escape of bounded electrons and non-radiative transition become dominant due to the thermal inter-diffusion at the interface between InAs QDs and $In_{0.1}Ga_{0.9}As$ well layer.

• Korean Journal of Materials Research
• /
• v.8 no.8
• /
• pp.693-698
• /
• 1998

The effects of $AI_{2}$$O_{3}$ and the ratio of $Na_2O/B_2O_3$ on the phase separation and optical properties of sodium borosilicate glass film fabricated by AFD(Aerosol Flame Deposition) were investigated. When AI,O, of 6wt% was added to $66SiO_2-27B_2O_3-7Na_2O$ the clear glass film without any crystallization was produced under air-quenching condition after consolidation. As the amount of $AI_{2}$$O_{3}$ increased from 1.5 to 6.0 wt% the refractive index linearly increased from 1.4610 to 1.4701, and the difference of TE and TM mode causing by residual stress in film increased gradually. However, the difference of TE and TM mode to reveal birefringence could be minimized by annealing below the glass transition temperature after consolidation and air quenching. On the other hand. as the ratio of $Na_2O/B_2O_3$ increased the refractive index and birefringence of glass film tended to increase, but the measurement of their values were not available at over the critical ratio of $Na_2O/B_2O_3$, because of the cloudiness due to crystallization. The phase separation was greatly accelerated with increasing the ratio of $Na_2O/B_2O_3$.

• Korean Journal of Materials Research
• /
• v.11 no.3
• /
• pp.178-184
• /
• 2001

Transparent and highly oriented KLN thin films have been grown by an rf- magnetron sputtering deposition method. A homogeneous and stable KLN target was prepared by calcine and sintering process. For KLN target, stoichiometry and composition excess with K of 30% and 60%, and Li of 15% and 30% respectively, was prepared. The targets were sintered at low temperature to prevent vaporization of K and Li. KLN thin films were fabricated by rf-magnetron sputtering method using those targets. In this experiment, using the target of composition excessed with K of 60% and Li of 30%, single phase KLN thin film was produced. KLN thin film has excellent crystallinity and highly c-axis oriented on Corning 1737 substrate. Transmittance of thin film in visible range was 90%, absorption edge is 333 nm and refractive index at 632.8 nm was 1.93.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.40 no.12
• /
• pp.1047-1053
• /
• 2016

In this study, welding of pure titanium was carried out by using a continuous wave fiber laser with a maximum output of 6.3 kW. Because brittle regions form easily in titanium as a result of oxidation or nitriding, the weld must be protected from the atmosphere by using an appropriate shielding gas. Experiments were performed by changing the type and the flow rate of shielding gases to obtain the optimal shielding condition, and the weldability was then evaluated. The degree of oxidation and nitriding was distinguished by observing the color of beads, and weld microstructure was observed by using an optical microscope and a scanning electron microscope. The mechanical properties of the weld were examined by measuring hardness. When the weld was oxidized or nitrified, the bead color was gray or yellow, and the oxygen or nitrogen content in the bead surface and overall weld tended to be high, as a result of which the hardness of the weld was thrice that of the base metal. A sound silvery white bead was obtained by using Ar as the shielding gas.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• v.9 no.1
• /
• pp.1022-1025
• /
• 2005

The effect of substrate surface to the formation of ZnO nanostructures has been investigated using Si (111), $Al_2O_3$(C-plane) $Al_2O_3$(A-plane), and $Al_2O_3$(R-plane) substrates. The growth temperature was controlled from 500$^{\circ}C$ ${\sim}$ 600$^{\circ}C$, and the luminescence properties were investigated by a series of photoluminescence (PL) measurements at the elevating temperatures. ZnO nanostructures grown on Si substrate show strong UV emission intensity along with green emission positioned at 3.22 eV and 2.5 eV, respectively. However, green emission was not observed from the ZnO nanostructures grown on $Al_2O_3$ substrates. It is explained in terms of the difference of the surface energy between Si and $Al_2O_3$. Also, the origin of UV emissions has been discussed by using the temperature-dependent PL. The distinction of the PL spectra is interpreted in terms of the difference of the impurity included in the nanostructures.

• Journal of Sensor Science and Technology
• /
• v.24 no.6
• /
• pp.404-411
• /
• 2015

A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.

• Journal of Korean Society of Environmental Engineers
• /
• v.32 no.10
• /
• pp.957-964
• /
• 2010

The deactivated catalyzed diesel particulate filter-trap (DPF) was remanufactured by ultrasonic wave treatment with various prepared solutions, followed by active component re-impregnation, and the emission control performance and surface properties of remanufactured DPF were studied at various remanufacturing conditions. The proper ultrasonic wave cleaning time at various prepared solutions and optimal re-impregnation amounts of active component for the best emission control performance of DPF were investigated and its performance tests were also carried out with various temperatures for the conversions of CO, THC (total hydrocarbon) and PM (particulate matter) by catalytic reaction test unit using bypass gas from the diesel engine dynamo system. It was found that the emission control performance of DPF remanufactured with the high-temperature air washing, ultrasonic wave cleaning at acid/base solutions and active component re-impregnation method was recovered to 95% level of its activity compared to that of the fresh DPF, which was caused by removing the deactivating materials from the surface of the DPF, through the analyses of performance test and their surface characterization by Optical microscope, EDX, ICP, TGA, and porosimeter.

• Applied Biological Chemistry
• /
• v.26 no.2
• /
• pp.137-142
• /
• 1983

Starch granules of sweet potatoes, the Suwon 147 and the Chunmi were observed by photomicroscope and scanning electron microscope were round and polygonal. Granule sizes of the Suwon 147 and the Chunmi were $14{\sim}30{\mu}m,\;16{\sim}34{\mu}m$, respectively. X-ray diffraction pattern of starch granules resulted weak crystallinity at $2{\theta}$ 14.8, 17.2, 22.5. Starch granules were of the Ca crystalline type. The blue values of the Suwon 147 and the Chunmi were determined to be 0.342 and 0.279, amylose contents 27.6% and 23.6%, and water binding capacity 178.7% and 185.5%. Swelling of the starches negligible until $50^{\circ}C$ thereafter it increased rapidly. Swelling power of the Suwon 147 was more slightly than that of the Chunmi. Optical transmittance of 0.2% starch suspensions was increased rapidly from $65^{\circ}C$ and the gelatinization at $65{\sim}80^{\circ}C$ was of sing1e stage. Amylogram patterns of 4% starch solutions were similar to no peak viscosity. Viscosity of the Suwon 147 was increased, but that of the Chunmi was decreased at $92.5^{\circ}C$.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.10 no.6
• /
• pp.487-495
• /
• 2017

The thermal characteristics of the electrodeless lamp are one of the main factors that determine the design and performance of the lamp. The coupler changes the impedance characteristic by heat and its use temperature is usually within about $150^{\circ}C$. In this study, we observed the phenomenon when the coupler was exposed at a temperature of $150^{\circ}C$ or higher, which has not been discussed so far. Two types of coupler A and coupler B with different spacing between the inner tube and the coupler were analyzed for electrical, thermal and optical properties and deterioration characteristics with different heat and heat shielding conditions. First, the impedance of the system is obtained and used as a criterion for analyzing the electrical characteristics through it. The diameters of the two types of couplers are 1 mm, and the experimental result shows that the coupler diameter is 1 mm, which can cancel out the loss of the magnetic field strength. Therefore, based on these results, when the coupler is exposed to high temperature of about $200^{\circ}C$, the efficient design method corresponding thereto is proposed.