• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.9
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• pp.15-22
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• 2000

The effects of carrier transport and input power on the extinction ratio was theoretically analyzed in a 1.55${\mu}m$ InGaAsP/InGaAsP multiple-quantum-well(MQW) electroabsorption(EA) modulator. Poisson's equation, current continuity equations for electrons and holes, and optical field distribution were self-consistently solved by considering electric field dependent absorption coefficients. The field screening effect due to the carrier accumulation in heterointerface and the space-charge region occurred more seriously at the input side of modulator as input optical intensity increased. It was revealed that extinction ratio could be steeply degraded for modulator with the length of 200${\mu}m$ when an input power exceeds 10mW. A degradation of extinction ratio due to the field screening effect would be more significantly at high-performance devices such as a 1.55${\mu}m$DFB-LD/EA-modulator integrated source where optical coupling efficiency is almost complete or a very high-speed modulator with its length as short as a few tens ${\mu}m$.

• Korean Journal of Optics and Photonics
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• v.11 no.4
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• pp.271-278
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• 2000

We have fabricated and analyzed the lasing characteristics of 1.3$\mu\textrm{m}$ Spot-Size-Converter (SSC) integrated Fabry-Perot (FP) laser diodes, which are very promising light sources for optical subscriber networks. SSC-LDs has been developed by BIB (buttjoint-built-in) coupling and selective MOVPE growth. High-performances were achieved such as the slope efficiency from the SSC facet of 0.23-0.32 mW/mA, the full-width at the half maximum of the far-field pattern (FFP) of 9.5$^{\circ}$~12.3$^{\circ}$, the alignment tolerances of $\pm$2.3$\mu\textrm{m}$ and $\pm$2.5$\mu\textrm{m}$ within the extra-coupling loss of 1 dB for the vertical and parallel directions, respectively. These experimental results were compared to theoretical ones in order to clarify the operational problems and give a good design direction of the fabricated SSC-LDs. It was revealed that an asymmetric output power from the facets, an irrelevancy of FFP and the waveguide structure around SSC facet region, and a poor temperature characteristics were originated from the scattering in the BIB and SSC sections and SHB effect in the active section for the first time.t time.

• Journal of Biomedical Engineering Research
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• v.31 no.4
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• pp.292-301
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• 2010

To restore visual sensation of blind patients, we have proposed a fully implantable retinal prosthesis comprising an three dimensionally (3D) stacked retinal chip for transforming optical signal to electrical signal, a flexible cable with stimulus electrode array for stimulating retina cells, and coupling coils for power transmission. The 3D stacked retinal chip is consisted of several LSI chips such as photodetector, signal processing circuit, and stimulus current generator. They are vertically stacked and electrically connected using 3D integration technology. Our retinal prosthesis has a small size and lightweight with high resolution, therefore it could increase the patients` quality of life (QOL). For realizing the fully implantable retinal prosthesis, we developed a retinal prosthesis module comprising a retinal prosthesis chip and a flexible cable with stimulus electrode array for generating optimal stimulus current. In this study, we used a 2D retinal chip as a prototype retinal prosthesis chip. We fabricated the polymide-based flexible cable of $20{\mu}m$ thickness where 16 channels Pt stimulus electrode array was formed in the cable. Pt electrode has an impedance of $9.9k{\Omega}$ at 400Hz frequency. The retinal prosthesis chip was mounted on the flexible cable by an epoxy and electrically connected by Au wire. The retinal prosthesis chip was cappted by a silicone to pretect from corrosive environments in an eyeball. Then, the fabricated retinal prosthesis module was implanted into an eyeball of a rabbit. We successfully recorded electrically evoked potential (EEP) elicited from the rabbit brain by the current stimulation supplied from the implanted retinal prosthesis module. EEP amplitude was increased linearly with illumination intensity and irradiation time of incident light. The retinal prosthesis chip was well functioned after implanting into the eyeball of the rabbit.

• Korean Journal of Optics and Photonics
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• v.18 no.6
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• pp.441-446
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• 2007

Outcoupling efficiency of the OLED device is improved by incorporating both a microlens array and a diffractive grating pattern. The microlens array improves the light transmission at the interface of glass and air, and the diffractive grating outcouples the guided mode propagating at the waveguide, which consists of ITO and organic layers. By using the PDMS soft mold imprinting method, the microlens array is fabricated on the glass substrate. The diffractive grating pattern is directly fabricated on the ITO surface by using laser interferometry. A microlens array with a diameter of $10{\mu}m$ improves the light coupling efficiency by 22%. The diffractive grating made of TSMR photoresist enhances the luminance power efficiency by 41% at a current density of $20mA/cm^2$.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.7 no.1
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• pp.20-25
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• 2014

There are several severe problems for LED device, the next generation's economy green lighting: as the temperature increases, the lamp efficiency decreases; if the temperature is over $80^{\circ}C$, the lifetime of lighting decreases; Red Shift phenomenon that wavelength of spectrum line moves toward long wavelength occurs; and optical power decreases as $T_j$ increases. Thus, Heat sink design that can minimize the heat of LED device is currently in progress. While the thermal resistance of COB Type LED was reduced by direct coupling of LED chip to the board, residential 13.5W requires Heat sink in order resolve heat issue. This study designed Heat Sink suitable for residential 13.5W COB LED down-light and selected the optimum Fin thickness through flow simulation that packaged the designed Heat Sink and 13.5W COB. And finally it analyzed and evaluated the thermal modes using contacting thermometer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.9
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• pp.535-540
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• 2017

The changes in the electrical characteristics of CMOS ICs due to coupling with a narrow-band electromagnetic wave were analyzed in this study. A magnetron (3 kW, 2.45 GHz) was used as the narrow-band electromagnetic source. The DUT was a CMOS logic IC and the gate output was in the ON state. The malfunction of the ICs was confirmed by monitoring the variation of the gate output voltage. It was observed that malfunction (self-reset) and destruction of the ICs occurred as the electric field increased. To confirm the variation of electrical characteristics of the ICs due to the narrow-band electromagnetic wave, the pin-to-pin resistances (Vcc-GND, Vcc-Input1, Input1-GND) and input capacitance of the ICs were measured. The pin-to-pin resistances and input capacitance of the ICs before exposure to the narrow-band electromagnetic waves were $8.57M{\Omega}$ (Vcc-GND), $14.14M{\Omega}$ (Vcc-Input1), $18.24M{\Omega}$ (Input1-GND), and 5 pF (input capacitance). The ICs exposed to narrow-band electromagnetic waves showed mostly similar values, but some error values were observed, such as $2.5{\Omega}$, $50M{\Omega}$, or 71 pF. This is attributed to the breakdown of the pn junction when latch-up in CMOS occurred. In order to confirm surface damage of the ICs, the epoxy molding compound was removed and then studied with an optical microscope. In general, there was severe deterioration in the PCB trace. It is considered that the current density of the trace increased due to the electromagnetic wave, resulting in the deterioration of the trace. The results of this study can be applied as basic data for the analysis of the effect of narrow-band high-power electromagnetic waves on ICs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.189-189
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• 2012

Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

• Korean Journal of Optics and Photonics
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• v.17 no.6
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• pp.556-563
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• 2006

We present a comprehensive study of a chirped pulse Ti:sapphire regenerative amplifier system operating at 1 kHz. Main constituents of the system are described in detail. The amplifier stage was first converted to a repetition rate-tunable kHz gain-switched nanosecond Ti:sapphire laser. Operation characteristics at different repetition rates such as build-up times of laser pulses, pump power-dependent output powers and pulse durations, damage thresholds, and tunability ranges were studied. Based on the results achieved, the switching time of the Pocket's cell used and the round trip numbers in the regenerative amplifier were optimized at 1 kHz. The output pulses with a pulse width of 50fs from a home-made Ken lens mode-locked Ti:sapphire oscillator were used as seed pulses. The pulses were expanded to 120ps in a grating stretcher prior to coupling into the 3-mirror amplifier cavity. After amplification and recompression, a stable 1kHz Ti:sapphire regenerative amplifier system, which delivers 85-fs, $320-{\mu}J$ pulses, was fully constructed.

• Korean Journal of Optics and Photonics
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• v.20 no.5
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• pp.266-271
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• 2009

We designed a thermo-optic switch based on a directional coupler with not only a high extinction ratio but also significantly low power consumption. The switch operates by using the thermo-optic effect of the polymer which the refractive index changes by heating the electrode. If the electrode is not powered (OFF), the input light will be coupled completely to the other waveguide. When the electrode is powered at a certain level (ON), input light launched into the input waveguide will remain in that waveguide due to the lower index adjusted in the other waveguide. The switch based on the directional coupler was designed using the generalized extinction ratio curve and the lateral shift of the input waveguide. The coupling length is 1,610 ${\mu}m$ and the extinction ratios are -28 and -30 dB for ON and OFF states, respectively. The electrode structures were optimized by thermal analysis. The transported heat into the waveguide is increased, as the electrode width (w) is increased and the center distance between the electrode and the waveguide (d) is decreased. Also, because the heat generated in the electrode affects the other waveguide, the temperature difference between two waveguides is varied as the given w and d. There are specific conditions which have the maximum of the temperature difference. That of the temperature difference is increased as the width and the temperature of the electrode are increased. Especially, when the switch is designed using the condition with the maximum of the temperature difference for switching, the temperature of the electrode can be decreased. We expect this condition will be the novel method for the reduction of the power consumption in a thermo-optic switch.