• Journal of Power Electronics
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• 제15권4호
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• pp.1018-1025
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• 2015

This paper proposes a methodological scheme for the photovoltaic (PV) simulator design. With the advantages of a digital controller system, linear interpolation is proposed for precise fitting with higher computational efficiency. A novel control strategy that directly tackles two different duty cycles is proposed and implemented to achieve a full-range operation including short circuit (SC) and open circuit (OC) conditions. Systematic design procedures for both hardware and algorithm are explained, and a prototype is built. Experimental results confirm an accurate steady state performance under different load conditions, including SC and OC. This low power apparatus can be adopted for PV education and research with a limited budget.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.158-161
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• 2006

Superstrate pin amorphous silicon thin-film (a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides (TCO) In order to see the effect of TCO/P-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage $V_{oc}$ than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer $({\mu}c-Si:H)$ between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{oc}$, of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{oc}$, of 994mv while keeping fill factor (72.7%) and short circuit current density $J_{sc}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{oc}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• Advances in aircraft and spacecraft science
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• 제2권3호
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• pp.275-302
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• 2015

Theoretical and numerical assessments of approximate evaluations and simplified analyses of piezoelectric structures transverse shear modal effective electromechanical coupling coefficient (EMCC) are presented. Therefore, the latter is first introduced theoretically and its approximate evaluations are reviewed; then, three-dimensional (3D) and simplified two-dimensional (2D) plane-strain (PStrain) and plane-stress (PStress) piezoelectric constitutive behaviors of electroded shear piezoceramic patches are derived and corresponding expected short-circuit (SC) and open-circuit (OC) frequencies and resulting EMCC are discussed; next, using a piezoceramic shear sandwich beam cantilever typical benchmark, a 3D finite element (FE) assessment of different evaluation techniques of the shear modal effective EMCC is conducted, including the equipotential (EP) constraints effect; finally, 2D PStrain and PStress FE modal analyses under SC and OC electric conditions, are conducted and corresponding results (SC/OC frequencies and resulting effective EMCC) are compared to 3D ones. It is found that: (i) physical EP constraints reduce drastically the shear modal effective EMCC; (ii) PStress and PStrain results depend strongly on the filling foam stiffness, rendering inadequate the use of popular equivalent single layer models for the transverse shear-mode sandwich configuration; (iii) in contrary to results of piezoelectric shunted damping and energy harvesting popular single-degree-of-freedom-based models, transverse shear modal effective EMCC values are very small in particular for the first mode which is the common target of these applications.

• Smart Structures and Systems
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• 제5권6호
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• pp.591-612
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• 2009

New insights are presented in simplified modeling and analysis of free vibrations of piezoelectric - based smart structures and systems. These consist, first, in extending the wide used piezoelectric-thermal analogy (TA) simplified modeling approach in currently static actuation to piezoelectric free-vibrations under short-circuit (SC) and approximate open-circuit (OC) electric conditions; second, the popular piezoelectric strain induced - potential (IP) simplified modeling concept is revisited. It is shown that the IP resulting frequencies are insensitive to the electric SC/OC conditions; in particular, SC frequencies are found to be the same as those resulting from the newly proposed OC TA. Two-dimensional plane strain (PStrain) and plane stress (PStress) free-vibrations problems are then analyzed for above used SC and approximate OC electric conditions. It is shown theoretically and validated numerically that, for both SC and OC electric conditions, PStress frequencies are lower than PStrain ones, and that 3D frequencies are bounded from below by the former and from above by the latter. The same holds for the modal electro-mechanical coupling coefficient that is retained as a comparator of presented models and analyses.

• 신재생에너지
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• 제2권3호
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• pp.31-36
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• 2006

Superstrate pin amorphous silicon thin-film(a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides(TCO) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage VOC than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer(${\mu}c-Si:H$) between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{OC}$ of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{OC}$ of 994mV while keeping fill factor(72.7%) and short circuit current density $J_{SC}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{OC}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• Journal of Power Electronics
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• 제16권5호
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• pp.1950-1963
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• 2016

A novel open-circuit fault diagnosis method for 3-phase 4-wire 3-level active power filters based on voltage error correlation is proposed in this paper. This method is based on observing the output pole voltage error of the active power filter through two kinds of algorithms. One algorithm is a voltage error analytical algorithm, which derives four output voltage error analytic expressions through the pulse state, current value and dc bus voltage, respectively, assuming that all of the IGBTs of a certain phase come to an OC fault. The other algorithm is a current circuit equation algorithm, which calculates the real-time output voltage error through basic circuit theory. A correlation is introduced to measure the similarity of the output voltage errors between the two algorithms, and OC faults are located by the maximum of the correlations. A FPGA has been chosen to implement the proposed method due to its fast prototyping. Simulation and experimental results are presented to show the performance of the proposed OC fault diagnosis method.

• 한국물환경학회지
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• 제28권6호
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• pp.917-922
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• 2012

In order to improve applicability of a microbial fuel cell the laboratory-scaled study has been performed by adopting an air-cathode MFC system with high concentrated anaerobic slugies in this study. The concentrations of microbes are grouped into three types, Type A (TS 1.7%), Type B (TS 1.1%) and Type C (TS 0.51%). The open circuit voltage $(V_{oc})$ characteristics showed that the medium microbes concentration of 1.10% (Type B) kept a constant voltage of 1.0 V for 150 hours, which showed the longest time among three types (Type A and Type C). The discharge charge curves for a closed circuit with $500 \Omega$ also showed that Type B generated a stable discharge voltage of 0.8 V for a longer time as in the open circuit voltage case. This could be explained by the relatively large amount of the attached microbes. Under the $V_{oc}$condition the COD removal efficiency of Type B was found to be low for a long time, but those of Type A and C were found to be high for a short period of time. Therefore, the suspended microbes could decrease the coulombic efficiency. It was concluded that the high $V_{oc}$ was caused by low COD and the $V_{oc}$ became low after the COD removal. The COD reduction resulted in an unstable and low working voltage. From the polarization characteristics Type A was found to show the highest power density of $193\;mW/m^2$ with a fill factor of 0.127 due to the relatively high remaining COD even after the MFC reaction.

• Journal of Power Electronics
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• 제18권2호
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• pp.627-639
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• 2018

The fact that the reliability of IGBTs has become a more and more significant aspect of power converters has resulted in an increase in the research on the open circuit (OC) fault location of IGBTs. When an OC fault occurs, a zero-current phenomena exists and frequently appears, which can be found in a lot of the existing literature. In fact, fault variables have a very high correlation with the zero-current interval. In some cases, zero-current interval actually decides the most significant fault feature. However, very few of the previous studies really explain or prove the zero-current phenomena of the fault current. In this paper, the zero-current phenomena is explained and verified through mathematical derivation, based on two-level and three-level NPC static var generators (SVGs). Mathematical models of single OC fault are deduced and it is concluded that a zero-current interval with a certain length follows the OC faults for both two-level and NPC three-level SVGs. Both inductive and capacitive reactive power situations are considered. The unbalanced load situation is discussed. In addition, simulation and experimental results are presented to verify the correctness of the theoretical analysis.

• Transactions on Electrical and Electronic Materials
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• 제17권3호
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• pp.134-138
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• 2016

The fullerene solar cells are becoming a feasible choice due to the advanced developments in donor materials and improved fabrication techniques of devices. Recently, sufficient optimization and improvements in the processing techniques like incorporation of solvent vapor annealing (SVA) with additives in solvents has become a major cause of prominent improvements in the performance of organic solar cell-based devices . On the other hand, the challenge of reduced open circuit voltage (V_oc) remains. This study presents an approach for significant performance improvement of overall device based on organic small molecular solar cells (SMSCs) by following a two step technique that comprises thermal annealing (TA) and SVA (abbreviated as SVA+TA). In case of exclusive use of SVA, reduction in V_oc can be eliminated in an effective way. The characteristics of charge carriers can be determined by the measurement of transient photo-voltage (TPV) and transient photo-current (TPC) that determines the scope for improvement in the performance of device by two step annealing. The recovery of reduced V_oc is linked with the necessary change in the dynamics of charge that lead to increased overall performance of device. Moreover, SVA and TA complement each other; therefore, two step annealing technique is an appropriate way to simultaneously improve the parameters such as V_oc, fill factor (FF), short circuit current density (J_sc) and PCE of small molecular solar cells.

• Current Optics and Photonics
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• 제3권6호
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• pp.516-521
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• 2019

The electrical leakage levels of GaN-based light-emitting diodes (LEDs) containing leakage paths are estimated using photoluminescence (PL) and photovoltaic properties under photoexcitation conditions. The PL intensity and open-circuit voltage (V_OC) decrease because of carrier leakages depending on photoexcitation conditions when compared with reference values for typical LED chips without leakage paths. Changes of photovoltage-photocurrent characteristics and PL intensity due to carrier leakage are employed to assess the leakage current levels of LEDs with leakage paths. The current corresponding to the reduced V_OC of an LED with leakage from the photovoltaic curve of a reference LED without leakage is matched with the leakage current calculated using the PL intensity reduction ratio and short-circuit current of the LED with leakage. The current needed to increase the voltage for an LED with a leakage under photoexcitation from V_OC of the LED up to V_OC of a reference LED without a leakage is identical to the additional current needed for optical turn-on of the LED with a leakage. The leakage current level estimated using the PL and photovoltaic properties under photoexcitation is consistent with the leakage level measured from the voltage-current characteristic obtained under current injection conditions.