• 한국태양에너지학회:학술대회논문집
• /
• 2009.11a
• /
• pp.383-387
• /
• 2009

Multi-crystalline silicon surface etching without grain-boundary delineation is a challenging task for the fabrication of high efficiency solar cell. The use of sodium hydroxide - sodium hypochlorite (NaOH40% + NaOCl 12%) solution for texturing multi-crystalline silicon wafer surface in solar cell fabrication line is reported in this article. in light current-voltage results, the cells etched in NaOH 40% + NaOCl 12% = 1:2 exhibited higher short circuit current and open circuit voltage than those of the cells etched in NaOH 40% + NaOCl 12% = 1:1 solution. we have obtained 15.19% conversion efficiency in large area(156cm2) multi-Si solar cells etched in NaOH 40% + NaOCl 12% = 1:1 solution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.34 no.2
• /
• pp.90-98
• /
• 2021

Piezoelectric ceramic fiber composite (PCFC) was fabricated using a planar electrode printed piezoelectric ceramic fiber driven in transverse mode for small-scale wind energy harvester applications. The PCFC consisted of an epoxy matrix material and piezoelectric ceramic fibers sandwiched by interdigitated electrode (IDE) patterned polyimide films. The PCFC showed an excellent mechanical performance under a continuous stress. For the fabrication of PCB cantilever harvester, five -PCFCs were vertically attached onto a flexible printed circuit board (PCB) substrate, and then PCFCs were serially connected through a printed Cu circuit. The energy harvesting performance was evaluated applying an inverted structure, which imples its free leading edge located at an open end but the trailing edge at a clamped end, to enhance strain energy in a wind tunnel. The output voltage of the PCB cantilever harvester was increased as the wind speed increased. The maximum output power was 17.2 ㎼ at a resistance load of 200 ㏀ and wind speed of 9 m/s. It is considered that the PCB cantilever energy harvester reveals a potential use for wind energy harvester applications.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.8 no.5
• /
• pp.1076-1081
• /
• 2007

In this paper, we propose a new switch structure for time division duplex(TDD) system. The existing TDD structure utilizes a circulator fur isolation characteristic between ports. However, the circulator produces intermodulation distortion signals which are undesired signal because of its nonlinear properties. The proposed circuit is composed of a modified branch-line hybrid coupler which controls the signal flow while the isolated port is open-/short- terminated. In order to prove the validity of the presented structure, the switch circuit is fabricated and measured at 2.3GHz, the center frequency of Wibro service system.

• Bulletin of the Korean Chemical Society
• /
• v.28 no.1
• /
• pp.33-40
• /
• 2007

We have designed and synthesized three Zn(II)-porphyrin derivatives, such as Zn(II) porphyrin ([G-0]Zn-P1) and aryl ether-typed dendron substituted Zn(II)-porphyrin derivatives ([G-1]Zn-P1 and [G-1]Zn-P-CN1). Their chemical structures were characterized by 1H-NMR, FT-IR, UV-vis absorption, EI-mass, and MALDI-TOF mass spectroscopies. Their electrochemical properties were studied by cyclic voltammetry measurement. These Zn(II)-porphyrin derivatives have been used to fabricate dye-sensitized solar cells (DSSCs) based on solid polymeric electrolytes as dye sensitizers and their device performances were evaluated by comparing with that of a standard Ru(II) complex dye. [G-1]Zn-P-CN1 showed the enhanced power conversion efficiency than those of other porphyrin derivatives, as expected. Short-circuit photocurrent density (Jsc), open-circuit voltage (Voc), fill factor (FF), and power conversion efficiency (η) of solid-typed DSSC for [G-1]Zn-P-CN1 were evaluated to be Jsc = 11.67 mA/cm2, Voc = 0.51 V, FF = 0.46, and η = 2.76%, respectively.

• Korean Journal of Materials Research
• /
• v.20 no.9
• /
• pp.483-487
• /
• 2010

To fabricate $TiO_2$ nanoparticle-based dye sensitized solar cells (DSSCs) at a low-temperature, DSSCs were fabricated using hydropolymer and ZnO nanoparticles composites for the electron transport layer around a low-temperature ($200^{\circ}C$). ZnO nanoparticle with 20 nm and 60 nm diameter were used and Pt was deposited as a counter electrode on ITO/glass using an RF magnetron sputtering. We investigate the effect of ZnO nanoparticle concentration in hydropolymer and ZnO nanoparticle solution on the photoconversion performance of the low temperature fabricated ($200^{\circ}C$) DSSCs. Using cis-bis(isothiocyanato)bis(2,20 bipyridy1-4,40 dicarboxylato) ruthenium (II) bis-tetrabutylammonium (N719) dye as a sensitizer, the corresponding device performance and photo-physical characteristics are investigated through conventional physical characterization techniques. The effect of thickness of the ZnO photoelectrode and the morphology of the ZnO nanoparticles with the variations of hydropolymer to ZnO ratio on the photoconversion performance are also investigated. The morphology of the ZnO layer after sintering was examined using a field emission scanning electron microscope (FE-SEM). 60 nm ZnO nanoparticle DSSCs showed an incident photon-to-current conversion efficiency (IPCE) value of about 7% higher than that of 20 nm ZnO nanoparticle DSSCs. The maximum parameters of the short circuit current density ($J_{sc}$), the open circuit potential ($V_{oc}$), fill factor (ff), and efficiency ($\eta$) in the 60 nm ZnO nanoparticle-based DSSC devices were 4.93 mA/$cm^2$, 0.56V, 0.40, and 1.12%, respectively.

• Current Photovoltaic Research
• /
• v.8 no.4
• /
• pp.129-133
• /
• 2020

It is very important to optimize the reflectance of incident light in solar modules for improving output power and reducing loss of cell-to-module (CTM). It is assumed that a higher reflectance backsheet may improve optical efficiency. However how much output power is related to optical properties by reflectance property of backsheets have not been revealed clearly yet. A total of 3 types of industrial backsheets with 3 type of industrial encapsulants (EVA or POE) were analyzed as fabricated mini modules used shingled cells. According to the type of backsheets, the difference between the highest and lowest average reflectance in the range of 400 nm to 1200 nm was found to be 13.08% by UV-visible spectroscopy. Also, when using the same encapsulant, the maximum gap value of the output power increase was measured by about 3.755 mW% (166.02 mW). The correlation between reflectance and output power was experimentally found by measuring the output property of the fabricated shingled mini modules.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.9 no.2
• /
• pp.91-97
• /
• 2009

The performance of GaInP/GaAs tandem solar cells with AlInP growth temperatures of 680$^{\circ}C$ and 700 $^{\circ}C$ on n-type GaAs (100) substrate with 2$^{\circ}$ and 6$^{\circ}$ tilt angles has been investigated. The series resistance and open circuit voltage of the fabricated tandem solar cells are affected by the substrate tilt angles and the growth temperatures of the window layer when zinc is doped in the tunnel diode. With carbon doping as a p-type doping source in the tunnel diode and the effort of current matching between top and bottom cells, GaInP/GaAs tandem solar cell has been exhibited 25.58% efficiency.

• Resources Recycling
• /
• v.21 no.3
• /
• pp.56-64
• /
• 2012

It is generally well known that PCB (Printed Circuit Board) is an electric component assembled by various metals mixed with plastics and ceramics. Accordingly, it is very important to extract metallic components from used PCBs from the point of view of recycling of used resources as well as an environmental protection. In this paper, patents and paper on the recycling technologies of PCB were analyzed. The range of search was limited in the open patents of USA (US), European Union (EP), Japan (JP), Korea (KR) and SCI journals from 1980 to 2011. Patents and journals were collected using key-words searching and filtered by filtering criteria. The trends of the patents and journals was analyzed by the years, countries, companies, and technologies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.3
• /
• pp.246-251
• /
• 2013

Screen printing is commonly used to form the front/back electrodes in silicon solar cell. But it has caused high resistance and low aspect ratio, resulting in decreased conversion efficiency in solar cell. Recently the plating method has been combined with screen-printed c-Si solar cell to reduce the resistance and improve the aspect ratio. In this paper, we investigated the effect of light induced silver plating with screen-printed c-Si solar cells and compared their electrical properties. All wafers were textured, doped, and coated with anti-reflection layer. The metallization process was carried out with screen-printing, followed by co-fired. Then we performed light induced Ag plating by changing the plating time in the range of 20 sec~5min with/without external light. For comparison, we measured the light I-V characteristics and electrode width by optical microscope. During plating, silver ions fill the porous structure established in rapid silver particle sintering during co-firing step, which results in resistance decrease and efficiency improvement. The plating rate was increased in presence of light lamp, resulting in widening the electrode with and reducing the short-circuit current by shadowing loss. With the optimized plating condition, the conversion efficiency of solar cells was increased by 0.4% due to decreased series resistance. Finally we obtained the short-circuit current of 8.66 A, open-circuit voltage of 0.632 V, fill factor of 78.2%, and efficiency of 17.8% on a silicon solar cell.

• Current Photovoltaic Research
• /
• v.10 no.2
• /
• pp.33-38
• /
• 2022

Planner configuration thin film solar cells (TFSCs) with SnS/CdS heterojunction performed a lower short-circuit current (J_SC). In this study, we have demonstrated a path to overcome deficiency in J_SC by the incorporation of Se in the SnS absorber. We carried out the incorporation of Se in VTD grown SnS absorber by rapid thermal annealing (RTA). The diffusion of Se is mostly governed by RTA temperature (T_RTA), also it is observed that film structure changes from cube-like to plate-like structure with T_RTA. The maximum J_SC of 23.1 mA cm^-2 was observed for 400℃ with an open-circuit voltage (V_OC) of 0.140 V for the same temperature. The highest performance of 2.21% with J_SC of 18.6 mA cm^-2, V_OC of 0.290 V, and fill factor (FF) of 40.9% is observed for a T_RTA of 300℃. In the end, we compare the device performance of Se- incorporated SnS absorber with pristine SnS absorber material, increment in J_SC is approximately 80% while a loss in V_OC of about 20% has been observed.