• 수산해양기술연구
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• 제14권2호
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• pp.79-87
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• 1978

기관밸브용접 SCr4-21-4N 및 SUH3-21-4N을 연구선정된 최적마찰압접조건 하에서 마찰압접을 하고 이때 생기는 압접부의 잔류응력 및 경도의 peak 등 압접결함의 제거 및 압접성능개선을 위한 열처리에 관하여 실험연구한 결과 다음과 같은 결론을 얻었다. (1) 배기 valve용강 SCr4-21-4N 및 SUH3-21-4N의 마찰압접을 위한 최적조건으로서 회전수 3,000rpm, 마찰가열압 p 하(1)=8 kg/mm 상(2), upset 압 p 하(2)=20 kg/mm 상(2), 압접가열시간 t 하(1)=3초, upset 시간 2.5초를 선정한 것이 매우 타당함이 실험적으로 입증되었다. (2) 이종재질 SUH3-SUH31, SCr4-SUH31, SCr4-SUH3, SUH3-CRK22, SCr4-21-4N 및 SUH3-21-4N의 마찰압접에 관한 저자의 종래 연구와 본연구 결과는 압접부의 압접 특성이 서로 매우 일치하였다. (3) SCr4-21-4N 및 SUH3-21-4N의 마찰압접부의 잔류응력 및 전도의 peak를 제거하기 위한 최적열처리조건은 $600^{\circ}C$$\times$30min.$\times$room air cooling의 normalizing임이 확인되었다. (4) 이때 열처리 후에는, 열처리전의 인장강도의 약 20%가 감소했으나, 파단 위치는 열영향부로부터 모재 SCr4 및 SUH3 측으로 이동하였다. (5) 상기 최적조건 하에서 마찰압접되고 열처리된 압접부의 현미경 조직검사 결과, 압접부가 매우 좁고 압접결함이 없으며, 치밀하고 조밀한 조직의 우수한 압접이었음이 확인되었다. (6) 상기 최적조건은, 기관 valve 생산을 위한 타이종재질의 마찰압접조건으로도 응용될 수 있을 것이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.61.1-61.1
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• 2015

Nanoscale semiconductor plasma processing has become one of the most challenging issues due to the limits of physicochemical fabrication routes with its inherent complexity. The mission of future and emerging plasma processing for development of next generation semiconductor processing is to achieve the ideal nanostructures without abnormal profiles and damages, such as 3D NAND cell array with ultra-high aspect ratio, cylinder capacitors, shallow trench isolation, and 3D logic devices. In spite of significant contributions of research frontiers, these processes are still unveiled due to their inherent complexity of physicochemical behaviors, and gaps in academic research prevent their predictable simulation. To overcome these issues, a Korean plasma consortium began in 2009 with the principal aim to develop a realistic and ultrafast 3D topography simulator of semiconductor plasma processing coupled with zero-D bulk plasma models. In this work, aspects of this computational tool are introduced. The simulator was composed of a multiple 3D level-set based moving algorithm, zero-D bulk plasma module including pulsed plasma processing, a 3D ballistic transport module, and a surface reaction module. The main rate coefficients in bulk and surface reaction models were extracted by molecular simulations or fitting experimental data from several diagnostic tools in an inductively coupled fluorocarbon plasma system. Furthermore, it is well known that realistic ballistic transport is a simulation bottleneck due to the brute-force computation required. In this work, effective parallel computing using graphics processing units was applied to improve the computational performance drastically, so that computer-aided design of these processes is possible due to drastically reduced computational time. Finally, it is demonstrated that 3D feature profile simulations coupled with bulk plasma models can lead to better understanding of abnormal behaviors, such as necking, bowing, etch stops and twisting during high aspect ratio contact hole etch.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권3호
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• pp.360-369
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• 2012

The causes of showing different subthreshold slopes (SS) in programmed and erased states for two different charge trap flash (CTF) memory devices, SONOS type flash memory with gate-all-around (GAA) structure and TANOS type NAND flash memory with planar structure were investigated. To analyze the difference in SSs, TCAD simulation and low-frequency noise (LFN) measurement were fulfilled. The device simulation was performed to compare SSs considering the gate electric field effect to the channel and to check the localized trapped charge distribution effect in nitride layer while the comparison of noise power spectrum was carried out to inspect the generation of interface traps ($N_{IT}$). When each cell in the measured two memory devices is erased, the normalized LFN power is increased by one order of magnitude, which is attributed to the generation of $N_{IT}$ originated by the movement of hydrogen species ($h^*$) from the interface. As a result, the SS is degraded for the GAA SONOS memory device when erased where the $N_{IT}$ generation is a prominent factor. However, the TANOS memory cell is relatively immune to the SS degradation effect induced by the generated $N_{IT}$.

• 한국작물학회지
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• 제38권3호
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• pp.235-239
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• 1993

모시풀 재배에 있어서의 적정 시비량을 알고자 휴지재식 초년부터 성원이된 4년째까지 시험조사한 결과를 요약하면 다음과 같다. 1. 모시풀의 경신장에는 비료 3요소중 질소, 칼리의 증시효과가 컸고, 석회도 경신장에 크게 작용하는 것으로 생각되었다. 2. 기준시비량 $P_2O_5$-$K_2$O=9-3-9kg/10a에 비하여 질소는 2～3배, 칼리는 2배비 시용에서 수량이 증대되었고, 그 중 10a당 질소 18kg, 인산 3kg, 칼리 18kg와 석회 200kg 시용의 경우 가장 유효경 비율도 높았으며 조섬유 수량에서도 33% 증수되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.122-122
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• 2008

Recently, Metal/Alumina/Silicon-Nitride/Silicon-Oxide/Silicon (MANOS) structures are one of the most attractive candidates to realize vertical scaling of high-density NAND flash memory [1]. However, as ANO layers are miniaturized, negative and positive bias temperature instability (NBTI/PBTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density increase, ${\Delta}D_{it}$, the gate leakage current, ${\Delta}I_G$. and the retention characteristics, in MONOS capacitors, becomes an important issue in terms of reliability. It is well known that tunnel oxide degradation is a result of the oxide and interfacial traps generation during FN (Fowler-Nordheim) stress [2]. Because the bias temperature stress causes an increase of both interfacial-traps and fixed oxide charge could be a factor, witch can degrade device reliability during the program and erase operation. However, few studies on NBTI/PBTI have been conducted on improving the reliability of MONOS devices. In this work, we investigate the effect of post-annealing gas on bias temperature instability (BTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density shift, ${\Delta}I_G$ retention characteristics, and the gate leakage current characteristics of MANOS capacitors. MANOS samples annealed at $950^{\circ}C$ for 30 s by a rapid thermal process were treated via additional annealing in a furnace, using annealing gases $N_2$ and $N_2-H_2$ (2 % hydrogen and 98 % nitrogen mixture gases) at $450^{\circ}C$ for 30 min. MANOS samples annealed in $N_2-H_2$ ambient had the lowest flat band voltage shift, ${\Delta}V_{FB}$ = 1.09/0.63 V at the program/erase state, and the good retention characteristics, 123/84 mV/decade at the program/erase state more than the sample annealed at $N_2$ ambient.

• Asian Pacific Journal of Cancer Prevention
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• 제15권7호
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• pp.3207-3210
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• 2014

Background: Inflammatory breast cancer (IBC) is an aggressive form of locally advanced breast cancer characterized by rapidly progressive breast erythema, pain and tenderness, oedema and paeu d'orange appearance. It accounts for 1-3% of all newly diagnosed cases of breast cancer in the west. Data on IBC from India are lacking. The aim of our study was to assess the clinical-pathological parameters and outcome of IBC at, All India Institute of Medical Sciences, a large tertiary care centre. Materials and Methods: We screened 3,650 breast cancer cases registered from January 2004 to December 2012 and found 41 cases of IBC. Data included demographics as well as clinical, radiological and histopathological characteristics, and were collected from clinical case records using the International Classification of Diseases code (C-50). Patients who presented with IBC as a recurrence, or who had a neglected and advanced breast cancer that simulated an IBC were excluded from this study. Results: The median age was 45 years (range 23-66). The median duration of symptoms was 5 months. The American Joint Committee on Cancer stage (AJCC) distribution was Stage III - 26 and IV - 15 patients. Estrogen receptor (ER), progesterone receptor (PR) positivity and human epidermal growth factor receptor 2 (HER2/neu) positivity were 50%, 46% and 60%, respectively. Triple negativity was found in 15% of the cases. All the non metastatic IBC patients received anthracycline and/ or taxane based chemotherapy followed by modified radical mastectomy, radiotherapy and hormonal therapy as indicated. Pathological complete remission rate was 15%. At a median follow-up of 30 months, the 3 year relapse free survival and overall survival were 30% and 40%respectively. Conclusion: IBC constituted 1.1% of all breast cancer patients at our centre. One third of these had metastatic disease at presentation. Hormone positivity and Her2 neu positivity were found in 50% and 60% of the cases, respectively.

• Asian Pacific Journal of Cancer Prevention
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• 제16권10호
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• pp.4409-4419
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• 2015

The Bhopal gas tragedy involving methyl isocyanate (MIC) is one of the most horrific industrial accidents in recent decades. We investigated the genotoxic effects of MIC in long-term survivors and their offspring born after the 1984 occurrence. There are a few cytogenetic reports showing genetic damage in the MIC-exposed survivors, but there is no information about the associated cancer risk. The same is true about offspring. For the first time, we here assessed the micronucleus (MN) frequency using cytokinesis-blocked micronucleus (CBMN) assay to predict cancer risk in the MIC-affected population of Bhopal. A total of 92 healthy volunteers (46 MIC-affected and 46 controls) from Bhopal and various regions of India were studied taking gender and age into consideration. Binucleated lymphocytes with micronuclei (BNMN), total number of micronuclei in lymphocytes (MNL), and nuclear division index (NDI) frequencies and their relationship to age, gender and several lifestyle variabilities (smoking, alcohol consumption and tobacco-chewing) were investigated. Our observations showed relatively higher BNMN and MNL (P<0.05) in the MIC-affected than in the controls. Exposed females (EF) exhibited significantly higher BNMN and MNL (P<0.01) than their unexposed counterparts. Similarly, female offspring of the exposed (FOE) also suffered higher BNMN and MNL (P<0.05) than in controls. A significant reduction in NDI (P<0.05) was found only in EF. The affected group of non-smokers and non-alcoholics featured a higher frequency of BNMN and MNL than the control group of non-smokers and non-alcoholics (P<0.01). Similarly, the affected group of tobacco chewers showed significantly higher BNMN and MNL (P<0.001) than the non-chewers. Amongst the affected, smoking and alcohol consumption were not associated with statistically significant differences in BNMN, MNL and NDI. Nevertheless, tobacco-chewing had a preponderant effect with respect to MNL. A reasonable correlation between MNL and lifestyle habits (smoking, alcohol consumption and tobacco-chewing) was observed only in the controls. Our results suggest that EF and FOE are more susceptible to cancer development, as compared to EM and MOE. The genotoxic outcome detected in FOE reflects their parental exposure to MIC. Briefly, the observed cytogenetic damage to the MIC-affected could contribute to cancer risk, especially in the EF and FOE.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.546-546
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• 2008

Copper (Cu) Chemical mechanical polishing (CMP) has been an essential process for Cu wifing of DRAM and NAND flash memory beyond 45nm. Copper has been employed as ideal material for interconnect and metal line due to the low resistivity and high resistant to electro-migration. Damascene process is currently used in conjunction with CMP in the fabrication of multi-level copper interconnects for advanced logic and memory devices. Cu CMP involves removal of material by the combination of chemical and mechanical action. Chemicals in slurry aid in material removal by modifying the surface film while abrasion between the particles, pad, and the modified film facilitates mechanical removal. In our research, we emphasized on the role of chemical effect of slurry on Cu CMP, especially on the effect of amine functional group on removal rate selectivity between Cu and Tantalum-nitride (TaN) film. We investigated the two different kinds of complexing agent both with amine functional group. On the one hand, Polyacrylamide as a polymer affected the stability of abrasive, viscosity of slurry and the corrosion current of copper film especially at high concentration. At higher concentration, the aggregation of abrasive particles was suppressed by the steric effect of PAM, thus showed higher fraction of small particle distribution. It also showed a fluctuation behavior of the viscosity of slurry at high shear rate due to transformation of polymer chain. Also, because of forming thick passivation layer on the surface of Cu film, the diffusion of oxidant to the Cu surface was inhibited; therefore, the corrosion current with 0.7wt% PAM was smaller than that without PAM. the polishing rate of Cu film slightly increased up to 0.3wt%, then decreased with increasing of PAM concentration. On the contrary, the polishing rate of TaN film was strongly suppressed and saturated with increasing of PAM concentration at 0.3wt%. We also studied the electrostatic interaction between abrasive particle and Cu/TaN film with different PAM concentration. On the other hand, amino-methyl-propanol (AMP) as a single molecule does not affect the stability, rheological and corrosion behavior of the slurry as the polymer PAM. The polishing behavior of TaN film and selectivity with AMP appeared the similar trend to the slurry with PAM. The polishing behavior of Cu film with AMP, however, was quite different with that of PAM. We assume this difference was originated from different compactness of surface passivation layer on the Cu film under the same concentration due to the different molecular weight of PAM and AMP.