• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.42-45
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• 2017

In this paper, a transformer type SFCL (superconducting fault current limiter) using an additional magnetically coupled circuit was suggested. Its transient fault current limiting characteristics, due to the winding direction of additional coupled circuit, were analyzed through fault current limiting tests. The suggested transformer type SFCL was composed of the primary winding, and one secondary winding wound on the same iron core together with an additional magnetically coupled circuit. That circuit consists of the other secondary winding together with the other SC (superconducting) element connected in parallel with its other secondary winding. As one of the effective design parameters to affect the transient fault current of the SFCL, the fault current limiting tests of the suggested SFCL were carried out considering the winding direction of its additional coupled circuit. It was confirmed that, through the analysis on the fault current tests of the SFCL, the quench sequence of two SC elements comprising the suggested SFCL could be adjusted by the winding direction of the additional coupled circuit.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.6
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• pp.828-833
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• 2014

Grid connected transformerless solar power generation system is frequently used with the benefits of cost and efficiency. However, significant DC leakage current can flow from the DC line into the ground with dielectric breakdown in the transformerless solar power generation system. The leakage current occurred in the DC line causes accidents such as fire and electric shock on human. To resolve this problem, high sensitivity DC leakage current sensor is needed. But recently the studies on safety of DC line are not performed. In this paper, a high sensitivity DC leakage current sensor that can detect DC leakage current in solar power generation system, is proposed. Based on the studies, DC leakage current sensor is fabricated and characteristic tests are carried out. Finally, the accuracy of sensor performance is verified by leakage current experiments in solar power generation system.

• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1070-1077
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• 1998

Effect of current collecting layer on the cathode was characterized by AC impedance spectroscopy at 800$^{\circ}C$ under flowing air. LSM-YSZ composite cathode showed lower polarization resistance due to the in-crease of triple phase (LSM/YSZ/Pore) boundary length by incorporation of YSZ. Ohmic resistance {{{{ {R }_{1 } }} of LSM-YSZ was higher than that of pure LSM however because in-plane resistance of the cathode was fair-ly high due to its high specific resistivity. To reduce the in-plane resistance of LSM-YSZ cathode cathode side current collecting layer was required. Ohmic resistance {{{{ {R }_{1 } }} was reduced after forming LSM current col-lecting layer on the LSM-YSZ cathode. In case of pure LSM cathode the formation of Pt, or LSCO current collecting layer reduced polarization resistance {{{{ {R }_{p } }} but ohmic resistance {{{{ {R }_{1 } }} was relatively constant. After annealing of LSM cathode with Pt current collector at higher temperature polarization resistance {{{{ {R }_{p } }} was in-creased but ohmic resistance {{{{ {R }_{1 } }} was constant. These phenomena indicate that Pt or LSCo current col-lecting layers act as a catalytic layer for oxygen reduction of pure LSM cathode. LSCO current collector was effective in reducing the ohmic and polarization resistance of LSM-YSZ cathode.

• The Transactions of the Korean Institute of Power Electronics
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• v.11 no.4
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• pp.307-312
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• 2006

This paper proposes the SRM drive system, which accurately estimates the phase currents from the DC-link current to drive SRM instead of detecting the three-phase currents. In addition, the detecting circuit of DC-link current is also proposed to increase the resolution and decrease the off-set influence. Comparing with the general drive system based on the phase current, it is verified through the experiments that the proposed SRM drive system based on the DC-link current has the good performance in steady-state response of the speed control. Using the DC-link current, all of the 3-phase currents can be easily estimated for driving the SRM.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1014-1020
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• 2010

In order to improve the purity on deposit in cobalt electrowining, a fundamental study using Pulse-Reverse Current (PRC) was carried out. Based on a sulfate solution, Cu, Ni, and Fe as impurities were added during cobalt electrowinning. There were four reverse waveforms and frequency conditions from 1 Hz to 10 kHz, and the purity of each condition was compared with the Direct Current (DC) purity. From the results, it was found that the anodic potential induced by reverse current affects selective dissolution of impurities. In this work, the case of the highest reverse peak current density ($I_r$) with a short reverse time ($t_r$) at 100 Hz showed a higher purity than that of the DC. This PRC condition also showed only a 4% low current efficiency comparable to the DC. We concluded that an optimized PRC for cobalt electrowinning could improve the purity with little loss of current efficiency.

• Progress in Superconductivity and Cryogenics
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• v.25 no.1
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• pp.16-20
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• 2023

The International Electrotechnical Commission (IEC) 61788-26:2020 provides guidelines for measuring the critical current of Rare-earth barium copper oxide (REBCO) tapes using two methods: linear ramp and step-hold methods. The critical current measurement criterion, 1 or 0.1 μV/cm of electric field from IEC 61788-26 has been normally applied to REBCO coils or magnets. No-insulation (NI) winding technique has many advantages in aspects of electrical and thermal stability and mechanical integrity. However, the leak current from the NI REBCO coil can cause distortion in critical current measurement due to the characteristic resistance which causes the radial current flow paths. In this paper, we simulated the NI REBCO coil by applying both linear ramp and step-hold methods based on a simplified equivalent circuit model. Using the circuit analysis, we analyzed and evaluated both methods. By using the equivalent circuit model, we can evaluate the critical current of the NI REBCO coil, resulting in an estimation error within 0.1%. We also evaluate the accuracy of critical current measurement using both the linear ramp and step-hold methods. The accuracy of the linear ramp method is influenced by the inductive voltage, whereas the accuracy of the step-hold method depends on the duration of the hold-time. An adequate hold time, typically 5 to 10 times the time constant (τ), makes the step-hold method more accurate than the linear ramp method.

• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.1789-1794
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• 2014

This paper suggests an application method for a superconducting fault current limiter (SFCL) using an evaluation index to estimate the risk regarding the short-circuit capacity of the circuit breaker (CB). Recently, power distribution systems have become more complex to ensure that supply continuously keeps pace with the growth of demand. However, the mesh or loop network power systems suffer from a problem in which the fault current exceeds the short-circuit capacity of the CBs when a fault occurs. Most case studies on the application of the SFCL have focused on its development and performance in limiting fault current. In this study, an analysis of the application method of an SFCL considering the risk of the CB's short-circuit capacitor was carried out in situations when a fault occurs in a loop network power system, where each line connected with the fault point carries a different current that is above or below the short-circuit capacitor of the CB. A loop network power system using PSCAD/EMTDC was modeled to investigate the risk ratio of the CB and the effect of the SFCL on the reduction of fault current through various case studies. Through the risk evaluations of the simulation results, the estimation of the risk ratio is adequate to apply the SFCL and demonstrate the fault current limiting effect.

• Proceedings of the KIEE Conference
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• 2005.04a
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• pp.180-182
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• 2005

The current control using a conventional hysteresis controller of a STATCOM based on two level VSI (Voltage Source Inverter) has high switching frequency and variable modulation frequency. This will increase the switching loss. In addition, the current error is not strictly limited So, in this paper to reduce the switching frequency and to maintain the constant modulation frequency, a novel double band hysteresis current controller based on 3-level VSI is proposed. A conventional hysteresis current control and a novel hysteresis current control was tested with digital simulation and verified the advantage of the novel hysteresis current controller.

• Transactions on Electrical and Electronic Materials
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• v.13 no.1
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• pp.35-38
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• 2012

In this study, we have attempted to characterize the photovoltaic effect in real-time measurement of photoinduced current in a poly-Si-based solar cell using photoconductive atomic force microscopy (PC-AFM). However, the high contact resistance that originates from the metal-semiconductor Schottky contact disturbs the current flow and makes it difficult to measure the photoinduced current. To solve this problem, a thin metallic film has been coated on the surface of the device, which successfully decreases the contact resistance. In the PC-AFM analysis, we used a metal-coated conducting cantilever tip as the top electrode of the solar cell and light from a halogen lamp was irradiated on the PC-AFM scanning region. As the light intensity becomes stronger, the current value increases up to $200{\mu}A$ at 80 W, as more electrons and hole carriers are generated because of the photovoltaic effect. The ratio of the conducting area at different conditions was calculated, and it showed a behavior similar to that generated by a photoinduced current. On analyzing the PC-AFM measurement results, we have verified the correlation between the light intensity and photoinduced current of the poly-Si-based solar cell in nanometer scale.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.204.2-204.2
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• 2015

산화물 반도체는 비정질임에도 불구하고 높은 이동도를 나타내며, 적은 누설 전류, 낮은 소비전력, 저온 공정 가능, 가시광선 영역에서 투명한 성질을 가지고 있다. 이와 같은 다양한 장점들로 인해 산화물 반도체를 이용한 트랜지스터는 차세대 플랫 패널 디스플레이 적용에 있어서 핵심 기술로 각광받고 있다. 한편, 소자의 크기가 점점 더 작아짐에 따라 고집적화에 따른 scaling down은 항상 언급되는 이슈이다. 이와 관련하여 소자의 높은 on current는 트랜지스터를 더 작게 구현할 수 있다는 가능성을 보여준다. 따라서 현재 소자의 on current를 높이기 위해서 소자의 구조를 변형하는 연구가 활발히 진행되고 있다. 본 연구에서는 소자의 on current를 높이기 위한 방법으로 ITO buried layer를 이용한 산화물 반도체 pseudo 트랜지스터를 제작하였다. 먼저 채널을 형성하기 전에 ITO buried layer를 형성시켜준 후, 채널 영역으로서 InGaZnO (2:1:1)를 용액 공정을 이용하여 형성시켰다. 이어서 소자의 전기적 특성 향상을 위해 마이크로웨이브 열처리를 1800 W에서 2분간 실시하였다. 또한 대조군으로 ITO buried layer를 갖지 않는 소자를 같은 방법으로 제작하여 평가하였다. 그 결과 ITO buried later를 갖는 소자에서 대조군과 비교하여 높은 on current를 나타냄을 확인하였다. 이와 같은 결과는 낮은 저항의 ITO buried layer가 current path를 제공함과 동시에 더 두꺼운 채널 층을 형성시켜 높은 on current에 기여하기 때문이다. 결과적으로 ITO buried layer를 갖는 소자 구조를 이용함으로써 고성능 트랜지스터를 제작하여 소자를 집적화 함에 있어서 유망한 소자가 될 것으로 예상된다.