• Title/Summary/Keyword: Omega phase

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Analysis of Inverter Circuit with External Electrode Fluorescent Lamps for LCD Backlight (LCD 백라이트용 외부전극 형광램프의 인버터 회로 해석)

  • Jeong, Jong-Mun;Shin, Myeong-Ju;Lee, Mi-Ran;Kim, Ga-Eul;Kim, Jung-Hyun;Kim, Sang-Jin;Lee, Min-Kyu;Kang, Mi-Jo;Shin, Sang-Cho;Ahn, Sang-Hyun;Gill, Do-Hyun;Yoo, Dong-Gun;Koo, Je-Huan
    • Journal of the Korean Vacuum Society
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    • v.15 no.6
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    • pp.587-593
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    • 2006
  • The circuit of the EEFL system and the inverter has been analyzed into the resistance RL, the capacitance C of the EEFL-backlight system, and the inductance of transformer in the inverter. The lamp resistance and capacitance are deter-mined from the phase difference is between the lamp current and voltage and from the Q-V diagram, respectively. The single Lamp of EEFL for 32' LCD-BLU has the resistance of $66\;k\Omega$ and the capacitance of 21.61 pF. The resistance, which is connected by parallel in the 20-EEFLS BLU, is $3.3\;k\Omega$ and the capacitance is 402.1 pF. The matching frequency in the operation of lamp system is noted as $\omega_M=1/\sqrt{L_2C(1-k^2)}$, where $L_2$ is the inductance of secondary coil and k is the coupling coefficient between primary and secondary coil. The lamp current and voltage has maximum value at the matching frequency in the LCD BLU system. The results of analytic solutions are in good agreement with the experimental results.

A Development of SFD for the measurement of rotational velocity vector (회전 속도 Vector 계측을 위한 공간필터 검출기의 개발)

  • Go, Hyun-Min;Rho, Do-Hwan
    • Proceedings of the KIEE Conference
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    • 1999.11c
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    • pp.621-624
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    • 1999
  • In this paper, we propose the non-contact method to measure rotational speed vector using spatial filtering method. The rotational speed $\omega$ is known by the frequency of output sinusoidal signal direct proportional to that and the rotational direction is given by the phase delay from the weighting function design of spatial filter.

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Design of real time FIR filter for removal of noise in ECG (ECG 신호의 잡음 제거를 위한 실시간 FIR 필터의 설계)

  • 황선철;이경중;이명호
    • 제어로봇시스템학회:학술대회논문집
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    • 1987.10b
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    • pp.690-693
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    • 1987
  • Base-line wandering and 60Hz noise in ECG are removed by linear phase FIR filter. The important problem in FIR filtering is to reduce the number of impulse response coefficients. It can be reduced by symmetrical impulse response. The ripple is improved by window function .omega.(n). And the determination of filter accuracy is proposed by PRD(percent rms difference) algorithm.

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Simultaneous Quench Analysis of a Three-Phase 6.6 kV Resistive SFCL Based on YBCO Thin Films (YBCO 박막을 이용한 3상 6.6kV 항형 초전도 한류기의 동시Quench 분석)

  • Sim J;Kim H. R;Hyun O. B
    • Progress in Superconductivity
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    • v.6 no.1
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    • pp.46-51
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    • 2004
  • We fabricated a resistive type superconducting fault current limiter (SFCL) of 3-phase $6.6 kV_{rms}$ / rating, based on YBCO thin films grown on sapphire substrates with a diameter off inch. Each element of the SFCL was designed to have the rated voltage of $600 V_{rms}$ $/35A_{rms}$. The elements produced a single phase with 8${\times}$6 components connected in series and parallel. In addition, a NiCr shunt resistor of 23 $\Omega$ was connected in parallel to each of them for simultaneous quenches between the elements. Prior to investigating the performance of the 3 phase SFCL, we examined the quench characteristics for 8 elements connected in series. For all elements, simultaneous quenches and equal voltage distribution within 10% deviation from the average were obtained. Based on these results, performance of the SFCL for single line-to-ground faults was investigated. The SFCL successfully limited the fault current of $10 kA_{ rms}$ below 816 $A_{peak}$ within 0.12 msec right after the fault occurred. During the quench process, average temperature of all components did not exceed 250 K, and the SFCL was totally safe during the whole operation.

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Thermotropic Liquid Crystalline Properties of α,ω-Bis(4-cyanoazobenzene-4'-oxy)alkanes (α,ω-비스(4-사이아노아조벤젠-4'-옥시)알케인들의 열방성 액정 특성)

  • Jeong, Seung Yong;Kim, Hyo Gap;Ma, Yung Dae
    • Applied Chemistry for Engineering
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    • v.22 no.4
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    • pp.358-366
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    • 2011
  • A homologous series of linear liquid crystal dimers, the ${\alpha},{\omega}$-bis(4-cyano-azobenzene-4'-oxy)alkanes (CATWETn, where n, the number of methylene units in the spacer, is 2~10) were synthesized, and their thermotropic liquid crystalline phase behavior were investigated. The CATWETn with n of 3 and 6 exhibited monotropic nematic phases, whereas other derivatives showed enantiotropic nematic phases. The nematic-isotropic transition temperatures of the dimers and their entropy variation at the phase transition showed a large odd-even effect as a function of n. This phase transition behavior was rationalized in terms of the change in the average shape of the spacer on varying the parity of the spacer. The thermal stability and degree of order in the nematic phase and the magnitude of the odd-even effect of CATWETn were similar to those for the methoxy-, nitro-, and pentyl-substituted dimers, while they were significantly different from those for the monomesogenic compounds, 1-{4-(4'-cyanophenylazo)phenoxy}alkylbromides and the side-chain liquid-crystalline polymers, the poly[1-{4-(4'-cyanophenylazo)phenoxyalkyloxy}ethylene]s. The results were discussed in terms of 'virtual trimer model' by Imrie.

Ultra Shallow Junction wish Source/Drain Fabricated by Excimer Laser Annealing and realized sub-50nm n-MOSFET (엑시머 레이져를 이용한 극히 얕은 접합과 소스, 드레인의 형성과 50nm 이하의 극미세 n-MOSFET의 제작)

  • 정은식;배지철;이용재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.562-565
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    • 2001
  • In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20nm for arsenic dosage(2${\times}$10$\_$14//$\textrm{cm}^2$), exciter laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm and realized sub-50nm n-MOSFET.

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Electrical and Optical Properties of the ${\alpha}-In_2Se_3$ Single Crystal. (${\alpha}-In_2Se_3$ 단결정의 전기적 광학적 특성 연구)

  • Kim, Hyung-Gon;Kim, Nam-Oh;Kim, Byung-Chul;Lee, Woo-Sun
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1496-1499
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    • 2001
  • Optical and electrical properties of the $In_2Se_3$ single crystals grown by use of the Bridgman technique were examined in the transition temperature range between $\alpha$-phase and $\beta$-phase. $In_2Se_3$ single crystal has the rhombohedral structure and lattice constants are a=4.025 $\AA$, c=28.771 $\AA$ in C-axis. The transition temperatures of the stoichiometric $In_2Se_3$ single crystal is $10^{-2}{\Omega}cm^{-1}$ according to the specimens. However it varies rapidly in the transition region.

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Improved Phase Detection Technique under Frequency Variation of Single-Phase Power System (단상 계통의 주파수 변화시 개선된 위상검출 기법)

  • Park, Jin-Sang;Lee, Dong-Choon
    • Proceedings of the KIPE Conference
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    • 2013.07a
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    • pp.506-507
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    • 2013
  • 본 논문은 단상 전원 시스템에서 입력전원의 위상각 추정에 2차 일반화 적분기(Second-Order Generalized Integrator - SOGI)를 기반으로 하는 적응 필터구조를 적용한다. SOGI 출력은 전원 위상각과 관련되고, 올바른 출력을 위해서는 중심 주파수 ${\omega}^{\prime}$이 전원 주파수를 빠르게 추정할 수 있도록 FLL(Frequency Locked Loop)제어가 필요하다. SOGI-FLL의 기존의 방법과는 다르게 비선형 특성이 강한 주파수 동기화 동특성 모델에 퍼지제어를 적용함으로써 복잡한 선형화 과정이 필요하지 않으며, 실시간 이득 조절로 빠르게 전원 주파수 추정을 할 수 있는데 이는 최종적으로 빠른 전원 위상각 추정을 의미한다. 제안된 방법에 대해서 시뮬레이션을 통하여 그 타당성을 검증한다.

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A Study on the Ti-Silicide Formation (Ti-실리사이드 형성에 관한 연구)

  • Kim, Hark-Gyun;Joo, Seung-Ki
    • Proceedings of the KIEE Conference
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    • 1987.07a
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    • pp.454-457
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    • 1987
  • Formation of the titanium silicides was performed by the furnace annealing. Ti-silicide was formed by reacting Ti films with singlecrystalline silicon in vacuum or nitrogen ambient in the temperature range $500{\sim}900^{\circ}C$. The Ti-Si interaction in such films was investigated by using X-ray diffraction, and sheet resistance measurements. It was found that the dorminant crystal phase of silicide formed during annealing at $600{\sim}700^{\circ}C$ was TiSi, and $TiSi_2$ phase is associated with a very low sheet resistance(<$2{\Omega}/{\Box}$).

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PTCR Properties of $BaTiO_3$ Ceramic Variation of Dopant. ($BaTiO_3$ 세라믹스의 PTCR 특성)

  • Kang, Jeong-Min;Cho, Hyun-Moo;Lee, Jong-Deok;Park, Sang-Man;Lee, Young-Hie;Lee, Sung-Gap
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.61-63
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    • 2004
  • PTC Thermistors specimens were fabricated by added $MnO_2$ as donors, and $Nb_2O_5$ as acceptors and sintered $1250^{\circ}C$/2hrs. Average grain size decreased with increased in added $MnO_2$, and increased with added in $Nb_2O_5$. But, appeared liquid phase as $Bi_2O_3$ and $TiO_2$, affect to grain growth. XRD result, peak strength was lowed then crystallization not well, but, secondary phase were not showed all specimens. All specimens resistance were so high, about $40M{\Omega}$ over, couldn't measured to those resistance and doesn't appear PTCR effect.

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