• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.7-12
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• 2007

A SPICE-based 3-dimensional circuit model of LED(Light-Emitting Diode) was developed for the design optimization and analysis of high-brightness LEDs. An LED is represented as an array of pixel LEDs with small preassigned areas, and each of the pixel LEDs is composed of circuit networks representing the thin-film layers(n-metal, n- and p-type semiconductor layers, and p-metal), ohmic contacts, and pn-junctions. Each of the thin-film layers and contact resistances is modeled by a resistance network, and the pn-junction is modeled by a conventional pn-junction diode. It has been found that the simulation results using the model and the corresponding parameters precisely fit the measured LED characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.96-98
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• 1999

유기전계발광소자(OELD)의 성능 향상을 위한 많은 연구가 진행되고 있지만 아직까지 금속전극과 유기발 광층 사이의 접촉저항(Contact Resistance)에 관한 연구는 거의 보고되지 않고 있다. Ohmic 접합에서 접촉 저항은 효율적이고 신뢰성 있는 소자제작에 있어서 간과되어서는 안될 매우 중요한 부분이다. 본 연구에서는 금속전극과 유기발광충 사이의 접촉저항에 관해서 논의하고자 한다. 본 연구에서 제작된 샘플은 금속전극으로 Ag, 유기발광재료로서 Alq$_3$를 사용하였으며, Alq3의 두께를 100 $\AA$에서 500 $\AA$까지 각각 다르게 하여 서로 다른 두께의 유기발광층을 가지는 샘플을 제작하였다. 금속전극의 매트릭스 구조에 의해 형성된 적선의 크기는 3 mm x 2 mm이며, 제작된 샘플의 접촉비저항은 TLM(Transmission Line Measurement) 방법을 이용하여 구하였다. Planar한 TLM model로부터 새로운 vertical model을 유추하였으며, 이를 근거로 접촉저항 및 transfer length 등을 계산하였다. 상온에서 측정된 전체 저항값은 유기발광층의 두께가 증가함 에 따라 증가하는 경향을 나타냈으며, 이 때 계산된 접촉비저항은 1.49$\times$$10^1$ $\Omega$-$\textrm{cm}^2$ 이다. 접촉저항은 전극 사이의 거리의 증가에 따라 증가하지만, 측정시간의 thermal budget의 영향으로 상대적으로 전체저항이 감 소하였으나, 저항감소분의 포화에 따라서, 거리에 비례하여 다시 저항이 증가하였다.

• Nuclear Engineering and Technology
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• v.7 no.2
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• pp.95-106
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• 1975

A comparative study has been carried out on three silicon solar cell samples through their current-voltage (I-V) characteristics and their efficiencies. One sample is an ion-implanted cell made by our laboratory, and the other two samples are the dopant-diffused cells made by a foreign maker. The experiments have shown that both the properties of junction formation and the efficiency of each sample depend highly on the I-V characteristic of each p-n junction. The cause of incomplete properties in the ion-implanted sample has been clarified through this comparative study to be due to the various reasons such as slightly deficient surface impurity concentrations, defects induced by both the radiation and the foreign impurities, and insufficient ohmic contacts at the electrodes. The conversion efficiency of the ion-implanted sample can be figured out to be 4.2% whereas those of the other samples to be 14.3% and 8.3%, respectively.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1114-1116
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• 1995

P/N(CuO/ZnO) Heterojunction gas sensors were made by 2-step sintering methods and its gas sensing property was measured by varying the injected gases and the operating temperatures. As the applied voltage was increased in air ambients, the current-voltage characteristics shown the ohmic properties. However, when the CO gas ambients, 500 ppm at $200^{\circ}C$, the current-voltage characteristics behaves like a rectifying diode s after 3 mins later and its conduction mechanism is discussed qualitatively for the first times.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.432-432
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• 2009

본 연구에서는 HW-PLD(Hot-walled Pulsed Laser Deposition) 법을 이용하여 ZnO 나노와이어를 $Al_2O_3$ 기판 위에 성장하였다. 성장된 ZnO 나노와이어는 SEM, XRD, PL 분석을 통하여 구조적 특성을 확인하였으며, 성장된 나노와이어를 photolithography 공정을 통하여 FET(Field Effect Transistor)소자를 제작하였다. 제작된 소자의 I-V 특성 측정 결과 Ti/Au 전극과 ZnO nanowire 채널 간에 ohmic 접합이 형성된 것을 확인하였으며 게이트 전압의 증가에 따라 소스와 드레인 사이의 전류가 증가하는 전형적인 n-type FET소자 특성을 나타내었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.349-349
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• 2014

ITO는 결정질 실리콘 태양전지의 anti-reflection coating (ARC) 층으로써 적합한 물질이다. ARC layer로써 구조적, 전기적 그리고 광학적 최적 조건의 특성을 얻기 위해는 높은 figure of merit(FOM)를 가져야 하고 결정방향 제어를 해야 한다. 본 연구에서는 결정질 실리콘 태양전지에 가장 적합한 ITO ARC layer의 특성 찾기 위해 Radio frequency magnetron sputter를 이용하여 공정 조건가변 실험을 진행 하였으며 높은 FOM을 갖는 ITO 반사방지막을 shallow emitter형 결정질 실리콘 태양전지에 적용하였으며 ITO 박막은 shallow emitter층과 완벽한 ohmic 접합을 이루었다. ITO ARC layer를 적용한 Shallow emitter형 태양전지는 81.59%의 fill factor와 $35.52mA/cm^2$의 단락전류를 보이며 17.27%의 광변환 효율을 보였다.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.112-114
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• 2001

In this letter, we report on the investigation of Si/Ti, Pt/Si/Ti, Co/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $550^{\circ}C$ for 5 min, $850^{\circ}C$ for 2 min respectively. The contact resistances were measured using the transmission line model method, which resulted in specific $10^{-4}{\Omega}cm^2$, and the physical properties of the contactcontact resistivities in the $9.2{\times}10^{-4}$, $7.1{\times}10^{-4}$ and $4.5{\times}s$ were examined using microscopy, AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si, migration of into SiC. Overlayer of Pt, Co had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.155-162
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• 2002

The sensing properties of carbon monooxide were investigated as a function of mixing ratio and the lamination structure of 3mol% ZnO-doped $SnO_2$ and 3mol% $SnO_2$-doped ZnO. The lamination structures were fabricared monolayer, double layer, and hetero layer of $SnO_2$, Zno, and theirs mixture composition using thick film process. There was no second phase by the reaction of $SnO_2$ and ZnO. The conductance was decreased by the addition of ZnO in $SnO_2$, but it was increased with the addition of $SnO_2$ in ZnO. The conductance was increased with temperature and the inlet of CO. There was no improvement of sensitivity in the structure of mono- and double-layer. The hetero-layer structure, however, of $SnO_2$ 3ZnO-ZnO $3SnO_2$ showed the higher resistivity and the highest sensitivity. Ohmic characteristics was confirmed by the linear properties for I-V measurements.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.415-417
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• 2009

A low temperature decal (LTD) transfer method is tried to fabricated hydrocarbon (HC) membrane based MEA. Sandwiched structures of outer ionomer/catalyst/carbon coating/substrate, which had been developed for Nafion membrane, are used for transfer of catalyst to the HC membrane. Performances of the HC MEA before and after 500hr continuous operation are compared and it is found that a severe delamination occurs at the interface between the HC membrane and the catalyst layer, which is the main reason of the low performance and its degradation. The delamination is due probably to the different nature of HC membrane to the Nafion ionomer. A substitutional method, therefore, is suggested to overcome this. In such a way, the outer ionomer process is removed and the low transfer rate of catalyst by skipping the ionomer process is compensated with optimization of other process variables such as transfer time or temperature. The resulting performance is superior to the original LTD method, which can be explained in terms of low resistive components both in ohmic and kinetic.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.349-349
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• 2010

Great performance of many semiconductor devices requirs the use of low-resistance ohmic contact. Typically, transmission line method (TLM) patterns are used to measure the specific contact resistance between silicon and metal. In this works, we investigate contact resistance for metal dependent (Cr/Ag, Ni) using TLM pattern based on silicon-on-insulator (SOI) wafer. The electrode with Ni linearly increases contact resistance as the pattern distance increase from $15{\mu}m$ to $75{\mu}m$ in accumulation part, but non-linearly increase in inversion part. In additional, the electrode with Cr/Ag linearly increases contact resistance as the pattern distance increase from $15{\mu}m$ to $75{\mu}m$ in inversion part, but non-linearly increase in accumulation part.