• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.11
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• pp.1-7
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• 2018

In a microcolumn, a miniaturized electrostatic deflector is often adopted to scan an electron beam. Usually, a double octupole deflector is used because it can avoid excessive spherical aberrations by controlling the electron beam path close to the optical axis of the objective lens and has a wide scan field. Studies on microcolumns have been performed to improve the low throughput of an electron column through multiple column applications. On the other hand, as the number of microcolumns increases, the number of wires connected to the components of the microcolumn increases. This will result in practical problems during the process of connecting the wires to electronic controllers outside of the vacuum chamber. To reduce this problem, modified quadrupole and octupole deflectors were examined through simulation analysis by selecting an ultraminiaturized microcolumn with the Einzel lens eliminated. The modified deflectors were designed changing the size of each electrode of the conventional Si octupole deflector. The variations of the scan field and electric field strength were studied by changing the size of active electrodes to which the deflection voltage was to be applied. The scan field increased linearly with increasing deflection voltage. The scan field of the quadrupole deflector and the electric field strength at the center were calculated to be approximately 1.3 ~ 2.0 times larger than those of the octupole deflector depending on the electrode size.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.52-61
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• 2023

We designed a novel ultra-miniaturized microcolumn structure having an stigmator to significantly improve throughput per unit time, which is the biggest disadvantage of microcolumns. We adopted the structure of the stigmator in the form of an electrostatic octupole electrode, and used an electrostatic quadrupole deflector with a relatively simple structure considering the increase in wiring due to the introduction of the stigmator. We have dramatically reduced the effect of astigmatism that occurs when the electron beam probe is scanned to the periphery of the target by introducing the stigmator between the control electrode and the deflector. As our numerical analysis simulation results, the field of view obtained as a result of this study is about 46.3% improved compared to our previous study, and the electron beam probe size of less than 10 nm was achieved in the entire field of view.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.29-37
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• 2021

A 7 nm technology node using extreme ultraviolet lithography with a wavelength of 13.5 nm has been recently developed and applied to the semiconductor manufacturing process. Furthermore, the development of sub-3 nm technology nodes continues to be required. In this study, design factors of an electrostatic deflector for an ultra-miniaturized microcolumn system that can realize an electron wavelength of below 1.23 nm with an acceleration voltage of above 1 eV were investigated using a three-dimensional simulator. Particularly, the optimal design of the electrostatic octupole floating deflector was derived by optimizing the design elements and improving the driving method of the 1 keV low energy ultra-miniaturized microcolumn deflector. As a result, the entire wide field of view greater than 330 ㎛ at a working distance of 4 mm was realized with an ultra-high-resolution electron beam spot smaller than 10 nm. The results of this study are expected to be a basis technology for realizing a wafer-scale multi-array microcolumn system, which is expected to innovatively improve the throughput per unit time, which is the biggest drawback of electron beam lithography.