• 한국재료학회지
• /
• 제15권8호
• /
• pp.543-547
• /
• 2005

Organic electroluminescence devices were made from 1,4-bis-(9-anthrylvinyl)benzene (AVB) and 1,4-bis-(9-aminoanthryl)benzene (AAB) anthracene derivatives. Device structure was ITO/AVB/PANI(EB)/Al (multi-layer device) and ITO/AAB:DCM/Al(single-layer device). In these devices, AVB, polyaniline(emeraldine base) (PANI(EB)) and AAB were used as the emitting material. 4-(dicyanomethylene)-2-methyl-6-p-(dimethylamino)styryl-4H -pyran(DCM) was used as red fluorescent dopant. We studied change of fluorescence wavelength with concentration of DCM doped in AAB. The ionization potential (IP) and optical band gap (Eg) were measured by cyclic voltammetry and UV-visible spectrum. We compared with difference of emitting wavelength between photoluminescence and electroluminescence spectrum. In case of the multi-layer device, PANI and AVB EL spectra have similar wave pattern to each PL spectrum and when PAM and AVB were used at the same time, and multi-layer device showed that a balanced recombination and radiation kom PANI and AVB. In case of the single-layer device, with the increase of DCM concentration, the blue emission decreases and red emission increases. This indicates that DCM was excited by the energy transfer from AAB to DCM or the direct recombination at the dopant sites due to carrier trapping, or both. The device with $1.0wt\%$ DCM concentration gave white light.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.33-33
• /
• 2010

Electrical properties of organic light-emitting diodes (OLEDs) were simulated by S.co's program. The OLEDs have stable operating parameters, high luminance, and high efficiency in simulation. The AF stands for amorphous fluoropolymer in simulation, and it was used as a hole-injection layer. In the five structure of OLEDs, an AF layer is sandwiched between the hole-transport layer and the ITO layer to increase the external quantum efficiency. By considering organic light-emitting diodes using an optimal energy gap of AF, it could contribute to the improvement of the efficiency of the device in the simulation.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.349-350
• /
• 2008

In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD) /2,9-Dimethy 1-4,7-diphenyl-1,10-phenanthroline (BCP)/tris (8-hydroxyquinoline)aluminum$(Alq_3)$/Al device, we studied the efficiency improvement of organic light-emitting diodes due to thickness variation of BCP materials used for a electron breaking layer. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm, respectively under a base pressure of $5\times10^{-6}$Torr using a thermal evaporation. The TPD and $Alq_3$ layer were evaporated to be at a deposition rate of 2.0 A/s. The BCP was evaporated to be at a deposition of 1.0 A/s. When the thickness of BCP increased from 5 to 30 nm, we found that the luminous efficiency and the external quantum efficiency is superior to the others when the thickness of BCP is 20 nm. Compared to the ones from the devices made without BCP, the luminous efficiency and the external quantum efficiency was improved by 57 %, 70%, respectively.

• 한국전기전자재료학회논문지
• /
• 제30권2호
• /
• pp.91-95
• /
• 2017

We were designed the hole transport layer of the new composite skeleton structure having a high charge mobility and thermal stability. In this paper, a hole transport layer material based on thiophene molecular structure capable of hole mobility characteristics and high triplet energy was designed and synthesized. The structures and properties of the synthesized compounds were characterized by NMR, fluorescence spectroscopy and energy band gap. As a result of NMR measurement, it was confirmed that when analyzing the integrated type with the position where the measured peak is displayed, it agrees with the structure of hole transport materials. The emission characteristics of the hole transport layer material showed absorption characteristics at 412 nm and 426 nm, respectively, and exhibited emission characteristics in the range of 469 nm and 516 nm.

• 대한기계학회논문집 C: 기술과 교육
• /
• 제1권2호
• /
• pp.187-192
• /
• 2013

노즐을 이용한 인쇄 기법은 주로 전자 소자의 봉지를 위한 접착제의 인쇄분야에 적용되어 왔다. 노즐 인쇄를 통한 기능성 물질의 필름 형성은 커다란 도전이 될 수 있다. 본 논문에서는 노즐을 이용한 유기 잉크의 인쇄 특성을 실험을 통하여 알아보았다. 본 연구의 노즐 인쇄 실험에서 패턴을 형성하기 위한 잉크는 유기 발광 물질인 TAPC를 사용하였다. 인쇄된 패턴 폭은 잉크 공급 유량의 증가와 기판의 온도의 상승에 따라 증가하였다. 또한 인쇄된 패턴은 건조 후 커피링 형상을 나타내었다.

• 한국응용과학기술학회지
• /
• 제30권1호
• /
• pp.160-165
• /
• 2013

유기전기발광 소자에서 천연색을 구현하기 위해서는 적색, 녹색, 청색 발광물질이 필요하다. 그러나 적색과 녹색의 발광 물질에 대한 연구는 매우 활발하나 청색의 물질에 대한 연구가 미흡한 것은 높은 발광 에너지 때문으로 보인다. 본 연구는 발광 효율이 높으며 열적 안정성이 좋은 화합물을 합성하려는 것으로 carbazole로 치환된 anthracene 화합물 합성에 관한 것이다. Tert-butyl 기로 치환된 carbazole에 전기 발광 성질과 열적 안정도가 좋은 anthracene을 직접 결합시킴으로써 정공전달 특성을 갖는 작용기와 전자전달 특성을 갖는 작용기 간의 거리에 대한 연구를 시작하고자 하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.234.2-234.2
• /
• 2014

Organic light emitting diode (OLED) is considered as the next generation flat panel displays due to its advantages of low power consumption, fast response time, broad viewing angle and flexibility. For the flexible application, it is essential to develop thin film encapsulation (TFE) to protect oxidation of organic materials from oxidative species such as oxygen and water vapor [1]. In many TFE research, the inorganic film by atomic layer deposition (ALD) process demonstrated a good barrier property. However, extremely low throughput of ALD process is considered as a major weakness for industrial application. Recently, there has been developed a high throughput ALD, called 'spatial ALD' [2]. In spatial ALD, the precursors and reactant gases are supplied continuously in same chamber, but they are separated physically using a purge gas streams to prevent mixing of the precursors and reactant gases. In this study, the $Al_2O_3$ thin film was deposited by spatial ALD process. We characterized various process variables in the spatial ALD such as temperature, scanning speed, and chemical compositions. Water vapor transmission rate (WVTR) was determined by calcium resistance test and less than $10-^3g/m^2{\cdot}day$ was achieved. The samples were analyzed by x-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscope (FE-SEM).

• 반도체디스플레이기술학회지
• /
• 제16권1호
• /
• pp.1-5
• /
• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Thin layer of encapsulation film is required to preserve transparency yet protecting materials in it. Atomic layer deposition(ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. $Al_2O_3$ or $Al_2O_3/TiO_2/Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films. $Al_2O_3/TiO_2/Al_2O_3$ multilayer and 1.5 dyad layer of $Al_2O_3/polymer/Al_2O_3$ deposited by ALD was measured to have water vapor transmittance rate(WVTR) well below the detection limit($5.0{\times}10^{-5}g/m^2day$) of MOCON Aquatran 2 equipment.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.182-183
• /
• 2008

We fabricated a pentacene thin film transistor with Poly-vinylalcohol (PVA) as a dielectric. And we used Poly(9-vinylcarbazole) (PVK) as a buffer layer to improve the electrical characteristics. PVK is a material used often host material for OLED device, as it has good film forming properties, large HOMO-LUMO(highest occupied molecular orbital-lowest unoccupied molecular orbital) bandgap. The performance of a OTFT device with PVA gate dielectric was improved by using the PVK. Field effect mobility, threshold voltage, and on-off current ratio of device with PVK layer were about 0.6 $cm^2$/Vs, -17V, and $5\times10^5$, respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.425-425
• /
• 2008

The transparent conducting oxides(TCOs) are widely used as electrodes for most flat panel display devices(FPDs), electrodes in solar cells and organic light emitting diodes(OLED). Among them, indium oxide materials are mostly used due to its high electrical conductivity and a high transmittance in the visible spectrum. The present study reports on a study of the electrical and optical properties of IGZO thin films prepared on glass and PET substrates by the combinational magnetron sputtering. We use the targets of IZO and Ga2O3 for the deposition process. In some case the deposition process is coupled with the End-Hall ion-beam treatment onto the substrates before the sputtering. In addition we control the deposition rate to optimize the film quality and to minimize the surface roughness. Then we investigate the effects of the Ar gas pressure and RF power during the sputtering process upon the electrical, optical and morphological properties of thin films. The properties of prepared IGZO thin films have been analyzed by using the XRD, AFM, a-step, 4-point probe, and UV spectrophotometer.