• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.190-191
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• 2006

In this paper, a method to assess the reliability of an insulating spacer used in gas insulated switchgear by electrical accelerated lifetime test is represented. And a test plan to assure the expected lifetime with 90 % confidence level is also included.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.236-236
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• 2010

P-type의 단결정, 다결정, UMG 기판을 이용하여 phosphorus툴 확산시킨 후 열처리한 external gettering 방식으로 실리콘 내부에 있는 불순물을 제거하였고, 기판의 lifetime 변화를 $\mu$-PCD를 이용하여 측정하였다. phosphorus를 $850^{\circ}C$에서 기판 내부로 20분 확산시킨 후 기판의 온도와 시간을 변화시키면서 gettering 공정을 시행하였다. 에미터층으로 인해 기판의 bulk lifetime이 부정확해 지는 것을 방지하기 위해서 NaOH를 이용하여 에미터층을 제거한 후 $\mu$-PCD를 이용하여 lifetime을 측정하였다. 또한 기판의 표면효과를 최소화하기 위해서 lifetime 측정전에 iodine을 이용하여 표면 passivation을 하였다.

• Journal of Applied Reliability
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• v.10 no.4
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• pp.279-297
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• 2010

AQS(Air Quality Control System) is the important part of a car air conditioning system. This device intercepts automatically the influx of harmful waste gas. In this paper reliability assessment criteria for AQS are established in terms of quality certification test and lifetime test. The former quality certification test comprises general performance test and environmental test. Items which pass the test undergo lifetime test which guarantees the extent of mean lifetime with certain confidence.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.11
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• pp.1978-1981
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• 2007

Axial magnetic field was applied into the hollow anode of plasma torch for the purpose of extension of electrode lifetime. The average arc voltage increased because the arc column became longer, the arc voltage ripple frequency became low. The steady state of arc voltage was removed by applied magnetic filed. The lifetime of electrode was 60 times longer than operation without magnetic field.

• Journal of Applied Reliability
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• v.9 no.3
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• pp.233-248
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• 2009

PAM(Power Amplifier Module) is the important part of a mobile phone transmitter. It amplifies the strength of signal transmitting from a mobile phone to base stations enough to resist noise or interference. In this paper reliability assessment criteria for the PAM are established in terms of quality certification test and lifetime test. The former quality certification test comprises general performance test and environmental test. Items which pass the test undergo lifetime test which guarantees the extent of mean lifetime with certain confidence.

• Journal of IKEEE
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• v.27 no.4
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• pp.556-560
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• 2023

In this study, the impact of Nitrogen implantation process on deep-level defects and lifetime in 4H-SiC Epi surfaces was comparatively analyzed. Deep Level Transient Spectroscopy (DLTS) and Time Resolved Photoluminescence (TR-PL) were employed to measure deep-level defects and carrier lifetime. As-grown Schottky Barrier Diodes (SBDs) exhibited energy levels at 0.16 eV, 0.67 eV, and 1.54 eV, while for implantation SBD, defects at 0.15 eV were observed. This indicates a reduction in defects associated with energy levels Z_1/2 and EH_6/7, known as lifetime killers, as impurities from nitrogen implantation replace titanium and carbon vacancies.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.63.1-63.1
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• 2011

To analyze the phenomenon of corrosion in the PV module, we experimented damp heat test at $85^{\circ}C$/85% relative humidity(RH) and $65^{\circ}C$/85% RH for 2,000 hours, respectively. We used 30 mini-modules designed of 6inch one cell. Despite of 2,000 hours test, measured $P_{max}$ is not reached failure which is defined less than 80% compared to initial $P_{max}$. Therefore, we calculate proper curve fitting over 2,000 hours. Data less than 80% $P_{max}$ is found and B10 lifetime is calculated by the number of failure specimens and weibull distribution. Using B10 lifetime that the point of failure rate 10% and Peck's model, the predictable equation of lifetime was derived under temperature and humidity condition.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.623-624
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• 2004

The coating and estimation of gas and moisture barriers on polymer and glass substrates are receiving very much attention in passivation of organic light emitting devices (OLEDs). In this study, the encapsulation and lifetime measurement techniques of OLEDs were presented. The degradation mechanisms of bare and encapsulated OLEDs were investigated by the visual lifetime measurement (VLM) system with the parameters such as a pixel luminance(L), a luminance rms roughness(dL), a brightness area ratio(R), an edge degradation depth(D), etc.

• Nuclear Engineering and Technology
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• v.31 no.4
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• pp.408-422
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• 1999

To reduce the fast neutron fluence which deteriorates the RPV integrity, additional shields were assumed to be installed at the outer core structures of the Kori Unit 1 reactor, and its reduction effects were examined. Full scope Monte Carlo simulation with MCNP4A code was made to estimate the fast neutron fluence at the RPV. An optimized design option was found from various choices in geometry and material for shield structure. It was expected that magnitude of fast neutron fluence would be reduced by 39% at the circumferential weld of the RPV, resulting in extension of plant lifetime by 4.6 EFPYs based on the criterion of PTS requirement It was investigated that the nuclear characteristics and thermal hydraulic factors at the internal core were only negligibly influenced by the installation of additional shield structure.

• IEMEK Journal of Embedded Systems and Applications
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• v.11 no.4
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• pp.209-218
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• 2016

This paper proposes a new lifetime aware buffer mapping method of a synchronous dataflow (SDF) graph on a hybrid memory system with DRAM and PRAM. Since the number of write operations on PRAM is limited, the number of written samples on PRAM is minimized to maximize the lifetime of PRAM. We improve the utilization of DRAM by mapping more buffers on DRAM through buffer sharing. The problem is formulated formally and solved by an optimal approach of an answer set programming. In experiment, the buffer mapping method with buffer sharing improves the PRAM lifetime by 63%.