• Title/Summary/Keyword: OELD

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Light-emitting property of the EL device with the thickness ratio of the HTL.ETL (HTL/ETL 두께 비율에 따른 EL 소자의 발광 특성)

  • 손철호;여철호;박정일;장선주;박종화;이영종;정홍배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.170-173
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    • 2000
  • In this study, we have investigated the light-emitting property of the EL device with the thickness ratio of the HTL/ETL, which was 500$\AA$:500$\AA$, 400$\AA$:600$\AA$, 600$\AA$:400$\AA$. The ALq$_3$ was used for the ETL. We have studied the relation of voltage, contrase, efficiency for current density. Emission was observed above 10mA/$\textrm{cm}^2$ and luminance was measured to be 1030cd/$m^2$ at a current density of 100mA/$\textrm{cm}^2$ in 500$\AA$/500$\AA$ sample. A luminance of over 2500cd/$m^2$ was also observed after the final fabrication process in 500$\AA$/500$\AA$ sample

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A Study on the Fabrication and Characteristic Analysis of Multiheterostructure White Organic Light Emitting Device (다층구조 배색 유기발전소자의 제작 및 특성 분석에 관한 연구)

  • 노병규;강명구;오환술
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.5
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    • pp.429-434
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    • 2002
  • In this paper, multiheterostructure white organic light-emitting device was fabricated by vacuum evaporation. The structure of white organic light-emitting device is ITO/CuPc/TPD/DPBi:DPA/$Alq_3/Alq_3$:DCJTB/BCT/$Alq_3$/Ca/Al. Three primary colors are implemented with DPVBi, Alq$_3$and DCJTB. The maximum EL wavelength of the fabricated white organic light-emitting device is 647nm. And the CIE coordinate is (0.33, 0.33) at 13 V. In the fabrication of white organic light-emitting devices with DCJTB, $Alq_3$, DPVBi, the EL spectrum has two peaks at 492nm, 647nm. Two peaks appeared because the blue light is combined with green light. The maximum wavelength of red light is not changed with applied voltage. After voltage applied, for the first time, the electrons met the holes in the red emission layer and emitted red light. And then the electrons moved to the green emission layer, and blue emission layer continuously. Finally, when all of the emission layer activated, the white light is emitted.

Synthesis and Characteristics of Diphosphine-digold complexes as Light-Emitting Materials (발광 재료용 다이포스핀-다이골드 착물의 합성과 특성 연구)

  • Kim, Jun-Ho;Sohn, Byung-Chung;Ha, Yun-Kyoung
    • Journal of the Korean Applied Science and Technology
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    • v.19 no.2
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    • pp.103-107
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    • 2002
  • Diphosphine dinuclear gold(I) complexes were synthesized from the reaction of bridged diphosphines and gold ions. As a bridged diphosphine, 1,2-bis(diphenylphosphino)metbane (dppm) or 1,1'-Bis(diphenylphosphino) ferrocene (dppf) was introduced. As anionic ligands, CI was first coordinated to Au, resulting in (diphosphine)$(AuCl)_{2}$. Then, the ligand, SPh, was substituted for Cl in the chloride complex to give (diphosphine)$(AuSPh)_{2}$. As a result, three digold complexes, (dppm)$(AuCl)_{2}$. (I), (dppf)$(AuCl)_{2}$. (II), and (dppf)$(AuSPh_{2}$. (III) were prepared in this study. The thermal properties were investigated at first hand to confirm that the gold complexes were in fact formed. The digold complexes were decomposed above $200^{\circ}C$ while the ligand, dppm or dppf, melts under $180^{\circ}C$ The photoluminescence (PL) spectra of the spin-coated thin films showed the maximum peak at 590, 595, and 540nm for the complex, I, II, and III, respectively. These complexes were found to give the orange color phosphorescence. Therefore, these digold complexes can be candidates for orange-red phosphorescent materials in organic electroluminescent devices (OELD). Further studies on application of the complexes as a dopant in an emitting layer are in progress in our laboratory.

Studies on the Optical and the Electrical Characterization of Organic Electroluminescence Devices of Europium Complex Fabricated with PVD(Physical Vopor Deposition) Technique (진공 증착법에 의하여 제작한 Europium complex 유기 박막 전기발광소자의 광학적.전기적 특성에 관한 연구.)

  • Lee, Myeong-Ho;Lee, Han-Seong;Kim, Yeong-Gwan;Kim, Jeong-Su
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.285-295
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    • 1999
  • Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multi-color emission, and low operation voltage. An approach to realize such device characteristics is to use active layers of lanthanide complexes with their inherent extremely sharp emission bands in stead of commonly known organic dyes. In general, organic molecular compounds show emission due to their $\pi$-$\pi*$ transitions resulting in luminescence bandwidths of about 80 to 100nm. Spin statistic estimations lead to an internal quantum efficiency of dye-based EL devices limited to 25%. On the contrary, the fluorescence of lanthanide complexes is based on an intramolecular energy transfer from the triplet of the organic ligand to the 4f energy states of the ion. Therefore, theoretical internal quantum efficiency is principally not limited. In this study, Powders of TPD, $Eu(TTA)_3(phen) and AlQ_3$ in a boat were subsequently heated to their sublimation temperatures to obtain the growth rates of 0.2~0.3nm/s. Organic electrolumnescent devices(OELD) with a structure of $glass substrate/ITO/Eu(TTA)_3(phen)/AI, glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AI and glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AIQ_3AI$ structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and Tris(8-hydroxyquinoline)Aluminum$(AlQ_3)$ as an electron transporting layer. Electroluminescent(EL) and current density-voltage(J-V) characteristics of these OELDs with various thickness of $Eu(TTA)_3(phen)$ layer were investigated. The triple-layer structure devices show the red EL spectrum at the wavelength of 613nm, which is almost the same as the photoluminescent(PL) spectrum of $Eu(TTA)_3(phen)$.It was found from the J-V characteristics of these devices that the current density is not dependent on the applied field, but on the electric field.

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