Light-emitting property of the EL device with the thickness ratio of the HTL.ETL

HTL/ETL 두께 비율에 따른 EL 소자의 발광 특성

  • 손철호 (광운대학교 전자,정보통신공학부 전자재료공학과) ;
  • 여철호 (광운대학교 전자,정보통신공학부 전자재료공학과) ;
  • 박정일 (광운대학교 전자,정보통신공학부 전자재료공학과) ;
  • 장선주 (광운대학교 전자,정보통신공학부 전자재료공학과) ;
  • 박종화 (광운대학교 전자,정보통신공학부 전자재료공학과) ;
  • 이영종 (여주대학 전자공학과) ;
  • 정홍배 (광운대학교 전자,정보통신공학부 전자재료공학과)
  • Published : 2000.11.01

Abstract

In this study, we have investigated the light-emitting property of the EL device with the thickness ratio of the HTL/ETL, which was 500$\AA$:500$\AA$, 400$\AA$:600$\AA$, 600$\AA$:400$\AA$. The ALq$_3$ was used for the ETL. We have studied the relation of voltage, contrase, efficiency for current density. Emission was observed above 10mA/$\textrm{cm}^2$ and luminance was measured to be 1030cd/$m^2$ at a current density of 100mA/$\textrm{cm}^2$ in 500$\AA$/500$\AA$ sample. A luminance of over 2500cd/$m^2$ was also observed after the final fabrication process in 500$\AA$/500$\AA$ sample

Keywords