• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.291.1-291.1
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• 2016

Graphene by one of the two-dimensional (2D) materials has been focused on electronic applications due to its ultrahigh carrier mobility, outstanding thermal conductivity and superior optical properties. Although graphene has many remarkable properties, graphene devices have low on/off current ratio due to its zero bandgap. Despite considerable efforts to open its bandgap, it's hard to obtain appropriate improvements. To solve this problem, heterojunction barristor was proposed based on graphene. Mostly, this heterojunction barristor is made by transition metal dichalcogenides (TMDs), such as molybdenum disulfide ($MoS_2$) and tungsten diselenide ($WSe_2$), which have extremely thickness scalability of TMDs. The heterojunction barristor has the advantage of controlling graphene's Fermi level by applying gate bias, resulting in barrier height modulation between graphene interface and semiconductor. However, charged impurities between graphene and $SiO_2$ cause unexpected p-type doping of graphene. The graphene's Fermi level modulation is expected to be reduced due to this p-doping effect. Charged impurities make carrier mobility in graphene reduced and modulation of graphene's Fermi level limited. In this paper, we investigated theoretically and experimentally a relevance between graphene's Fermi level and p-type doping. Theoretically, when Fermi level is placed at the Dirac point, larger graphene's Fermi level modulation was calculated between -20 V and +20 V of $V_{GS}$. On the contrary, graphene's Fermi level modulation was 0.11 eV when Fermi level is far away from the Dirac point in the same range. Then, we produced two types heterojunction barristors which made by p-type doped graphene and graphene treated 2.4% APTES, respectively. On/off current ratio (32-fold) of graphene treated 2.4% APTES was improved in comparison with p-type doped graphene.

• The Journal of the Petrological Society of Korea
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• v.18 no.1
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• pp.31-47
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• 2009

We performed petrological, geochemical, and geochronological study for the Pyeonghae granite gneiss and the Hada leuco-granite gneiss intruding the Paleoproterozoic meta-sedimentary rocks (pyeonghae formation and Wonnam formation) of the Pyeonghae area located in northeastem part of the Yeongnam (Sobaeksan) massif. The Pyeonghae granite gneiss generally has higher abundance of mafic minerals (biotite etc.), and posesses higher ${Fe_2}{O_3}^t$, MgO, CaO, $TiO_2$, $P_{2}O_{5}$ contents but lower $SiO_2$ and $K_{2}O$ contents than the Hada leuco-granite gneiss which tends to have slightly high $Al_{2}O_{3}$ and $Na_{2}O$ contents and slightly high larger negative Eu anomalies. However both gneisses reveal very similar REE concentrations and chondrite-normalized patterns and apparently show differentiation trend affected by crystallization of biotite, plagioclase, apatite and sphene. Their peraluminous and calc-alkaline chemistry suggests tectonic environment of volcanic arc. SHRIMP Zircon U-Pb age determinations yield upper intercept ages of $1990{\pm}23\;Ma$ ($2{\sigma}$) and $1939{\pm}41\;Ma$ ($2{\sigma}$), and weighted mean $^{207}Pb/^{206}Pb$ ages of $1982{\pm}6.3\;Ma$ ($2{\sigma}$) and $1959{\pm}28\;Ma$ ($2{\sigma}$) for the Pyeonghae granite gneiss and the Hada leuco-granite gneiss respectively, showing overlapping ages within the error. Our study suggests that the Precambrian granitoids in this area intruded contemporaneously with the Buncheon granite gneissin volcanic arc environment.

• Nuclear Engineering and Technology
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• v.56 no.7
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• pp.2711-2717
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• 2024

The current work aims to fabricate metal oxide-doped (PbO, Fe₂O₃, MgO, and Al₂O₃, each of which boasts a purity of 99%) zinc barium borate glasses through the melt quenching technique at the 1000 ℃ melting temperature. The results showed that adding 5 mol.% of metal oxides PbO, Fe₂O₃, Al₂O₃, and MgO increases the density of the zinc barium borate glasses. Additionally, the fabricated glasses' mechanical properties were determined based on the Makishima-Mackenzie model, which proved that the highest mechanical properties were achieved for glasses doped with Al₂O₃ compounds. The mechanical moduli for the glasses doped with Al₂O₃ reach 80.95 GPa (Young), 59.90 GPa (bulk), 31.75 GPa (shear), and 102.23 GPa (longitudinal). Additionally, the Al₂O₃-doped glasses' microhardness reaches 4.77 GPa. Moreover, estimation of the fabricated glasses' gamma-ray shielding capacity utilized Monte Carlo simulation. The highest linear attenuation coefficients are 29.132, 19.906, 19.243, and 18.923 cm^-1 obtained at 0.033 MeV for glasses dopped by PbO, Fe₂O₃, MgO, and Al₂O₃, respectively. Therefore, glasses doped with 5 mol.% of PbO have high gamma-ray shielding capacities followed by glasses doped by Fe₂O₃.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.167-167
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• 2010

반도체는 도핑하지 않으면 대부분 n형을 나타내는 것에 반하여 GaSb는 p형을 보이는 반도체로서, 그 근원은 명확하게 규명되어 있지 않은 상태이다. GaSb의 p형 불순물인 Be은 Ga과 치환 ([$Be_{Ga}$])되므로, p형 전도의 근원으로 추정되는 잔존결함인 [$Ga_{Sb}$]와 그 복합체인 [$Ga_{Sb}-Sb_{Ga}$]와 높은 상관관계를 가질 것으로 예측된다. 본 연구에서는 Be을 도핑한 GaSb:Be 에피층을 MBE 방법으로 성장하여, PL 스펙트럼과 Hall 효과 분석을 통하여 p형 전도의 근원을 조사하였다. 도핑하지 않은 u-GaSb는 DA (deep acceptor)와 함께 A 준위를 나타낸 반면, p-GaSb:Be의 PL 스펙트럼은 Be 도핑농도가 증가함에 따라 FWHM가 줄어들면서 점차 높은 에너지 영역으로 변위하지만 농도가 가장 높은 시료에서는 PL의 FWHM가 증가하면서 에너지는 감소함이 관측되었는데, 이것은 A 피크와 Sb 관련 피크가 경쟁적으로 중첩되어 나타난 현상으로 분석된다. Hall 효과 결과는 유효 전하밀도의 증가에 따라 이동도는 감소하는 전형적인 의존성을 나타내었으며, u-GaSb의 Hall 이동도가 p-GaSb:Be의 값보다 작은 것은 u-GaSb에 잔존하는 DA에 의한 산란 때문으로 해석된다. Gaussian 형태로 분해하여 얻은 A ([$Ga_{Sb}$])와 DA ([$Ga_{Sb}-Sb_{Ga}$]) 및 Be 관련 피크로부터 특정 도핑농도 ($1.2{\times}10^{17}cm^{-3}$)의 시료를 제외한 모든 p-GaSb:Be에는 A 피크가 중첩되고 A와 Be 준위 중간에 Be과의 복합체인 중간상태(intermediate state)인 [$Be^*$]가 존재함이 관측되었는데, 특정 도핑농도에서는 [$Be_{Ga}$]이 우세하지만 더 이상 농도가 증가하면 [$Be_{Ga}$] 준위의 강도는 오히려 감소함을 관측할 수 있었다. 이것은 적정 이상의 Be을 도핑할 경우, A ([$Be_{Ga}$])와 $Be^*([Be_{Ga}-Ga_Sb}])$가 형성 ($A[Ga_{Sb}]+Be{\rightarrow}Be^*[Be_{Ga}-Ga_{Sb}]+[Be_{Ga}]$)됨을 보여 주는 중요한 결과인 것으로 분석된다. A, [Be], [$Be^*$] PL 피크 에너지는 각각 779, 787, 794 meV (오차범위 ${\pm}3\;meV$)이고, [$Be_{Ga}$]의 활성화 에너지는 ($23{\pm}3\;meV$) (20 K)임을 밝혔다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.12
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• pp.8-13
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• 2001

Cerium oxide ($CeO_2$) thin film has been proposed as a buffer layer between the ferroelectric thin film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS) structures for ferroelectric random access memory (FRAM) applications. In this study, $CeO_2$ thin films were etched with $Cl_2$/Ar gas mixture in an inductively coupled plasma (ICP). Etch properties were measured for different gas mixing ratio of $Cl_2$($Cl_2$+Ar) while the other process conditions were fixed at RF power (600 W), dc bias voltage (-200 V), and chamber pressure (15 mTorr). The highest etch rate of $CeO_2$ thin film was 230 ${\AA}$/min and the selectivity of $CeO_2$ to $YMnO_3$ was 1.83 at $Cl_2$($Cl_2$+Ar gas mixing ratio of 0.2. The surface reaction of the etched $CeO_2$ thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is a Ce-Cl bonding by chemical reaction between Ce and Cl. The results of secondary ion mass spectrometer (SIMS) analysis were compared with the results of XPS analysis and the Ce-Cl bonding was monitored at 176.15 (a.m.u). These results confirm that Ce atoms of $CeO_2$ thin films react with chlorine and a compound such as CeCl remains on the surface of etched $CeO_2$ thin films. These products can be removed by Ar ion bombardment.

• The Korean Society of Law and Medicine
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• v.10 no.1
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• pp.363-388
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• 2009

i) Das deutsche Arzneimittelgesetz(AMG) vom 24. 8. 1976 hat neben der Einf$\ddot{u}$hrung des Zulassungsverfahren f$\ddot{u}$r Arzneimittel anstelle des bisherigen Registrieungsverfahrens vor allem auf dem Gebiet des Haftungsrechts eine bedeutende Neuerung gebracht: die Gef$\ddot{a}$hrdungshaftung f$\ddot{u}$r den pharmazeutischen Unternehmer. Gem$\ddot{a}{\ss}$ $\S$84 AMG ist der pharmazeutische Unternehmer zum Schadensersatz verpflichtet. wenn infolge der Anwndung eines Arzneimittels ein Mensch get$\ddot{o}$tet oder K$\ddot{o}$rper oder die Gesundheit eines Menschen nicht unerheblich verletzt wird. Pharmazeutischer Unternehmer ist, wer das Arzneimittel unter seinem Namen in Verkehr bringt. ii) Die Ersatzpflicht des pharmazeutisches Unternehmers besteht jedoch nur in zwei F$\ddot{a}$llen: a) Das Arzneimittel hat bei bestimmungsgemm$\ddot{a}{\ss}$em Gebrauch sch$\ddot{a}$dliche Wirkungen, die $\ddot{u}$ber ein nach den Erkenntnissen der medizinischen Wissenschaft vertretbares Ma$\ss$ hinausgehen($\S$84 Abs. 1 Satz 2 Nr. 1 AMG). b) Der Schaden ist infolge einer nicht den Erkenntnissen der medizinischen Wissenschaft entsprechenden Kennzeichnung, Fachinformarion oder Gebrauchsinformation eingetreten($\S$84 Abs. 1 Satz 2 Nr. 2 AMG). iii) Mit dem 2. Schadensersatzrechts$\ddot{a}$nderungsgesetz ist, dem Konzept von $\S$6 Umwelthaftungsgesetz folgend, eine gesetzliche Kausalit$\ddot{a}$tsvermutung eingef$\ddot{u}$hrt worden. Ist das angewendete Arzneimittel nach den Gegebenheiten des Einzelfalls geeignet, den entstandenen Schaden zu verursachen, so soll vermutet werden, da$\ss$ das Arzneimittel auch den konkreten Schaden beim Anwender verursacht hat($\S$84 II AMG). Der pharmazeutische Unternehmer hat dann diese Vermutung zu wiederlegen. iv) Gem$\ddot{a}{\ss}$ $\S$94 AMG hat der pharmazeutische Unternehmer f$\ddot{a}$r seine Haftpflicht Deckungsvorsorge entweder durch eine Hafpflichtversicherung oder eine Freistellungs- oder Gew$\ddot{a}$hrleistungsverpflichtung eines Inl$\ddot{a}$ndischen Kreditinstituts zu treffen. v) Aber koreanisches Arzneimittelgesetz hat keine Gef$\ddot{a}$hrdungshaftung f$\ddot{u}$r Arzneimittelschaden. Es gibt nur Gefahrdungshaftung des Hersteller aufgrund des Produkthaftungsgesetzes, das auf das Arzneimittel Anwendung findet. Ich glaube, in Zukuft soll koreanisches AMG die Gef$\ddot{a}$hrdungshaftung f$\ddot{u}$r den pharmazeutischen Unternehmer regeln.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2005.05a
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• pp.207-209
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• 2005

현재 고정원에서 상용화 촉매로서 사용되는 V$_{2}$O$_{5}$/TiO$_{2}$계 촉매는 고온 영역에서 최적 활성반응을 보이나 NH$_{3}$의 산화반응으로 인해 NO$_{X}$의 제거효율을 낮추는 원인과 가열설비의 추가적인 설치에 따른 초기 투자비, 운전비용 상승 및 촉매 수명 단축 등의 경제적, 기술적인 문제점을 나타내고 있다. 본 연구에서는 저온 영역에서 높은 활성반응을 나타내는 촉매기술의 SCR적용시 배출가스 온도의 100$^{\circ}C$ 감소에 따른 동력비의 절감과 촉매 수명 연장, 경제적, 기술적인 문제점을 해결할 수 있을 것으로 사료된다.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.817-820
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• 1988

Thermal Electet of the Zinc Oxide varistor has been studied in the temperature range of -130${\sim}200[^{\circ}C]$ and the electric field of 6[kV/m]. It appears that there are four peaks of thermally stimulated current; ${\alpha},\;{\beta},\;{\gamma}$ and ${\delta}$ spectra appearing at the temperature range of 160, 130, 20 and $-30[^{\circ}C]$, respectively. It seems that the origins of ${\alpha},\;{\beta},\;{\gamma}$ and ${\delta}$ peaks are associated with the depolarization of donor ions in the depletion layer, the detrapping of trapped electron in the surface, the detrapping of trapped electron in the donor level and the detrapping of trapped electron between grain and intergranular, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.35-41
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• 2000

The frequency dependence of the pyroelectric characteristics of $LiTaO_3$ have been investigated by using the dynamic method. In the frequency range between 2 and 1000 Hz, they are measured in both the regimes of pyroelectric current ($R_L=1M{\Omega}$) and pyrelectric voltage ($R_L=17.3G{\Omega}$), which can be selected by adjusting the value of the load resistance. Pyroelectric coefficient depending on the voltage response in the regime of pyroelectric current shows the maximum value of $1.56{\times}10^{-8}C/cm^2{\cdot}K$ at 40 Hz. The maximum values of figures of merits for the voltage response and for the detectivity are measured as $10.8{\times}10^{-11}C{\cdot}cm/J$ and $13{\times}10^{-7}C{\cdot}cm/J$, respectively. The voltage responsivity depending on the voltage response in the regime of pyroelectrci voltage shows the maximum value of 488 V/W at 2 Hz. Noise equivalent power and detectivity shows the minimum value of $3.95{\times}10^{-10}W/{\sqrt}Hz$ and maximum value of $5.6{\times}10^8cm{\cdot}{\sqrt}Hz/W$ at 40 Hz, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.10
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• pp.271-279
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• 2016

This study examines the properties of high-fluidity concrete after adding copper slag as a mineral admixture. For this purpose, the replacement ratio of cement to copper slag was varied to 0, 10, 20, 30, 40, and 50%. A slump flow test, reach time slump flow of 500 mm, and a U-Box and O-lot test were conducted on the fresh concrete. The compressive strength of the hardened concrete was determined at 3, 7, 14 and 28 days. According to the test results, the workability, compaction, and compressive strength of the high-fluidity concrete increased when replacing 30% of the cement with copper slag. These parameters decreased for all material ages with more than 30% copper slag, which was the optimal mixture ratio.