• The Journal of the Korea Contents Association
• /
• v.13 no.7
• /
• pp.51-61
• /
• 2013

This Paper aims to explore the key factors that drive box-office success in Korean, Chinese and Japanese film market regarding to the storytelling of the movies. At first, I researched the top 20 movies at the box office of Korean, Chinese and Japanese film market from 2007 to 2011.And then I tried to figure out the key factors for the success and the differences among those countries. Usually the purpose of the movie planning in Korea is for the domestic market. In the profit structure of Korean film industry, it is really hard to focus on the overseas film market. In Chinese film market, recently it has been changed a lot especially film genre. The movie liked to watch is melodrama, romantic comedy movie It is being changed to the comedy genre from the war and martial arts movie. And it is emphasized the importance of the scenario in the film production. They want to watch their lives like a real and dreams at the movie and the movie tries to show this trend. In Japanese film market, they made movies in which TV drama, animation and cartoon according to the O.S.M.U. strategy. The movies like to watch are the blockbuster movies, horror movies, thriller movies and melodrama. Comparing with Korea and China, they like movies which show more fantastic and fairy tale imagination.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.02a
• /
• pp.77-77
• /
• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• The Korean Journal of Pesticide Science
• /
• v.2 no.1
• /
• pp.46-52
• /
• 1998

The hydrolysis rate of insecticidal buprofezin(IUPAC : tert-butylimino-3-isopropyl-5-phenylperhydro-1,3,5-thiadiazin-4-one) in the range of pH 2.0 and 12.0 have been examined in 15%(v/v) aqueous dioxane at $45^{\circ}C$. The hydrolysis mechanism of buprofezin is proposed from the pH-effect, solvent effect(${\ell}{\gg}m$), thermodynamic parameter(${\Delta}H^{\neq}$=11.12 $Kcal{\cdot}mol^{-1}$ &, ${\Delta}S^{\neq}=5.0e.u.$), rate equation and hydrolysis product, l-isopropyl-3-phenyl urea. General acid catalyzed hydrolysis and specific acid catalyzed($k_{H3O+}$) hydrolysis through $A-S_{E}2$ and A-2(or $A_{AC}2$) reaction mechanism with orbital-control reaction proceed below pH 8.0 and above pH 9.0, the nucleophilic addition-elimination, $Ad_{N}-E$ mechanism via tetrahedral($sp^{3}$) intermediate is initiation by general base catalyzed($k_{H2O}$) reaction. Buprofezin was more stable in alkaline ($k=10^{-8}sec.^{-1}$) than acid solutions from the sigmoid pH-rate profile. And the half-life($t=\frac{1}{2}$) of hydrolysis reaction in neutral aqueous solution(pH 7.0) at $45^{\circ}C$ was about 3 months.

• Journal of Environmental Health Sciences
• /
• v.11 no.2
• /
• pp.17-27
• /
• 1985

The objectives of this study is to examine efficiency of swinery wastewater treatment by trickling filters' pilot plant. The results of this study are as follows: 1. The characteristics of sample. The BOD$_5$ was from 2,450 to 2,880mg/l, COD(KMnO$_4$ acid method) was from 910 to 1,064mg/l, and SS was from 920 to 990mg/l. The pH of influent was from 7.3 to 7.6, and the temperature of water was from 17.0$\circ$C to 22.5$\circ$C. 2. For experiment by recirculation, the BODs removal efficiency is 65.2% at recirculation ratio (r)=0, and 70.7% at r=1. The ramoval efficiency of this study is higher than NRC formula of U.S.A.. The recirculation is not significant effect on removal efficiency. 3. For experiment by hydraulic load, the BOD$_5$ removal rate decreased from 73.1% at $3.1m^3/m^2\cdot d$ to 65.3% at $9.2m^3/m^2\cdot d$. The design formula of this study which shows the removal rate of soluble BOD is $Le/Li =10^{-0.24} D/Q^{0.24}$ (Q: hydraulic load, D: depth of filter). 4. For experiment by organic load, the BOD$_5$ removal rate is increased from 70.2% at $0.77kg/m^3\cdot d$ to 75.4% at $4.28kg/m^3\cdot d$. We can obtain the straight line y=0.749 x (y: removed BOD, x :applied BOD) by the least squares method. 5. We can know that trickling filters is strong with the hydraulic load and the organic matter shock load. Here, we can judge that trickling filters is a good method for the treatment of swinery wastewater which containing high concentrated organic matter.

• The Korean Journal of Ecology
• /
• v.18 no.1
• /
• pp.1-15
• /
• 1995

Alakline phosphatase activity (AP A) as a phosphorus deficiency measurement in flowing waters and of microhabitats (rocks, wood, leaves, and sediments) was measured and its relationship to flux of nutrients and response to rainfall events were determined for two geologically different streams in west Alabama from August to November. Results indicated water column AP A in both streams had a low correlation with levels of orthophosphate, total organic phosphorus, nitrate, ammonia, dissolved organic carbon, and discharge (r=0.075-0.583; n=g-IU. Communities on rock surfaces showed a higher AP A level than those on wood and leaves. Sediment passed through a $106{\mu}m$ sieve showed 2-9 times higher AP A level than material passed through $425{\mu}m$ sieve. The first storm after drought at Yellow Creek introduced substantial quantities of DOC (2.5 times baseflow concentrations) and $N0_3-N$ (5.8 times baseflow concentrations) which did not affect AP A significantly. The second storm at Little Schultz Creek caused minor changes in nutrient cocentrations; however $N0_3-N$ levels and AP A were drastically lower due to the dilution effect. Retention of stream water AP A at Yellow Creek and Little Schultz Creek on $0.45{\mu}m$ filter (54 and 43%, respectively) and $0.22{\mu}m$ (83 and 77% of total APA. respectively) indicated more free dissolved portion of the enzyme was present at Little Schultz Creek. Little Schultz Creek (with carbonate and with a higher productivity and biomass) showed a consistantly greater AP A activity $(132{\pm}54\;{\mu}M{\cdot}1^{-1}{\cdot}min^{-I};\;n=g)$ than Yellow Creek $(41{\pm}23\;{\mu}M{\cdot}1^{-I}{\cdot}min^{-I}$, with a sandstone substrate; n=l1, $p{\leq}O.OO1)$. Overall, a greater APA on all microhabitats and the presence of more dissolved enzyme in Little Schultz Creek during the study period may indicates it is more P deficient than Yellow Creek.

• Restorative Dentistry and Endodontics
• /
• v.14 no.2
• /
• pp.65-76
• /
• 1989

The purpose of this study was to observe the effect on the removal of dentinal smear layer and morphological changes of reduced dentin surfaces by various dentin surface conditioners. Thirty-two healthy human premolars extracted due to periodontal or orthodontic reasons were used. The teeth were cross-sectioned to expose dentin at the middle portion of the crown with diamond rotary saw. The specimens were then divided into 8 groups. The sectioned dentin surfaces in group 1 to 4 were grinded with No. 400 grit silicone abrasive paper and those in group 5 to 8 were cut with #700 carbide bur under air-water spray. The grinded or cut dentin surfaces were conditioned with 3% $H_2O$, Dentin Conditioner(GC Inter. Corp., Japan), and Scotchprep(3M Dent Prod., U.S.A) according to manufacturer's directions. All the specimens were dried in room temperature for 48 hours, and gold-coated with Eiko ion coater(Eik-engineering Co.), and observed in Hitachi S-450 Scanning electron microscope at 15-25 KV. The following results were obtained; 1. The dentin surfaces grinded with the silicon abrasive paper were rougher in texture and heavier in amount of smear layer than those cut with the carbide bur. 2. Scrubbing of 3% $H_2O_2$ was not effective in removing dentinal smear layer. 3. 20-second conditioning of Dentin Conditioner (GC Inter. Corp) resulted in the removal of a significant amount of the smear layer without removing the tubular plugs and dissolving the peritubular dentin. 4. Scotchprep removed the smear layer very effectively. But at the same time it dissolved the peritubular dentin. 5. Irrespective of the uses of the silicon carbide abrasive paper or the carbide bur the morphological changes of dentin surfaces treated with the same conditioning agents were similar.

• Korean Journal of Materials Research
• /
• v.3 no.1
• /
• pp.12-18
• /
• 1993

Abstract The effect of the film stress on the thermal stability of TiSi, films under the dielectric overcoat was investigated. TiS$i_2$ films with the sheet resistance of 1.2 ohm/sq. were produced by a solid-state reaction between sputtered Ti film and single-crystalline Si in an RTA (rapid thermal anneal) machine. Dielectric overcoats such as the USG (Undoped Silicate Glass, Si$O_2$) film and the PE-SiN(S$i_3$$N_4$) film were deposited by AP-CVD and PE-CVD, respectively, on the TiS$i_2$ film. The thermal stability of the TiSi, film was evaluated by changes in the sheet resistance, film stress and microstructure after furnace anneals at 90$0^{\circ}C$. Agglomeration of the TiSi2 film high temperatures results in the increase of sheet resistance and the decrease of tensile stress of TiSi, film. The stress level of the TiSi" PE-SiN and ~SG films at 90$0^{\circ}C$C was 1.3${\times}{10^{9}}$, 1.25 ${\times}{10^{10}}$, 2.26 ${\times}{10^{10}}$ dyne/c$m^2$ in tensile, respectively. Dielectric films deposited by CVD on TiSi, was effective on preventing agglomeration of TiSi,. The PE-SiN film mproved the thermal stability of TiSi, more effectively than the AP-CVD USG film. It is considered that agglomeration of the TiS$i_2$ film under the stress of dielectric overcoat at high temperature can be caused by a diffusional flow of atom called Nabarro-Herring microcreep.reep.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.1038-1041
• /
• 2003

In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

• Korean Journal of Computational Design and Engineering
• /
• v.12 no.1
• /
• pp.74-85
• /
• 2007

During the lifecycle of a nuclear power plant many organizations are involved in KOREA. Korea Plant Engineering Co. (KOPEC) participates in the design stage, Korea Hydraulic and Nuclear Power (KHNP) operates and manages all nuclear power plants in KOREA, Dusan Heavy Industries manufactures the main equipment, and a construction company constructs the plant. Even though each organization has a digital data management system inside and obtains a certain level of automation, data sharing among organizations is poor. KHNP gets drawing and technical specifications from KOPEC in the form of paper. It results in manual re-work of definition and there are potential errors in the process. A data warehouse based on a neutral model has been constructed in order to make an information bridge between design and O&M phases. GPM(generic product model), a data model from Hitachi, Japan is addressed and extended in this study. GPM has a similar architecture with ISO 15926 "life cycle data for process plant". The extension is oriented to nuclear power plants. This paper introduces some of implementation results: 1) 2D piping and instrument diagram (P&ID) and 3D CAD model exchanges and their visualization; 2) Interface between GPM-based data warehouse and KHNP ERP system.

• The korean journal of orthodontics
• /
• v.21 no.2 s.34
• /
• pp.287-307
• /
• 1991

This study aimed at examining speech defects of openbite patients, which were analized in terms of formant frequency for vowels and word pronunciation length for consonants. In addition, the upper and lower lip (perioral m.) activity was tested by the EMG. The tongue force was measured by the strain gauge, and the speech discrimination test was carried out. One experimental group and one control group were used for this study and they were respectively composed of six female openbite patients and six normal-occlusion females. Eight monophthongs, two fricatives and two affricatives were chosen for speech analysis. Speeches of the above-mentioned groups were recorded and then analized by the ILS/PC-1 software. Four hundred most frequently used monosyllables were also chosen for discrimination score. Openbite patients showed the following characteristics: 1. Abnormality in case of /a/, $/\varepsilon/$, /e/, /i/ $F_2$ and /e/, /a/ $F_1$. 2. Significantly elongated length in their pronunciation of /h/ and $/C^h/$ and somewhat elongated length also in their pronunciation of /s/ and /c/. 3. Significant upper lip activity according to the EMG test during pronunciation of the bilabial consonants. 4. Relatively weak tongue force according to the strain gauge measurement. 5. According to the speech discrimination test, high rate of misarticulation in case of (a) initial /p/ /s'/ and /ts'/, (b) /a/,$/\varepsilon/$,/e/,/je/,/o/, $/\phi/$,/jo/,/u/,/we/, and /i/ (c) final (equation omitted).