• Title/Summary/Keyword: O-SiAlON

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A Study on the Thermal Stability of an Al2O3/SiON Stack Structure for c-Si Solar Cell Passivation Application (결정질 실리콘 태양전지의 패시베이션 적용을 위한 Al2O3/SiON 적층구조의 열적 안정성에 대한 연구)

  • Cho, Kuk-Hyun;Chang, Hyo Sik
    • Journal of the Korean Ceramic Society
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    • v.51 no.3
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    • pp.197-200
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    • 2014
  • We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

Analysis of the Na Gettering in SiO2/PSG/SiO2/Al-1%Si and SiO2/TEOS/SiO2/Al-1%Si Multilevel Thin Films using SIMS (SIMS를 이용한 SiO2/PSG/SiO2/Al-1%Si 및 SiO2/TEOS/SiO2/Al-1%Si 적층 박막내의 Na 게터링 분석)

  • Kim, Jin Young
    • Journal of the Korean institute of surface engineering
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    • v.51 no.2
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    • pp.110-115
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    • 2018
  • The Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films was investigated using dynamic SIMS(secondary ion mass spectrometry) analysis. DC magnetron sputter, APCVD and PECVD techniques were utilized for the deposition of Al-1%Si thin films, $SiO_2/PSG/SiO_2$ and $SiO_2/TEOS/SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of Na, Al, Si and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze chemical states of Si and O elements in $SiO_2$ passivation layers. Na peaks were observed throughout the $PSG/SiO_2$ and $TEOS/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the interfaces. Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering.

Fabrication of $Al_2O_3/SiC$ Composite Through Oxidation of SiC (SiC의 산화에 의한 $Al_2O_3/SiC$ 복합체의 제조)

  • 김경환;이홍림;이형민;홍기곤
    • Journal of the Korean Ceramic Society
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    • v.34 no.5
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    • pp.535-543
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    • 1997
  • The surface of SiC particles were partially oxidized to produce SiO2 layers on the SiC particles to prepare Al2O3/SiC composite by formation of mullite bonds between the grains of Al2O3 and SiC during sintering at 1$600^{\circ}C$. This process is considered to enable the sintering of Al2O3/SiC composite at lower temperature and also to relieve the stress, produced by thermal expansion mismatch between Al2O3 and SiC. In fact, Al2O3/SiC composite prepared by oxidation of SiC was observed to be more effectively sintered and densified at lower temperature. Maximum density, flexural strength and microhardness were obtained with 5.65 vol% of mullite content in Al2O3/SiC composite.

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Comparative Study of Texture of Al/Ti Thin Films Deposited on Low Dielectric Polymer and SiO$_2$Substrates (저 유전상수 폴리머와 SiO$_2$기판위에 형성된 Al/Ti박막의 우선방위 비교)

  • 유세훈;김영호
    • Journal of the Microelectronics and Packaging Society
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    • v.7 no.2
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    • pp.37-42
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    • 2000
  • The comparative study of texture of Al/Ti thin films deposited on low-dielectric polymer and $SiO_2$substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and $SiO_2$by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and $SiO_2$substrates was characterized by cross-sectional transmission electron microscopy (TEM). Both the $\theta$-2$\theta$ method and rocking curve measurement suggest that Al/Ti thin films deposited on $SiO_2$have stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM revealed that grains of Ti films on $SiO_2$substrates had grown perpendicular to the substrate, while the grains of Ti alms on SiLK substrates were formed randomly. The lower degree of (111) texture of Al thin films on low-k polymer was due to Ti underlayer.

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Study on the Properties of $B_2O_3$-$SiO_2$and $Al_2O_3$-$SiO_2$Coating Films by the Sol-Gel Method (Sol-Gel법으로 제조한 $B_2O_3$-$SiO_2$$Al_2O_3$-$SiO_2$ 박막의 특성에 관한 연구)

  • 황규석;김병훈;최석진
    • Journal of the Korean Ceramic Society
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    • v.27 no.5
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    • pp.583-588
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    • 1990
  • Glass films in the binary system B2O3-SiO2 and Al2O3-SiO2 were prepared on soda-lime-silica slide glass by the dip-coating technique from TEOS and boric acid or aluminum nitrate. Thickness of the films varying with viscosity and withdrawal speed were measured and effect of composition and firing temperature on the properties such as transmittance and refractive index were investigated. nM2O3.(100-n)SiO2(M=B or Al) films containing up to 20mol% B2O3 and 40mol% Al2O3 were transparent. Maximum transmittance at visible range were obtained for the sample containing 15mol% Ba2O3 and 32.5mol% Al2O3 and heat-treated at 50$0^{\circ}C$, respectively. Refractive index of the film containing 15mol% B2O3 was mininum in the B2O3-SiO2 binary system and minimal refractive index was appeared at the film containing 32.5mol% Al2O3. In IP spectra, addition of B2O3 were increased absorption peak intensity of B-O and Si-O-B bond and addition of Al2O3 were decreased absorption peak intensity of Si-O bond, respectively.

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The Effect of Nitride Coating on SiC Platelet in $Al_2O_3/SiC$ Hybrid-Composite ($Al_2O_3/SiC$ Hybrid-Composite에서 SiC에 질화물 코팅의 영향)

  • 이수영;임경호;전병세
    • Journal of the Korean Ceramic Society
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    • v.34 no.4
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    • pp.406-412
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    • 1997
  • Al2O3/SiC hybrid-composite has been fabricated by the conventional powder process. The addition of $\alpha$-Al2O3 as seed particles in the transformation of ${\gamma}$-Al2O3 to $\alpha$-Al2O3 provided a homogeneity of the microstructure. The grain growth of Al2O3 are significantly surpressed by the addition of nano-size SiC particles. Dislocation were produced due to the difference of thermal expansion coefficient between Al2O3 and SiC and piled up on SiC particles in Al2O3 matrix, resulting in transgranular fracture. The high fracture strength of the composite was contributed to the grain refinement and the transgranular fracture mode. The addition of SiC platelets to Al2O3/SiC nano-composite decreased the fracture strength, but increased the fracture toughness. Coated SiC platelets with nitrides such as BN and Si3N4 enhanced fracture toughness much more than non-coated SiC platelets by enhancing crack deflection.

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A Study on the Transparent Glass-Ceramics On Al2O3-SiO2 System (투명 결정화 유리에 관한 연구 - $Al_2O_3-SiO_2$계에 관하여)

  • 박용완;김용욱
    • Journal of the Korean Ceramic Society
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    • v.29 no.3
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    • pp.223-231
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    • 1992
  • CaO and ZnO were added to Al2O3-SiO2 binary system respectively as flux, then ZrO2 and TiO2 were applied as nucleating agent to these CaO-Al2O3-SiO2 and ZnO-Al2O3-SiO2 ternary system glass. The transparency could not be kept in CaO-Al2O3-SiO2 system glass, whereas the transparent glass-ceramics were prepared in ZnO-Al2O3-SiO2 system glass containing ZrO2 as the nucleating agent. At this time the optimum heating temperatures for the nucleation and the crystal growth were 78$0^{\circ}C$ and 97$0^{\circ}C$. The sizes of the precipitated crystals in the transparent glass-ceramics were below 0.1 ${\mu}{\textrm}{m}$, and their light transmissibilities were more than 80%.

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Preparation of β-SiAlON Powder by Combustion Reaction in the System of Si-Al-SiO2-NH4F(β-Si3N4) (Si-Al-SiO2-NH4F(β-Si3N4)계에서 연소반응에 의한 β-SiAlON분말의 제조)

  • Min, Hyun-Hong;Shin, Chang-Yun;Won, Chang-Whan
    • Journal of the Korean Ceramic Society
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    • v.43 no.10 s.293
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    • pp.595-600
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    • 2006
  • The preparation of $\beta$-SiAlON powder by SHS in the system of $Si-Al-SiO_2-NH_4F(\beta-Si_3N_4)$ was investigated in this study. In the preparation of SiAlON powder, the effect of gas pressure, compositions such as Si, $NH_4F$, \beta-Si_3N_4$ and additive in mixture on the reactivity were investigated. At 50 atm of the initial inert gas pressure in reactor, the optimum composition for the preparation of pure $\beta$-SiAlON was $3Si+Al+2SiO_2+NH_4F$. The $\beta$-SiAlON powder synthesized in this condition was a single phase $\beta$-SiAlON with a rod like morphology.

Study on the R-curve Behaviour in $Al_2O_3-ZrO_2-SiC$ Whisker Comosite ($Al_2O_3-ZrO_2-SiC$ Whisker 복합재료에서의 R-curve 거동에 관한 연구)

  • Kim, Hyun-Ha;Park, Hyun;Choi,Sung-Churl
    • Journal of the Korean Ceramic Society
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    • v.30 no.9
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    • pp.731-739
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    • 1993
  • R-curve measurements were performed on Al2O3(matrix)-ZrO2-SiC whisker composite and Al2O3-ZrO2, Al2O3-SiC whisker composites in the favor of comparing the effect of ZrO2 and SiC whisker, as a second phase, to Al2O3 matrix. Al2O3-SiC whisker and Al2O3-ZrO2-SiC whisker were fabricated by hot pressing at 1$700^{\circ}C$, 15MPa and Al2O3-ZrO2 by pressureless sintering at 1$600^{\circ}C$. A controlled flaw/strength technique was utilized to determine fracture resistance as a function of crack extension and R-curve behaviour was determined from the relationship which is KR=K0(Δa)m. R-curveresults were KR=6.173$\times$Δa0.031 for Al2O3-ZrO2, KR=18.796$\times$Δa0.172 for Al2O3-SiC whisker and KR=11.96$\times$Δa0.110 for Al2O3-ZrO2-SiC whisker composite. From the analysis of R-curve and expeirmental data above three composites, it is found that R-curve behaviour of Al2O3-ZrO2-SiC whisker composite was dominated initially by the strengthening effect of ZrO2 and after, some extended crack were influenced by the effect of SiC whisker. Analysis of SEM and X-ray data revealed that whisker bridging in the crack wake and whisker pull-out mechanisms were the main mechanism for the R-curve behaviour.

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Influences of the Molar Ratio of $Mo/MoO_3$ on Characteristics of $MoSi_2-Al_2O_3$ composites by SHS Methods (연소합성법에 의한 $MoSi_2-Al_2O_3$ 복합재료의 특성에 미치는 $Mo/MoO_3$ 몰비의 영향)

  • 장윤식;이윤복;김용백;김인술;박흥채;오기동
    • Journal of the Korean Ceramic Society
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    • v.33 no.11
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    • pp.1209-1216
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    • 1996
  • MoSi2-Al2O3 composites were prepared by thermal explosion mode of self-propagating high temperature syn-thesis (SHS) using element powders of MoO3 Mo Si and Al. The combustion products of MoSi2 which have 10, 20, 30 and 40 wt% Al2O3 showed the molten state in the range of Mo to MoO3 6:1-9.5:1, 2:1-8:1, 1:1-5:1, and 1:1-3:1 (molar ratio) respectively. The combustion products which made least seperation the molten phase from the slag phase were in Mo/MoO3=9, 5:1, 8:1, 5:1 and 3:1 (molar ratio) respectively. Particles size of MoSi2 and Al2O3 in the combustion product were decreased as the molar ratio of Mo to MoO3 increase. By XRD analysis only MoSi2 and $\alpha$-Al2O3 peaks were identified in the combusion products, In case of MoSi2 containing 20wt% Al2O3 5.1wt% Al existed into MoSi2 grains and 30.7wt% Si and 7.7wt% Mo existed into Al2O3 grains. The relative density of MoSi2 containing 10, 20, 30 and 40 wt% Al2O3 were 82.7, 85.2, and 81.9% respectively. The fracture strength of MoSi2-Al2O3 composites increased with increasing Al2O3 and that of MoSi2-20wt% Al2O3 composite was 195 MPa.

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