• Journal of Environmental Science International
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• v.19 no.2
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• pp.229-236
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• 2010

As air pollution has emerged as one of the most pressing urban environmental concerns, many studies have investigated the influence of air pollutants(ex: $O^3$, $NO^2$, $SO^2$, Acid rain, etc.) on roadside trees and urban grove. In Korea, population density started to increase since the industrialization. Since dense population aggravates our living conditions, it's very important for us to preserve and keep a lively and refreshing nature in order to live with green nature in harmony under the current artificial environment-dominating world. In metropolitan cities, the production of pollutants increases in proportion to population growth. The vehicle exhaust gas and air pollutants from cooling and heating systems have been the major causes of acid rain. Furthermore, tire particles which are naturally produced by tire wearing on roads and other toxic substances in exhaust gas have caused a problem in human health directly and indirectly. In fact, a lot of studies have analyzed air pollution, roadside trees and plants in Korea. However, they are mostly limited to covering the influence of air pollution on the growth of plants. No paper has clearly explained why air pollution-resistant or-vulnerable species has shown different reactions yet. Even though a lot of urban roadside trees have died or stopped to grow from time to time, this kind of problem has not been properly examined. This paper is aimed to comparatively analyze physio-ecological characteristic such as photosynthesis, chlorophyll contents, soil volume water figure out their relationship with environmental factors against the expanding roadside trees in Cheong-ju, and provide basic data for management of roadside trees and elaboration of urban environment preservation policies.

• THE JOURNAL OF KOREAN ORIENTAL ONCOLOGY
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• v.9 no.1
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• pp.89-97
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• 2003

Recently, the occurrence and death rates of cancer have increased rapidly. In oriental medicine, the tongue gives some kind of special physiological information on human body. Oriental medical doctors have used information about the color, degree of wetness and shape of the patient's tongue to determine patient's disease and body condition. This fact leads us that the tongue image is one of the most important clinical data for helping doctor's decision making. It also has significant meaning to cancer patients related with traditional theory of oriental medicine. In diagnosis and treatment of cancer, tongue diagnosis can give some prognosis and change o cancer. It also detect the sign of early stage cancer, but it cannot diagnose the kind of cancer and/or benign or malignant. Nowadays BioTechnology(BT) has developed rapidly, but there are a lot of limits(economy, accuracy, clinical significance, etc). Tongue diagnosis is very economic and practical way of diagnose and has a lot of possibility of development. The need for doctors and it also helps the development of tongue diagnosis related with cancer.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.39 no.2
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• pp.351-359
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• 2019

In order to improve the problem of parking which is getting worse day by day, the municipality carries out a survey on the actual situation of the parking lot supply and demand periodically according to the related law. However, in the existing evaluation method, the parking demand that occurs under the condition that the demand is suppressed by the parking supply and regulation due to the limit of the survey method is investigated. In addition, the analysis is conducted only for the present year, and prediction and analysis of future parking problems are limited. Therefore, we propose a method to evaluate the status of parking supply and demand, which is differentiated to improve the problem of the existing evaluation method. As a result, comparing the existing method with the improved method, it can be seen that the improved evaluation method can be useful for establishing the long-term parking policy for the improvement of parking problems.

• Journal of the Architectural Institute of Korea Planning & Design
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• v.34 no.7
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• pp.99-106
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• 2018

The purpose of this study is to examine adaptation types of urban tissue in Ipjeong-dong area, Seoul. Ipjeong-dong area has urban tissue those were made during Joseon dynasty and this is remaining even in the present time. This area was originally urban hanok residential districts till late 1950s. However, it has changed into machinery manufacture business area after demolition of Cheonggyechon shantytown. After several workshops and stores moved in this area, manufacturer and merchants required for more spaces due to lack of room for machinery. To place more workshops in the block, lot alteration were happened and accessibility to workshops inside the block were required. Adaptive road network which is main form of adaptative urban tissue were made to adapt in this kind of poor urban condition. To research about adaptive urban tissue making, distribution were explored and comparison tasks between various cadastral map of 1940, 1964, 1970s and 2017 were conducted. From these tasks, certain types of adaptive urban tissues and characteristics of these elements were found. First of all, forms of adaptive road depend on the surrounded environment. Connecting internal building corridor with original road system is categorized as Type A. Altering a portion of the buildings to make adaptive roads is categorized as Type B. Second, there were two types of formation of adaptive road. Type 1 is for adaptive road which is independent gesture from original road network. Type 2 is for adaptive road which is altering the form of original road network by lengthening or connecting two different dead-end roads.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1553-1555
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• 1999

Recently, $SrBi_2Ta_2O_9$(SBT) and $Pb(ZrTi)O_3$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) showing higher read/write speed, lower power consumption and nonvolartility. Bi-layered SBT thin film has appeared as the most prominent fatigue free and low operation voltage for use in nonvolatile memory. To highly integrate FRAM, SBT thin film should be etched. A lot of papers on SBT thin film and its characteristics have been studied. However, there are few reports about SBT thin film due to difficulty of etching. In order to investigate properties of etching of SBT thin film, SBT thin film was etched in $CF_4$/Ar gas plasma using magnetically enhanced inductively coupled plasma (MEICP) system. When $CF_4/(CF_4+Ar)$ is 0.1, etch rate of SBT thin film was $3300{\AA}/min$, and etch rate of Pt was $2495{\AA}/min$. Selectivities of SBT to Pt. $SiO_2$ and photoresist(PR) were 1.35, 0.6 and 0.89, respectively. With increasing $CF_4$ gas, etch rate of SBT thin film and $P_t$ decreased.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.4
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• pp.617-622
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• 2018

In industries such as automobiles and semiconductors, a lot of components are produced using PLCs based on an automatic production system. Therefore, an educational platform is needed to provide training in the use of PLCs in the industrial sites. Conventional educational systems, in which PLCs are employed to control sensors and actuators, have been continuously developed. However, these systems present their circuits only in 2D on the screen, which makes it difficult to understand them during the learning process. To overcome these disadvantages, we propose an educational V-Factory system capable of providing PLC training using virtual reality. In addition, thousands of sensors and actuators can be controlled by the V-Factory system through the proposed virtual I/O driver. The motion of the automatic production system can be visualized using virtual reality.

• Journal of architectural history
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• v.19 no.2
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• pp.117-132
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• 2010

The Great south gate of Seoul Castle, Sung-Rye-Mun, the east gate of Seoul Castle, Hung-In-Ji-Mun, the south gate of Hwa-Sung Castle, Pal-Dal-Mun and the north gate of Hwa-Sung Castle, Jang-An-Mun are typical significant castle gate of Chosun Dynasty. They have a lot in common with exterior. Additionally there are also something common in dimensions. At first, the arch dimensions of lower story is very similar and the columns of upper story are the regular intervals. Purpose of this study is to confirm similarities above mentioned were intended on purpose and if then what was the reason. The results of this study were described separately as follows. 1. The widths of the arches were based on each 16Cheok and 18Cheok. 2. The heights of the arches followed less strictly rule than the widths. 3. The widths of the arches, 16Cheok was same size as width of middle-size road (中路, Jung-Ro) inside the Castle town in Chosun Dynasty. 4. The widths of the arches, 16Cheok was the standard size of exit went through castle and then the standard size of road arrived at one's destination. 5. The widths of the arches had an effect on the intervals between the columns of the upper story. Finally we recognized that in Chos${\u{o}}$n Dynasty the widths of the gate arches in Seoul castle and Hwa-Sung castle had relevance to the city planning largely and widths of the gate arches had an effect on the intervals between the columns of the upper story partly.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.254.2-254.2
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• 2014

The Transmission Fourier Transform Infrared spectroscopy (FTIR) of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000~2300 cm-1. It indicated that the existence of many silicon phases and defect sources in the matrix of the SiOx films. The total hysteresis width is the sum of the flat band voltage shift (${\Delta}VFB$) due to electron and hole charging. At the range voltage sweep of ${\pm}15V$, the ${\Delta}VFB$ values increase of 0.57 V, 1.71 V, and 13.56 V with 1/2, 2/1, and 6/1 samples, respectively. When we increase the gas ratio of SiH4/N2O, a lot of defects appeared in charge storage layer, more electrons and holes are charged and the memory window also increases. The best retention are obtained at sample with the ratio SiH4/N2O=6/1 with 82.31% (3.49V) after 103s and 70.75% after 10 years. The high charge storage in 6/1 device could arise from the large amount of silicon phases and defect sources in the storage material with SiOx material. Therefore, in the programming/erasing (P/E) process, the Si-rich SiOx charge-trapping layer with SiH4/N2O gas flow ratio=6/1 easily grasps electrons and holds them, and hence, increases the P/E speed and the memory window. This is very useful for a trapping layer, especially in the low-voltage operation of non-volatile memory devices.

• Journal of the Korean Magnetics Society
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• v.4 no.4
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• pp.326-334
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• 1994

This paper describes the fabrication of the hydrophilic magnetic fluid with high viscosity and its application to oil seal apparatus used with the Nd-permanent magnet. The results are as follows. 1) The ultrafine magnetite particles under the size of $100\;{\AA}$ are first coated by the oleic acid ion and again adsorbed by the hydrophilic D. B. S. ion, and there by hydrophilic magnetic fluid with high viscosity could be made by dispersing them into the ethylene glycol. 2) In development of the oil seal apparatus using magnetic fluid and Nd-permanent magnet, the viscosity and magnetic susceptibility show high when the $Fe_{3}O_{4}$ content is over 50%(g/cc) in the fluid, so that such properties could improve highly the capability of oil seal. 3) The maximum of the resisting pressure of the oil seal using the ethylene glycol base magnetic fluid and the Nd-permanent magnet, is about $50\;g/\textrm{cm}^2$, under the condition of this experiment. Therefore the oil seal may not be suitable for the ship engine and the driving part of the automobile, and thus it needs a lot further complementary reserch. However, it is quite favourable for such an oil seal apparatus as speed reducer under the condition of atmospheric pressure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.575-580
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• 2007

A 16 Mb 1T1C FeRAM device was integrated with BLT capacitors. But a lot of cells were failed randomly during the measuring the bit-line signal distribution of each cell. The reason was revealed that the grain size and orientation of the BLT thin film were severely non-uniform. And the grain size and orientation were severely affected by the process conditions of post heat treatment, especially nucleation step. The optimized annealing temperature at the nucleation step was $560^{\circ}C$. The microstructure of the BLT thin film was also varied by the annealing time at the step. The longer process time showed the finer grain size. Therefore, the uniformity of the grain size and orientation could be improved by changing the process conditions of the nucleation step. The FeRAM device without random bit-fail cell was successfully fabricated with the optimized BLT capacitor and the sensing margin in bit-line signal distribution of it was about 340 mV.