• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.683-689
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• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

• Journal of the Korean Ceramic Society
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• v.35 no.4
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• pp.347-354
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• 1998

Densification and grain growth behaviors of ITO ceramics were investigated as a function of TiO2 ad-ditions. TiO2 addition led to inhibition of the grain growth and promotion of the densification of ITO ceram-ics. From the microstructure observation it was found that the crack-like voids which were formed in pure ITO specimens decreased with increase of TiO2 additon. The grain growth exponent(n) was measur-ed to be 4 for pure ITO 3 for TiO2-doped ITO specimens respectively. It was supposed that the grain boun-dary migration of pure ITO ceramics was controlled by the pores which were moved by surface diffusion. On the contrary the grain boundary migration of TiO2-doped ITO specimens was depressed by solute drag effect. The activation energies for grain growth were measured to be 1013 kJ/mol for pure ITO ceramics and 460kJ/mol for TiO2-doped ITO specimens respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.50.1-50.1
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• 2009

Transparent conductive oxides (TCOs) play an important role in thin-film solar cells in terms of low cost and performance improvement. Al-doped ZnO (AZO) is a very promising material for thin-film solar cellfabrication because of the wide availability of its constituent raw materials and its low cost. In this study, AZO films were prepared by low pressurechemical vapor deposition (LPCVD) using trimethylaluminum (TMA), diethylzinc(DEZ), and water vapor. In order to improve the absorbance of light, atypical surface texturing method is wet etching of front electrode using chemical solution. Alternatively, LPCVD can create a rough surface during deposition. This "self-texturing" is a very useful technique, which can eliminate additional chemical texturing process. The introduction of a TMA doping source has a strong influence on resistivity and the diffusion of light in a wide wavelength range.The haze factor of AZO up to a value of 43 % at 600 nm was achieved without an additional surface texturing process by simple TMA doping. The use of AZO TCO resulted in energy conversion efficiencies of 7.7 % when it was applied to thep-i-n a-Si:H thin film solar cell, which was comparable to commercially available fluorine doped tin oxide ($SnO_2$:F).

• 연구논문집
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• s.29
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• pp.141-149
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• 1999

Brazing of Fe-Cr-Al alloy was carried out at $1200^{\circ}C$ in vacuum furnace using nickel-based filler metals : BNi-5 powder(Ni-Cr-Si-Fe base alloy} and MBF-50 foil (Ni-Cr-Si-B). The effect of boron content on the stability of oxide scale on the brazed joint was investigated by means of cyclic oxidation test performed at $1050^{\circ}C$ and $1200^{\circ}C$. Apparently, the joints brazed with MBF-50 containing boron showed relatively stable oxidation rates compared to boron-free BNi-5 at both temperatures. However, it was considered that the slower weight loss of MBF-50 brazed specimen wasn’t resulted from the low oxidation rate but from the spallation of oxide layer. The oxide layer consisted of thick spinel oxide on the surface and $Al_2 O_3$ internal oxide layer along the interface between mother alloy and braze, the mother alloy was also eroded seriously by the formation of spinel oxides such as $FeCr_2 O_4$ and $NiCr_2 O_4$ on the surface, likely to be induced by the change of oxide forming mechanism due to diffusion of boron from the braze. On the contrary, the joint brazed with BNi-5 showed the good oxidation resistance during the cyclic oxidation test. It seems that the oxidation can be retarded by the formation of stable $Al_2 O_3$ layer at the surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.9-9
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• 2009

1 wt % Ga-dope ZnO (ZnO:Ga) thin films with n-type semiconducting behavior were grown on c-sapphire substrates by radio frequency magnetron sputtering at various growth temperatures. The room temperature grown ZnO:Ga film showed the faint preferred orientation behavior along the c-axis with small domain size and high density of stacking faults, despite limited surface diffusion of the deposited atoms. The increase in the growth temperature in the range between $300\sim550^{\circ}C$ led to the granular shape of epitaxial ZnO:Ga films due to not enough thermal energy and large lattice mismatch. The growth temperature above $550^{\circ}C$ induced the quite flat surface and the simultaneous improvement of electrical carrier concentration and carrier mobility, $6.3\;\times\;10^{18}/cm^3$ and $27\;cm^2/Vs$, respectively. In addition, the increase in the grain size and the decrease in the dislocation density were observed in the high temperature grown films. The low-temperature photoluminescence of the ZnO:Ga films grown below $450^{\circ}C$ showed the redshift of deep-level emission, which was due to the transition from $Zn_j$ to $O_i$ level.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.445.1-445.1
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• 2014

Dye-sensitized solar cells (DSSCs) have been widely investigated as a next-generation solar cell because of their simple structure and low manufacturing cost. The $TiO_2$ film with thickness of $8{\sim}10{\mu}m$, which consists of nanoparticles, acts as both a scaffold with a high surface-to-volume ratio for the dye loading and a pathway to remove the electrons. However, charge carriers have to move across many particle boundaries by a hopping mechanism. So, one dimensional nanostructures such as nanotubes, nanorods and nanowires should improve charge carrier transportation by providing a facile direct electron pathway and lowering the diffusion resistance. However, the efficiencies of DSSCs using one dimensional nanostructures are less than the $TiO_2$ nanoparticle-based DSSCs. In this work, the patterned $TiO_2$ film with thickness of $3{\mu}m$ was deposited using photolithography process to decrease of electron pathway and increase of surface area and transmittance of $TiO_2$ films. Properties of the patterned $TiO_2$ films were investigated by various analysis method such as X-ray diffraction, field emission scanning electron microscopy (FESEM) and UV-visible spectrophotometer.

• Journal of the Korean Ceramic Society
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• v.33 no.7
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• pp.793-801
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• 1996

The effect of catalysts which was catalyzed by acid($HNO_3$) and base ($NH_4OH$) or not on the surface microst-ructures and consequent dielectric characteristics of the $PbTiO_3$ thin films prepared by sol-gel method were investigated. The result indicated that bse catalyst promoted the phase transformation of perovskite phase while acid catalyst was found to produce most uniform surface microstructure and improved dielectric properties However degradation of properties due to secondary phase formation and non-uniform microstructure at high annealing temperature (>75$0^{\circ}C$) by rapid diffusion of lead was unavoidable in any case as long as $Si_{(100)}$ \ $SiO_2$ \Pt substrate used.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.995-1002
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• 2010

This study investigated the effect of process temperature on the alloying process during synthesis of $Sm_2Fe_{17}$ powder from ball-milled samarium oxide ($Sm_2O_3$) powders and a solid reducing agent of calcium hydrides ($CaH_2$) using iron nanopowder (n-Fe powder) by a reduction-diffusion (R-D) process. The $n-Fe-Sm_2O_3-CaH_2$ mixed powders were subjected to heat treatment at $850{\sim}1100^{\circ}C$ in $Ar-H_2$ for 5 h. It was found that the iron nanopowders in the mixed powders are sintered below $850^{\circ}C$ during the R-D process and the $SmH_2$ is synthesized by a reduced Sm that combines with $H_2$ around $850^{\circ}C$. The results showed that $SmH_2$ is able to separate Sm and $H_2$ respectively depending on an increase in process temperature, and the formed $Sm_2Fe_{17}$ phase on the surface of the sintered Fe nanopowder agglomerated at temperatures of $950{\sim}1100^{\circ}C$ in this study. The formation of the $Sm_2Fe_{17}$ layer is mainly due to the diffusion reaction of Sm atoms into the sintered Fe nanopowder, which agglomerates above $950^{\circ}C$. We concluded that nanoscale $Sm_2Fe_{17}$ powder can be synthesized by controlling the diffusion depth using well-dispersed Fe nanopowders.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.88-91
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• 2003

Electromagnetic interference shielding and near-infrared cutoff filters for plasma display panel application were designed and fabricated by radio frequency magnetron sputtering. Three types of the filters were prepared: the basic structure of type A consisted of [$TiO_2$ Ti Ag $TiO_2$]; type B, of [$TiO_2$ ITO Ag $TiO_2$]; type C, of [$TiO_2$ ITO Ag ITO $TiO_2$]. Ti and ITO layers deposited on Ag layers were employed as barriers to prevent the oxidation and the diffusion of Ag film into the adjacent oxide layers. Optical, electrical, chemical, and structural properties were investigated, and the result shows that the filters with the ITO barrier layers provided an enhancement in transmittance in the visible owing to a lower absorption of ITO layers than Ti layers. Type C filter showed better optical and electrical performances and smoother surface roughness than Type B and C filters: the average sheet resistance was as low as 1.51 $\Omega\Box$ (where $\square$ stands for a square film), the peak transmittance in the visible was as high as 78.2 %, and the average surface roughness was 1.48 nm.