• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.7 no.2
• /
• pp.117-127
• /
• 1996

In this paper, we present the bit error performances of 4PSK and 8PSK signal transmission schemes using Maximal Ratio Combining diversity reception for m-distribution and Rician fading channels. The suitability of modeling a Rician fading environment by a properly chosen m-distribution model is examined. Using the error performance of the derived equation has been evaluated and shown in figures as a function of fading index (m), Rician factor (K), diversity branches number (L) and E($E_b/N_o$). It is found that MRC (Maximal Ratio Combining) diversity technique is very efficient for reducing the effects of fading, And then, diversity benifit much large as depth of fading becomes deeper but more decreases as many diversity branchs. Also the results show that the error performance corresponds as much as fading becomes weak and increases with the number diversty branches.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.348-348
• /
• 2012

CTF 메모리 소자는 높은 집적도와 낮은 구동전압과 CMOS 공정을 그대로 사용할 수 있고 비례 축소가 용이하다는 장점을 가지기 때문에 많은 연구가 진행되고 있다. CTF 메모리의 게이트 크기가 30 nm 이하로 작아짐에 따라 메모리 셀 간의 간섭이 매우 크게 증가하는 문제점이 있다. 이 문제점을 해결하기 위해 낸드 플래쉬 메모리 소자에서 셀 간 간섭 현상에 대한 많은 연구가 진행되고 있다. 본 연구에서는 $TaN-Al_2O_3-SiN-SiO_2-Si$ (TANOS) 플래쉬 메모리 소자에서 recess field의 모양에 따른 전기적 특성을 시뮬레이션 하였다. Recess field는 각 전하 트랩 층의 word 라인 방향에 존재하며 셀 간 간섭 효과를 줄이고 메모리 소자의 coupling ratio를 증가시키는 효과를 가지고 있다. TANOS 메모리 소자의 게이트 크기를 25 nm 에서 40 nm 로 변화하면서 round 타입의 recess field와 angular 타입의 recess field 에 대한 전기적 특성을 3차원 시뮬레이션 툴인 Sentaurus를 이용하여 시뮬레이션 하였다. Recess field를 가지지 않은 TANOS 메모리의 셀 간 간섭 효과는 게이트의 크기가 40 nm에서 25 nm 줄어들 때 많이 증가한다. 시뮬레이션된 결과에서 recess field의 모양에 상관없이 깊이가 늘어남에 따라 셀 간 간섭효과가 감소하였다. Recess field 의 깊이가 커짐에 따라 surrounding area가 늘어나 coupling ratio 가 증가하였다. Recess field 의 깊이가 증가함에 따라 프로그램 동작 시 트랩 층에 트랩 되는 전하의 수가 증가하고 recess field가 Si 기판의 표면에 가까이 위치할수록 coupling ratio, 드레인 전류 및 동작속도가 증가하였다. Recess field의 모양에 달리 하였을 때는 round 타입의 recess field를 가진 플래쉬 메모리 디바이스가 angular 타입의 recess field를 가진 소자와 비교하여 채널 표면의 잉여 전계가 감소하여 subthreshold leakage current 감소하였다. 본 연구의 시뮬레이션 결과는 수십 나노 스케일의 CTF 낸드 플래쉬 메모리 전기적 특성을 이해하는데 도움을 줄 것이다.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.4
• /
• pp.144-147
• /
• 2011

In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a $N_2/BCl_3$/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the $SiO_2$ thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

• Applied Chemistry for Engineering
• /
• v.18 no.1
• /
• pp.94-97
• /
• 2007

Carbon nanotubes and nanowires were prepared by methane pyrolysis over Pd(5)/SPK catalyst by changing oxygen molar ratio in a fixed bed flow reactor under atmospheric condition and also analyzed by SEM and TEM. When the $CH_4/O_2$ molar ratio was 1, carbons were not almost deposited on the catalyst bed support, but when it was 2, carbons were deposited as much as plugging reactor. TEM and SEM images for the deposited carbons showed a number of single-walled carbon nanotubes and carbon nanowires. The growth mechanism of carbon nanotubes produced on the catalyst surface was the tip growth mode. It should be played an important role in carbon nanotubes and nanowires produced on the catalyst bed support to formate the carbon growth velocity vectors and nuclei of ring structure of carbon nanowires. SPK carrier was $N_2$ isotherm of IV type with mesopores, and excellent in the thermal stability.

• The Journal of the Petrological Society of Korea
• /
• v.6 no.1
• /
• pp.19-33
• /
• 1997

This study reports the results about the petrography and geochemical characteristics of 10 representative volacanic rocks. The Cretaceous volcanic rocks distributed in the vicinity of the Kageo island composed of andesitic rocks, dacitic welded tuff, and rhyolitic rocks in ascending order. Sedimentary rock is the basement in the study area covered with volcanic rocks. Andesitic rocks composed of pyroclastic volcanic breccia, lithic lapilli tuff and cryptocrystallin lava-flow. Most dacitic rocks are lapilli ash-flow welded tuff. Rhyolitic rocks consists of rhyolite tuff and rhyolite lava flow. Rhyolite tuff are lithic crystal ash-flow tuff and crystal vitric ash-flow tuff with somewhat accidental fragments of andesitic rocks, but dacitic rocks. The variation of major and trace element of the volcanic rocks show that contents of $Al_2O_3$, FeO, CaO, MgO, $TiO_2$ decrease with increasing of $SiO_2$. On the basis of Variation diagrams such as $Al_2O_3$ vs. CaO, Th/Yb vs. Ta/Yb, and $Ce_N/YB_N$ vs. $Ce_N$, these rocks represent mainly differentiation trend of calc-alkaline rock series. On the discriminant diagrams such as Ba/La and La/Th ratio, Rb vs. Y + Nb, the volcanic rocks in study area belongs to high-K Orogenic suites, with abundances of trace element and ternary diagram of K, Na, Ca. According to the tectonic discriminant diagram by Wood, these rocks falls into the diestructructive continental margin. K-Ar ages of whole rocks are from andesite to rhyolite $97.0{\pm}6.8~94.5{\pm}6.6,\68.9{\pm}4.8,\61.5{\pm}4.9~60.7{\pm}4.2$ Ma, repectively. Volcanic rocks in study area show well correlation to the Yucheon Group in terms of rock age dating and geochemcial data, and derived from andesitic calc-alkaline magma that undergone low pressure fractional crystallization dominated plagioclase at <30km.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.976-980
• /
• 2001

In this study, P $b_{0.88}$(L $a_{a}$N $d_{l-a}$)$_{0.08}$(M $n_{1}$3/S $b_{2}$3/)$_{0.02}$ $Ti_{0.98}$ $O_3$system ceramics were manufactured for 20 MHz class resonator application. Electromechanical coupling factor, mechanical quality factor and dynamic range of 3rd overtone thickness vibration mode were measured as the variations of La and Nd molar ratio. Mechanical quality factor and dynamic range at $\alpha$=0.6 composition ceramics showed the highest value of 2, 691 and 52.37 dB, respectively. The tempearture coefficient of resonant frequency measured from -2$0^{\circ}C$ to 8$0^{\circ}C$ showed an excellent value of 5ppm/$^{\circ}C$ at $\alpha$ = 1 composition ceramics. ceramics.s.

• Journal of the Korean Ceramic Society
• /
• v.35 no.2
• /
• pp.185-195
• /
• 1998

This experiment carried out in order to investigate the effect of the chemical activators for acceleration of hydration the system of Fly ash-Cao The paste was consisted of 80wt% Fly ash and 20wt% CaO with 1. 3. 5wt% of 4 activators(N{{{{ alpha _2 }}S{{{{ OMICRON _4 }}, CaC{{{{ {l }_{2 } }}, NaOH, Ca(N{{{{ OMICRON _3 {)}_{2 } }} and W/S ratio of 0.42 After curing for 1, 3, 7, 14, 28 days the paste hydration was characterized by the measurement of compressive strength XRD analysis SEM observation the combined water and the reaction amount of Ca(OH)2 determination. As a result of this ex-periment all of the system which involved Na2SO4 or NaOH had a god compressive strength. In the case of 7 days curing a system which added CaCl2 showed the highest compressive strength among all especially NaOH system showed a high increase in strength as a dosage of it increased. Hydration products were different according to activatores added. Only C-S-H was observed in NaOH system. As the reaction amount of Ca(OH)2 and combined water were increased the compressive strength increased. There were few differences in the comparision of strength between ignited loss 3.1% and loss 9.3% of fly ash.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.05b
• /
• pp.106-109
• /
• 2005

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[$\AA$/min]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The capacitance characteristics had a stable value within ${\pm}4$[%] in temperature ranges of -80~+90[$^{\circ}C$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.160-161
• /
• 2005

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75$[{\AA}/min]$. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.718-721
• /
• 2004

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode$(Pt/TiN/SiO_2/Si)$ using RF sputtering method at various substrate temperature. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of $100\sim500[^{\circ}C]$. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of $-80\sim+190[^{\circ}C]$. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases.