• Title/Summary/Keyword: O:N ratio

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SiO2 보호막 증착에 따른 p-GaN의 후열처리 효과 연구

  • Park, Jin-young;Ji, Taeksoo;Lee, Jin-hong;An, Su-chang
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.05a
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    • pp.772-775
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    • 2013
  • We have grown a p-GaN film on sapphire by MOCVD and explored the post-annealing effort on the film after depositing a $2500{\AA}$ thick $SiO_2$ protective layer on it. By etching the $SiO_2$ protective film after the heat treatment, the hole concentration was measured, and compared with the data values before the heat treatment. In addition to the concentration, the hole mobility was also monitored while varying the atmospheric gas ratio of $N_2$ and $O_2$, the rapid thermal annealing temperatures ($750^{\circ}C$ and $650^{\circ}C$) and times (1 to 15 min.) In order to investigate the optical and structural properties of the film, room temperature and low temperature PL measurements were conducted.

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Canonical Correlation of 3D Visual Fatigue between Subjective and Physiological Measures

  • Won, Myeung Ju;Park, Sang In;Whang, Mincheol
    • Journal of the Ergonomics Society of Korea
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    • v.31 no.6
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    • pp.785-791
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    • 2012
  • Objective: The aim of this study was to investigate the correlation between 3D visual fatigue and physiological measures by canonical correlation analysis enabling to categorical correlation. Background: Few studies have been conducted to investigate the physiological mechanism underlying the visual fatigue caused by processing 3D information which may make the cognitive mechanism overloaded. However, even the previous studies lack validation in terms of the correlation between physiological variables and the visual fatigue. Method: 9 Female and 6 male subjects with a mean age of $22.53{\pm}2.55$ voluntarily participated in this experiment. All participants were asked to report how they felt about their health sate at after viewing 3D. In addition, Low & Hybrid measurement test(Event Related Potential, Steady-state Visual Evoked Potential) and for evaluating cognitive fatigue before and after viewing 3D were performed. The physiological signal were measured with subjective fatigue evaluation before and after in watching the 3D content. For this study suggesting categorical correlation, all measures were categorized into three sets such as included Visual Fatigue set(response time, subjective evaluation), Autonomic Nervous System set(PPG frequency, PPG amplitude, HF/LF ratio), Central Nervous System set(ERP amplitude P4, O1, O2, ERP latency P4, O1, O2, SSVEP S/N ratio P4, O1, O2). Then the correlation of three variables sets, canonical correlation analysis was conducted. Results: The results showed a significant correlation between visual fatigue and physiological measures. However, different variables of visual fatigue were highly correlated to respective HF/LF ratio and to ERP latency(O2). Conclusion: Response time was highly correlated to ERP latency(O2) while the subjective evaluation was to HF/LF ratio. Application: This study may provide the most significant variables for the quantitative evaluation of visual fatigue using HF/LF ratio and ERP latency based human performance and subjective fatigue.

Deposition and Luminescent Characterization of $Y_3Al_5O_{12}$:Ce Thin Film Phosphor

  • Kim, Joo-Won;Han, Sang-Hyuk;Kim, Young-Jin;Chung, Sung-Mook
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.657-659
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    • 2004
  • Trivalent cerium ($Ce^{3+}$) activated yttrium aluminum garnet ($Y_3Al_5O_{12}$, YAG) phosphor thin films were deposited on quartz glass substrates by rf magnetron sputtering. The effects of sputtering parameters and annealing condition on the luminescent properties were investigated. The sputtering parameters were $O_2$/Ar gas ratio, rf power, and deposition time. The films were annealed at 1200 $^{\circ}C$ for 5 hours in $N_2+$vacuum atmosphere. Polycrystalline YAG:Ce thin film phosphor could be obtained with a gas ratio of $O_2$/(Ar+$O_2$)=0.5 after post-annealing. PL spectra excited at 450 nm showed a yellow single band at 550 nm.

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Current-voltage characteristics of n-AZO/p-Si-rod heterojunction

  • Lee, Seong-Gwang;Choe, Jin-Seong;Jeong, Nan-Ju;Kim, Yun-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.338.2-338.2
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    • 2016
  • Al doped ZnO (AZO) thin films were deposited on Si substrates with rod-shaped-surface by pulsed laser deposition method (PLD). Si-rods were prepared through chemical etching. To analyze the influence on the formation of the rod structure, samples with various chemical etching conditions such as AgNO3/HF ratio, etching time, and solution temperature were prepared. The morphology of Si-rod structures were examined by FE-SEM. Fig. 1 shows a typical structure of n-AZO/p-Si-rod juncions. The fabricated n-AZO/p-Si-rod devices exhibited p-n diode current-voltage characteristics. We compared the I-V characteristics of n-AZO/p-Si-rod devices with the samples without Si-rod structure.

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Preparation of Aluminum Nitride from an Alkoxide and its Properties (알콕사이드로부터 AlN분말의 합성 및 분말 특성)

  • 이홍림;박세민;조덕호
    • Journal of the Korean Ceramic Society
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    • v.26 no.1
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    • pp.100-108
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    • 1989
  • Aluminum hydroxides were prepared by the alkoxide hydrolysis method using Al-isopropoxide as a starting material and NH4OH as a catalytic agent. When Al-isopropoxide was hydrolyzed in a H2O-NH3 system, only Al(OH)3 was obtained over all pH values. However, AlOOH was formed besides Al(OH)3 when Al-isopropoxide was hydrolyzed in a H2O-NH3-isopropyl alcohol system. The AlOOH/Al(OH)3 ratio was increased as the isopropyl alcohol content was increased. The hydroxides, Al(OH)3 and AlOOH, obtained in this study and the commerical products, $\alpha$-Al2O3 and AlOOH were subjected to the carbothermal reduction and nitridation reaction to product AlN powder, using carbon black as a reducing agent under N2 atmosphere at various temperatures. AlN was synthesized from the obtained Al(OH)3 and the commercial AlOOH at 145$0^{\circ}C$, however, synthesized from the obtained AlOOH and the commercial alpha-alumina at 135$0^{\circ}C$. The temperature difference is assumed to be attributed to the reactivity of those powders. AlN powder prepared from the Al-isopropoxide was observed to have the narrower particle size distribution than that prepared from the commercial $\alpha$-Al2O3 or AlOOH.

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On Crystallization of Hadong Kaolin Treated with Aqueous Sodium Hydroxide Solution (하동고령토의 Sodium Hydroxide 용액 처리에 의한 결정의 변화)

  • Kwon Ei Yol;Kim Myun Sup
    • Journal of the Korean Chemical Society
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    • v.16 no.4
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    • pp.249-256
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    • 1972
  • Hadong-Kaolin was treated with aqueous sodium hydroxide solution. The crystalline structure was studied by X-ray powder diffraction method. The optimum conditions for various crystal formation were as follows: Crystal Concentration Temp. reating time Halloysite 1~4 N NaOH $60^{\circ}C$ 0.5${\sim}$4 hr Sodium A zeolite 0.5${\sim}$2 N NaOH 80${\sim}$$100^{\circ}C$ 6${\sim}$20 hr Hydoxysodalite > 4 N NaOH 80${\sim}$$100^{\circ}C$ > 4 hr The ratio of $Na_2O to SiO_2$ for crystallizing sodium A zeolite was 0.5-1.5. The $Ca^{++}$ ion exchange capacity of produced sodium A zeolite for 0.2 N $CaCl_2$ solution at $25^{\circ}C$ was amounted to 65% of theoretical value.

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Growth and Electrical Properties of Spinel-type ZnCo2O4 Thin Films by Reactive Magnetron Sputtering (반응성 때려내기 방법에 의한 스피넬 형 ZnCo2O4 박막의 성장과 전기적 물성)

  • Song, In-Chang;Kim, Hyun-Jung;Sim, Jae-Ho;Kim, Hyo-jin;Kim, Do-jin;Ihm, Young-Eon;Choo, Woong-Kil
    • Korean Journal of Materials Research
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    • v.13 no.8
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    • pp.519-523
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    • 2003
  • We report the synthesis of cubic spinel $ZnCo_2$$O_4$thin films and the tunability of the conduction type by control of the oxygen partial pressure ratio. Zinc cobalt oxide films were grown on$ SiO_2$(200 nm)/Si substrates by reactive magnetron sputtering method using Zn and Co metal targets in a mixed Ar/$O_2$atmosphere. We found from X-ray diffraction measurements that the crystal structure of the zinc cobalt oxide films grown under an oxygen-rich condition (the $O_2$/Ar partial pressure ratio of 9/1) changes from wurtzite-type $Zn_{1-x}$ $Co_{X}$O to spinel-type $ZnCo_2$$O_4$with the increase of the Co/Zn sputtering ratio,$ D_{co}$ $D_{zn}$ . We noted that the above structural change accompanied by the variation of the majority electrical conduction type from n-type (electrons) to p-type (holes). For a fixed $D_{co}$ $D_{zn}$ / of 2.0 yielding homogeneous spinel-type $_2$O$ZnCo_4$films, the type of the majority carriers also varied, depending on the$ O_2$/Ar partial pressure ratio: p-type for an $O_2$-rich and n-type for an Ar-rich atmosphere. The maximum electron and hole concentrations for the Zn $Co_2$ $O_4$films were found to be 1.37${\times}$10$^{20}$ c $m^{-3}$ and 2.41${\times}$10$^{20}$ c $m^{-3}$ , respectively, with a mobility of about 0.2 $\textrm{cm}^2$/Vs and a high conductivity of about 1.8 Ω/$cm^{-1}$ /.

Properties of $CaO-P_2O_5-SiO_2$ Glasses ($CaO-P_2O_5-SiO_2$계 유리의 물성)

  • 조정식;김철영
    • Journal of the Korean Ceramic Society
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    • v.30 no.4
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    • pp.289-298
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    • 1993
  • Properties in terms of the variation of the glass compositions, which were density (p), molar volume(Vm), atom/ion packing density (Dp), refractive index (nD), transformation temperature (Tg), dilatometric softening point (Td), thermal expansion coefficient (α), Young's modulus (E), and knoop hardness (KHN) were investigated in CaO-SiO2 glasses and CaO-P2O5-SiO2 glasses containing less than 10mole% of P2O5. Those properties were measured by density measurement kit, Abbe refractometer, dilatometer, ultrasonic pulse echo equipment, and micro hardness tester. When CaO content was increased in CaO-SiO2 glasses, p, Dp, nD, Tg, Td, α, E and KHN were increased, while Vm was decreased. When P2O5 was added to the CaO-SiO2 glasses with constant CaO/SiO2 ratio as 1.07, p, Dp, nD, Tg, Td, α, E and KHN were decreased, while Vm was increased. When the amount of P2O5 in glasses was kept constant, the changes of the properties with variation of CaO content in the CaO-P2O5-SiO2 glasses were very similar to those of CaO-SiO2 glasses. These phenomena could be explained by the structural role of P2O5 in the CaO-P2O5-SiO2 glasses, which was polymerization of siicate structures and resulted in [PO4] monomer structure in glasses. Due to this structural characteristics, the bond strength and packing density were changed with compositions. Proportional relationships between 1) np and Dp, 2) Tg, Td, α and CaO content, 3) E and Vm-1, and 4) KHN and P2O5 content were evaluated in this investigation.

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SnO2-Embedded Transparent UV Photodetector (SnO2 기반의 투명 UV 광 검출기)

  • Lee, Gyeong-Nam;Park, Wang-Hee;Kim, Joondong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.12
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    • pp.806-811
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    • 2017
  • An all-transparent ultraviolet (UV) photodetector was fabricated by structuring $p-NiO/n-SnO_2/ITO$ on a glass substrate. $SnO_2$ is an important semiconductor material because of its large bandgap, high electron mobility, high transmittance (as high as 80% in the visible range), and high stability under UV light. For these reasons, $SnO_2$ is suitable for a range of applications that involve UV light. In order to form a highly transparent p-n junction for UV detection, $SnO_2$ was deposited onto a device containing NiO as a high-transparent metal conductive oxide for UV detection. We demonstrated that all-transparent UV photodetectors based on $SnO_2$ could provide a definitive photocurrent density of $4nA\;cm^{-2}$ at 0 V under UV light (365 nm) and a low saturation current density of $2.02nA{\times}cm^{-2}$. The device under UV light displayed fast photoresponse with times of 31.69 ms (rise-time) and 35.12 ms (fall-time) and a remarkable photoresponse ratio of 69.37. We analyzed the optical and electrical properties of the $NiO/SnO_2$ device. We demonstrated that the excellent properties of $SnO_2$ are valuable in transparent photoelectric device applications, which can suggest various routes for improving the performance of such devices.

Distribution and Remineralization Ratio of Inorganic Nutrients in the Divergence Zone($7^{\circ}{\sim}10.5^{\circ}N$), Northeastern Pacific (북동태평양 발산대 해역($7^{\circ}{\sim}10.5^{\circ}N$)의 무기영양염 분포와 재무기질화 비율)

  • Son, Ju-Won;Kim, Kyeong-Hong;Kim, Mi-Jin;Son, Seung-Kyu;Chi, Sang-Bum;Hwang, Keun-Choon;Park, Yong-Chul
    • The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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    • v.13 no.3
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    • pp.178-189
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    • 2008
  • The distribution of inorganic nutrients and their remineralization ratio in the divergence zone ($7^{\circ}{\sim}10.5^{\circ}N$) of the northeastern Pacific were investigated from July 2003 to July 2007. A divergence zone along the boundary of the North Equatorial Counter Current (NECC) and North Equatorial Current (NEC) at $10^{\circ}N$ was observed in July 2007 when the La Nina event and divergence-related upwelling was strong. The mean depth of oligotrophic surface mixed layer in the divergence zone was 46, 61, and 30 m in July 2003, August 2005, and July 2007, respectively. Below the surface mixed layer, a nutricline was clearly observed. The depth integrated value of nitrate including nitrite (DIVn) in the upper layer($0{\sim}100$ m depth) ranged from 5.51 to 21.71 $gN/m^2$(mean 12.82 $gN/m^2$) in July 2003, from 5.62 to 8.46 $gN/m^2$ (mean 7.15 $gN/m^2$) in August 2005, and from 8.98 to 27.80 $gN/m^2$(mean 21.12 $gN/m^2$) in July 2007. The maximum DIVn was observed at the divergence zone. The distributions of phosphate(DIVp) and silicate(DIVsi) were similar to that of DIVn and the DIVn/DIVsi ratio was $0.87{\pm}0.11$ in the upper layer. The limiting nutrient for phytoplankton growth in the study area was identified as nitrogen(N/P ratio=14.6). The nitrate (including nitrite) concentrations were lower in the region mainly affected by NEC than in the region affected by NECC. The study area of low silicate concentrations was also considered to be Si-limiting environment. The remineralization ratios of nutrients were $P/N/-O_2=1/14.6{\pm}1.1/100.4{\pm}8.8(23.44{\leq}Sigma-{\theta}{\leq}26.38)$ in the study area. These ratios suggested remineralization process in the surface layer of divergence zone.