• Journal of Powder Materials
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• v.23 no.4
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• pp.270-275
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• 2016

We report on an all-solution-processed hydrothermal method to control the morphology of ZnO nanostructures on Si substrates from three-dimensional hemispherical structures to two-dimensional thin film layers, by controlling the seed layer and the molar contents of surfactants during their primary growth. The size and the density of the seed layer, which is composed of ZnO nanodots, change with variation in the solute concentration. The ZnO nanodots act as heterogeneous nucleation sites for the main ZnO nanostructures. When the seed layer concentration is increased, the ZnO nanostructures change from a hemispherical shape to a thin film structure, formed by densely packed ZnO hemispheres. In addition, the morphology of the ZnO layer is systematically controlled by using trisodium citrate, which acts as a surfactant to enhance the lateral growth of ZnO crystals rather than a preferential one-dimensional growth along the c-direction. X-ray diffraction and energy dispersive X-ray spectroscopy results reveal that the ZnO structure is wurtzite and did not incorporate any impurities from the surfactants used in this study.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.3-3
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• 2002

Many studies on crystal growth mechanisms of the hen egg-white lysozyme protein crystals have mainly performed by optical microscopy and atomic force microscopy (AFM). As results, two types of growth mechanisms, which are a two-dimensional nucleation mechanism and a spiral growth mechanism, were identified. However, there was no direct evidence of grown-in screw dislocations at the spiral sites. We first observed the screw dislocations in tetragonal lysozyme crystals using synchrotron X-ray topography. In addition, to confirm the characteristics of dislocations, we have observed some elastic constants in lysozyme crystals in terms of the sound velocity measurement by pulse echo methods. Tetragonal hen egg-white lysozyme crystals were grown by the concentration gradient method. The crystals were grown in test tubes, with an inner diameter of 8 ㎜ and 80 ㎜ in length, held vertically. The test tubes were kept at 23C for 2 weeks. The maximum size of crystals were 3×3×4 ㎟. The high quality crystals were examined by Laue topography with a water filter using synchrotron radiation. Figure is a X-ray topograph. Several straight screw dislocations were observed. We also determined Burgers vector to be a [110] direction. The measurement of sound velocity was performed by the digital signal processing method. the crystals were placed in stainless steel vessel, which was filled with lysozyme solution used for crystal growth. We observed the longitudinal sound velocity along the [110] direction in the tetragonal is obtained to be 1817 ㎧. Therefore, Young modulus and shear modulus were evaluated to be 2.70 Gpa and 1.02 Gpa, respectively, if we assumed Poisson ratio is 0.33. These results will be discussed at the meeting.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.81-114
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• 1999

The strain, surface and inerfacial energies of III-V ternary systems were calculated for three kinds of structure modes: the Frank-van der Merwe (FM) mode, the Stranski-Krastanov (SK) mode an the Volmer-Wever (VW) mode. The free energy for each mode was estimated as functions of the thickness and composition or lattice misfit. Through comparison of the free energy of each mode, it was found that the thickness-composition phase diagrams of III-V ternary systems can be determined only by considering the balance of the free energy and three kinds of structure modes appear in the phase diagrams. The SK mode appears only when the lattice misfit is large and/or the lattice layer is thick. The most stable structure of the SK mode is a cluster with four lattice layers or minimum thickness on a wetting layer of increasing lattice layers. The VW mode appears when the lattice misfit is large and the lattice layer is thin and only in the InPSb/InP and GaPSb/GaP systems which have the largest lattice misfit of III-V ternary systems. The stable region of the SK mode in the GaPSb/GaP and InPSb/InP phase diagrams is largest of all because the composition dependence of the strain energy of these systems is stronger than that of the other systems. The critical number of lattice layers below which tow-dimensional (2D) layers precede the three-dimensional (3D) nucleation in the SK mode at x=1.0 depnds on the lattice misfit.

• Korean Journal of Materials Research
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• v.27 no.3
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• pp.132-136
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• 2017

We synthesized potassium hexatitanate, ($K_2Ti_6O_{13}$, PT6), with a non-fibrous shape, by acid leaching and subsequent thermal treatment of potassium tetratitanate ($K_2Ti_4O_9$, PT4), with layered crystal structure. By controlling nucleation and growth of PT4 crystals, we obtained splinter-type crystals of PT6 with increased width and reduced thickness. The optimal holding temperature for the layered PT4 was found to be ${\sim}920^{\circ}C$. The length and width of the PT4 crystals were increased when the nucleation and growth time were increased. After a proton exchange reaction using aqueous 0.3 M HCl solution, and subsequent heat treatment at $850^{\circ}C$, the PT4 crystal transformed into splinter-type PT6 crystals. The frictional characteristics of the friction materials show that as the particle size of PT6 increases, the coefficient of friction (COF) and wear amounts of both the friction materials and counter disc increase.

• Journal of the Korea Institute of Military Science and Technology
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• v.13 no.6
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• pp.1127-1132
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• 2010

Borosilicate glass was prepared in the composition of 81% $SiO_2$, 4% $Na_2O$, 2% $Al_2O_3$, 13% $B_2O_3$. The albite phase($NaAlSi_3O_8$) increased with the $ZrO_2$(0~10wt.%) addition. For measurement of glass transition temperature($T_g$), crystallization temperature($T_{c,max}$) measured by differential thermal analysis. The $T_g$ and $T_{c,max}$ were $510{\sim}530^{\circ}C$ $650{\sim}670^{\circ}C$, respectively. The crystallized glass was heated at various conditions(temperature, time). After nucleation at $550^{\circ}C$ for 2hours prior to crystal growth at $650^{\circ}C$ for 4hours, the resulting Vickers hardness, fracture toughness and bending strength were about $736H_v$, $1.0779MPa{\cdot}m^{1/2}$, and 493MPa, which were 17%, 45% and 149% higher than parent borosilicate glass, respectively. Crystal size and transmittance of crystallized borosilicate glass were analyzed by FE-SEM, EDX and UV-VIS-NIR spectrophotometer. Transmittance of crystallized borosilicate glass was decreased with increasing $ZrO_2$(wt%) at visible-range. The results prove that light-weight bulletproof can be fabricated by the crystallization of borosilicate glass.

• Journal of the Korean institute of surface engineering
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• v.43 no.4
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• pp.176-179
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• 2010

The InAs thin films were grown on GaAs(100) substrate with $2^{\circ}C$ tilted toward [$0\bar{1}\bar{1}$] with different As beam equivalent pressure (BEP) by using molecular beam epitaxy. Growth temperature and thickness of the InAs thin films were $480^{\circ}C$ and 0.5 ${\mu}m$, respectively. We studied the relation between the As BEP and the properties of InAs thin films. The properties of InAs thin films were observed by reflection high-energy electron diffraction (RHEED), optical microscope, and Hall effect. The growth, monitored by RHEED, was produced through an initial 2D (2-dimensional) nucleation mode which was followed by a period of 3D (3-dimensional) island growth mode. Then, the 2D growth recovered after a few minutes and the streak RHEED pattern remained clear till the end of growth. The crystal quality of InAs thin films is dependent strongly on the As BEP. When the As BEP is $3.6{\times}10^{-6}$ Torr, the InAs thin film has a high electron mobility of 10,952 $cm^2/Vs$ at room temperature.

• Journal of the Korean institute of surface engineering
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• v.46 no.4
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• pp.145-152
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• 2013

The growth behavior of nanocrystalline diamond (NCD) film has been studied for three different substrates, i.e. bare Si wafer, 1 ${\mu}m$ thick W and Ti films deposited on Si wafer by DC sputter. The surface roughness values of the substrates measured by AFM were Si < W < Ti. After ultrasonic seeding treatment using nanometer sized diamond powder, surface roughness remained as Si < W < Ti. The contact angles of the substrates were Si ($56^{\circ}$) > W ($31^{\circ}$) > Ti ($0^{\circ}$). During deposition in the microwave plasma CVD system, NCD particles were formed and evolved to film. For the first 0.5h, the values of NCD particle density were measured as Si < W < Ti. Since the energy barrier for heterogeneous nucleation is proportional to the contact angle of the substrate, the initial nucleus or particle densities are believed to be Si < W < Ti. Meanwhile, the NCD growth rate up to 2 h was W > Si > Ti. In the case of W substrate, NCD particles were coalesced and evolved to the film in the short time of 0.5 h, which could be attributed to the fact that the diffusion of carbon species on W substrate was fast. The slower diffusion of carbon on Si substrate is believed to be the reason for slower film growth than on W substrate. The surface of Ti substrate was observed as a vertically aligned needle shape. The NCD particle formed on the top of a Ti needle should be coalesced with the particle on the nearby needle by carbon diffusion. In this case, the diffusion length is longer than that of Si or W substrate which shows a relatively flat surface. This results in a slow growth rate of NCD on Ti substrate. As deposition time is prolonged, NCD particles grow with carbon species attached from the plasma and coalesce with nearby particles, leaving many voids in NCD/Ti interface. The low adhesion of NCD films on Ti substrate is related to the void structure of NCD/Ti interface.

• Journal of Information Display
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• v.2 no.3
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• pp.54-59
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• 2001

The role of $NH_3$ for vertical alignment of CNTs was investigated. The direct cause of the alignment was a dense distribution of catalytic metal particles, but which was kept catalytically active during the growth process by $NH_3$. This allows a dense nucleation of the CNTs, and consequently, assists vertical alignment through entanglement and mechanical leaning among the tubes. The CNTs grow in a base growth mode. Several evidences were presented including a direct cross-sectional TEM observation. Since Ni is consumed both by silicide reaction and by capture in the growing tube, the growth stops when Ni is completely depleted. This occurs faster for smaller particles, and thus a longer growth results in thin bottom with poor adhesion.

• Journal of Korea Foundry Society
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• v.10 no.4
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• pp.324-331
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• 1990

The single crystal of CdTe was grown by modified 6 zone Bridgman method under the conditions of excess Te and excess Cd. To prevent the constitutional supercooling, the crystal growth was done under the temperature gradient of $17^{\circ}C/cm$ in front of the solid /liquid interface and the growth rate was 3mm/hr. The grain morphologies and the growth mechanism were investigated in excess Te and excess Cd conditions. The grain size of excess Te crystal was increased with an increase of the distance from the tip but, in the case of excess Cd crystal, single crystal was not obtained because of the cavities due to the excess Cd vapors so that the grain size was not increased with an increase of the distance from the tip. In addition, the growth of single crystal of CdTe was done with repeated necking ampoule. It was found that the necking had no effects on the grain selection because the cavities trapped in the necking portion acted as heterogeneous nucleation sites.

• Journal of Powder Materials
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• v.9 no.1
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• pp.19-24
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• 2002

This paper reports the results of an investigation into the effect of Cu additions upon the nano-crystallization behaviour of an Al-Y-Ni alloy. 1 at.% Cu was added to a base alloy of Al/sub 88/Y₄Ni/sub 8/ either by substitution for Al to form Al/sub 87/Y₄Ni/sub 8/Cu₁, or by substitution for Ni to form Al/sub 88/Y₄Ni/sub 7/Cu₁. Consistent with previous findings in the literature, the substitution of Cu for Al was found to increase the thermal stability of the amorphous phase whereas the substitution of Cu for Ni was found to decrease its thermal stability. Comparing the microstructures of these alloys after heat treatment to produce equivalent volume fractions of Al nanocrystals showed average grain sizes of 14 nm, 12 nm and 9 nm for the alloys Al/sub 88/Y₄Ni/sub 8/, Al/sub 87/Y₄Ni/sub 8/Cu₁respectively. The effect of Cu in refining the size of the nanocrystals was attributed to enhanced nucleation increasing the number density of the nanocrystals, rather than diffusion limited or interface limited growth.