• 한국분말재료학회지
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• 제4권4호
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• pp.304-309
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• 1997

The synthesis of W-l5wt%Cu nanocomposite powder by hydrogen reduction of ball milled W-Cu oxide mixture was investigated in terms of powder characteristics such as particle size, mixing homogeneity and micropore structure. It is found that the micropores in the ball milled oxide (2-50 nm in size) act as an effective removal path of water vapor, followed by the formation of dry atmosphere at reaction zone. Such thermodynamic condition enhances the nucleation of W phase but suppresses the growth process, being in favor of the formation of W nanoparticles (about 21 nm in size). In addition, the superior mixing homogeneity of starting oxide mixture turned out to Play a significant role for forming extraordinary chemical homogeneity of W-l5wt%Cu nanocomposite powder.

• 한국응용과학기술학회지
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• 제28권4호
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• pp.386-392
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• 2011

We are crystallized to the linear low density polyethylene(LLDPE) particles by a thermally induced phase separation(TIPS). TIPS process based on the phase separation mechanism was performed for the LLDPE system which undergoes liquid-solid phase separation. The linear low density polyethylene particle formation occurred by the nucleation and growth mechanism in the metastable region. Although the growth rates depended on the experimental conditions such as the polymer concentration and temperature, the particles were larger when the polymer concentration was higher or temperature was higher. The particles were observed by SEM. The LLDPE particle size distribution became broader when the polymer concentration was higher.

• 한국주조공학회지
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• 제15권4호
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• pp.416-421
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• 1995

Recently Al-Cu-P alloys are used to refine primary Si of hypereutectic Al-Si alloys. Because it has inside AlP compound that acts as nucleation site in the melt, Al-Cu-P alloy has good refinement effect in lower holding temperature and after shoter holding times. In this study Al-Cu-P refinement agent was made by mechanical alloying method. When Al-13.5wt%Cu-1.5wt%P was alloyed mechanically for 30hr in Ar atmosphere by high energy ball mill, it had the refinement effect that showed primary Si size of about $30{\mu}m$ in Al-20wt%Si at $760^{\circ}C$, treated for 15min.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.390-391
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• 2006

A high Tc superconducting with a nominal composition of $Bi_2Sr_2Ca_2Cu_3O_y$ was prepared by the citarte method. The solid precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12h is not in the amorphous state as expected but in a crystalline state X-ray diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor. After pyrolysis at $400^{\circ}C$ and calcination at $840^{\circ}C$ for 4h, the (001)peak of the high Tc phase was cleary observed. Experimental results suggest that the intermediate phase formed before the formation of the superconducting phase may be the most important factor in determining whether it is easy to form the high Tc phase or not, because the nucleation bafflers of the two superconducting phase may be altered by the variation of the crystal structures of those Intermediate phase.

• ETRI Journal
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• 제19권1호
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• pp.26-35
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• 1997

The substrate effects on solid-phase crystallization of amorphous silicon (a-Si) films deposited by low-pressure chemical vapor deposition (LPCVD) using $Si_2H_6$ gas have been extensively investigated. The a-Si films were prepared on various substrates, such as thermally oxidized Si wafer ($SiO_2$/Si), quartz and LPCVD-oxide, and annealed at 600$^{\circ}C$ in an $N_2$ ambient for crystallization. The crystallization behavior was found to be strongly dependent on the substrate even though all the silicon films were deposited in amorphous phase. It was first observed that crystallization in a-Si films deposited on the $SiO_2$/Si starts from the interface between the a-Si and the substrate, so called interface-interface-induced crystallization, while random nucleation process dominates on the other substrates. The different kinetics and mechanism of solid-phase crystallization is attributed to the structural disorderness of a-Si films, which is strongly affected by the surface roughness of the substrates.

• 한국세라믹학회지
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• 제36권6호
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• pp.655-661
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• 1999

${\beta}$-SiC formation mechanism in Si melt-C-SiC system with varying in size of carbon source was investigated. A continuous reaction sintering process using Si melt infiltration method was adopted to control the reaction sintering time effectively. It was found that ${\beta}$-SiC formation mechanism in Si melt-C-SiC system was directly affected by the size of carbon source. In the Si melt-C-SiC system with large carbon source ${\beta}$-SiC formation mechanism could be divided into two stages depending on the reaction sintering time: in early stage of reaction sintering carbon dissolution in Si melt and precipitation of ${\beta}$-SiC was occurred preferentially and then SIC nucleation and growth was controlled by diffusion of carbon throughy the ${\beta}$-SiC layer formed on graphite particle. Furthmore a dissolution rate of graphite particles in Si melt could be accelerated by the infiltration of Si melt through basal plane of graphite crystalline.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.248-251
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• 2003

The large size grain of poly-Si film is obtained above the upper limit of excimer laser energy at which the random nucleation occurs. We simulate the time dependent temperature profile of ${\alpha}-Si/SiO_2/Si$ substrate structure according to the excimer laser energy with $ANSYS^{\circledR}$ simulator. As the thickness is increased, the laser energy for the melting of ${\alpha}-Si$ film is increased.

• 대한기계학회논문집B
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• 제29권12호
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• pp.1329-1334
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• 2005

Synthesis of silver nanoparticles by the supersonic nozzle expansion method with corona discharge ions was investigated. Corona discharge ions functioned as seeds for heterogeneous nucleation in the silver nanoparticles formation process and provided silver nanoparticles with electronic repulsive force that prevents aggregation of the particles. For ion ejecting, we used sonic-jet corona discharger. Upon application of the corona discharge ions, the mean diameter of the produced particles was decreased from 12.54 to 6.22nm and the standard deviation was decreased from 5.02 to 3.34nm. In addition, the agglomeration of silver nanoparticles was reduced.

• 대한전자공학회논문지
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• 제25권7호
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• pp.767-773
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• 1988

We have proposed a new simple and easy method for the observation of OSF growth and shrinkage. This method is to observe the behavior of OSF in thedamaged region during oxidation as well as annealing process after introducing mechanical damage on the silicon surface by pressure-controllable indentor. The effect of SiO2 layer on the shrinkage of pregrown OSF generated by the proposed method has been investigated using the samples with or without SiO2 layer. From the experimental data, we suggest a model for the shrinkage of OSF, which is based on the recombinaiton mechanism between silicon interstitial and vacancy at the Si-SiO2 interface.

• Bulletin of the Korean Chemical Society
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• 제32권12호
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• pp.4382-4386
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• 2011

$TiO_2$ hollow spheres were fabricated by using $SiO_2$ as an inorganic template. Spherical $SiO_2$ particles were coated by $TiO_2$ through the nucleation process, and then the core $SiO_2$ part was eliminated by using HF solution. Finally, $TiO_2$ hollow spheres were obtained. The size of the $TiO_2$ hollow spheres was about 300-400 nm and the thickness of the hollow wall was about 20-30 nm. The hollow has several holes whose diameters were within 100-200 nm. Dye-sensitized solar cells fabricated by using the $TiO_2$ hollow spheres were characterized. The solar conversion efficiency of the cell was 8.45% when $TiO_2$ hollow spheres were used as a scattering material, while it was 4.59% when $TiO_2$ hollow spheres were used as a normal electrode material.