• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.14 no.11
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• pp.1176-1181
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• 2004

In high-capacity disk drives with ever-growing track density, the allowable level of position error signal(PES) is becoming smaller and smaller. In order to achieve the high TPI(track per inch) disk drive, it is necessary to improve the writing accuracy during the servo track writing(STW) Process through the reduction of track mis-registration sources. Among the main contributors of the non-repeatable runout(NRRO) PES, the disk vibration and the head-stack assembly vibration is considered to be one of the most significant factors. Also the most contributors of repeatable runout(RRO) come from the contributors of NRRO which is written-in at the time of STW process. In this paper, the effect of NRRO on servo written-in RRO is Investigated by experimentally, and the experimental result shows that the written-in RRO can be effectively reduced through a STW process under low dense medium condition such as semi-vacuum.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.470-470
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• 2012

Organic thin film transistors (OTFTs) backplane constitute the active elements in new generations of plastic electronic devices for flexible display. The overall OTFTs performance is largely depended on the properties and quality of each layers of device material. In solution based process of organic semiconductors (OSCs), the interface state is most impediments to preferable performance. Generally, a threshold voltage (Vth) shift is usually exhibited when organic gate insulators (OGIs) are exposed in an ambient air condition. This phenomenon was caused by the absorbed polar components (i.e. oxygen and moisture) on the interface between OGIs and Soluble OSCs during the jetting process. For eliminating the polar component at the interface of OGI, the role of high vacuum seasoning on an OGI for all solution processable OTFTs were studied. Poly 4-vinly phenols (PVPs) were the material chosen as the organic gate dielectric, with a weakness in ambient air. The high vacuum seasoning of PVP's surface showed improved performance from non-seasoning TFT; a $V_{th}$, a ${\mu}_{fe}$ and a interface charge trap density from -8V, $0.018cm^2V^{-1}s^{-1}$, $1.12{\times}10^{-12}(cm^2eV)^{-1}$ to -4.02 V, $0.021cm^2V^{-1}s^{-1}$, $6.62{\times}10^{-11}(cm^2eV)^{-1}$. These results of OTFT device show that polar components were well eliminated by the high vacuum seasoning processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.250-250
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• 2010

We have prepared CIGS thin film absorber layers with simple solution spray deposition technique and thin film were synthesized with different atomic ratio. CIGS thin films were synthesized using non-vacuum solution deposition method on pre-heated sodalime glass substrates and Mo-coated soadlime glass substrate. In precursor solution were Cu : In : Ga: S ratio 4 : 3 : 2 : 8 and the crystal type of sprayed thin film were CIGS chalcopyrite structures. This structure was identified as typical chalcopyrite tetragonal structure with XRD analysis. This result showed that CIGS solution deposition technique has potential for the one step synthesis and low cost fabrication process for CIS or CIGS thin film absorber layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.297-298
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• 2011

Metal/poly (4,4'-aminotriphen-ylene hexafluoroisopropylidenediphthalimide) (TP6F PI)/metal structure exhibited an electrically volatile phase transition with high (OFF) or low (ON) resistive states when voltage between electrodes swept. Here, we demonstrate a noble set-up in which holes are injected by photoelectron emission process during the voltage sweep instead of direct charge carrier injection via metal electrode, which enables direct investigation into changed electronic structures of TP6F PI both in ON and OFF states using photoemission spectroscopy methods. In the I-V measurement, TP6F PI shows a non-volatile behavior. In spectroscopic results, this non-volatile behavior is leaded from the structural modification of the O=C double bond in phthalimide of TP6F PI by hole injection.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.294-297
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• 2008

In this paper, a novel non-vacuum technique is described for the fabrication of a $CuInSe_2$ (CIS) absorber layer for thin film solar cells using a low-cost precursor solution. A solution containing Cu- and Inrelated chemicals was coated onto a Mo/glass substrate using the Doctor blade method and the precursor layer was then selenized in an evaporation chamber. The precursor layer was found to be composed of CuCl crystals and amorphous In compound, which were completely converted to chalcopyrite CIS phase by the selenization process. Morphological, crystallographic and compositional analyses were performed at each step of the fabrication process by SEM, XRD and EDS, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.176-177
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• 2016

In the last few decades, attention toward atmospheric pressure plasma (APP) has been greatly increased due to the numerous advantages of those applications, such as non-necessity of high vacuum facility, easy setup and operation, and low temperature operation. The practical applications of APP can be found in a wide spectrum of fields from the functionalization of material surfaces to sterilization of medical devices. In the secondary battery industry, separator film has been typically treated by APP to enhance adhesion strength between adjacent films. In this process, the plasma is required to have high stability and uniformity for better performance of the battery. Dielectric barrier discharge (DBD) was usually adopted to limit overcurrent in the plasma, and we developed the pre-discharge technology to overcome the drawbacks of streamer discharge in the conventional DBD source which makes it possible to produce a super-stable plasma at atmospheric pressure. Simulations for the fluid flow and electric field were parametrically performed to find the optimized design for the linear jet plasma source. The developed plasma source (Plasmapp LJPS-200) exhibits spatial non-uniformity of less than 3%, and the adhesion strength between the separator and electrode films was observed to increase 17% by the plasma treatment.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.1-9
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• 1999

This paper presents a newly enhanced damage model in Monte Carlo (MC) simulation for the accurate prediction of 3-Dimensional (3D) as-implanted impurity and point defect profiles induced by ion implantation in (100) crystal silicon. An empirical electronic energy loss model for B, BF2, As, P and Si self implant over the wide energy range has been proposed for the ULSI device technology and development. Our model shows very good agreement with the SIMS data over the wide energy range. In the damage accumulation, we considered the self-annealing effects by introducing our proposed non-linear recomvination probability function of each point defect for the computational efficiency. For the damage profiles, we compared the published RBS/channeling data with our results of phosphorus implants. Our damage model shows very reasonable agreement with the experiments for phosphorus implants.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.41-45
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• 2016

The Cs₃Sb photocathode was formed by non-vacuum process technology and successive in-situ photocathode vacuum device fabrication carried out in a process chamber. Performance testing of the device was followed. Light emission from the devices was induced by photoemitted electrons, which were accelerated by an anode electric field that was shielded from the photoemitter surface. The luminescent characteristics of the devices were investigated by measuring the optical parameters as functions of the applied anode voltages. The results showed that this approach could produce a more easily directed and controlled stream of light. These features make these devices suitable for a variety of planar lighting applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.268.1-268.1
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• 2013

Immobilization of conducting nanoparticles on a nanogap comprising two electrodes spaced at a distance comparable to the particle size can be used as a simple and sensitive method of detecting the particles. In this work, we have examined the performance of the nanogap devices in the measurement of metallic nanoparticles, particularly gold nanoparticles (Au NPs). Detection of pM-level Au NPs in an aqueous suspension was quite straightforward irrespective of the existence of non-conducting materials. Speed of detection or the time necessary for the completion of the measurement, however, was strongly dependent upon the immobilization process. Active trapping process was found to be much more efficient and also effective in the detection of nanoparticles than its passive counterpart.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1018-1021
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• 2006

Powdered metal parts and components may be carburized successfully in a vacuum furnace by combining carburizing technology $VacCarb^{TM}$ with a hi-tech control system. This approach is different from traditional carburizing methods, because vacuum carburizing is a non-equilibrium process. It is not possible to set the carbon potential as in a traditional carburizing atmosphere and control its composition in order to obtain a desired carburized case. This paper presents test results that demonstrate that vacuum carburizing system $VacCarb^{TM}$ carburized P.M. materials faster than traditional steel with acceptable results. In the experiments conducted, PM samples with the lowest density and open porosity showed a dramatic increase in the surface carbon content up to 2.5%C and a 3 times deeper case. Currently the boost-diffusion technique is applied to control the surface carbon content and distribution in the case. In the first boost step, the flow of the carburizing gas has to be sufficient to saturate the austenite, while avoiding soot deposition and formation of massive carbides. To accomplish this goal, the proper gas flow rate has to be calculated. In the case of P.M. parts, more carbon can be absorbed by the part's surface because of the additional internal surface area created by pores present in the carburized case. This amount will depend on the density of the part, the densification grade of the surface layer and the stage of the surface. "as machined" or "as sintered". It is believed that enhanced gas diffusion after initial evacuation of the P.M. parts leads to faster carburization from within the pores, especially when pores are open . surface "as sintered" and interconnected . low density. A serious problem with vacuum carburizing is delivery of the carbon in a uniform manner to the work pieces. This led to the development of the different methods of carburizing gas circulation such as the pulse/pump method or the pulse/pause technique applied in SECO/WARWICK's $VacCarb^{TM}$ Technology. In both cases, each pressure change may deliver fresh carburizing atmosphere into the pores and leads to faster carburization from within the pores. Since today's control of vacuum carburizing is based largely on empirical results, presented experiments may lead to better understanding and improved control of the process.