• Journal of Information Technology Services
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• v.19 no.3
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• pp.139-149
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• 2020

There are now many different commercial weather sensors suitable for smart farms, and various smart farm devices are being developed and distributed by companies participating in the government-led smart farm expansion project. However, most do not comply with standard specifications and are therefore limited to use in smart farms. This paper proposed the connecting structure of operating non-standard node devices in smart farms following standard specifications supporting smart greenhouse. This connecting structure was proposed as both a virtual node module method and a virtual node wrapper method. In addition, the SoftFarm2.0 system was experimentally operated to analyze the performance of the implementation of the two methods. SoftFarm2.0 system complies with the standard specifications and supports non-standard smart farm devices. According to the analysis results, both methods do not significantly affect performance in the operation of the smart farm. Therefore, it would be good to select and implement the method suitable for each non-standard smart farm device considering environmental constraints such as power, space, distance of communication between the gateway and the node of the smart farm, and software openness. This will greatly contribute to the spread of smart farms by maximizing deployment cost savings.

• Journal of the Semiconductor & Display Technology
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• v.14 no.2
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• pp.41-45
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• 2015

From 20nm technology node, the finFET has become standard device for ULSI's. However, the finFET process made stacking gate non-volatile memory obsolete. Some reported capacitor-less DRAM structure by utilizing the FBE. We present possible non-volatile memory device structure similar to the dual gate MOSFET. One of the gates is left floating. Since body of the finFET is only 40nm thick, control gate bias can make electron tunneling through the floating gate oxide which sits across the body. For programming, gate is biased to accumulation mode with few volts. Simulation results show that the programming electron current flows at the interface between floating gate oxide and the body. It also shows that the magnitude of the programming current can be easily controlled by the drain voltage. Injected electrons at the floating gate act similar to the body bias which changes the threshold voltage of the device.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.3
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• pp.39-47
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• 2015

In this paper, we propose a new time synchronization algorithm using CoAP(constrained-application protocol) in sensor network environment, which handles a technique that synchronizes an explicit timestamp between sensor nodes not including an additional module for time-setting and sensor node gateway linked to internet time server. CoAP is a standard protocol for sensor data communication among sensor nodes and sensor node gateway to be built much less memory and power supply in constrained network surroundings including serious network jitter, packet losses, etc. We have supplied an exact time synchronization implementation among small and cheap IP-based sensor nodes or non-IP based sensor nodes and sensor node gateway in sensor network using CoAP message header's option extension. On behalf of conventional network time synchronization method, as our approach uses an exclusive protocol 'CoAP' in sensor network, it is not to become an additional burden for synchronization service to sensor nodes or sensor node gateway. This method has an average error about 2ms comparing to NTP service and offers a low-cost and robust network time synchronization algorithm.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.19 no.6
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• pp.139-144
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• 2019

For recent decades, Non-volatile Memory (NVM) technologies have been drawing a high attention both in industry and academia due to its high density and short latency comparable to that of DRAM. However, NVM devices has write endurance problem and thus the current data structures that have been built around DRAM-specific features including unlimited program cycles is inadequate for NVM, reducing the device lifetime significantly. In this paper, we revisit a red-black tree extensively adopted for data indexing across a wide range of applications, and make it to better fit for NVM. Specifically, we observe that the conventional red-black tree wears out the specific location of memory because of its rebalancing operation to ensure fast access time over a whole dataset. However, this rebalancing operation frequently updates the long-lived nodes, which leads to the skewed wear out across the NVM cells. To resolve this problem, we present a new swapping wear-leveling red-black tree that periodically moves data in the worn-out node into the young node. The performance study with real-world traces demonstrates the proposed red-black tree reduces the standard deviation of the write count across nodes by up to 12.5%.