• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.440-440
• /
• 2011

We report on the non-volatile memory characteristics of a bistable organic memory (BOM) device with Au nanoparticles (NPs) embedded in a conducting poly N-vinylcarbazole (PVK) colloids hybrid layer deposited on flexible polyethylene terephthalate (PET) substrates. Transmission electron microscopy (TEM) images show the Au nanoparticles distributed isotropically around the surface of a PVK colloid. The average induced charge on Au nanoparticles, estimated using the C-V hysteresis curve, was large, as much as 5 holes/NP at a sweeping voltage of ${\pm}3$ V. The maximum ON/OFF ratio of the current bistability in the BOM devices was as large as $1{\times}105$. The cycling endurance tests of the ON/OFF switching exhibited a high endurance of above $1.5{\times}105$ cycles and a high ON/OFF ratio of ~105 could be achieved consistently even after quite a long retention time of more than $1{\times}106$ s.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2011년도 춘계학술발표대회
• /
• pp.28.2-28.2
• /
• 2011

Resistance random access memory (ReRAM) is a promising candidate for next-generation nonvolatile memory because of its advantageous qualities such as simple structure, superior scalability, fast switching speed, low-power operation, and nondestructive readout. We investigated the resistive switching behavior of tantalum oxide that has been widely used in dynamic random access memories (DRAM) in the present semiconductor industry. As a result, it possesses full compatibility with the entrenched complementary metal-oxide-semiconductor processes. According to previous studies, TiN is a good oxygen reservoir. The TiN top electrode possesses the specific properties to control and modulate oxygen ion reproductively, which results in excellent resistive switching characteristics. This study presents fully room temperature fabricated the TiN/$TaO_x$/Pt devices and their electrical properties for nonvolatile memory application. In addition, we investigated the TiN electrode dependence of the electrical properties in $TaO_x$ memory devices. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to $10^5$ cycles. Moreover, the benefits of high devise yield multilevel storage possibility make them promising in the next generation nonvolatile memory applications.

• Smart Structures and Systems
• /
• 제13권3호
• /
• pp.375-388
• /
• 2014

The effectiveness of using the advanced seismic protection technology based on shape memory alloy (SMA) dampers to preserve a historical minaret is investigated. The proposed studied case, the minaret of Mansourah, is a seven century old minaret located in Tlemcen, Algeria. Its original height was of 47m, while nowadays, the monument is half destructed and its current height reaches the 40m. The proposed seismic retrofit is based on the technique that utilizes SMA wires as dampers for the upper flexible part of the minaret. The effectiveness of the proposed technique is numerically evaluated via non-linear finite element analysis using the structural software ANSYS. The effectiveness of the proposed device in mitigating the seismic hazard is demonstrated by the effective reduction in its dynamic response.

• Journal of Information Technology Applications and Management
• /
• 제21권3호
• /
• pp.1-17
• /
• 2014

In this study, various characteristics of R&D related economic variables were studied to analyze complexity of science and technology activities in Korea, as reliance of R&D activities of the private sector is growing by the day. In comparison to other countries, this means that it is likely to be fluctuated by economic conditions. This complexity characteristic signifies that the result of science and technology activities can be greatly different from the anticipated results - depending on the influences from economic conditions and the results of science and technology activities which may be unpredictable. After reviewing the results of 17 variables related to science and technology characteristics of complex systems intended for time-series data - in the total R&D expenditure, and private R&D expenditure, numbers of SCI papers, the existence of chaotic characteristics were. using Lyapunov Exponent, Hurst Exponent, BDS test. This result reveals science and technology activity of the three most important components in Korea which are; heavy dependence on initial condition, the long term memory of time series, and non-linear structure. As stable R&D investment and result are needed in order to maintain steady development of Korea economy, the R&D structure should be less influenced by business cycles and more effective technology development policy for improving human resource development must be set in motion. And to minimize the risk of new technology, the construction of sophisticated technology forecasting system should take into account, for development of R&D system.

• International Journal of Advanced Culture Technology
• /
• 제5권1호
• /
• pp.83-89
• /
• 2017

In this paper, we propose an extended method of one-hot Long Short-Term Memory (LSTM) and evaluate the performance on spam filtering task. Most of traditional methods proposed for spam filtering task use word occurrences to represent spam or non-spam messages and all syntactic and semantic information are ignored. Major issue appears when both spam and non-spam messages share many common words and noise words. Therefore, it becomes challenging to the system to filter correct labels between spam and non-spam. Unlike previous studies on information filtering task, instead of using only word occurrence and word context as in probabilistic models, we apply a neural network-based approach to train the system filter for a better performance. In addition to one-hot representation, using term weight with attention mechanism allows classifier to focus on potential words which most likely appear in spam and non-spam collection. As a result, we obtained some improvement over the performances of the previous methods. We find out using region embedding and pooling features on the top of LSTM along with attention mechanism allows system to explore a better document representation for filtering task in general.

• KSII Transactions on Internet and Information Systems (TIIS)
• /
• 제10권7호
• /
• pp.3272-3285
• /
• 2016

Recently, Vector of Locally Aggregated Descriptors (VLAD) has been proposed to index image by compact representations, which encodes powerful local descriptors and makes significant improvement on search performance with less memory compared against the state of art. However, its performance relies heavily on the size of the codebook which is used to generate VLAD representation. It indicates better accuracy needs higher dimensional representation. Thus, more memory overhead is needed. In this paper, we enhance VLAD image representation by using two level hierarchical-codebooks. It can provide more accurate search performance while keeping the VLAD size unchanged. In addition, hierarchical-codebooks are used to construct multiple inverted files for more accurate non-exhaustive search. Experimental results show that our method can make significant improvement on both VLAD image representation and non-exhaustive search.

• 대한전자공학회논문지
• /
• 제15권3호
• /
• pp.11-17
• /
• 1978

Medium scale 집적회로인 BCD to seven segment decoder/driver를 P-channel Metal-Oxide-Semiconductor집적회로 제작 기법으로 설계, 제작하였다. 본 소자는 특별히 common cathode seven segment light emitting diode에 적합하도록 설계되었다. decoder logic은 직렬로 연결된 두 개의 Read-Only-Memory로 구성되어 있으며 driver로는 channel이 넓은 FET를 사용하였다. 제작된 집적회로는 전원 전압이 -7 volt에서 -26 volt까지 변화할 때 정상적으로 동작하였으며 LED각 segment 전류의 non-uniformity는 약 ±10%이었다.

• 한국IT서비스학회지
• /
• 제18권1호
• /
• pp.79-90
• /
• 2019

Maximizing energy efficiency minimizes the energy consumption of computation, storage and communications required for IT services, resulting in economic and environmental benefits. Recent advancement of flash and next generation non-volatile memory technology and price decrease of those memories have led to the rise of so-called AFA (All-Flash Array) storage devices made of flash or next generation non-volatile memory. Currently, the AFA devices are rapidly replacing traditional storages in the high-performance servers due to their fast input/output characteristics. However, it is not well known how effective the energy efficiency of the AFA devices in the real world. This paper shows input/output performance and power consumption of the AFA devices measured on the Linux XFS file system via experiments and discusses energy efficiency of the AFA devices in the real world.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.211.2-211.2
• /
• 2014

Epitaxial complex oxide thin film heterostructures have attracted a great attention for their multifunctional properties, such as ferroelectricity, and ferromagnetism. Two dimensional electron gas (2DEG) confined at the interface between two insulating perovskite oxides such as LaAlO3/SrTiO3 interface, provides opportunities to expand various electronic and memory devices in nano-scale. Recently, it was reported that the conductivity of 2DEG could be controlled by external electric field. However, the switched conductivity of 2DEG was not stable with time, resulting in relaxation due to the reaction between charged surface on LaAlO3 layer and atmospheric conditions. In this report, we demonstrated a way to control the conductivity of 2DEG in non-volatile way integrating ferroelectric materials into LAO/STO heterostructure. We fabricated epitaxial Pb(Zr0.2Ti0.8)O3 films on LAO/STO heterostructure by pulsed laser deposition. The conductivity of 2DEG was reproducibly controlled with 3-order magnitude by switching the spontaneous polarization of PZT layer. The controlled conductivity was stable with time without relaxation over 60 hours. This is also consistent with robust polarization state of PZT layer confirmed by piezoresponse force microscopy. This work demonstrates a model system to combine ferroelectric material and 2DEG, which guides a way to realize novel multifunctional electronic devices.

• Journal of Advanced Marine Engineering and Technology
• /
• 제29권6호
• /
• pp.707-712
• /
• 2005

PRAM (Phase change random access memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change materials have been researched in the field of optical data storage media. Among the phase change materials. $Ge_2Sb_2Te_5$ is very well known for its high optical contrast in the state of amorphous and crystalline. However the characteristics required in solid state memory are quite different from optical ones. In this study. the structural Properties of GeSbTe thin films with composition were investigated for PRAM. The 100-nm thick $Ge_2Sb_2Te_5$ and $Sb_2Te_3$ films were deposited on $SiO_2/Si$ substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films. x-ray diffraction (XRD). atomic force microscopy (AFM), differential scanning calorimetry (DSC) and 4-point measurement analysis were performed. XRD and DSC analysis result of GST thin films indicated that the crystallization of $Se_2Sb_2Te_5$ films start at about $180^{\circ}C$ and $Sb_2Te_3$ films Start at about $125^{\circ}C$.