• 마이크로전자및패키징학회지
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• 제11권4호
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• pp.29-35
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• 2004

암모니아 펄스플라즈마를 이용하여 $WF_6$ 가스와 $NH_3$ 가스를 교대로 흘려줌으로써 Si 기판위에 질화텅스텐 확산방지막을 증착하였다. $WF_6$ 가스는 Si과 반응하여 표면침식이 과도히 발생하였으나 암모니아 ($NH_3$)가스를 펄스 플라즈마를 인가하여 $WF_6$와 같이 사용하면 Si 표면을 질화처리 함으로써 표면침식을 막아주며 질화텅스텐 박막을 쉽게 증착할 수 있었다. 그 이유는 암모니아 가스의 분해를 통한 Si 기판의 흡착을 용이하게 하여 질화텅스텐 박막 증착이 가능하기 때문이다. 이러한 증착 미케니즘과 암모니아 펄스 플라즈마 효과에 대하여 조사하였다.

• 한국환경보건학회:학술대회논문집
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• 한국환경보건학회 2004년도 International Conference Current Challenges and Advances in Environmental Health
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• pp.45-50
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• 2004

Indoor air quality can be affected by indoor sources, ventilation, decay and outdoor levels. Alt hough technologies exist to measure these factors, direct measurements are often difficult. The purpose of this study was to develop an alternative method to characterize indoor environmental factors by multiple indoor and outdoor measurements. Daily indoor and outdoor NO2 concentrations were measured for 30 consecutive days in 28 houses in Brisbane, Australia, and for 21 consecutive days in 37 houses in Seoul, Korea. Using a mass balance model and regression analysis, penetration factor (ventilation rate divided by the sum of ventilation rate and deposition constant) and source strength factor (source strength divided by the sum of ventilation rate and deposition constant) were calculated using multiple indoor and outdoor measurements. Subsequently, the ventilation rate and NO2 source strength were estimated. Geometric means of ventilation rate were 1.44 ACH in Brisbane, assuming a residential NO2 deposition constant of 1.05 hr-1, and 1.36 ACH in Seoul, with the measured residential NO2 deposition constant of 0.94 hr-1. Source strengths of N02 were 15.8 ${\pm}$ 18.2 ${\mu}$g/m3${\cdot}$hr and 44.7 ${\pm}$ 38.1 ${\mu}$g/m3${\cdot}$hr in Brisbane and Seoul, respectively. In conclusion, indoor environmental factors were effectively characterized by this method using multiple indoor and outdoor measurements.

• Advances in Traditional Medicine
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• 제9권3호
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• pp.259-267
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• 2009

Curcumin (CMN) is known to have beneficial role in anorexia, coryza, cough, diabetic wounds, and hepatic disorders apart from its inherent antioxidant effects. Therefore, the present study was aimed to evaluate antioxidant effect of CMN in prevention of nephrolithiasis in rats-induced by ethylene glycol (EG) and Vitamin D3 (Vit. D3). Male Wistar rats (175 - 200 g) were randomized in groups like control, EG + Vit. D3 induced nephrolithiatiatic rats, CMN treated rats, CMN + EG + Vit. D3 treated rats, Vit. E + EG + Vit. D3 treated rats. Urine was collected weekly throughout the experimental protocol and estimated for calcium oxalate (CaO) count. After completion of experimental protocol serum was estimated for blood urea nitrogen and creatinine. Both the kidneys were excised and used to evaluate levels of biomarkers of oxidative stress and calcium oxalate crystal deposition by histopathological studies. Administration of EG and Vit. D3 to rats resulted in increased oxidative stress, hyperoxaluria and renal deposition of CaO crystals. Supplementation with CMN improves kidney function, reduces elevated oxidative stress, urinary oxalate level and renal deposition of CaO which shows its protective action in nephrolithiasis. The increased deposition of stone in the kidney and stone forming constituents of nephrolithiatic rats were effectively lowered by treatment of CMN.

• 한국진공학회지
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• 제17권5호
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• pp.455-460
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• 2008

최근까지 유기박막의 제조에 있어서 진공 증착 혹은 스핀코팅법의 대체방법으로 펄스 레이져 증착법 (PLD: Pulsed laser deposition)에 많은 관심이 되고 있는 실정이다. 본 논문에서는 유기발광소자(OLED)의 제작을 위해 $Alq_3$(aluminato-tris-8-hydroxyquinolate)와 TPD의 유기물을 질소($N_2$)분위기 상태에서 KrF($\lambda$=278 nm) 엑시머 레이저를 이용한 PLD법으로 증착하였고, 증착공정변화에 따른 증착된 박막의 분자 및 광학적 특성의 효과를 PL과 FT-IR등을 이용하여 평가하였다.

• 한국대기환경학회지
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• 제25권2호
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• pp.99-107
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• 2009

This paper reviews the current status of mercury research on exposure and contamination, mercury emissions, emission limits and control technologies, long-range transport and deposition research, and mercury management policy in Korea. According to a monitoring of the Ministry of Environment and the Ministry of Health and Welfare, blood mercury levels among Koreans are $5{\sim}8$ times higher than those of U.S. and Germany. The most dominant source of exposure to mercury is through dietary intake. Emissions of mercury from coal-fired power plants are estimated 8.93 ton/year in 2004. Emissions of mercury from other important sources, such as waste incineration, steel and cement manufacturing and non-ferrous metal smelting operations are to be further investigated. A study on long-range transport of mercury suggests that the dry deposition flux over the Yellow Sea was much greater than those for other oceans. As a whole, the amounts of wet depositions of nitrogen and sulfur were 1.9 and 1.5 times larger than the amounts of dry depositions in each species, respectively. Substantial influence from China caused by high emissions in East China and westerly wind was possibly suggested. However, the influence from nitrogen emission in Korea was also confirmed. Korean Government has already adopted stringent emission limits on mercury for incinerators and boilers in 2005. However, emission limits for coal-fired power plants and non-ferrous metal smelters are rather relaxed. As the above mentioned two sources can be two most important sources of mercury emissions, control strategy for those sources are to be considered.

• 마이크로전자및패키징학회지
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• 제22권4호
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• pp.111-115
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• 2015

실리콘 태양전지의 효율을 향상하기 위해서는 소수 캐리어의 높은 수명이 필수조건이다. 따라서, 이를 달성하기 위한 실리콘 표면결함을 없애줄 수 있는 부동화(passivation) 기술이 매우 중요하다. 일반적으로 PECVD 법이나 열산화 공정을 통해 얻어진 $SiO_2$ 박막이 부동화 층으로 많이 사용되나 1000도에 이르는 고온 공정과 낮은 열적 안정성이 문제로 여겨진다. 본 연구에서는 원자층 증착법을 이용하여 400도 미만의 저온 공정을 통해 $Al_2O_3$ 부동화 박막을 형성하였다. $Al_2O_3$ 박막은 고유의 음의 고정 전하밀도로 인해 낮은 표면 재결합속도를 보이는 것으로 알려져 있다. 본 연구에서는 질소 도핑을 통해 높은 음의 고정 전하 밀도를 얻고 이를 통해 좀 더 향상된 실리콘 표면 부동화 특성을 얻고자 하였다.

• Asian Journal of Atmospheric Environment
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• 제5권2호
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• pp.134-143
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• 2011

The present study aimed to investigate the diurnal variations in air concentrations and exchange fluxes of ammoniacal nitrogen ($NH_x$: ammonia ($NH_3$) and particulate ammonium) in a subalpine deciduous forest in central Japan during a week in summer. The $NH_3$ concentrations ($0.50\;{\mu}g\;N\;m^{-3}$ on average) showed a clear circadian variation, i.e., high and low in the daytime and nighttime, respectively. The concentration of particulate ammonium in the coarse fractions was extremely low, whereas that for the PM2.5 fraction was relatively high $0.55\;{\mu}g\;N\;m^{-3}$ on average). The main inorganic ion components of PM2.5 at the study site were ammonium and sulfate. The exchange fluxes of $NH_x$ were bidirectional. Both the maximum and minimum values occurred in the daytime, i.e., $0.39\;mg\;N\;m^{-2}\;hr^{-1}$ of downward flux and $0.11\;mg\;N\;m^{-2}\;hr^{-1}$ of upward flux for $NH_3$ and $0.25\;mg\;N\;m^{-2}\;hr^{-1}$ of downward flux and $0.13\;mg\;N\;m^{-2}\;hr^{-1}$ of upward flux for PM2.5 ammonium. The exchange fluxes of $NH_x$ at night could be considered as zero. The mean deposition velocity during the research period was almost zero for both $NH_3$ and PM2.5 ammonium. The atmosphere-forest exchange of $NH_x$ in the forest during the study period was balanced. The remarkably large deposition of $NH_x$ was attributable to meteorological events such as showers the night before that thoroughly washed the forest canopy and subsequent clear skies in the morning, which enhanced convection. The cleaning effect of rainfall and the rapid change in convection in the early morning should be monitored to evaluate and generalize the gas and particle exchange in a forest.

• 한국재료학회지
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• 제24권4호
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• pp.194-200
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• 2014

Metallic Cr film coatings of $1.2{\mu}m$ thickness were prepared by DC magnetron sputter deposition method on c-plane sapphire substrates. The thin Cr films were ammoniated during horizontal furnace thermal annealing for 10-240 min in $NH_3$ gas flow conditions between 400 and $900^{\circ}C$. After annealing, changes in the crystal phase and chemical constituents of the films were characterized using X-ray diffraction (XRD) and energy dispersive X-ray photoelectron spectroscopy (XPS) surface analysis. Nitridation of the metallic Cr films begins at $500^{\circ}C$ and with further increases in annealing temperature not only chromium nitrides ($Cr_2N$ and CrN) but also chromium oxide ($Cr_2O_3$) was detected. The oxygen in the films originated from contamination during the film formation. With further increase of temperature above $800^{\circ}C$, the nitrogen species were sufficiently supplied to the film's surface and transformed to the single-phase of CrN. However, the CrN phase was only available in a very small process window owing to the oxygen contamination during the sputter deposition. From the XPS analysis, the atomic concentration of oxygen in the as-deposited film was about 40 at% and decreased to the value of 15 at% with increase in annealing temperature up to $900^{\circ}C$, while the nitrogen concentration was increased to 42 at%.

• 한국진공학회지
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• 제8권1호
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• pp.43-50
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• 1999

이온빔보조증착법으로 h-BN을 증착하여 이온에너지 및 기판온도에 따른 hexagonal ring의 배열 및 결정성의 변화를 연구하였다. 보론은 전자빔으로 1.5 $\AA$/sec 의 속도로 증발시켰으며, 질소는 둥-hall 형 이온건으로 60, 80, 100eV의 에너지로 공급하였다. 기판의 온도는 상온(no heating), 200, 400, 500, $800^{\circ}C$로 변화시켰다. 질소이온에너지가 증가할수록 hexagonal ring의 c축은 기판에 평행하게 배열하여 100 eV의 질소이온에너지에서 가장 좋은 배열을 나타내었다. 이는 이온에너지가 높을수록 합성 막에 큰 압축응력이 발생하기 때문으로 생각된다. 기판온도에 따라서는 온도가 증가함에 따라 배열이 증가하다가 약 $400^{\circ}C$에서 최대가 되고 그 보다 높은 온도에서는 배열이 감소하였다. 그리고 결정도는 온도가 증가할수록 향상되었다. 이러한 경향들은 온도가 증가함에 따라 원자 이동도는 증가하고 응력발생은 어려워지는 경향으로부터 잘 설명된다. 또한 nano-indentor로 측정한 h-BN막의 경도는 c-축의 배열정도와 같은 경향을 보였다. 이온빔보조증착법은 hexagonal ring의 배열을 통해 h-BN막 성질의 최적화에 효과적인 방법으로 판단된다.

• 한국진공학회지
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• 제7권s1호
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• pp.85-99
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• 1998

A ultrahigh vacuum chemical vapor deposition(UHVCVD)/metalorganic chemical vapor deposition(MOMBE) system equipped with a radio frequency(RF)-plasma cell was employed to grow GaN layer on the sapphire at a low temperature. The x-ray photoelectron spectroscopy analysis of nitrogen composition on the nitridated sapphite surface indicated that a nitridation process is mostly affected by the RF power at low temperature. Atomic force microscope images of nitridated surface the protrusion density on the nitridated sapphire is dependent on the nitridation temperature. The crystallinity of GaN grown at $450^{\circ}C$ was found to be much improved when the sapphire was nitridated at low temperature prior to the GaN layer growth. Moreover, a strong photoluminescence spectrum of GaN grown by UHVCVD/MOMBE with a rf-nitrogen plasma was observed for the first time at room temperature.