• Journal of Korean Society for Atmospheric Environment
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• v.34 no.1
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• pp.120-143
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• 2018

The analytical methods and their ambient levels of organic nitrogenous compounds such as nitrosamines, nitramines (nitroamines), imines, amides and nitro-polycyclic aromatic hydrocarbons (nitro-PAHs) in the atmosphere are summarized and discussed. Sampling for the analysis of organic nitrogenous compounds was mostly conducted using high volume air sampler. The direct liquid extraction (DLE) using sonification and the pressurized liquid extraction (PLE) using the accelerated solvent extraction (ASE) have been frequently employed for the extraction of organic nitrogenous compounds in the atmospheric samples. After extraction, clean-up via filtration and the solid phase extraction (SPE) and concentrations using nitrogen and rotary evaporator have been generally conducted but in some studies the clean-up and concentration steps have been omitted to prevent the loss of analyte and improve the recovery rate of the analytical procedure. Instrumental analysis was mainly carried out using gas chromatography (GC) or the high performance liquid chromatography (HPLC) coupled with the single quadrupole mass spectrometer or tandem mass spectrometer in the electron ionization (EI), positive chemical ionization (PCI) and negative chemical ionization (NCI) mode and analysis sensitivity of nitrosamines and nitramines were higher in NCI mode. Desirable sampling and analysis methods for analyzing particulate organic nitrogenous compounds are suggested.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.247-255
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• 2000

Silicon carbide with sialon was prepared by hot pressing and transient liquid-phase sintering, and the effects of sintering atmosphere and starting phases on their microstructural characteristics were investigated. The sintered SiC with Sialon composition(Y2O3, AlN, Si3N4) in argon atmosphere had high sintered density and large aspect ratio. But sintered specimens in nitrogen atmosphere showed low aspect ratio and small grian size, becuase of the retardation of phase transformation and grain growth. Addition of Y-Sialon powder to SiC also retarded the phase transformation to ${\alpha}$-SiC from ${\beta}$-SiC and densification. The SiC specimen prepared from the starting ${\beta}$-SiC powder with Sialon composition(Y2O3, AlN, Si3N4) showed the highest fracture toughness about 6.0 MPa$.$m1/2.

• 전기의세계
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• v.17 no.2
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• pp.16-26
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• 1968

Cds is possible to add excess donors and to compensate partially using other group metals as acceptors. The impurities can ble incorporated either during crysta growth or by diffusion into a bulkcrystal. The addition of rimpurities leads also to the production of vacancies in a manner depending on the atmosphere surrounding the crystal during growth, during the diffusion process or using bulk. Cds of the mentioned above affects spectral sensitivity, speed of response, the variation on photocurrent, electron life time, and decay of photoconductivity with temperature and with intensity of illumination. In the work to be deseribed, these properties have been studied between liquid nitrogen and room temperature. In addition, the electron trap distribution has been correlated with speed of response, variation of photocurrent with temperature in various atmosphere. Four major trapping levels have been observed, and their identification with impurity and vacancy levels is discussed. And also the effects of lattice imperfections on the photoconductive properties CdS were investigated in detail.

• Journal of the Korean Ceramic Society
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• v.24 no.4
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• pp.349-356
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• 1987

${\beta}$-Sialon powder was synthesized by the simultaneous reduction and nitridation of Hadong kaolin at 1350$^{\circ}C$ in N2-H2 atmosphere, using graphite as a reducing agent. The synthesized ${\beta}$-Sialon powder was pressurelessly sintered over 1450-1850$^{\circ}C$ in nitrogen atmosphere. The average particle size of ${\beta}$-Sialon powder was about 4.5$\mu\textrm{m}$. The relative density, M.O.R., fracture toughness and micro-hardness of ${\beta}$-Sialon ceramics sintered at 1800$^{\circ}C$ for 1 hour were 92%, 36 kpsi, 2.8MN/㎥/2 and 13.3 GN/㎡, respectively. The critical temperature difference (ΔT) in water quench thermal shock behavior showed about 375$^{\circ}C$ for the synthesized ${\beta}$-Sialon ceramics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.134-138
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$nd annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1022-1025
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• 2001

This paper presents the characteristics of TaN thin-film as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4∼20%)N$_2$). The electrical and mechanical characteristics of these films investigated with the thickness range 1650∼1870${\AA}$ and room temperature resistivities in the range 178.3 ${\mu}$$\Omega$cm to 3175.7 ${\mu}$$\Omega$cm. The TaN thin-film strain gauge deposited in Ar-(20%)N$_2$atmosphere is obtained a temperature coefficient of resistance(TCR), 0∼-1357 ppm/$^{\circ}C$ in the temperature range 25∼275$^{\circ}C$ and a high temporal stability with a longitudinal gauge factor, 2.92∼3.47. Because of their high resistivity, low TCR and linear gauge factor, these cermet thin-film may allow high-temperature strain gauges miniaturization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.725-728
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• 2001

We have fabricated thin films using the DC/RF magnetron sputtering of 74wt%Ni-l8wt%Cr-4wt%Al-4wt%Cu alloy target and studied the effect of the process parameters on the electrical properties for low TCR(Temperature Coefficient of Resistance) films. In sputtering process, pressure, power and substrate temperature, are varied as controllable parameter. The films are annealed to 400$^{\circ}C$ in air and nitrogen atmosphere. The sheet resistance, TCR of the films increases with increasing annealing temperature. It abruptly increased as annealing temperature increased over 300$^{\circ}C$ in air atmosphere. From XRD, it is found that these results are due to the existence of NiO on film surface formed by annealing. As a results of them, TCR can be controlled by variation of sputter process parameter and annealing of thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.135-141
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by OC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$ and annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• Journal of Korea Foundry Society
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• v.27 no.3
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• pp.131-134
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• 2007

[ $SF_6$ ] gas that is used as a protective cover gas for Mg and Mg alloys during melting and casting has extremely high greenhouse effect. CaO added Mg alloys could maintain their original mechanical properties and original abilities such as fluidity and hot tearing susceptibility. The ignition temperature increased with increasing CaO addition under ambient atmosphere and nitrogen atmosphere. The minimum amount of $SF_6$ gas decreased by 0.13 wt%CaO added AZ91D Mg alloy in the sealed condition.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1596-1598
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• 2002

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-($4{\sim}16%$)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vacuum furnace range $500{\sim}1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, ${\rho}$=768.93 ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR = -84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF = 4.12.