• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.49-50
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• 2005

Nitrogen and phosphorus ions were implanted into ZnO thin film fabricated by pulsed laser deposition. ion implanted ZnO thin films were annealed from $700^{\circ}C$ to $1000^{\circ}C$ using rapid thermal annealing process. The electron concentration was changed form $10^{20}$ to $10^{18}/cm^3$. Effect of nitrogen and phosphorus in ZnO thin films was certified and the structural and optical properties of nitrogen and phosphorus doped ZnO thin films depending on concentration of nitrogen and phosphorus were investigated.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.51-52
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• 2005

Phosphorus doped ZnO thin films on (001) $Al_2O_3$ substrate have been prepared by a pulsed laser deposition (PLD) technique using a Nd:YAG laser. After deposition, phosphorus doped ZnO thin films have been annealed in vacuum, air, nitrogen, and oxygen ambients using pulsed Nd:YAG laser. We report the electrical properties of phosphorus doped ZnO thin films with the variation of the laser annealing conditions for the applications of optoelectronic devices.