• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.189-189
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• 2011

인공관절은 노인성 질환이나 자가 면역질환, 신체적인 외상 등으로 인하여 발생하는 관절의 손상 부위를 대체하기 위해 고안된 관절의 인공 대용물이다. 인공 관절 중 인공 고관절의 경우 관절 운동을 하는 라이너(Liner)와 헤드(Head) 부분이 인공관절의 수명을 결정하게 되는데, 헤드 부분에 메탈소재와 라이너 부분에 고분자 소재를 사용하는 MOP (metal on polymer) 구조의 인공관절은 충격흡수의 장점이 있는 반면 wear debris에 의한 골용해로 인하여 관절이 느슨해지는 문제점이 발생하여 재 시술의 주요 원인이 되고 있다. 또한 메탈 헤드의 마모로 인한 금속이온의 용출은 세포 독성의 문제를 야기하여 인공관절의 수명을 낮추는 또 하나의 요인이 되고 있다. 따라서 인공관절의 수명을 늘리기 위해 DLC, ZrO, TiN 등의 높은 경도 값을 갖는 박막을 금속 헤드 위에 증착하여 상대재인 인공관절용 고분자 소재의 마모량을 줄이고자 하는 연구가 활발하게 진행 되고 있다. 본 연구에서는 PIII&D (Plasma Immersion Ion Implantation & Deposition)공정을 이용하여 Co-Cr-Mo 합금 소재 niobium nitride (NbN) 박막을 증착하여 상대제인 UHMWPE (ultra high molecular polyethylene)의 마모를 줄이고자 하는 연구를 진행하였다. 마모량을 감소시키기 위하여, 박막 증착전에 질소를 이온주입하는 pre-ion implantation 공정을 도입하였으며, 또한 Co-Cr 합금과 NbN박막 사이의 접착력을 증가시키기 위하여 박막의 증착 초기에 이온주입과 증착을 동시에 수행하는 dynamic ion mixing공정을 수행하였다. NbN 박막의 특성을 평가하기 위해 XRD, XPS, AFM 등의 분석을 수행하였으며, 상대재인 초고분자량 폴리에틸렌의 마모량을 측정하기 위해 Pin-on-disk tester를 이용하여 마모 실험을 진행하였다. 마모 실험 결과, pre-ion implantation 공정을 도입한 경우 현재 상용화 되어있는 Co-Cr 합금에 비하여 마모량을 2배 이상 감소시키는 것을 확인 할 수 있었으며, dynamic ion mixing 공정을 도입한 경우 장시간의 마모 시험에 대한 마모 특성이 향상 되는 것을 확인 할 수 있었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.129-129
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• 2018

Hard coating application is effective way of cutting tool for hard-to-machine materials such as Inconel, Ti and composite materials focused on high-tech industries which are widely employed in aerospace, automobile and the medical device industry also Information Technology. In cutting tool for hard-to-machine materials, high hardness is one of necessary condition along with high temperature stability and wear resistance. In recent years, high-entropy alloys (HEAs) which consist of five or more principal elements having an equi-atomic percentage were reported by Yeh. The main features of novel HEAs reveal thermodynamically stable, high strength, corrosion resistance and wear resistance by four characteristic features called high entropy, sluggish diffusion, several-lattice distortion and cocktail effect. It can be possible to significantly extend the field of application such as cutting tool for difficult-to-machine materials in extreme conditions. Base on this understanding, surface coatings using HEAs more recently have been developed with considerable interest due to their useful properties such as high hardness and phase transformation stability of high temperature. In present study, the nanocomposite coating layers with high hardness on WC substrate are investigated using high entropy alloy target made a powder metallurgy. Among the many surface coating methods, reactive magnetron sputtering is considered to be a proper process because of homogeneity of microstructure, improvement of productivity and simplicity of independent control for several critical deposition parameters. The N2 is applied to reactive gas to make nitride system with transition metals which is much harder than only alloy systems. The acceleration voltage from 100W to 300W is controlled by direct current power with various deposition times. The coating layers are systemically investigated by structural identification (XRD), evaluation of microstructure (FE-SEM, TEM) and mechanical properties (Nano-indenter).

• 한국표면공학회지
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• 제36권3호
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• pp.229-233
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• 2003

Boron-Carbon-Nitrogen (B-C-N) system is an attractive ternary material since it has not only an extremely high hardness but also a number of other prominent characteristics such as chemical inertness, elevated melting point, and low thermal expansion. In this paper, the corrosion behavior of B-C-N thin films in aqueous solution was investigated B-C-N films with different composition were deposited on a platinum plate by magnetron sputtering in the thickness range of 150-280 nm. In order to understand effect of pH of solutions, $BC_{2.\;4}N$ samples were immerged in 1M HCl, 1M NaCl, and 1M NaOH solution at 298k, respectively. BCN samples with different carbon contents were exposed to 1M NaOH solutions to investigate effect of chemical composition on corrosion resistance. Corrosion rates of samples were measured by ellipsometry, From results, optical constant of $BC_{2,\;4}N$ films was found to be $N_2=2.110-0.295i$. The corrosion rates of $Bi_{1.\;0}C_{2.\;4}N_{1.\;0}$ films were NaOH>NaCl>HCl in orders. With increasing carbon content in B-C-N films, the corrosion resistance of B-C-N films was enhanced. The lowest corrosion rate was obtained for $B_{1.\;0}C_{4.\;4}N_{1.\;9}$ film.

• 한국세라믹학회지
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• 제40권1호
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• pp.77-80
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• 2003

수용액 내에서 질화물 박막의 산화저항성 흡착 피막의 형성을 확인하기 위하여 Si$_3$N$_4$분말 표면의 glycine 흡착 거동을 조사하였다. 염기성분위기에서 glycine은 Si$_3$N$_4$ 분말 표면에 포화 흡착되었으며 이러한 흡착거동은 Si$_3$N$_4$ 박막의 경우에도 동일하게 일어날 것으로 예상되었다. Glycine을 첨가한 CeO$_2$ 슬러리를 제조하고 PH에 따른 Si$_3$N$_4$와 SiO$_2$ 박막의 연마시험을 수행하여 연마율은 감소하고 선택비는 증가하는 것을 확인하였다. 실험에서 얻은 최대 선택비는 pH=12에서 35 이상이었다. 이는 염기성 분위기에서 glycine이 해리하여 막 표면에 화학흡착하고 산화와 용해를 억제함으로써 연마율을 낮추고 선택비 향상에 기여하였기 때문으로 판단된다. 아미노산 계열의 첨가제를 CeO$_2$계 CMP용 슬러리에 적용하는 경우 산화물/질화물 박막의 선택비를 향상시키는데 효과적임을 확인하였다.

• Korean Chemical Engineering Research
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• 제46권4호
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• pp.676-680
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• 2008

Radio-frequency (rf) 마그네트론 스퍼터링법을 이용하여 $SiO_2(2000{\AA})/Si$ 기판위에 TiN 박막이 증착되었다. $N_2/Ar$ 혼합가스에서 $N_2$ 가스의 농도, rf power, 공정압력 등을 변화시켜서 TiN 박막이 증착되었고 증착된 박막의 증착속도, 전기저항도 및 표면의 거칠기 등이 조사되었다. $N_2$ 가스의 농도가 증가함에 따라서 증착속도는 감소하였고 저항도는 증가하였으며 표면의 거칠기는 감소하였다. rf power가 증가함에 따라서 증착속도는 증가하였지만 저항도는 감소하였다. 증착압력의 증가에 따라서 증착속도는 큰 변화가 없었지만 저항도가 급격히 증가하였으며, 1 mTorr의 압력에서 $2.46{\times}10^{-4}{\Omega}cm$의 저항도를 갖는 TiN 박막이 얻어졌다. 박막의 증착속도와 저항도는 상관관계가 있는 것이 관찰되었고 특히 증착압력이 박막의 저항도에 가장 큰 영향을 미치는 것을 알 수 있었다.

• 한국세라믹학회지
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• 제49권6호
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• pp.631-636
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• 2012

Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, $Al_2O_3/Y_2O_3/SiO_2$ (AYO) multilayer structures using a high-k $Y_2O_3$ film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a $Y_2O_3$ layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the $Y_2O_3$ with 4 nm $SiO_2$ tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to $10^4$) due to the superior charge-trapping characteristics of $Y_2O_3$. We expect that these high-k $Y_2O_3$ films can be candidates to replace $Si_3N_4$ films as the charge-trapping layer in SONOS-type flash memory devices.

• 센서학회지
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• 제2권1호
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• pp.95-99
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• 1993

영상 센서를 위한 비정질 실리콘 박막트랜지스터 (a-Si : HTFT)를 제작하고 그 동작 특성 을 조사하였다. 게이트 절연막으로는 비정질 실리콘 질화막(a-SiN : H)을 증착하였으며 소오스와 드레인 영역에서의 저항성 접합을 위해 $n^{+}$ 형 비정질 실리콘($n^{+}$-a-Si : H)을 증착하였다. 이 때 a-SiN : H막과 a-Si : H막의 두께는 각각 $2000{\AA}$, $n^{+}$-a-Si : H막의 두께는 $500{\AA}$이었다. 또한 a-Si : H TFT의 채널길이와 채널폭은 각각 $50{\mu}m$와 $1000{\mu}m$였다. 본 연구에서 제작한 a-Si : H TFT의 ON/OFF 전류비는 $10^{5}$, 문턱전압은 6.3 V 그리고 전계효과 이동도는 $0.15cm^{2}/V{\cdot}s$로 나타났다.

• 정보저장시스템학회논문집
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• 제2권2호
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• pp.96-99
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• 2006

In this research, a wafer-level transfer method of cantilever away on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.109-109
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• 2010

$Er^{3+}$ ion shows a stable and efficient luminescence at 1.54mm due to its $^4I_{13/2}\;{\rightarrow}\;^4I_{15/2}$ intra-4f transition. As this corresponds to the low-loss window of silica-based optical fibers, Er-based light sources have become a mainstay of the long-distance telecom. In most telecom applications, $Er^{3+}$ ions are excited via resonant optical pumping. However, if nanocluster-Si (nc-Si) are co-doped with $Er^{3+}$, $Er^{3+}$ can be excited via energy transfer from excited electrical carriers in the nc-Si as well. This combines the broad, strong absorption band of nc-Si with narrow, stable emission spectra of $Er^{3+}$ to allow top-pumping with off-resonant, low-cost broadband light sources as well as electrical pumping. A widely used method to achieve nc-Si sensitization of $Er^{3+}$ is high-temperature annealing of Er-doped, non-stoichiometric amorphous thin film with excess Si (e.g.,silicon-rich silicon oxide(SRSO)) to precipitate nc-Si and optically activate $Er^{3+}$ at the same time. Unfortunately, such precipitation and growth of nc-Si into Er-doped oxide matrix can lead to $Er^{3+}$ clustering away from nc-Si at anneal temperatures much lower than ${\sim}1000^{\circ}C$ that is necessary for full optical activation of $Er^{3+}$ in $SiO_2$. Recently, silicon-rich silicon nitride (SRSN) was reported to be a promising alternative to SRSO that can overcome this problem of Er clustering. But as nc-Si formation and optical activation $Er^{3+}$ remain linked in Er-doped SRSN, it is not clear which mechanism is responsible for the observed improvement. In this paper, we report on investigating the effect of separating the nc-Si formation and $Er^{3+}$ activation by using hetero-multilayers that consist of nm-thin SRSO or SRSN sensitizing layers with Er-doped $SiO_2$ or $Si_3N_4$ luminescing layers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.