• Journal of the Korean Chemical Society
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• v.37 no.12
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• pp.1019-1024
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• 1993

The coadsorption of carbon monoxide and oxygen on polycrystalline nickel surface has been studied using XPS at the room temperaure. The adsorption of CO on the nickel surface precovered partially with oxygen is found to take place by the following steps: The CO molecules react with the preadsorbed oxygen atoms to liberate $CO_2$ gas at the initial stage of low CO exposures, and they are coadsorbed gradually with the increasing CO exposures. The extent of coadsorption at the higher CO exposures is found to decrease with the increasing degree of oxygen preadsorption. This finding is explained in terms of the reduced adsorption site for CO as a consequence of oxygen preadsorption. The CO molecules preadsorbed on the nickel surface inhibited the adsorption of $O_2$ molecules. The increase of oxygen exposure led to the dissociation of preadsorbed CO, and the NiO layers were formed concurrently. The dissociation was rendered to arise from an oxygen-to-CO energy transfer.

• Journal of the Korean Chemical Society
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• v.41 no.11
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• pp.594-599
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• 1997

Lithium nickel oxide ($Li_{2x}Ni_{1-x}O$) thin films have been prepared by the RF sputtering of lithiated nickel oxide target, where the film microstructure was controlled by the sputtering atmosphere $(Ar/O_2)$ and the substrate temperature ($T_s=50/230^{\circ}C$). From the transmission electron microscopic analysis, it is found that the most porous film with the grain size of $∼80\AA$ could be fabricated under the sputtering atmosphere of $P(O_2)=8{\times}10^2$ mbar with the $$T_s$=50^{\circ}C.$ In the optical and electrochemical studies, the$Li_{2x}Ni_{1-x}O$ films exhibit a significant electrochromic property in association with the lithium insertion/deinsertion process. The amount of charge insertion ($Q_i$) and the optical density (OD) variation depend on the crystallinity of the film as well as its thickness, and for the $Li_{2x}Ni_{1-x}O$ film (170 nm thickness) prepared under $O_2$ atmosphere and $T_s=50^{\circ}C$, the OD could be increased up to ∼1.3 by the charge insertion with $Q_i=30\;mC/cm^2.$

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• Transactions of the Korean hydrogen and new energy society
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• v.29 no.5
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• pp.434-441
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• 2018

The pore size of nickel (Ni) bottom electrode layer (BEL) for low-temperature solid oxide fuel cells embedded with ultrathin-film electrolyte was controlled by changing the substrate surface morphology and deposition process parameters. For ~150-nm-thick Ni BEL, the upper side of an anodic aluminum oxide (AAO) substrate with ~65-nm-sized pores provided ~1.7 times smaller pore size than the lower side of the AAO substrate. For ~100-nm-thick Ni BEL, the AAO substrate with ~45-nm-sized pores provided ~2.6 times smaller pore size than the AAO substrate with ~95-nm-sized pores, and the deposition pressure of ~4 mTorr provided ~1.3 times smaller pore size than that of ~48 mTorr. On the AAO substrate with ~65-nm-sized pores, the Ni BEL deposited for 400 seconds had ~2 times smaller pore size than the Ni BEL deposited for 100 seconds.

• Journal of the Korean institute of surface engineering
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• v.19 no.3
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• pp.92-108
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• 1986

An electroplating on the lead frame fabricated from domestic copper plate was studied experimentally. In this study, nickel was plated on the thin copper lead frame and silver layer was coated on the nickel film in the cyanide electrolyte. The effect of process variables such as current density, plating time, coating thickness and flow rate of electrolytic solution on the properties of coating was investigated. Some samples on each step were fabricated during electroplating. The results obtained from polarization measurement, observation of SEM photograph, adhesion test of coating and microhardness test are as follows. On silver plating, polarization resistance of potentiostatic cathodic polarization curve is reduced as the flow rate of Ag electrolytic solution increases. And above resistance is also reduced when the minor chemicals of sodium cyanide and sodium carbonate are added in potassium silver cyanide bath. The reduced polarization resistance makes silver deposition on the cathode easy. An increase in the current density and the coating thickness causes the particle size of deposit to coarsen, and consequently the Knoop microhardness of the coating decreases. On selective plating an increase in the flow rate of plating solution lead to do high speed plating with high current density. In this case, the surface morphology of deposit is of fine microstructure with high Knoop hardness. An increasing trend of the adhesion of coating was shown with increasing the current density and flow rate of electrolytic solution.

• The korean journal of orthodontics
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• v.51 no.4
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• pp.270-281
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• 2021

Objective: The aim of this in vitro study was to evaluate the changes in friction between orthodontic brackets and archwires coated with aluminum oxide (Al₂O₃), titanium nitride (TiN), or chromium nitride (CrN). In addition, the resistance of the coatings to intraoral conditions was evaluated. Methods: Stainless steel canine brackets, 0.016-inch round nickel-titanium archwires, and 0.019 × 0.025-inch stainless steel archwires were coated with Al₂O₃, TiN, and CrN using radio frequency magnetron sputtering. The coated materials were examined using scanning electron microscopy, an X-ray diffractometer, atomic force microscopy, and surface profilometry. In addition, the samples were subjected to thermal cycling and in vitro brushing tests, and the effects of the simulated intraoral conditions on the coating structure were evaluated. Results: Coating of the metal bracket as well as nickel-titanium archwire with Al₂O₃ reduced the coefficients of friction (CoFs) for the bracket-archwire combination (p < 0.01). When the bracket and stainless steel archwire were coated with Al₂O₃ and TiN, the CoFs were significantly lower (0.207 and 0.372, respectively) than that recorded when this bracket-archwire combination was left uncoated (0.552; p < 0.01). The friction, thermal, and brushing tests did not deteriorate the overall quality of the Al₂O₃ coatings; however, some small areas of peeling were evident for the TiN coatings, whereas comparatively larger areas of peeling were observed for the CrN coatings. Conclusions: Our findings suggest that the CoFs for metal bracket-archwire combinations used in orthodontic treatment can be decreased by coating with Al₂O₃ and TiN thin films.

• Korean Journal of Metals and Materials
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• v.49 no.10
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• pp.811-817
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• 2011

In this study, we have investigated the role of a metal oxide hole injection layer (HIL) between an Indium Tin Oxide (ITO) electrode and an organic hole transporting layer (HTL) in organic light emitting diodes (OLEDs). Nickel Oxide films were deposited at different deposition times of 0 to 60 seconds, thus leading to a thickness from 0 to 15 nm on ITO/glass substrates. To study the influence of NiO film thickness on the properties of OLEDs, the relationships between NiO/ITO morphology and surface properties have been studied by UV-visible spectroscopy measurements and AFM microscopy. The dependences of the I-V-L properties on the thickness of the NiO layers were examined. Comparing these with devices without an NiO buffer layer, turn-on voltage and luminance have been obviously improved by using the NiO buffer layer with a thickness smaller than 10 nm in OLEDs. Moreover, the efficiency of the device ITO/NiO (< 5 nm)/NPB/$Alq_3$/ LiF/Al has increased two times at the same operation voltage (8V). Insertion of a thin NiO layer between the ITO and HTL enhances the hole injection, which can increase the device efficiency and decrease the turn-on voltage, while also decreasing the interface roughness.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.1013-1019
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• 1995

The thin plate of Co-Ni-P was deposited on the polyester film by the electroless plating method. Through present experiments, deposition rates and metal compositions of the plates were determined according to compositions of solution, pH and temperature. Also, magnetic properties of plates were examined according to metal compositions. Considering magnetic properties and deposition rates of electroless plating, the best condition was obtained as pH of 8.5 and 90℃. It was observed that metal compositions were evidently varied by the pH of solutions and the concentration of complex agents. However. they were not affected by other factors. At the optimum condition, the composition of the plate was Co(78%), Ni(16%), and P(6%). Also, it was found that the coercive force was 370 Oe, and squareness was 0.65 at this condition. Magnetic properties (hard or soft) of thin plates were determined by metal compositions. Therefore. the plate became soft magnetic plate as the composition of nickel increased over 30 per cents. The crystal structure of the soft magnetic plate was found to be amorphous in which it was strongly oriented to the (111)phahe of nickel. On the ohter hand, the hard magnetic place was found to be hcp crystalline of α-cobalt which was oriented to the (101)phase of cobalt and the (100)phase of cobalt.

• Journal of the Korean Society for Nondestructive Testing
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• v.32 no.1
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• pp.41-46
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• 2012

As the development of MEMS/NEMS structure and application technology the demand for an assessment of the mechanical properties have increased. The mechanical properties are mainly evaluated by using tensile test or ultrasonic wave measurement. However, the new technology have been developed such as nano-indentation, guided wave method because they have a limitation in case of a thin plate and thin film. In the study, the guided wave velocities are measured by electromagnetic-acoustic transducer(EMAT), the material properties of thin metallic foils are obtained using optimization process of the theoretical and experimental group velocity of guided wave. The Young's modulus obtained by the optimization process(201.6 GPa), nano-indentation(207.0 GPa) and literature value(203.7 GPa) of a $50{\mu}m$ thick nickel thin plate shows good agreement within 3%.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.19-24
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• 1996

The phase distribution and interface chemistry by the solid-state reaction between SiC and nickel were studied at temperatures between $550 \;and\; 1250^{\circ}C$ for 0.5-100 h. The reaction with the formation of silicides and carbon was first observed above $650^{\circ}C$. At $750^{\circ}C$, as the reaction proceeded, the initially, formed $Ni_3Si_2$ layer was converted to $Ni_2$Si. The thin nickel film reacted completely with SiC after annealing at $950^{\circ}C$ for 2 h. The thermodynamically stable $Ni_2$Si is the only obsrved silicide in the reaction zone up to $1050^{\circ}C$. The formation of $Ni_2$Si layers with carbon precipitates alternated periodically with the carbon free layers. At temperatures between $950^{\circ}C$ and $1050^{\circ}C$, the typical layer sequences in the reaction zone is determined by quantitative microanalysis to be $SiC/Ni_2$$Si+C/Ni_2$$Si/Ni_2$$Si+C/…Ni_2$Si/Ni(Si)/Ni. The mechanism of the periodic band structure formation with the carbon precipitation behaviour was discussed in terms of reaction kinetics and thermodynamic considerations. The reaction kinetics is proposed to estimate the effective reaction constant from the parabolic growth of the reaction zone.