• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.83-90
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• 2017

In this paper, we evaluated the solderability of thin electroless nickel-electroless palladium-immersion gold (ENEPIG) plating layer for fine-pitch package applications. Firstly, the wetting behavior, interfacial reactions, and mechanical reliability of a Sn-3.0Ag-0.5Cu (SAC305) solder alloy on a thin ENEPIG coated substrate were evaluated. In the wetting test, maximum wetting force increased with increasing immersion time, and the wetting force remained a constant value after 5 s immersion time. In the initial soldering reaction, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) and P-rich Ni layer formed at the SAC305/ENEPIG interface. After a prolonged reaction, the P-rich Ni layer was destroyed, and $(Cu,Ni)_3Sn$ IMC formed underneath the destroyed P-rich Ni layer. In the high-speed shear test, the percentage of brittle fracture increased with increasing shear speed.

• Journal of environmental and Sanitary engineering
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• v.18 no.3 s.49
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• pp.35-42
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• 2003

The electric resistance and constant current were investigated on the nickel-thallium-phosphorus alloy deposits by electroless-plating. The Ni-Tl-P alloy deposits were achieved with a bath using sodium hypophosphit as the reducing agent and sodium citrate as the comlexing agent. The basic plating solution is composed of 0.1M NiSO$_4$, 0.005${\sim}$0.0IM Tl$_2$S0$_4$, 0.1${\sim}$O.2M sodium hypophosphite and 0.02${\sim}$O.IM sodium citrate and the plating condition were pH 5${\sim}$6, temperrature 80$_4$90${\circ}$C. The results obtained are summarized as follows: 1) The crystal structure of deposit was amorphous structure as deposited state, became microcrystallized centering on Ni(111) plane by heat treatment at 200${\circ}$C, and grew as polycrystalline Ni, Ni$_3$P, Ni$_5$p$_2$,Tl, etc. by heat treatment higher than 350${\circ}$C. The grain size of plated deposits was grown up to 28.3~42.0nm by heat treatment for 1hour at 500${\circ}$C. 2) The electrical resistivity showed a comparatively high value of 192.5$_4$208.3 ${\mu}$${\Omega}$Cm and its thermal stability was great with resistivity value less than 0.22% in the thermal surroundings of 200${\circ}$C. 3) Ni-Tl-P alloy deposit showed such good constant current-making-effect in the variation of electric voltage, heat treatment temperature, and the composition of the deposit that it can be put to practical use as the matter of constant current device.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.13-21
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• 1999

Flip chip assembly directly on organic boards offers miniaturization of package size as well as reduction in interconnection distances resulting in a high performance and cost-competitive Packaging method. This paper describes the investigation of alternative low cost flip-chip mounting processes using electroless Ni/Au bump and anisotropic conductive adhesives/films as an interconnection material on organic boards such as FR-4. As bumps for flip chip, electroless Ni/Au plating was performed and characterized in mechanical and metallurgical point of view. Effect of annealing on Ni bump characteristics informed that the formation of crystalline nickel with $Ni_3$P precipitation above $300^{\circ}C$ causes an increase of hardness and an increase of the intrinsic stress resulting in a reliability limitation. As an interconnection material, modified ACFs composed of nickel conductive fillers for electrical conductor and non-conductive inorganic fillers for modification of film properties such as coefficient of thermal expansion(CTE) and tensile strength were formulated for improved electrical and mechanical properties of ACF interconnection. The thermal fatigue life of ACA/F flip chip on organic board limited by the thermal expansion mismatch between the chip and the board could be increased by a modified ACA/F. Three ACF materials with different CTE values were prepared and bonded between Si chip and FR-4 board for the thermal strain measurement using moire interferometry. The thermal strain of ACF interconnection layer induced by temperature excursion of $80^{\circ}C$ was decreased with decreasing CTEs of ACF materials.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.07a
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• pp.95-99
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• 2001

Cu is considered as a promising alternative interconnection material to Al-based interconnection materials in Si-based integrated circuits due to its low resistivity and superior resistance to the electromigration. New humping and UBM material systems for solder flip chip interconnection of Cu pads were investigated using electroless-plated copper (E-Cu) and electroless-plated nickel (E-Ni) plating methods as low cost alternatives. Optimally designed E-Ni/E-Cu UBM bilayer material system can be used not only as UBMs for solder bumps but also as bump itself. Electroless-plated E-Ni/E-Cu bumps assembled using anisotropic conductive adhesives on an organic substrate is successfully demonstrated and characterized in this study

• The Korean Journal of Ceramics
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• v.7 no.2
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• pp.74-79
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• 2001

Alumina composite reinforced by chopped alumina fiber was fabricated by filter-pressing the fiber slurry followed by the infiltration of alumina slurry. The chopped fiber was coated with nickel by electroless plating method. The green samples were densified by hot-pressing. Microstructures were studied by SEM and the mechanical properties such as bending strength and fracture toughness were measured. The resulting mechanical properties were analyzed in relation with processing parameters such as preform density and resulting microstructures. The load-displacement curve of the specimen with Ni interlayer but without Ni inclusion showed brittle fracture mode due to the direct contact between matrix and fiber. The load-displacement curve of the specimen with Ni interlayer and Ni inclusion in the matrix which is introduced by high applied pressure during specimen preparation showed non-brittle fracture mode due to the fiber pull-out and dutile phases in the matrix.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1352-1355
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• 2004

We have applied front contact metallization of plated nickel and copper for high efficiency passivated emitter rear contact(PERC) solar cell. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. The plating technique is a preferred method for commercial solar cell fabrication because it is a room temperature process with high growth rates and good morphology. In this system, the electroless plated Ni is utilized as the contact to silicon and the plated Cu serves as the primary conductor layer instead of traditional solution that are based on Ti/Pd/Ag contact system. Experimental results are shown for over 20 % PERC cells with the Plated Ni/Cu contact system for good performance at low cost.

• Journal of the Korean Electrochemical Society
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• v.10 no.2
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• pp.88-93
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• 2007

Nano-sized Sn particles were coated with Ni-P layer using an electroless deposition method and their anodic performance was tested for lithium secondary batteries. Uniform coating layers were obtained, of which the thickness was controlled by varying the $Ni^{2+}$ concentration in the plating bath. It was found that the Ni-P layer plays two important roles in improving the anodic performance of Sn powder electrode. First, it prevents the inter-particle aggregation between Sn particles during the charge/discharge process. Second, it provides an electrical conduction pathway to the Sn particles, which allows an electrode fabrication without an addition of conductive carbon. A pseudo-optimized sample showed a good cyclability and high capacity ($>400mAh\;g^{-1}$) even without conductive carbon loading.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.281-285
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• 2001

This technology Provides an economical Production of high value added goods applicable to electro chemicals by recycling of waste products in EGL(Electro Galvanizing Line). The waste products produced in EGL contain potassium chloride (KCI), nickel and zinc. Highly pure KCI and Zinc Chloride which are raw material of electro plating, can be produced by the development of the recycling process. The scope of this study ranges from laboratory experiments to pilot test in plant. We have developed the whole process of recycling technology such as purification method of waste products, fabrication methods of electro chemicals, basic design of plant, pilot scale production and evaluation of pilot goods, Developed electro chemicals were pure enough to satisfy the specification of steel company.

• Corrosion Science and Technology
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• v.2 no.4
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• pp.197-201
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• 2003

In this study, Ni-P layers were electroplated on the surface of stainless steel in order to investigate the effects of an additive and agitation on their mechanical properties and microstructure. The concentration of the additive in the plating solution increased, the pores formed in the layer decreased, while the residual stress developed in the layers during electroplating increased. Agitation of the solution during electroplating was observed to force to increase local pores in the layer, which lowers its tensile properties. Grain growth was suppressed due to very fine $Ni_3P$ precipitates formed at its grain boundaries during heat treatment at $343^{\circ}C$ for 1 hr in air.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.99-99
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• 2018

본 연구는 무전해 니켈 도금 공정에서 고연성을 요구하는 Flexible 기판상에 많이 사용되어지고 있는 무전해 니켈 도금액 평가에 관한 것이다. 무전해 도금을 이용하여 도금된 표면은 다양한 패키징 분야에서의 높은 밀도를 가지는 초소형 소자 등의 실장 표면이나 접합 계면으로 사용되고 있는 등 부품 소재 산업에서의 중요성이 점차 증가되고 있다. 고연성 무전해 Ni-P 도금개발을 통하여 얻고자하는 기술적 과제는 도금층에 높은 연성을 제공하고 안정성이 향상된 무전해 니켈 도금액을 제공하는 것이다.