• 전기화학회지
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• 제19권1호
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• pp.1-8
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• 2016

층상구조 삼성분계 $LiNi_{1-x-y}Co_xMn_yO_2$ 양극활물질을 4.3 V 이상 고전압으로 충전시키면 용량 증가를 기대할 수 있으나 기존 전해액의 산화안정성이 낮아 고전압 성능 구현에 제한이 있다. 본 연구에서는 설폰계 전해액 첨가제인 dimethyl sulfone (DMS), diethyl sulfone (DES), ethyl methyl sulfone (EMS)을 사용하여 $LiNi_{0.5}Co_{0.2}Mn_{0.3}O_2$ 양극의 고전압 특성을 향상시키고자 한다. 본 논문은 다양한 선형 sulfone계 첨가제가 포함된 전해액에서 3.0-4.6 V 전압범위에서 양극의 충방전 특성과 양극-전해액간 계면거동과 표면층 분석에 대한 내용으로 이루어져 있다. 특히 Dimethyl sulfone (DMS) 첨가제 사용시, 50 사이클 중 $198-173mAhg^{-1}$의 방전 용량과 87%의 용량유지율을 보여 기존 전해액 대비 상당히 향상된 충방전 안정성을 보였다. 표면조성 분광분석 결과, DMS 첨가제 사용시 양극에 안정한 표면보호층이 형성되고 금속 용출이 억제되어 고전압 충방전 특성이 향상되었음 알 수 있었다.

• 방사선산업학회지
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• 제8권3호
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• pp.141-146
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• 2014

Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a $^{63}Ni$ plating condition on the PN junction semiconductor needed for production of beta-voltaic battery. PN junction semiconductors with a Ni seed layer of 500 and $1000{\AA}$ were coated with Ni at current density from 10 to $50mA\;cm^{-2}$. The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased. The results showed that the optimum surface shape was obtained at a current density of $10mA\;cm^{-2}$ in seed layer with thickness of $500{\AA}$, $20mA\;cm^{-2}$ of $1000{\AA}$. Also, pure Ni deposit was well coated on a PN junction semiconductor without any oxide forms. Using the line width of (111) in XRD peak, the average grain size of the Ni thick firm was measured. The results showed that the average grain size was increased as the thickness of seed layer was increased.

• 한국세라믹학회지
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• 제50권1호
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• pp.63-69
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• 2013

Negative-temperature coefficient (NTC) thermistors based on nickel manganite spinel ($NiMn_2O_4$) are widely used for many applications, such as sensors and temperature compensators, due to their good thermistor characteristics and stabilities. However, to achieve thermistors with a high NTC B constant, which is an important figure of merit pertaining to the degree of temperature sensitivity, the activation energy should be high such that high resistivity at ambient temperatures results. To obtain a high B constant and low resistivity, Al and Si modified spinel structured $Ni_{0.6}Si_{0.2}Al_{0.6}Mn_{1.6}O_4$ hybrid thick films with the conducting metal oxide of $LaNiO_3$ were fabricated on a glass substrate by aerosol deposition at room temperature (RT). The NTC-$LaNiO_3$ hybrid thick films showed resistivity as low as < $100k{\Omega}\;cm$ at $90^{\circ}C$, which is one or two orders of magnitude lower than that of the monolithic NTC films, while retaining a high B constant of $NiMn_2O_4$ of over 5500 K when 20 wt% $LaNiO_3$ was added without a post-thermal treatment. These phenomena are explained by the percolation threshold mechanism.