• 제목/요약/키워드: NiTi thin film

검색결과 55건 처리시간 0.028초

Co-sputtering에 의해 증착된 TiNi 박막의 미세조직 및 기계적성질에 미치는 어닐링 열처리 효과 (Effects of Annealing Treatments on Microstructure and Mechanical Property of co-sputtered TiNi Thin Film)

  • 박수대;백창현;홍주화
    • 열처리공학회지
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    • 제21권1호
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    • pp.26-32
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    • 2008
  • Effects of annealing treatment on microstructure and mechanical property of co-sputtered TiNi thin films were studied. As-deposited films showed amorphous state. However, above annealing temperature of $500^{\circ}C$ martensite phase (B19'), precipitate phase ($Ti_2Ni$) and a small amount of parent phase ($B_2$) were present, and phase transformation behaviors were three multi-step phase transformations $B19^{\prime}{\rightarrow}B_2$ and $B_2{\rightarrow}R-phase$ and $R-phase{\rightarrow}B19^{\prime}$. Increase of martensite transformation temperature, increase of microhardness and Young's modulus of TiNi films annealed above $500^{\circ}C$ were discussed in terms of precipitate phase.

DC 마그네트론 스퍼터링법에 의해 제조한 TiNi 박막의 증착조건에 관한 연구 (A Study on the Deposition Conditions of the TiNi Thin Film by DC Magnetron Sputtering)

  • 최대철;한범교;남태현;안효준
    • 한국수소및신에너지학회논문집
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    • 제10권4호
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    • pp.211-217
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    • 1999
  • 수소저장합금 전극을 이용하는 박막전지의 제조를 위하여, TiNi 수소저장합금박막의 적정제조조건에 대하여 연구하였다. TiNi합금박막은 직류 스퍼터링을 이용하여 제조하였다. 증착변수인 아르곤유속, 타겔-기판거리, 직류 전력량등을 변화시키면서, 증착속도를 조사하였으며, Ti와 Ni의 화학조성비, 결정구조등을 조사하였다. 증착속도는 아프곤유속, 타겔 기판거리와 반비례하였으며, 직류전력량의 증가에는 정비례하여 증가하였다. 상온에서 증착후에는 비정질구조를 나타냈으나, 진공열처리 후에 결정질로 바뀌었다.

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Ar가스 분위기에서 PLD방법으로 제작된 TiNi박막의 조성 및 결정성에 관한 연구 (Study on the Composition and Crystallization of TiNi Thin Films Fabricated by Pulsed Laser Deposition in Ambient Ar Gas)

  • 차정옥;신진호;여승준;안정선;남태현
    • 한국진공학회지
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    • 제16권2호
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    • pp.116-121
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    • 2007
  • Ti-50 at. % Ni 합금 타깃으로 PLD(pulsed laser deposition)방법을 사용하여 TiNi 형상기억합금 박막을 제작하였다. Ar분위기(200 mTorr)와 고진공분위기($5{\times}10^{-6}\;Torr$)에서 제작한 TiNi 박막의 조성 및 결정성의 변화를 조사했으며, 박막의 조성은 에너지 분산 엑스선 분광 분석(EDXS)을 이용하여 조사하였고, 박막의 결정성은 엑스선 회절장치(XRD)를 이용하여 조사하였다. 박막의 조성은 기판과 타깃의 거리에 의존되었지만, 기판의 온도와는 무관함을 알 수 있었으며, Ar 분위기에서 플룸 안쪽에 기판이 위치하였을 때 조성 제어가 용이함을 알 수 있었다. 또한, Ar 가스 분위기에서 증착 된 TiNi 박막은 고진공분위기에서 증착된 박막보다 더 낮은 온도(약 $400^{\circ}C$)에서 in situ로 결정화됨을 알 수 있었다. 이들 결과는, PLD방법으로 TiNi 형상기억합금 박막을 제작할 때 분위기 가스의 압력이 결정화 온도를 낮추어 주는 중요한 역할을 할 수 있음을 시사한다.

초고주파 응용을 위한 (100) 방향으로 성장된 PST / $LaNiO_3$박막의 구조적, 유전적 특성 (Dielectric and Structural properties of highly oriented $PST/LaNiO_3$ Thin Films for Microwave application)

  • 엄준철;이성갑;김창일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.648-651
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    • 2004
  • Pb0.5Sr0.5TiO3(PST) thin films were deposited on the LaNiO3 (LNO(100))/Si and Pt/Ti/SiO2/Si substrates by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. The PST films, which were directly grown on the Pt/Ti/SiO2/Si substrates showed the random orientation. For the LNO/Si substrates, the PST thin films exhibited highly (100) orientation. Compared with randomly oriented films, the highly (100)-oriented PST thin films showed better dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress and the in-plane oriented Polar axis depending on the substrate was used. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the LNO/Si substrates measured at 1 MHz were 483, 0.002, and 60.1%, respectively.

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Thin Films for Environmental Application and Energy Devices

  • Kim, Young-Dok
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.91-91
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    • 2012
  • We aim in synthesizing various functional thin films thinner than ~ 10 nm for environmental applications and photovoltaic devices. Atomic layer deposition is used for synthesizing inorganic thin films with a precise control of the film thickness. Several examples about application of our thin films for removing volatile organic compounds (VOC) will be highlighted, which are summarized in the below. 1) $TiO_2$ thin films prepared by ALD at low temperature ($<100^{\circ}C$) show high adsorption capacity for toluene. In combination with nanostructured templates, $TiO_2$ thin films can be used as building-block of high-performing VOC filter. 2) $TiO_2$ thin films on carbon fibers and nanodiamonds annealed at high temperatures are active for photocatalytic oxidation of VOCs, i.e. photocatalytic filter can be created by atomic layer deposition. 3) NiO can catalyze oxidation of toluene to $CO_2$ and $H_2O$ at $<300^{\circ}C$. $TiO_2$ thin films on NiO can reduce poisoning of NiO surfaces by reaction intermediates below $200^{\circ}C$. We also fabricated inverted organic solar cell based on ZnO electron collecting layers on ITO. $TiO_2$ thin films with a mean diameter less than 3 nm on ZnO can enhance photovoltaic performance by reducing electron-hole recombination on ZnO surfaces.

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Possibility of Magnetocapacitor for Multilayered Thin Films

  • Hong, Jong-Soo;Yoon, Sung-Wook;Kim, Chul-Sung;Shim, In-Bo
    • Journal of Magnetics
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    • 제17권2호
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    • pp.78-82
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    • 2012
  • CoNiFe(CNF)/$BaTiO_3(BTO)$/CoNiFe(CNF) multilayered thin films were deposited on Pt/Ti/$SiO_2$/Si substrates by using pulsed laser deposition (PLD) system. We fabricated three different thin films of BTO, BTO/CNF and CNF/BTO/CNF for magneto-capacitor and studied their crystalline structure, surface and interface morphology, and magnetic and electrical properties. When three different structures of multilayered thin film were compared, magnetization of CNF/BTO/CNF thin films was decreased by magnetic and dielectric interaction. Also we confirmed that capacitance of CNF/BTO/CNF multilayered thin film was enhanced as being near tetragonal structure with increasing of c/a ratio because of atomic bonding at interface between BTO dielectric and CNF magnetic materials. Finally, we studied the change of the capacitance of CNF/BTO/CNF multilayered thin film with magnetic field for emergence of magnetocapacitance and suggested a possibility of enhanced capacitance.

Development of High-Efficient Organic Solar Cell With $TiO_2$/NiO Hole-Collecting Layers Using Atomic Layer Deposition

  • Seo, Hyun Ook;Kim, Kwang-Dae;Park, Sun-Young;Lim, Dong Chan;Cho, Shinuk;Kim, Young Dok
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.157-158
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    • 2013
  • Organic solar cell was fabricated using one-pot deposition of a mixture of NiO nanoparticles, P3HT and PCBM. In the presence of NiO, the photovoltaic performance was slightly increased comparing to that of the device without NiO. When $TiO_2$ thin films with a thickness of 2~3 nm was prepared on NiO nanoparticles using atomic layer deposition, the power conversion efficiency was increased by a factor 2.5 with respect to that with bare NiO. Moreover, breakdown voltage of the film consisting of NiO, P3HT, and PCBM on indium tin oxide was increased by more than 1 V in the presence of $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidized on NiO surfaces, and $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidzed on NiO surfaces, and $TiO_2$ shell heavily reduced oxidation of S at oxide/P3HT interfaces. Oxidized S atoms can most likely act as carrier generation sites and recombination centers within the depletion region, decreasing breakdown voltage and performance of organic solar cells. Our result shows that fabrication of various core-shell nanostruecutres of oxides by atomic layer deposition with controlled film thickness can be of potential importance for fabricating highly efficient organic solar cells.

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Sol-Gel 법에 의한$ PbZrO_3$-$PbTiO_3$-$Pb(Ni_{1/3}Nb_{2/3})O_3$ (Electrical properties of sol-gel derived $ PbZrO_3$-$PbTiO_3$-$Pb(Ni_{1/3}Nb_{2/3})O_3$ thin film)

  • 임무열;구경완;한상옥
    • E2M - 전기 전자와 첨단 소재
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    • 제10권2호
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    • pp.134-140
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    • 1997
  • PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.

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보자력 향상을 위한 Ti/CoCrPt박막의 하지층 (Underlayer for Coercivity Enhancement of Ti/CoCrPt Thin Films)

  • 장평우
    • 한국자기학회지
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    • 제12권3호
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    • pp.94-98
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    • 2002
  • 20nm이하의 얇은 박막에서도 높은 보자력이 요구되는 Ti/CoCrPt 수직자기기록박막의 보자력 향상을 위해 Al, Cu, Ni, Cr, Ag, Mg, Fe, Co, Pd, Au, Pt, Mo, Hf등의 여러 하지층과 제조조건이 보자력에 미치는 영향을 조사하였다 이들 중 Ag과 Mg하지층은 Ti/CoCrPt박막의 보자력을 향상시켰으며 특히 2nm Ag 하지층을 사용할 경우 10nm CoCrPt 박막에서 2200 Oe의 높은 보자력을 보일뿐 아니라 $\alpha$값을 낮추는 효과가 있었다. 그러나 Ag를 하지층으로 사용하면 기대와는 달리 Ti(002)면의 우선배향 성장이 전혀 일어나지 않아 보자력 증대에 다른 기구가 작용하는 것으로 판단되었다. 그리고 표면의 거칠기가 큰 기판에서는 보자력뿐만 아니라 역자구생성자계도 감소하였다.