• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.105-109
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• 2002

The wet etching characteristics of magnetic materials such as NiFe and CoFe were investigated in terms of etch rate and etch profile by using variouus etching solutions (etchants). Among the various etching solutions, HNO$_3$, HCl, and H$_2$SO$_4$were selected for the etching of magnetic materials and showed distinct results. In the case of NiFe films, faster etch rate were obtained with HNO$_3$solution. When NiFe films ere etched with HCl solution, white etch residues were found on the surface of etched films. From FEAES analysis of these etch residues, they were proved to be by-product from the reaction of NiFe with Cl element. CoFe thin films showed the similar trend to the case of NiFe films. They were etched fast in HNO$_3$ solution while Chl solution represented slow etching. The etch profiles of CoFe films showed smooth etch profile but revealed the partial etching around the patterns in HNO$_3$solution of relatively high concentration. It was observed that the etched surface was clean and smooth, and that white etch residues were also remained on the etched films.

• Korean Journal of Materials Research
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• v.28 no.10
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• pp.595-600
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• 2018

This study investigates the microstructural properties of CoCrFeMnNi high entropy alloy (HEA) oxynitride thin film. The HEA oxynitride thin film is grown by the magnetron sputtering method using nitrogen and oxygen gases. The grown CoCrFeMnNi HEA film shows a microstructure with nanocrystalline regions of 5~20 nm in the amorphous region, which is confirmed by high-resolution transmission electron microscopy (HR-TEM). From the TEM electron diffraction pattern analysis crystal structure is determined to be a face centered cubic (FCC) structure with a lattice constant of 0.491 nm, which is larger than that of CoCrFeMnNi HEA. The HEA oxynitride film shows a single phase in which constituting elements are distributed homogeneously as confirmed by element mapping using a Cs-corrected scanning TEM (STEM). Mechanical properties of the CoCrFeMnNi HEA oxynitride thin film are addressed by a nano indentation method, and a hardness of 8.13 GPa and a Young's modulus of 157.3 GPa are obtained. The observed high hardness value is thought to be the result of hardening due to the nanocrystalline microstructure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.73-82
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• 1998

The exchange anisotropy is the unidirectional magnetic anisotropy which comes from exchange interaction between antiferromagnetic layer and ferromagnetic layer. The application of this phenomenon to MR read head and spin-valve type GMR (Giant Magnetoresistance) head has been studied extensively. In our study, we intended to apply exchange anisotropy of NiO/NiFe bilayer to spin-valve type GMR element. Above all, we studied the exchange anisotropy of NiO/NiFe bilayer, and focused especially on the effect of NiO deposition condition. And we found that Ar pressure during NiO deposition was crucial factor for the exchange anisotropy of NiO/NiFe bilayer. The lower the Ar pressure is, the better the characteristics of exhange anisotropy is. Then, we applied this optimum condition of NiO/NiFe bilayer to spin-valve type GMR element. Finally we got spin-valve type GMR element which had 3.6 % MR ratio, 16 Oe switching field, and 0.25 %/Oe sensitivity.

• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.143-144
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• 2014

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.71-71
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• 2009

This paper describes a simple, on-chip CMOS compatible the thin-film inductor applied for the dc-dc converters. A fully CMOS-compatible thin-film inductor with a bottom NiFe core is integrated with the DC-DC converter circuit on the same chip. By eliminating ineffective top magnetic layer, very simple process integration was achieved. Fabricated monolithic thin film inductor showed fairly high inductance of 2.2 ${\mu}H$ and Q factor of 11.2 at 5MHz. When the DC-DC converter operated at $V_{in}=3.3V$ and 5MHz frequency, it showed output voltage $V_{out}=8.0V$, and corresponding power efficiency was 85%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.478-483
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• 2005

In this paper, we synthesized 10 to 20 nm diameter NiFe nanoparticles and nanoparticle films utilizing supersonic jet deposition of nanoparticle aerosols generated by laser ablation of $30\;to\;45{\mu}m$ diameter permalloy $(Ni_{81}Fe_{19} \;at\;{\%})$ microparticles. The component and composition of the nanoparticles were characterized by an energy dispersive X-ray spectroscopy. The morphology of the nanoparticles and nanoparticle films was analyzed by a high-resolution transmission electron microscopy and a scanning electron microscopy, respectively. The experimental results showed that the nanoparticles and nanoparticle films have remarkable properties with an excellent preservation of the composition of feedstock permalloy microparticles. The purpose of the present work is to present details on the composition and nanostructural characterizations for NiFe nanoparticles and nanoparticle films prepared by laser ablation of microparticles (LAM).

• Journal of the Korean Magnetics Society
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• v.7 no.3
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• pp.146-151
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• 1997

Buffer (t $\AA$)/ CoFe(35$\AA$)/Cu (50$\AA$)/Co (35$\AA$) sandwiches prepared by dc magnetron sputtering on Corning glass substrates using the $Co_{90}Fe_{10}$ and Co layers with different coercivities. Dependence of magnetoresistance on the type and thickness of buffer layers, and on the thickness of Cu and the magnetic layers in buffer/ CoFe/Cu /Co sandwiches were investigated. Magnetoresistance ratio and saturation field $H_s$ increased as thickness of the buffer layer becomes thicker, then decreased smoothly after a maximum value. An improved filed sensitivity was realized with the $Ni_{81}Fe_{19}$ buffer layer.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.116.2-116.2
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• 2011

연성 CIGS 태양전지를 제작하기 위해서는 휘어지는 연성 기판재의 적용이 반드시 필요하다. 상용되는 연성 기판재로는 플라스틱, 폴리이미드, 금속재가 있다. 그러나 플라스틱과 폴리이미드는 고효율의 CIGS 흡수층을 제조하기 위한 $500{\sim}600^{\circ}C$의 공정에 접합하지 못하다. 금속 기판재의 경우는 몰리브데늄, 알루미늄, 티타늄, 크롬강, 스테인레스강, 합금재 등이 있다. 이러한 금속 기판재 중에서 Fe-Ni 합금재는 Ni 함량의 변화에 따라 기계적, 자기적, 열팽창 특성이 다르게 나타나는 것으로 알려져 있다. 선행 연구에서 CIGS 태양전지의 기판재로 열팽창 계수가 박막층과 유사한 SUS400번 계열과 Fe-52Ni이 적합하다는 것을 확인 하였다. 따라서 본 연구에서는 유한요소해석(Finite element analysis) 프로그램인 Algor를 이용하여 CIGS solar cell을 설계하고 Fe-52Ni 기판재와 절연층인 SiO2, 흡수층인 CIGS의 두께에 따른 Cell의 잔류응력을 해석하였다.

• Journal of the Korean Magnetics Society
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• v.5 no.6
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• pp.968-973
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• 1995

In order to investigate the annealing effect for RF magnetron sputtered $Ni_{83}Fe_{17}$ thin films, we have studied the spin wave rehaviors by FMR after annealing the samples at $135^{\circ}C,\;225^{\circ}C$ in air and at $160^{\circ}C,\;220^{\circ}C,\;330^{\circ}C,\;390^{\circ}C\;and\;420^{\circ}C$ in argon gas for one hour respectively. In FMR spectra for the films annealed in argon gas and the assputtered film at perpendicular resonance, only odd numrer spin waves are observed. But even numrer spin waves are observed for the film annealed in air at $225^{\circ}C$ recause of the large difference retween both surface magnetic anisotropy. In the case of the sample annealed at $420^{\circ}C$ in argon gas, the spin waves are shifted toward high field, can due to the increase of saturation magnetization during annealing. The spacings retween the spin wave resonance fields are narrowed rapidly, this is thought that the magnetic homogeneity increased in the film after annealing at high temperature.

• Journal of the Korean Magnetics Society
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• v.5 no.3
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• pp.203-209
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• 1995

A study of the dependence of the magnetoresistance in $glass\[Cu_{x\AA}\NiFe_{50\AA}\Cu_{x\AA}\Co_{50\AA}](X;\=\;8,\;10,\;14,\;18,\;22,\;26,\;28,\;38,\;48,\;58\;\AA,\;N\;=\;2,\;3,\;4,\;10,\;20)$ multilayers prepared by dc magnetron sputtering on the interlayer thickness of Cu (X), the number of multylayer(N) and annealing temperature has been performed. Resistance measurement were made by four terminal method, and the magnetic field applied to perpendicular and parallel for the current. The maximum magnetoresistance(MR) ratio(%) was appeared in the vicinity of $10\;\AA$ in Cu layer, and it was oscillated with the thickness of Cu. The MR ratio was increased with the number of layers N, however the ratio for the N = 4 layers decreased rather than the N = 3 layers. The dependence of the ratio on the annealing temperature was increased to $250^{\circ}C$.