• Journal of the Korean institute of surface engineering
• /
• v.54 no.2
• /
• pp.43-52
• /
• 2021

The Ni-based superalloy, Inconel 740, was corroded between 800 and 1100℃ for up to 100 hr in air and Ar-0.2%SO₂ gas in order to study its corrosion behavior in air and sulfur/oxygen environment. It displayed relatively good corrosion resistance in both environment, because its corrosion was primarily dominated by not sulfidation but oxidation especially in Ar-0.2%SO₂ gas. Such was attributed to the thermodynamic stability of oxides of alloying elements when compared to corresponding sulfides. The scales consisted primarily of Cr₂O₃, together with some NiAl₂O₄, MnCr₂O₄, NiCrMnO₄, and rutile-TiO₂. Sulfur from SO₂ gas made scales prone to spallation, and thicker. It also widened the internal corrosion zone when compared to air. The corrosion resistance of IN740 was mainly indebted to the formation of protective Cr₂O₃-rich oxides, and suppression of the sulfide formation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.9
• /
• pp.924-929
• /
• 2004

The microstructure, electrical and dielectric characteristics of $ZnO-{Pr}_6{O}_11-{CoO}-{Dy}_2{O}_3$-based varistors were investigated without and with various metal oxide additives(NiO, MgO, Cr$_2$O$_3$). The average grain size decreased in the range of 18.4 $\backsim$ 11.5 $\mu$m, in order of NiO\longrightarrowMgO\longrightarrow{Cr}_2{O}_3$ and the density decreased in the range of 5.62 \backsim 5.33 $g/{cm}^3$ in order of NiO\longrightarrowCr$_2$O$_3$\longrightarrowMgO. While, the nonlinear exponent increased In the range of 19.8$\backsim$67.4 in order of NiO\longrightarrowMgO\longrightarrow${Cr}_2{O}_3$ and the leakage current decreased in the range of 25.6 $\backsim$ 1.2 $\mu$A in order of NiO\longrightarrow${Cr}_2{O}_3$\longrightarrowMgO. Among all varistors, the Cr$_2$O$_3$-added varistor exhibited the highest nonlinearity, with a nonlinear exponent of 67.4 and a leakage current of 1.2 $\mu$A. Furthermore, this varistor exhibited the lowest dielectric dissipation factor of 0.0407.

• Journal of Korean Society of Environmental Engineers
• /
• v.28 no.4
• /
• pp.368-375
• /
• 2006

Single and complex metal oxide catalysts supported onto a commercial DT51D $TiO_2$ have been investigated for gas-phase TCE oxidation in a continuous flow type fixed-bed reaction system to develop a better design approach to catalysts for this reaction. Among the $TiO_2$-supported single metal oxides used, i.e., $CrO_x,\;FeO_x,\;MnO_x,\;LaO_x,\;CoO_x,\;NiO_x,\;CeO_x\;and\;CuO_x$, with the respective metal contents of 5 wt.%, the $CrO_x/TiO_2$ catalyst was shown to be most active for the oxidative TCE decomposition, depending significantly on amounts of $CrO_x\;on\;TiO_2$. The use of high $CrO_x$ loadings greater than 10 wt.% caused lower activity in the catalytic TCE oxidation, which is probably due to production of $Cr_2O_3$ crystallites on the surface of $TiO_2$. $CrO_x/TiO_2$-supported $CrO_x$-based bimetallic oxide catalysts were of particular interest in removal efficiency for this TCE oxidation reaction at reaction temperatures above $200^{\circ}C$, compared to that obtained with $CrO_x$-free complex metal oxides and a 10 wt.% $CrO_x/TiO_2$ catalyst. Catalytic activity of 5 wt.% $CrO_x-5$ wt.% $LaO_x$ in the removal reaction was similar to or slightly higher than that acquired for the $CrO_x$-only catalyst. Similar observation was revealed for 5 wt.% $CrO_x$-based bimetallic oxides consisting of either 5 wt.% $MnO_x,\;CoO_x,\;NiO_x\;or\;FeO_x$. These results represent that such $CrO_x$-based bimetallic systems for the catalytic TCE oxidation on significantly minimize the usage of $CrO_x$ that is well known to be one of very toxic heavy metals, and offer a very useful technique to design new type catalysts for reducing chlorinated volatile organic substances.

• Korean Journal of Materials Research
• /
• v.19 no.10
• /
• pp.533-537
• /
• 2009

This paper presents a new method for the improvement of color temperature without the change of the driving scheme using transparent dielectric layers with various metal oxides (CeO$_2$, Co$_3$O$_4$, CuO, Fe$_2$O$_3$, MnO$_2$, NiO) in plasma display panels (PDP). In this study, we fabricated ZnO-B$_2$O$_3$-SiO$_2$-Al$_2$O$_3$ glasse with various metal oxides and examined the optical properties of these glasses. As the metal oxides were added to the glasses, the visible transmittances of the dielectric layers decreased and the transmittances in special wavelength regions were reduced at different rates. The change of the transmittance in each wavelength range induced the variation of the visible emission spectra and the change of the color temperature in the PDP. The addition of Co$_3$O$_4$ and CuO slightly decreased the intensity of the blue light, but the intensities of the green and the red light were significantly decreased. Therefore, the color temperature can be improved from 6087K to 7378K and 7057K, respectively.

• Journal of the Korean Society for Heat Treatment
• /
• v.29 no.5
• /
• pp.216-219
• /
• 2016

$SnO_2$ single layer films (100 nm thick) and 2 nm thick Ni intermediated $SnO_2$ films were deposited on glass substrate by RF and DC magnetron sputtering without intentional substrate heating and then the influence of the Ni interlayer on the electrical and optical properties of the films were investigated. As deposited $SnO_2$ single layer films show the optical transmittance of 82.6% in the visible wavelength region and a resistivity of $6.6{ \times}10^{-3}{\Omega}cm$, while $SnO_2/Ni/SnO_2$ trilayer films show a lower resistivity of $2.7{ \times}10^{-3}{\Omega}cm$ and an optical transmittance of 76.3% in this study. Based on the figure of merit, it can be concluded that the intermediate Ni thin film effectively enhances the opto-electrical performance of $SnO_2$ films for use as transparent conducting oxides in flexible display applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.747-750
• /
• 2003

The microstructure and nonlinear properties of ZPCMR-based varistors were investigated with various additives. The density of varistors were gradually decreased for the same R in order of NiO, MgO, and $Cr_2O_3$, respectively. The ZPCR-based varistors were not affected by NiO and MgO additives in nonlinear properties, whereas greatly affected by $Cr_2O_3$. Among the ZPCCR-based varistors, ZPCCD varistor exhibited the highest nonlinear properties, in which the nonlinear exponent is in the range of $40.5{\sim}67.4$ and the leakage current is in the range of $1.2{\sim}2.7{\mu}A$.

• Journal of Electrochemical Science and Technology
• /
• v.13 no.4
• /
• pp.497-503
• /
• 2022

Spinel ferrites (Ni_xFe_3-xO₄; x = 0.25, 0.5, 0.75 and 1.0) have been prepared at 550℃ by egg white auto-combustion route using egg white at 550℃ and characterized by physicochemical (TGA, IR, XRD, and SEM) and electrochemical (CV and Tafel polarization) techniques. The presence of characteristic vibration peaks in FT-IR and reflection planes in XRD spectra confirmed the formation of spinel ferrites. The prepared oxides were transformed into oxide film on glassy carbon electrodes by coating oxide powder ink using the nafion solution and investigated their electrocatalytic performance for OER in an alkaline solution. The cyclic voltammograms of the oxide electrode did not show any redox peaks in oxygen overpotential regions. The iR-free Tafel polarization curves exhibited two Tafel slopes (b₁ = 59-90 mV decade^-1 and b₂ = 92-124 mV decade^-1) in lower and higher over potential regions, respectively. Ni-substitution in oxide matrix significantly improved the electrocatalytic activity for oxygen evolution reaction. Based on the current density for OER, the 0.75 mol Ni-substituted oxide electrode was found to be the most active electrode among the prepared oxides and showed the highest value of apparent current density (~9 mA cm^-2 at 0.85 V) and lowest Tafel slope (59 mV decade^-1). The OER on oxide electrodes occurred via the formation of chemisorbed intermediate on the active sites of the oxide electrode and follow the second-order mechanism.

• Journal of the Korean Ceramic Society
• /
• v.41 no.8
• /
• pp.605-609
• /
• 2004

The microstructure, electrical and dielectric characteristics of ZnO varistors were investigated at various metal oxide (NiO, MgO, and Cr$_2$O$_3$) additives. The average grain size was increased with addition of NiO while that was decreased with addition of Cr$_2$O$_3$-Thereby, the varistor voltage was higher in Cr$_2$O$_3$-added composition. Among varistors, the varistor added with Cr$_2$O$_3$ exhibited the highest nonlinearity, with 40.5 in the nonlinear exponent and 2.7 ${\mu}$A in the leakage current and its dielectric dissipation factor was relatively low value of 0.0589.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09a
• /
• pp.51-52
• /
• 2006

[ $Ti_{45}Zr_{38}Ni_{17}$ ] powders were thermally sprayed onto mild steel substrates in air and under a reduced pressure of argon. Several oxides were formed after thermally-spraying the mechanically-alloyed powders in air. After spraying in a reduced pressure of argon, the coating layers obtained from the gently mixed powders consisted of the elemental metals, but an amorphous phase primarily appeared in the thermally-sprayed mechanically-alloyed powders, which transformed into the icosahedral quasicrystal phase and a minor $Ti_2Ni-type$ crystal phase after annealing at 828 K. The Vickers hardness and the contact angle with pure water for the quasicrystal layers were about 7 GPa and $92^{\circ}$ respectively.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.389.2-389.2
• /
• 2016

The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.