• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.70-77
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• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.10
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• pp.495-499
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• 2004

Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.62-72
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• 1996

The interface formation and reaction-product morphology between SiC and thin metal films were studied at temperatures between 550 and $1450^{\circ}C$ for various times. The typical reaction layer sequence was CoSi/CoSi+C/CoSi/CoSi+C/ $\cdots$ /SiC reaction at 1050 and $1250^{\circ}C$ for 2 h, while $Ni_2Si/Ni_2Si+C/Ni_2Si/Ni_2Si+C/ {\cdots} /SiC$ at 950 and 105$0^{\circ}C$ for 2 h. Carbon precipitated preferentially on the outer surface and crystallized as graphite above $1450^{\circ}C$ for SiC/Co reaction zone and $1250^{\circ}C$ for SiC/Ni. The mechanism of the periodic band structure formation with carbon precipitation behaviour was discussed in terms of thermodynamic considerations.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.776-780
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• 2001

$SiO_2$ and polycrystalline Si layers were sequentially grown on (100) Si. NiSi was formed on this substrate from a 20nm Ni layer or a 20nm Ni/5nm Ti bilayer by rapid thermal annealing (RTA) at $300~500^{\circ}C$ to compare thermal stability. In addition, MOS capacitors were fabricated by depositing a 20nm Ni layer on the Poly-Si/$SiO_2$substrate, RTA at $400^{\circ}C$ to form NiSi, $BF_2$ or As implantation and finally drive- in annealing at $500~800^{\circ}C$ to evaluate electrical characteristics. When annealed at $400^{\circ}C$, NiSi made from both a Ni monolayer and a Ni/Ti bilayer showed excellent thermal stability. But NiSi made from a Ni/Ti bilayer was thermally unstable at $500^{\circ}C$. This was attributed to the formation of insignificantly small amount of NiSi due to suppressed Ni diffusion through the Ti layer. PMOS and NMOS capacitors made by using a Ni monolayer and the SADS(silicide as a dopant source) method showed good C-V characteristics, when drive-in annealed at $500^{\circ}C$ for 20sec., and$ 600^{\circ}C$ for 80sec. respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.358-369
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• 1995

Surface structure and adhesion by the reaction between thin metal films and SiC were studied at temperatures between 550 and $1450^{\circ}C$ for various times. The reaction with the formation of various silicides was initially observed above $850^{\circ}C$ for SiC/Co system and $650^{\circ}C$ for SiC/Ni system. The cobalt reacted with SiC and consumed completely at $1050^{\circ}C$ for 0.5 h and the nickel at $950^{\circ}C$ for 2 h. The observed CoSi phase in SiC/Co and Ni$_2$Si phase in SiC/Ni are thermodynamically stable in the reaction zone up to 125$0^{\circ}C$ and $1050^{\circ}C$ respectively. Carbon was crystallized as graphite above $1450^{\circ}C$ for SiC/Co reaction surface and $1250^{\circ}C$ for SiC/Ni. The critical loads of the thin metal films on SiC substrate were qualitatively compared in terms of the scratch test method. At temperatures between 850 and $1050^{\circ}C$, relatively higher values of 20~33 N were observed for SiC/Ni couples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.493-496
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• 1999

Ni/3C-SiC 옴믹 접합에 대한 미세구조적-접합 특성과의 상관관계를 규명하였다. 3C-SiC 웨이퍼 위에 저저항 전면 옴믹 적합층을 형성하기 위하여 Ni(t=300$\AA$)을 thermal evaporator를 사용하여 증착하고, 50$0^{\circ}C$, 80$0^{\circ}C$, 103$0^{\circ}C$ 온도에서 30분간(Ar 분위기) 열처리 한 후, scratch test를 실행하여 Ni/3C-SiC의 접착력 특성을 조사하였다. 여러 다른 온도에 따른 Ni/3C-SiC 층의 표면과 계면의 미세구조는 X-ray scattering 법을 사용하였다. 50$0^{\circ}C$ 에서 열처리된 Ni/3C-SiC 층은 가장 낮은 계면 평활도와 가장 높은 표면 평활도를 나타내었다. Ni/3C-SiC 접착력 분석에서 500 $^{\circ}C$ 열처리된 시편의 측정된 임계하중 값은 As-deposited 시편(12 N~ 13 N)보다 훨씬 낮은 2 N~3 N 범위의 값을 보였으나, 열처리 온도가 증가함에 따라 다시 높아지는 경향을 보였다. 미세구조 특성에서는 열처리 온도가 500 $^{\circ}C$ 이상에서는 NiSi$_2$silicides의 domain size는 결정성의 향상에 따라 증가되었다. 결정성 향상이 3C-SiC와 silicides 사이의 격자상수의 낮은 불일치를 완화시키는데 기여 하였 다.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.19-24
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• 1996

The phase distribution and interface chemistry by the solid-state reaction between SiC and nickel were studied at temperatures between $550 \;and\; 1250^{\circ}C$ for 0.5-100 h. The reaction with the formation of silicides and carbon was first observed above $650^{\circ}C$. At $750^{\circ}C$, as the reaction proceeded, the initially, formed $Ni_3Si_2$ layer was converted to $Ni_2$Si. The thin nickel film reacted completely with SiC after annealing at $950^{\circ}C$ for 2 h. The thermodynamically stable $Ni_2$Si is the only obsrved silicide in the reaction zone up to $1050^{\circ}C$. The formation of $Ni_2$Si layers with carbon precipitates alternated periodically with the carbon free layers. At temperatures between $950^{\circ}C$ and $1050^{\circ}C$, the typical layer sequences in the reaction zone is determined by quantitative microanalysis to be $SiC/Ni_2$$Si+C/Ni_2$$Si/Ni_2$$Si+C/…Ni_2$Si/Ni(Si)/Ni. The mechanism of the periodic band structure formation with the carbon precipitation behaviour was discussed in terms of reaction kinetics and thermodynamic considerations. The reaction kinetics is proposed to estimate the effective reaction constant from the parabolic growth of the reaction zone.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.72-72
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• 2007

Ni 단일박막과 Ni-Zr 합금박막을 단결정 Si 기판위에 증착한 후 RTP를 이용하여 Ni 실리사이드 형성반응을 관찰하였고, $500^{\circ}C$에서 형성된 Ni 실리사이드 박막에 $600^{\circ}C,\;650^{\circ}C$에서 후속 열처리 공정을 수행하여 열 안정성을 평가하였다. RTP를 이용하여 실리사이드를 형성할 경우, Ni/Si 계의 경우, 고온 열처리에서 $NiSi_2$ 결정립의 과대 성장 및 단락이 발생하였지만, Ni-Zr/Si 계의 경우 첨가된 내열금속 원소가 NiSi에서 $NiSi_2$ 로의 상전이와 핵생성을 지연시켜 Ni 실리사이드 박막의 열 안정성 개선 효과를 확인하였다.

• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1020-1029
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• 1998

The reaction-bonded TiC-Ni/Si/Co composites were prepared by the melt infiltration of Co, Si, and Ni me-tal into the TiC preforms. The miocrostructure reaction composition and mechanical properties were in-vestigated. In the case of the melt infiltrated with Co and Ni TiC grain shape was changed from angular to spherical shape with the average grain size of ∼5$\mu\textrm{m}$. In the case of the melt infiltrated with Co/Si or Ni/Si, Si was reacted with TiC particles and formed SiC particles. The bending strength of both specimens which have atomic ratio of 3 were 710 MPa and 515 MPa respectively. In the case of the melt infiltrated with Ni/Si/Co,. nonstoichiometric TiC was formed and its bending strength decreased to 420 MPa.

• Korean Journal of Materials Research
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• v.7 no.11
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• pp.1018-1023
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• 1997

본 연구에서는 3C-SiC의 ohmic 접합에 대하여 그 전기적 특성과 미세구조의 상관관계에 대하여 분석하였다. 표준사진식각 공정을 통하여 ohmic접합 금속으로서 Ni을 진공증착시켜 일련의 TLM패턴으로 열처리에 따르는 전류-전압 특성을 조사하였고 TEM, SEM, AES, EDS를 사용하여 Ni/SiC 계면에 대한 미세구조, 화학적 특성을 분석하였다. 열처리 온도와 시간을 통한 thermal budget이 증가함에 따라서 접촉저항이 감소되었으며 그 값은 $10^{-2}$-$10^{-4}$Ω$\textrm{cm}^2$의 범위에 속하였다. EDS와 AES를 통하여 7$50^{\circ}C$이상의 열처리 후 silicide(NiSi$_{2}$)의 주변에 carbon층이 형성되는 것을 확인하였으며, 열처리 온도가 증가함에 따라서 island형 silicide의 크기가 조밀해지며 SiC와의 접착성이 향상됨을 알 수 있었다. Ni/3C-SiC ohmic 접합의 전기적 특성은 계면에 생성되는 silicide와 carbon의 형성거동에 의하여 결정되는 것으로 믿어진다.