• Title/Summary/Keyword: Ni-Fe thin film

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A Study on Diffusion Behavior in NiFe/Ag Bilayer Films deposited by ion Beam Sputtering Methods (이온빔 스퍼터링 방법으로 증착한 NiFe/Ag 박막의 확산 거동)

  • 지재범;이성래;문대원
    • Journal of the Korean institute of surface engineering
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    • v.35 no.2
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    • pp.107-112
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    • 2002
  • We have studied diffusion behavior of NiFe/Ag bilayer deposited by on silicon Ion Beam Sputtering methods. The diffusion behavior of NiFe and Ag in NiFe/Ag thin film is analyzed by Medium Energy Ion Scattering Spectroscopy. For samples without Ta underlayer, silicides such as Ni-Si or Fe-Si were formed at Si substrate and NiFe interface. In contrast, Ag predominantly diffused into the NiFe layer probably through their grain boundaries for Ta underlayered samples.

A study on the Standing Spin Wave Resonance of Ni-Fe Thin Films. (Ni-Fe 합금박막의 스핀파 공명 연구)

  • 백종성;서영수;김약연;임우영;이수형
    • Journal of the Korean Magnetics Society
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    • v.4 no.2
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    • pp.100-105
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    • 1994
  • Ni-Fe thin films are deposited on the corning glass substrate by means of RF magnetron sputtering system In order to investigate the dependence of the prorerties of Ni-Fe thin films on the film thickness, ferromagnetic reson¬ance spectrum has been examined. The effective magnetization $M_{eff}$ is constant for all samples, while the exchange stiffness constant A increases with the film thickness. A tendency that spectroscopic splitting factor g increases with the sample thickness, we expect that the increase of the contribution of the orbital motion to the magnetic moment as a reason for it.

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Shape Magnetic Anisotropy on Magnetic Easy Axis of NiFe/Cu/NiFe/IrMn Spin Valve Thin Film (NiFe/Cu/NiFe/IrMn 스핀밸브 박막소자의 자화 용이축에 따른 형상 자기이방성)

  • Choi, Jong-Gu;Kwak, Tae-Joon;Lee, Sang-Suk;Sim, Jung-Taek
    • Journal of the Korean Magnetics Society
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    • v.20 no.2
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    • pp.35-40
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    • 2010
  • The GMR-SV (giant magnetoresistance-spin valve) device depending on the micro patterned features according to two easy directions of longitudinal and transversal axes has been studied. The GMR-SV multilayer structure was Ta(5 nm)/NiFe(8 nm)/Cu(2.3 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm). The applied anisotropy direction of the GMR-SV thin film was performed under the magnitude of 300 Oe using by permanent magnet during the deposition. The size of micro patterned device was a $1\;{\times}\;18\;{\mu}m^2$ after the photo lithography process. In the aspects of the shape magnetic anisotropy effect, there are two conditions of fabrication for GMR-SV device. Firstly, the direction of sensing current was perpendicular to the magnetic easy axis of the pinned NiFe/IrMn bilayer with the transversal direction of device. Secondly, the direction of shape magnetic anisotropy was same to the magnetic easy axis of the free NiFe layer with the longitudinal direction of device.

Design and Fabrication of Low-Power, High-Frequency, High-Performance Magnetic Thin Film Transformer (저전력, 고주파, 고효율 자성박막 변압기 설계 및 제작에 대한 연구)

  • Yun, Ui-Jung;Jeong, Myeong-Hui
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.11
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    • pp.555-561
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    • 2001
  • In this paper, the low power (1.5 W) solenoid-type magnetic thin-film transformers utilizing a $Ni_{81}Fe_{19)$ core material were designed and fabricated for 5 MHz-drive DC-DC converter application. The $20\mum$ thick copper films were used as the coils. The transformers fabricated in this work have the sizes of $3.08 mm\times25.5 mm\; and\; 6.15 mm\times12.75 mm.$ The optimum design of solenoid-type magnetic thin film transformers was performed utilizing the conventional equations, a Maxwell computer simulator (Ansoft HFSS V7.0 for PC), and parameters obtained from the magnetic properties of NiFe magnetic core materials. frequency characteristics of inductance, dc resistance (R), coupling factor (k) and gain of developed transformers were measured using HP4194A impedance and gain-phase analyzer. The fabricated transformers with the size of $6.15 mm\time12.75 mm$ exhibit the inductance of $0.83 \muH$, the dc resistance of $2.3\Omega$$\Omega$, the k of 0.91 and the gain of -1 dB at 5 MHz, which show the comparable results to those reported in the recent literatures. The measured high-frequency characteristics for the fabricated transformers agreed well with those obtained by theoretical calculations .

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