• 한국진공학회지
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• 제16권2호
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• pp.116-121
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• 2007

Ti-50 at. % Ni 합금 타깃으로 PLD(pulsed laser deposition)방법을 사용하여 TiNi 형상기억합금 박막을 제작하였다. Ar분위기(200 mTorr)와 고진공분위기($5{\times}10^{-6}\;Torr$)에서 제작한 TiNi 박막의 조성 및 결정성의 변화를 조사했으며, 박막의 조성은 에너지 분산 엑스선 분광 분석(EDXS)을 이용하여 조사하였고, 박막의 결정성은 엑스선 회절장치(XRD)를 이용하여 조사하였다. 박막의 조성은 기판과 타깃의 거리에 의존되었지만, 기판의 온도와는 무관함을 알 수 있었으며, Ar 분위기에서 플룸 안쪽에 기판이 위치하였을 때 조성 제어가 용이함을 알 수 있었다. 또한, Ar 가스 분위기에서 증착 된 TiNi 박막은 고진공분위기에서 증착된 박막보다 더 낮은 온도(약 $400^{\circ}C$)에서 in situ로 결정화됨을 알 수 있었다. 이들 결과는, PLD방법으로 TiNi 형상기억합금 박막을 제작할 때 분위기 가스의 압력이 결정화 온도를 낮추어 주는 중요한 역할을 할 수 있음을 시사한다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 추계학술대회 논문집
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• pp.563-564
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• 2012

• Journal of Magnetics
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• 제17권2호
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• pp.78-82
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• 2012

CoNiFe(CNF)/$BaTiO_3(BTO)$/CoNiFe(CNF) multilayered thin films were deposited on Pt/Ti/$SiO_2$/Si substrates by using pulsed laser deposition (PLD) system. We fabricated three different thin films of BTO, BTO/CNF and CNF/BTO/CNF for magneto-capacitor and studied their crystalline structure, surface and interface morphology, and magnetic and electrical properties. When three different structures of multilayered thin film were compared, magnetization of CNF/BTO/CNF thin films was decreased by magnetic and dielectric interaction. Also we confirmed that capacitance of CNF/BTO/CNF multilayered thin film was enhanced as being near tetragonal structure with increasing of c/a ratio because of atomic bonding at interface between BTO dielectric and CNF magnetic materials. Finally, we studied the change of the capacitance of CNF/BTO/CNF multilayered thin film with magnetic field for emergence of magnetocapacitance and suggested a possibility of enhanced capacitance.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1996년도 추계연구발표회 논문개요집
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• pp.26-27
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• 1996

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1995년도 춘계연구발표회 논문개요집
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• pp.86-87
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• 1995

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.231-234
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• 2000

Vertically aligned carbon nanotubes were synthesized on Ni-coated Si substrates using microwave plasma-enhanced chemical vapor deposition. The grain size of Ni thin films was varied with the RF power density during the RF magnetron sputtering process. It was found that the diameter, growth rate, and density of carbon nanotubes could be controlled systematically by the grain size of Ni thin films. With decreasing the grain size of Ni thin films, the diameter of the nanotubes decreased, whereas the growth rate and density increased. High-resolution transmission electron microscope images clearly demonstrated synthesized nanotubes to be multiwalled. The number of graphitized wall decreased with decreasing the diameter. Field emission properties will be further presented.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.208-208
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• 2013

Graphene has emerged as a fascinating material for next-generation nanoelectronics due to its outstanding electronic properties. In particular, graphene-based field effect transistors (GFETs) have been a promising research subject due to their superior response times, which are due to extremely high electron mobility at room temperature. The biggest challenges in GFET applications are control of carrier concentration and opening the bandgap of graphene. To overcome these problems, three approaches to doping graphene have been developed. Here we demonstrate the decoration of Ni nanoparticles (NPs) on graphene films by simple annealing for p-type doping of graphene. Ni NPs/graphene films were fabricated by coating a $NiCl2{\cdot}6H2O$ solution onto graphene followedby annealing. Scanning electron microscopy and atomic force microscopy revealed that high-density, uniformly sized Ni NPs were formed on the graphene films and the density of the Ni NPs increased gradually with increasing $NiCl2{\cdot}6H2O$ concentration. The formation of Ni NPs on graphene films was explained by heat-driven dechlorination and subsequent particlization, as investigated by X-ray photoelectron spectroscopy. The doping effect of Ni NPs onto graphene films was verified by Raman spectroscopy and electrical transport measurements.

• E2M - 전기 전자와 첨단 소재
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• 제9권10호
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• pp.991-1000
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• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

• Journal of Magnetics
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• 제6권4호
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• pp.129-131
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• 2001

In order to investigate the effect of the interface on GMR, [NiFe(25 ${\AA}$)/Cu(24${\AA}$)]$_2$/Si thin film was epitaxially grown on HF-treated Si (001) substrate using a DC magnetron sputtering method. Typical GMR effects could be observed in epitaxial film with a weak antiferromagnetic exchange coupling while non epitaxial film showed unsaturated and broad MR curves probably due to inter-diffusion between NiFe and Cu layers. Ferromagnetic resonance (FMR) experiment showed two distinct absorption peaks in all films. Each peak was revealed to come from each NiFe layer with different magnetic property. In FMR measurement very clear interface in epitaxial films could be confirmed by a lower value of line width (ΔH) and higher M$\sub$s/ of epitaxial film than those of non epitaxial films, respectively.

• 한국자기학회지
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• 제4권3호
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• pp.239-243
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• 1994

NiFe와 TbCo의 게면에서의 자기 교환 결합을 이용하여 자기 저항 소자에 수평 및 수직 바이어스 자장을 제공할수 있도록 $NiFe/TbCo/Si_3N_4$ 박막을 제조하였다. Tb의 면적비가 36 %이고, 기판 바이어스를 인가하지 않았을때 100~180 Oe의 교환 자장을 얻을 수 있었다. NiFe, TbCo, 그리고 보호막으로 사용되는 $Si_3N_4$ 각층의 두께는 각각 $470\;{\AA},\;2400\;{\AA},\;600\;{\AA}$ 이었다. NiFe를 1000 W의 전력과 2.5 mTorr의 아르곤 압력에 제작한 시편에서 1.45 %의 자기 저항 변화율을 얻을 수 있었다. 미세 소자로 제작된 NiFe의 자기 저항 변화율은 1.31 %로 감소 하였으며, 감자화 자장의 영향으로 박막이 완전히 포화되지 못한 곡선을 보였다. 150 Oe의 교환 자 장을 갖는 박막을 자화 용이 방향과 $36^{\circ}$의 각도로 소자를 제작한 결과 약 85 Oe 정도의 자기 저항 응답 곡선의 천이를 보였으며, 소자의 동작점이 응답의 선형 구간으로 이동하였다. 또한 Barkhausen 잡음이 교환 자장에 의한 수평 바이어스에 의하여 제거되었다.