• 제목/요약/키워드: Negative ion source

검색결과 70건 처리시간 0.027초

Microstructure and Characterization of Ni-C Films Fabricated by Dual-Source Deposition System

  • Han, Chang-Suk;Kim, Sang-Wook
    • 한국재료학회지
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    • 제26권6호
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    • pp.293-297
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    • 2016
  • Ni-C composite films were prepared by co-deposition using a combined technique of plasma CVD and ion beam sputtering deposition. Depending on the deposition conditions, Ni-C thin films manifested three kinds of microstructure: (1) nanocrystallites of non-equilibrium carbide of nickel, (2) amorphous Ni-C film, and (3) granular Ni-C film. The electrical resistivity was also found to vary from about $10^2{\mu}{\Omega}cm$ for the carbide films to about $10^4{\mu}{\Omega}cm$ for the amorphous Ni-C films. The Ni-C films deposited at ambient temperatures showed very low TCR values compared with that of metallic nickel film, and all the films showed ohmic characterization, even those in the amorphous state with very high resistivity. The TCR value decreased slightly with increasing of the flow rate of $CH_4$. For the films deposited at $200^{\circ}C$, TCR decreased with increasing $CH_4$ flow rate; especially, it changed sign from positive to negative at a $CH_4$ flow rate of 0.35 sccm. By increasing the $CH_4$ flow rate, the amorphous component in the film increased; thus, the portion of $Ni_3C$ grains separated from each other became larger, and the contribution to electrical conductivity due to thermally activated tunneling became dominant. This also accounts for the sign change of TCR when the filme was deposited at higher flow rate of $CH_4$. The microstructures of the Ni-C films deposited in these ways range from amorphous Ni-C alloy to granular structures with $Ni_3C$ nanocrystallites. These films are characterized by high resistivity and low TCR values; the electrical properties can be adjusted over a wide range by controlling the microstructures and compositions of the films.

Internal Mixing of Pollutants for Submicron Particles Observed during Springtime in Japan

  • Matsumoto, Jun;Narukawa, Masahiro;Takahashi, Kenshi;Matsumi, Yutaka;Yabushita, Akihiro;Shimizu, Atsushi;Matsui, Ichiro;Sugimoto, Nobuo
    • Asian Journal of Atmospheric Environment
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    • 제3권1호
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    • pp.27-41
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    • 2009
  • Internally mixed states of submicron particles during transport from the Asian continent to the Pacific Ocean were analyzed using a single-particle time-offlight mass spectrometer. The observation was conducted at Tsukuba in Japan in the spring of 2005 in order to investigate springtime transport of particles from the continent. The sum of ion intensities of sulfate (${HSO_4}^-$) detected in particles originating from the continental air masses counted for 75% of that in all particles during the observation. By analyzing correlations among compounds, origins and internally mixed states of compounds were estimated. It was found that nitrate was mixed with sulfate-rich particles as the air mass approached Japan. It was confirmed that Asian mineral dust particles played significant roles for transport of continental sulfate to Japan. As a result of analysis on internal mixing of chlorine and nitrate, it was implied that the chlorine loss in fine sea salt particles had already proceeded at Tsukuba. It was characteristic that fluoride ions were significantly detected, coal combustion in the Asian Continent can be an important source of fluorides detected in Japan through the westward transportation of fine particles including fluorides.

Microfabrication of Submicron-size Hole on the Silicon Substrate using ICP etching

  • Lee, J.W.;Kim, J.W.;Jung, M.Y.;Kim, D.W.;Park, S.S.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.79-79
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    • 1999
  • The varous techniques for fabrication of si or metal tip as a field emission electron source have been reported due to great potential capabilities of flat panel display application. In this report, 240nm thermal oxide was initially grown at the p-type (100) (5-25 ohm-cm) 4 inch Si wafer and 310nm Si3N4 thin layer was deposited using low pressure chemical vapor deposition technique(LPCVD). The 2 micron size dot array was photolithographically patterned. The KOH anisotropic etching of the silicon substrate was utilized to provide V-groove formation. After formation of the V-groove shape, dry oxidation at 100$0^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have a etch-mask for dry etching. The thicknesses of the grown oxides on the (111) surface and on the (100) etch stop surface were found to be ~330nm and ~90nm, respectively. The reactive ion etching by 100 watt, 9 mtorr, 40 sccm Cl2 feed gas using inductively coupled plasma (ICP) system was performed in order to etch ~90nm SiO layer on the bottom of the etch stop and to etch the Si layer on the bottom. The 300 watt RF power was connected to the substrate in order to supply ~(-500)eV. The negative ion energy would enhance the directional anisotropic etching of the Cl2 RIE. After etching, remaining thickness of the oxide on the (111) was measured to be ~130nm by scanning electron microscopy.

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교류 플라즈마 표시기 방전 시 발생하는 불순물 종의 분석 (An analysis on the impurities generated by discharge in AC plasma display panel)

  • 김광남;김중균;양진호;황기웅;이석현
    • 한국진공학회지
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    • 제8권4A호
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    • pp.482-489
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    • 1999
  • AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.

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Hydrogen Plasma Characteristics for Photoresist Stripping Process in a Cylindrical Inductively Coupled Plasma

  • Yang, Seung-Kook;Cho, Jung Hee;Lee, Seong-Wook;Lee, Chang-Won;Park, Sang-Jong;Chae, Hee-Sun
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권4호
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    • pp.387-394
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    • 2013
  • As the feature size of integrated circuits continues to decrease, the challenge of achieving an oxidation-free exposed layer after photoresist (PR) stripping is becoming a critical issue for semiconductor device fabrication. In this article, the hydrogen plasma characteristics in direct plasma and the PR stripping rate in remote plasma were studied using a $120{\Phi}$ cylindrical inductively coupled plasma source. E mode, H mode and E-H mode transitions were observed, which were defined by matching the $V_{rms}$ and total impedance. In addition, the dependence of the E-H mode transition on pressure was examined and the corresponding plasma instability regions were identified. The plasma density and electron temperature increased gradually under the same process conditions. In contrast, the PR stripping rate decreased with increasing proportion of $H_2$ gas in mixed $H_2/N_2$ plasma. The decrease in concentration of reactive radicals for the removal of PR with increasing $H_2$ gas flow rate suggests that NH radicals have a dominant effect as the main volatile product.

On-site Water Nitrate Monitoring System based on Automatic Sampling and Direct Measurement with Ion-Selective Electrodes

  • Kim, Dong-Wook;Jung, Dae-Hyun;Cho, Woo-Jae;Sim, Kwang-Cheol;Kim, Hak-Jin
    • Journal of Biosystems Engineering
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    • 제42권4호
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    • pp.350-357
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    • 2017
  • Purpose: In-situ monitoring of water quality is fundamental to most environmental applications. The high cost and long delays of conventional laboratory methods used to determine water quality, including on-site sampling and chemical analysis, have limited their use in efficiently managing water sources while preventing environmental pollution. The objective of this study was to develop an on-site water monitoring system consisting mainly of an Arduino board and a sensor array of multiple ion selective electrodes (ISEs) to measure the concentration of $NO_3$ ions. Methods: The developed system includes a combination of three ISEs, double-junction reference electrode, solution container, sampling system consisting of three pumps and solenoid valves, signal processing circuit, and an Arduino board for data acquisition and system control. Prior to each sample measurement, a two-point normalization method was applied for a sensitivity adjustment followed by an offset adjustment to minimize the potential drift that could occur during continuous measurement and standardize the response of multiple electrodes. To investigate its utility in on-site nitrate monitoring, the prototype was tested in a facility where drinking water was collected from a water supply source. Results: Differences in the electric potentials of the $NO_3$ ISEs between 10 and $100mg{\cdot}L^{-1}$ $NO_3$ concentration levels were nearly constant with negative sensitivities of 58 to 62 mV during the period of sample measurement, which is representative of a stable electrode response. The $NO_3$ concentrations determined by the ISEs were almost comparable to those obtained with standard instruments within 15% relative errors. Conclusions: The use of the developed on-site nitrate monitoring system based on automatic sampling and two-point normalization was feasible for detecting abrupt changes in nitrate concentration at various water supply sites, showing a maximum difference of $4.2mg{\cdot}L^{-1}$ from an actual concentration of $14mg{\cdot}L^{-1}$.

Dose calibrator 측정 깊이와 용량의 변화에 따른 선량 값의 성향에 대한 고찰 (A Study on the Tendency of Dose value According to Dose calibrator Measurement Depth and Volume)

  • 김진구;함준철;오신현;강천구;김재삼
    • 핵의학기술
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    • 제24권1호
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    • pp.20-26
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    • 2020
  • 핵의학이란 방사성동위원소 추적자를 인체에 투여하여 관심장기에 대한 형태학적인 정보와 생물학적이고 기능적인 정보를 얻고 평가한다. Dose calibrator는 의료기관에서 단일 핵종의 방사능을 측정하기 위해 사용하는 장비이며, 방사성동위원소의 정확한 용량의 투여는 진단과 치료에 중요한 요인이다. 최근 정량분석을 위한 여러 시스템이 개발되고 있고 ERPF (Effective Renal Plasma Flow), GFR (Glomerular Filtration Rate) 등 정량분석이 필요한 검사에 있어서 정확한 투여 용량 및 재현성 있는 측정이 중요해지고 있다. 따라서 본 논문을 통해 Dose calibrator의 측정 깊이와 용량에 따른 선량 값의 성향을 알아보고 적절한 측정 깊이 및 용량에 대해 알아 보고자 한다. 실험에 사용한 Dose calibrator는 CRC-15R과 CRC-15βeta (Capintec, New Jersey, USA)를 사용하였다. 선원으로는 표준선원(Standard source) 137Cs, 133Ba, 57Co를 사용하였고, 방사성 의약품은 99mTc-pertechnetate를 사용하였다. 표준선원은 측정 깊이만 변화하여 0 cm부터 15 cm까지 1 cm 깊이마다 15회씩 측정했고, 99mTc-pertechnetate의 경우에는 1 mL 주사기로 표준선원과 동일한 깊이로 실험을 진행했고, 용량의 변화를 고려하여 0.1 mL, 0.3 mL, 0.5 mL, 0.7 mL, 0.9 mL로 각 깊이마다 15회씩 측정했다. 표준선원인 137Cs, 133Ba, 57Co의 깊이의 변화에서는 모두 깊이에 따른 선량 값의 변화가 통계적으로 유의한 차이가 있었다(p<0.05). 99mTc-pertechnetate도 깊이에 따른 용량의 변화에서 선량 값이 모두 통계적으로 유의한 차이가 있었다(p<0.05). CRC-15R의 표준선원 비교 그래프에서 137Cs, 133Ba, 57Co는 Plateau를 그리기 시작한 2 cm에서 9 cm까지는 각 선원마다 비교시 통계적으로 유의한 차이가 없었다(p>0.05). CRC-15βeta의 표준선원 비교 그래프에서는 Plateau를 그리기 시작한 영역은 3 cm에서 9 cm로 통계적으로 유의한 차이가 없었다(p>0.05). 99mTc-pertechnetate의 그래프는 0.1 mL에서 1 cm에서 7 cm, 0.3 mL와 0.5 mL에서는 0 cm에서 7 cm, 0.7 mL에서는 0 cm에서 6 cm, 0.9 mL에서는 0 cm에서 5 cm에서 통계적으로 유의한 차이가 나타나지 않았다(p>0.05). 본 연구를 통해 방사성동위원소를 환자에게 주입하거나 정도관리를 진행 시 편차가 적고 재현성을 위해 신뢰할 수 있는 구간을 확인 할 수 있었다. 높이에 따른 변화가 가장 적은 Plateau의 구간이 0.3 mL 혹은 0.5 mL의 용량으로 0 cm 에서 7 cm의 깊이에서 측정한다면, 편차를 최소한으로 줄일 수 있을 것으로 사료된다. 표준선원의 경우에는 본 연구의 결과에 따라 장비마다 Plateau의 변화가 가장 적은 구간의 깊이에서 재현성 있게 측정하는 것이 중요하다고 생각된다. 적절한 구간을 찾아서 재현성 있는 검사를 시행하면 검사의 품질향상 및 피폭선량저감 그리고 진단능을 높이는데 이바지 할 것이라고 생각된다.

만경강(萬頃江) 유역(流域)의 토양(土壤) 및 수도체중(水稻體中) 중금속(重金屬) 함량(含量) (Heavy Metals in Paddy Rice and Soils in Mangyeong River Area)

  • 김성조;양환승
    • 한국환경농학회지
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    • 제5권1호
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    • pp.11-23
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    • 1986
  • 전주시(全州市) 공단폐수(工團廢水) 및 도시하수(都市下水)의 영향(影響)을 받는 지역(地域)의 토양(土壤)과 수도(水稻)를 대상(對象)으로 Cd, Cu, Pb, 및 Zn등 중김속함량(重金屬含量)을 조사분석(調査分析)한 결과(結果)를 요약(要約)하면 다음과 같다. 1) 토양중(土壤中)의 중김속함량(重金屬含量)은 표토(表土)와 심토(心土)의 차(差)가 거의 없었다. 2) 토양중(土壤中)의 Cd, Cu, Pb, 및 Zn의 전함량(全含量)은 오염원(汚染源)으로부터 거리(距離)가 멀어질수록 부(負)의 상관(相關)을 나타냈다. 3) 표토중(表土中) Cd, Pb, Zn 함량(含量)과 0.1N-HCL 및 $N-CH_3COONH_4$에 의한 용출량간(溶出量間)에 정(正)의 상관(相關)을 나타냈다. 4) 토양중(土壤中) 점토(粘土), 유기물함량(有機物含量) 및 양(陽) ion치환용량(置換容量)과 중김속함량간(重金屬含量間)에는 정(正)의 유의성(有意性) 있는 상관(相關)을 나타냈다. 5) 공단폐수(工團廢水) 및 도시하수(都市下水)에 의해서 오염(汚染)된 답토양(畓土壤)에서 생산(生産)된 현미중(玄米中) 중김속함량(重金屬含量)은 Cd은 $0.15{\sim}0.91$ Cu은 $1.13{\sim}5.68$, Pb은 $0.22{\sim}7.16$, Zn.은 $11.74{\sim}38.66ppm$이었다. 6) 현미중(玄米中) 중김속(重金屬)의 함량(含量)은 오염원(汚染源)으로부터 멀어질수록 감소(減少)하는 부(負)의 상관(相關)을 나타냈다. 7) 지상부(地上部) 수도(水稻)의 경엽중(莖葉中) Cd, Cu, 및 Zn의 함량(含量)은 현미중(玄米中) 이들의 함량(含量)과 유의성(有意性) 있는 정(正)의 상관(相關)을 나타냈다.

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도시폐수처리장의 활성슬러지에서 분리한 Aniline 분해세균 Delftia sp. JK-2의 특성연구 (Characterization of an Aniline-degrading Bacterium, Delftia sp. JK-2 Isolated from Activated Sludge of Municipal Sewage Treatment Plant)

  • 조윤석;강형일;장효원;오계현
    • 미생물학회지
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    • 제36권2호
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    • pp.79-83
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    • 2000
  • 도시폐수처리장의 활성슬러지 표본으로부터 유일 탄소원 및 질소원으로 aniline을 이용할수 있는 미생물 컨소시엄을 농화배양하였다. 농화배양으로부터 분리된 3개의 분해세균 가운데 분해능이 탁원한 세균을 본 연구에 사용되었다. 분리세균운 그람 음성세균으로서 여러 가지 생리.생화학적 시험을 통하여 Delftia acidovorans로 동정되었으며 이를 Delftia sp. JK-2로 명명하였다. 10mM의 aniline이 포함된 액체배지에 Delftia sp. JK-2를 접종한 결과 24시간 이내에 aniline이 완전히 분해되엇다. 이 가간동안 배양액 내에 $NH_4^+$이온은 일시적으로 생성되었다가 aniline이 완전히 분해됨에 따라 완전히 사라졌다. Aniline을 포함하여 무기배지에 부가탄소로서 glucose를 첨가하였을 때 분해능은 크게 감소하였다. 질소원으로서 0.5% nitratef,f 첨가하였을 때 첨가하지 않은 대조군에 비해 anline의 분해가 80% 이상 향상되었다. Aniline 분해세균의 16S rDNA 염기서열을 이용하여 phylogenetic 분석을 실시한 결과 이 세균은 Delftia acidovorans와 96%의 유사성을 나타내었으며, Acidovorax, Aquaspirllum, Xylophilus, Variovorax, Rhodoferax 등의 세균과도 상당한 유사성을 나타내었다.

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제연소인근지역(製鍊所隣近地域)의 토양(土壤) 및 수도체중(水稻體中) 중금속함량(重金屬含量)에 관(關)한 조사연구(調査硏究) (Studies on the Heavy Metals in Paddy Rice and Soils in Jang-hang Smelter)

  • 김성조;양환승
    • 한국토양비료학회지
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    • 제18권4호
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    • pp.336-347
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    • 1985
  • 장항제련소(長項製鍊所)의 배연(排煙)에 영향(影響)을 받는 지역(地域)의 토양(土壤)과 수도(水稻)를 대상(對象)으로 Cd, Cu, Pb 및 Zn등 중금속함량(重金屬含量)을 조사분석(調査分析)한 결과(結果)를 요약(要約)하면 다음과 같다. 1. 제연소(製鍊所)의 배기(排氣)에 의(依)한 오염(汚染)은 동(東)쪽 방향(方向)에서 가장 심(甚)하였고 Pb의 천연부존량(天然賦存量)을 기준(基準)으로 하였을 때 오염거리(汚染距離)는 5km이었으며 표토(表土)에 많이 축적(蓄積)되고 있었다. 2. 토양중(土壤中) 중금속전함량(重金屬全含量)에 대(對)한 0.1N-HCl 및 $N-NH_4Ac$에 의한 용출율(溶出率)은 표토(表土)에서 고도(高度)의 유의성(有意性)있는 상관(相關)을 나타냈다. 3. 토양중(土壤中) 유기물함량(有機物含量) 및 양(陽)ion치환용량(置換容量)과 중금속전함량간(重金屬全含量間)에는 유의성(有意性)있는 상관(相關)을 나타냈다. 4. 제연소주변(製鍊所周邊) 토양(土壤)에서 생산(生産)된 현미중(玄米中)의 중금속함량(重金屬含量)은 Cd가 0.23~1.33, Cu은 2.39~6.25, Pb은 0.95~8.32, Zn은 14.60~27.31ppm이었다. 5. 지상부(地上部) 식물체중(植物體中)의 Cd, Cu 및 Zn의 함량(含量)은 현미중(玄米中) 이들의 함량(含量)과 유의성(有意性) 있는 정(正)의 상관(相關)을 나타내었다. 6. 현미중(玄米中) Cd, Cu, Pb 및 Zn의 함량(含量)은 오염원(汚染源)으로부터 멀리 떨어질수록 감소(減少)하였다.

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