• Korean Journal of Optics and Photonics
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• v.1 no.2
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• pp.178-184
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• 1990

The fiber laser was fabricated using Nd doped single mode fiber. The fiber was made by MCVD and solution doping method, and the Fabry-Perot resonator was composed with two dichroic mirrors. It was operated at 1.096 um with 15 nm bandwidth. When the reflectivity of the output copuling mirror was 67.5%. the maxiurn output power 1.88 mw and its slope efficiency 1.28%. was obtained.

• Journal of Magnetics
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• v.20 no.2
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• pp.97-102
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• 2015

The waste of sintered Nd-Fe-B magnets was recycled using the method of dopingPrNd nanoparticles. The effect of PrNd nanoparticle doping on the magnetic properties of the regenerated magnets has been studied. As the content of the PrNd nanoparticles increases, the coercivity increases monotonically, whereas both the remanence and the maximum energy products reach the maximum values for 4 wt% PrNd doping. Microstructural observation reveals that the appropriate addition of PrNd nanoparticles improves the magnetic properties and refines the grain. Domain investigation shows that the self-pinning effect of the rare earth (Re)-rich phase is enhanced by PrNd nano-particle doping. Compared to the magnet with 4 wt% PrNd alloy prepared using the dual-alloy method, the regenerated magnet doped with the same number of PrNd nanoparticles exhibits better magnetic properties and a more homogeneous microstructure. Therefore, it is concluded that PrNd nanoparticle doping is an efficient method for recycling the leftover scraps of Nd-Fe-B magnets.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.529-532
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• 2002

We experimentally investigate the evolution of nanosecond Stokes pulses in a single-pass Raman laser pumped by a Q-switched Nd: YAG laser at 1064 nm. As a Raman medium, a GeO$_2$-doped graded-index multimode fiber of 220m long is used. We demonstrate that efficient generation of several Stokes components with 1.5-2.7 nanosecond pulsewidth is obtained by varying the input pump energy.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.9
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• pp.1596-1601
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• 2007

Aluminum doped zinc oxide (AZO) thin films were deposited on coming glass substrates using an Nd:YAG pulsed laser deposition technology. The AZO thin films were deposited with various growth conditions such as the substrate temperature and oxygen partial pressure. In this work, we used various measurement technologies in order to investigate the electrical, structural, and optical properties of the AZO thin films. Among the AZO thin films, the one prepared at the substrate temperature of $300^{\circ}C$ and oxygen partial pressure of 5 mTorr showed the best properties of an electrical resistivity of $4.63{\times}10^{-4}{\Omega}{\cdot}cm$, a carrier concentration of $9.25{\times}10^{20}cm^{-3}$, and a carrier mobility of $31.33cm^2/V{\cdot}s$. All the AZO thin films showed an high average optical transmittance over 90 % in visible region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.231-237
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• 2003

RE(Nd, Sm) elements doped (RE/Y)$_{1.8}$B $a_{2.4}$C $u_{3.4}$$O_{7-x}$ [(RE/Y)1.8] high $T_{c}$ superconductors were directionally grown by Top Seed Melt Growth(TSMG) process in air atmosphere. The (001)melt-textured N $d_{1.8}$B $a_{2.4}$C $u_{3.4}$ $O_{7-X}$(Nd1.8) seed crystals were used for achieving the c-axis alignment large grains perpendicular to surface of the samples. The (RE/Y)1.8 SEM micrographs of the melt-textured (RE/Y)1.8 samples revealed that the nonsuperconducting (RE/Y)211 inclusions are uniformly distributed in the superconducting (RE/Y)123 matrix except the region very close to the Nd seed crystal. The microstructure and superconducting properties were investigated by XRD, SEM, TEM and SQUID magnetometer. The Melt-textured (RE/Y)1.8 samples showed an onset $T_{c}$=91K and sharp superconducting transition. Also, the magnetization value of the (RE/Y)1.8 samples were compared with those of Y1.8 sample at 77 K. 77 K. 77 K. 77 K.K.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.203-206
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• 2001

The applicability of shaped growth of yttrium orthovanadate was approved by successful growth of rod-like single crystals with the rectangular shape. Nd-doped single crystals with content of $Nd^{3+}$ ions of 1,2,3,5 atomic % in the starting melt were grown by the EFG technique with the size up to $10^{*}10mm$ in section and up to 85 mm in length. For the testing of the multiple growth of the orthovanadates, two and three Nd-and Yb-doped $YVO_{4}$ single crystals were grown by the EFG technique simultaneously up to 110 mm in length.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.51.1-51.1
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• 2010

$Y_2O_3$ $Er_2O_3$ and $Nd_2O_3$ doped polycrystalline silicon nitride were prepared by hot pressed sintering at $1850^{\circ}C$ and their optical transmittance were investigated in visible and in infrared region. Mechanical and tribological properties were also investigated. Grain growth in silicon nitride was reduced with addition of $Y_2O_3$ and $Nd_2O_3$. 1 wt.% of each rare earth metal were sintered with 3 wt.% MgO, 9wt.% AlN and 87 wt.% of ${\alpha}-Si_3N_4$. Adding these rare earth metal oxides shows good mechanical properties as high strength and toughness and also shows low friction coefficient.

• Korean Journal of Optics and Photonics
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• v.13 no.6
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• pp.554-558
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• 2002

A new laser material, Nd:LSB $(Nd${3}:LaSc_3(BO_3)_4$, lanthanum scandium borate), of microchip type was grown by the Czochralski pulling method, and tested for optical and lasing properties. Nd:LSB, able to be highly doped with $Nd^{3+}$ ions while maintaining good optical, chemical, mechanical properties, was compared to another Nd-type laser material. The absorption and fluorescence spectra, and fluorescence lifetime were measured, and the crystal structure was analyzed. The lasing characteristics were investigated by using Ti:sapphire laser as a pumping light source.

• Korean Journal of Optics and Photonics
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• v.3 no.1
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• pp.50-54
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• 1992

Maskless depositon of copper onto n-doped and p-doped Si in an aqueous copper sulfate solution is investigated. On p-doped Si substrates, microscopic $(~10\mu\textrm{m}$) copper spots are deposited by illuminating continuous wave $Ar^+$ laser beam of wavelength 514.5 nm. Copper deposition on n-doped Si substrates is also achieved by shinning second harmonic pulses $(pulse width~25 nsec, \lambda=530 nm)$ of a passively Q-switched Nd:YAG laser. The observed deposition is attributed to the electric field resulting from the Galvanic potential of a semiconductor-electrolyte junction.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.260-263
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• 1990

We report the operation of an Nd+3 doped silica single mode fiber laser pumped by a 514.5nm Ar laser. A CW output power in excess of 0.27mW at 1.096um has been obtained with a sloped efficiency of 0.23% and a 15nm badnwidth.