• Title/Summary/Keyword: NbR

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Comparison and Analysis of Name-Based Routing Protocols for Information-Centric Network (정보 중심 네트워크를 위한 이름 기반 라우팅 프로토콜의 비교 및 분석)

  • Kim, Jung-Jae;Ryu, Min-Woo;Cha, Si-Ho;Cho, Kuk-Huyn
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.14 no.4
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    • pp.1969-1975
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    • 2013
  • ICN (Information-Centric Network) is a next generation Internet communication technology for converting existing Internet communication paradigm to information-based communication paradigm to efficiently use a large amount of information that exists on the Internet. Therefore, unlike existing Internet communication technologies focused on the process of communication using the host address, ICN focuses on the purpose of communication for each information by defining the information of everything that exists on the Internet. For this purpose, ICN uses NbR (Name-based Routing) methods that assign a name to each piece of information, all routers participating in ICN have the physical storage so that they are able to share information with each other. NbR methods on ICN are divided into one-phase routing and two-phase routing depending on how to reach at the storage of each router. However, currently proposed NbR methods cause many problems because they do not reflect the unique characteristics of ICN. Therefore, this paper looked at various NbR issues from caching, access time, distribution, mobility, scaliability, and dissemination of information for an efficient NbR method, and analyzed existing methods proposed for ICN. This paper also proposed a research direction to study the efficient NbR for ICN based on the analysis information.

Comparison of EU-DEMO React & Wind Nb3Sn TF CICC current sharing temperature against Wind & React Nb3Sn CICCs

  • Kwon, Soun P.
    • Progress in Superconductivity and Cryogenics
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    • v.24 no.2
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    • pp.7-18
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    • 2022
  • European efforts to design superconducting conductors for a future tokamak have involved Nb3Sn cable-in-conduit conductor (CICC). Nb3Sn coils which undergo heat treatment to activate the Nb3Sn material are mostly produced through the wind-then-react route. However, some Nb3Sn coils have been proposed with CICCs of the react-then-wind route. The latter CICCs are physically constrained due to handling limitations which if not adhered to will result in irrecoverable damage to the Nb3Sn cable inside, nullifying any performance advantage. A group at the Swiss Plasma Center has proposed such CICC designs, constructing samples and testing them for performance. The characteristics and performance of these react & wind (R&W) CICCs are compared with the more common wind & react (W&R) CICCs, and it is found that the R&W designs show more extreme characteristics than typical W&R Nb3Sn CICCs for some parameters that are known to influence CICC performance. Where the R&W CICCs extend the range of those parameters, they also continue trends formed by the W&R CICCs with the parameters. The main observation, however, is that although the current sharing temperature performances of the R&W samples are above the average of the W&R samples they were compared to, they are not the highest. A similar observation applies to a cost comparison of the superconducting material where the R&W CICCs are found to be relatively cheap but not the cheapest. Given these results, clear practical advantages to the R&W CICC design is not evident.

Flaw Tolerance of (Y,Nb)-TZP/${Al_2}{O_3}$Composites ((Y,Nb)-TZP/${Al_2}{O_3}$복합체의 결함 저항성)

  • 이득용;김대준;이명현;장주웅
    • Journal of the Korean Ceramic Society
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    • v.38 no.1
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    • pp.56-60
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    • 2001
  • 90.24 mol% ZrO$_2$-5.31 mol% $Y_2$O$_3$-4.45 mol% Nb$_2$O$_{5}$ 조성의 (Y,Nb)-TZP와 (Y,Nb)-TZP/Al$_2$O$_3$복합체를 155$0^{\circ}C$~1$600^{\circ}C$에서 1~2시간 소결하여 제조하였다. 시편의 결함에 대한 저항성을 조사하기 위하여 R-curve, Weibull modulus, slow crack growth 변수 등을 조사하였다. 실험결과, (Y,Nb)-TZP와 (Y,Nb)-TZP/Al$_2$O$_3$복합체 모두 상용 3Y-TZP 보다 우수한 결함 저항성이 관찰되었다. (Y,Nb)-TZP/Al$_2$O$_3$복합체의 결함 저항성은 $Al_2$O$_3$첨가에 의한 결정립 가교 인화, 분산강화, R-curve 효과에 의한 것으로 추정된다.

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A study of defect structures in $LiNbO_{3}$ single crystals by optical absorptions (광흡수에 의한 $LiNbO_{3}$ 단결정의 결함 구조 연구)

  • 김상수
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.3
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    • pp.327-340
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    • 1996
  • In this study, a series of $LiNbO_{3}$ crystals with different [Li]/[Nb] ratios, congruent $LiNbO_{3}$ crystals with doped Mg and with Mg and codoped with Mn were grown by the Czocharalski method. These were investigated by UV and IR spectrophotometry. Stoichiometry dependences of the UV absorption edge and the $OH^{-}$ absorption spectra were studied with different [Li]/[Nb] ratios. The position of the UV absorption edge adn the shape and peak point of the $OH^{-}$ absorption spectra changed monotonously upto a critical concentration of Mg ions. The mechanism of the incorporation of Mg ions changes at this concentration. The decomposition of the $OH^{-}$ absorption spectra using a Gaussian lineshape function showed that in Li-deficient crystals the absorption spectra consist of five components in contrast to more or less perfect stoichiometric crystals which reveal to three components. On the basis of these results, the intrinsic and the extrinsic defect structure models in $LiNbO_{3}$ crystals were examined. The behaviour of $\nu$ (OH) reflects the defect structure and supports the Li-site vacancy model as the intrinsic defect structure model and the corresponding extrinsic defect model. A brief discussion is also given of the behaviour of $\nu$ (OH) in $LiNbO_{3}$ crystals simultaneously doped with several kinds of impurity.

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A Study on the Thermal Stability of Unidirectionally Solidified Eutectic Composites of Ni-Base Superalloys (일방향 응고한 Ni기 초내열 공정복합재료의 열적 안정성에 관한 연구)

  • 이현규;공창덕
    • Journal of the Korean Society of Propulsion Engineers
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    • v.2 no.1
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    • pp.67-77
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    • 1998
  • Homogeneous liquids of Ni-21.5Nb-2.5Al and Ni-23.3Nb eutectic superalloys were solidified into Ni/$Ni_3$Al-$Ni_3$Nb(${\gamma}$/${\gamma}$'-${\delta}$)and Ni-Ni/$Ni_3$Nb(${\gamma}$-${\delta}$) phase by directional solidification and the effect of interlamellar spacing on microsturctural stability at high temperatures, hardness variation with growth rate was studied. The interlamellar spacing(${\lambda}$) in the eutectics was varied with the growth rate(R), corresponding to "${\lambda}^2$R =Constant" relationship. Isothermal heat treatments of the eutectics used in this study, provided the microstructural stability improvement at hight temperature as the interlamellar spacing increases. It was also seen that the hardness improvement is made with the growth raterowth rate

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Structure and Electrical Properties of 0.85NaNbO3-0.15LiNbO3 Ceramics (0.85NaNbO3-0.15LiNbO3 세라믹스의 구조 및 전기적 특성)

  • Jeon, Chang Jun;Jeong, Young Hun;Yun, Ji Sun;Nam, Joong Hee;Paik, Jong Hoo;Cho, Jeong Ho
    • Journal of Sensor Science and Technology
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    • v.23 no.2
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    • pp.105-109
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    • 2014
  • Structure and electrical properties of $0.85NaNbO_3-0.15LiNbO_3$ ($(Li_{0.15}Na_{0.85})NbO_3$) ceramics were investigated as a function of sintering temperature. $(Li_{0.15}Na_{0.85})NbO_3$ ceramics were prepared by conventional solid state processing. A main phase of the orthorhombic perovskite structure and secondary phase of $LiNbO_3$ were confirmed for all sintered specimens. Dense $(Li_{0.15}Na_{0.85})NbO_3$ ceramics were obtained at sintering temperature above $1050^{\circ}C$. With increasing sintering temperature, the electromechanical coupling factor ($k_p$), piezoelectric constant ($d_{33}$) and relative dielectric constant (${\varepsilon}_r$) of the sintered specimens increased, while the mechanical quality factor ($Q_m$) decreased. These results are due to the increase of grain size and crystallite size of orthorhombic perovskite structure. Based on the temperature dependence of ${\varepsilon}_r$, stable piezoelectric properties were expected because no phase transition found up to $300^{\circ}C$. Typically, kp of 18%, $d_{33}$ of 34.7 pC/N, ${\varepsilon}_r$ of 135, and $Q_m$ of 62.8 were obtained for the specimens sintered at $1200^{\circ}C$ for 5 h.

Interaction of Co/Nb Bilayer with $SiO_2$ Substrate ($SiO_2$와 Co/Nb 이중층 구조의 상호반응)

  • Gwon, Yeong-Jae;Lee, Jong-Mu;Bae, Dae-Rok;Gang, Ho-Gyu
    • Korean Journal of Materials Research
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    • v.8 no.10
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    • pp.956-960
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    • 1998
  • The interfacial reaction between the CoINb bilayer and the $SiO_2$ substrate in the temperature range of $330^{\circ}C$-$800^{\circ}C$ in a vacuum has been investigated by X-ray photoelectron spectroscopy, glancing angle XRD, Auger Electron Spectroscopy and Atomic force microscopy. The Co and Nb were actively interdiffused at $600^{\circ}C$, and the layer inversion completed at $700^{\circ}C$. NbO was formed by interfacial reaction between the Nb interlayer and the $SiO_2$ substrate, while $Nb_20_5$ was formed on the surface by reaction of Nb with oxygen in the ambients. Free Si atoms obtained by the reaction between Nb and $SiO_2$ formed silicides like CoSi and $Nb_5Si_3$ by reacting with Co and Nb remnants. The sheet resistance of the Co/Nb bilayer increased substantially after annealing at $800^{\circ}C$. which is due to the agglomeration of the Co layer to reduce its surface energy.

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Temperature Dependence of Dielectric Properties of BaTiO$_3$ doped with Nb$_2$O$_5$ and CoO (Nb$_2$O$_5$와 CoO의 복합첨가가 BaTiO$_3$ 유전특성의 온도안전성에 미치는 효과)

  • 최광휘;황진현;한영호
    • Journal of the Korean Ceramic Society
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    • v.35 no.8
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    • pp.864-870
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    • 1998
  • The effect of {{{{ {{Nb }_{2 }O }_{5 } }} and CoO addition on the temperature dependence of the {{{{ {BaTiO }_{3 } }}-based ceramic capa-citor has been studied. X7R with moderate temperature dependence has been developed by means of pre-cisely controlled {{{{ {{Nb }_{2 }O }_{5 } }}/CoO ratio. Dielectric constant(K) and dissipation factor(DF) were 3500 and 1.5% respectively. As the content of {{{{ {{Nb }_{2 }O }_{5 } }} was increased the curie temperature(Tc) was shifted to lower tem-perature and the dielectric constant at Tc was decreased. The proper addition of CoO with {{{{ {{Nb }_{2 }O }_{5 } }} improved the temperature dependence of dielectric properties of the {{{{ {BaTiO }_{3 } }}-based ceramic capacitor.

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Low Temperature Sintering and Dielectric Properties of BiNbO4 and ZnNb2O6 Ceramics with Zinc Borosilicate Glass

  • Kim, Kwan-Soo;Kim, Shin;Yoon, Sang-Ok;Park, Jong-Guk
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.5
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    • pp.201-205
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    • 2007
  • Low temperature sintering behavior and microwave dielectric properties of the $BiNbO_{4^-}$ and the $ZnNb_2O_{6^-}zinc$ borosilicate glass(ZBS) systems were investigated with a view to applying the composition to LTCC technology. The addition of $10{\sim}30$ wt% ZBS in both systems ensured successful sintering below $900^{\circ}C$. For the $BiNbO_{4^-}ZBS$ system, the sintering was completed when 15 wt% ZBS was added whereas 25 wt% ZBS was necessary for the $ZnNb_2O_{6^-}zinc$ system. Secondary phase was not observed in the $BiNbO_{4^-}ZBS$ system but a small amount of $ZnNb_2O_6$ with the willemite structure as the secondary phase was observed in the $ZnNb_2O_{6^-}ZBS$ system. In terms of dielectric properties, the application of the $BiNbO_{4^-}$ and the $ZnNb_2O_{6^-}ZBS$ systems sintered at $900^{\circ}C$ to LTCC were shown to be appropriate; $BiNbO_{4^-}15$ wt% ZBS($\varepsilon_r=25,\;Q{\times}f\;value=3,700GHz,\;\tau_f=-32ppm/^{\circ}C$) and $ZnNb_2O_{6^-}25$ wt% ZBS($\varepsilon_r=15.8,\;Q{\times}f\;value=5,400GHz,\;\tau_f=-98ppm/^{\circ}C$).

Microwave Dielectric Characteristics of $Ba(Mg_{1/3}Nb_{2/3})O_3$ - $La(Mg_{2/3}Nb_{1/3})O_3$ Solid Solutions with Crystal Structure (결정구조에 의한 $Ba(Mg_{1/3}Nb_{2/3})O_3$ - $La(Mg_{2/3}Nb_{1/3})O_3$고용체의 마이크로파 유전 특성)

  • Paik, Jong-Hoo;Lim, Eun-Kyeong;Lee, Mi-Jae;Choi, Byung-Hyun;Nahm, Sahn
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.738-743
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    • 2004
  • The microwave dielectric properties and their related structural characteristics in solid solutions of (1-x) $Ba(Mg_{1/3}Nb_{2/3})O_3$ -x $La(Mg_{2/3}Nb_{1/3})O_3$ (BLMN) have been investigated by measuring the dielectric constant${\varepsilon}r)$, Q value and temperature coefficient of resonant frequency$({\tau}f)$ and by observing the crystal structure using high resolution transmission electron microscopy (HRTEM). Microwave dielectric properties showed characteristic features for specific composition. Dielectric constant$({\varepsilon}r)$ showed maximum value at the composition which corresponds to the phase boundary between 1:2 ordered and 1:1 ordered structure. The increase in ${\varepsilon}_r$ may be caused by the rattling of ions by incorporating smaller ions and the disordered structure. The variation of temperature coefficient of resonant frequency${{\tau}_f)$ was investigated in terms of oxygen octahedra tilting.

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