• Bulletin of the Korean Chemical Society
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• v.34 no.7
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• pp.2171-2175
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• 2013

The electronic structure and elastic properties of the 4d transition metal carbides MC (M = Y, Zr, Nb, Rh) were studied by means of extended H$\ddot{u}$ckel tight-binding band electronic structure calculations. As the valence electron population of M increases, the bulk modulus of the MC compounds in the rocksalt structure does not increase monotonically. The dominant covalent bonding in these compounds is found to be M-C bonding, which mainly arises from the interaction between M 4d and C 2p orbitals. The bonding characteristics between M and C atoms affecting the variation of the bulk modulus can be understood on the basis of their electronic structure. The increasing bulk modulus from YC to NbC is associated with stronger interactions between M 4d and C 2p orbitals and the successive filling of M 4d-C 2p bonding states. The decreased bulk modulus for RhC is related to the partial occupation of Rh-C antibonding states.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.245-251
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• 2017

Niobium doped zirconium oxide (Nb-Zr-O:NZO) thin films were fabricated on Si substrates by a sol-gel technique with an annealing temperatures of $500{\sim}1000^{\circ}C$ in air ($N_2:O_2=3:1$) for 20 minutes. It was found that the NZO film is based on tetragonal $ZrO_2$ polycrystalline structure with the Nb 5+ ion state and there is almost no diffusion of Nb or Zr to Si substrate. The relative dielectric constant for the NZO film with the Nb composition of 30 mol% and annealed at $800^{\circ}C$ was around 40. The root mean roughness was 1.02 nm. In addition, the leakage current of NZO films was as low as $10^{-6}A/cm^2$ at 4.4 V.

• Journal of Korea Foundry Society
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• v.21 no.5
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• pp.280-285
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• 2001

Nb-containing austenitic stainless steel is widely used as exhaust frame and diffuser assembly in power plant. However, this steel is known to be difficult to produce by the continuous casting process due to the surface cracks. Therefore, the continuous casting technology was developed for the prevention of the surface cracks on CC slabs. Precipitates and the analysis of heat trasfer in a slab were investigated in order to find out the formation mechanism of surface cracks on cc slabs It was found that surface cracks are occurred due to the NbC precipitates, which are formed along the grain boundaries around $800^{\circ}C$. The secondary cooling pattern has been developed to produce the defect free CC slabs of Nb-containing austenitic stainless steel.

• Applied Science and Convergence Technology
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• v.25 no.4
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• pp.77-80
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• 2016

The $PbSc_{1/2}Nb_{1/2}O_3$ ceramics at a relatively low temperature of $1300^{\circ}C$ was successful synthesized. Solid state reaction of two-step process is not necessary. The dielectric constant, dielectric loss and admittance of ceramic samples were determined. The pyroelectric characteristics are in good agreement with the dielectric properties. Ferroelectric properties of well-formed the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics are in agreement with broad distribution of relaxation phenomenon. Relatively strong frequency dependent of dielectric constant is observed at about $110^{\circ}C$. The distinct thermal hysteresis was observed in the measurement of the dielectric constant and dielectric loss. The critical exponents of during cooling and heating measurements in the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics were 1.14 and 1.59 at 1 kHz, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.208-213
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• 1998

Microwave dielectric properties of $BiNbO_4$ containing CuO and $V_2O_5$(BN ceramics). BN ceramic with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) was sintered at $900^{\circ}C$ where it is possible for these to be co-fired with Ag electrode. The dielectric constant of 44.3, TCF (Temperature Coefficient of resonance Frequency) of 2 ppm/$^{\circ}$ and Q${\times}f_o$ value (product of Quality value and resonance Frequency) of 22,000GHz could be obtained from those ceramics. It is observed that orthorhombic structure was stable $1000^{\circ}C$. As sintering temperature increases, the dielectric properties decreased. The main reasons were abnormal grain growth and the main peak of triclinic moved from the main peak of orthorhombic.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1370-1373
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• 2003

Specimens of Ti-10Ta-10Nb have been tested for Rockwall hardness after heating to either the $\alpha$+$\beta$ and $\beta$-phase field. And the specific heat and the dilatometer of Ti-10Ta-103Nb swaged have been measured. From the result, the $\beta$ transus of the alloy was determined to be 82$0^{\circ}C$. The hot deformation behavior of Ti-10Ta-10Nb with an $\alpha$+$\beta$ microstructure is modeled in the temperature 75$0^{\circ}C$ and strain rate range 0.001-10$^{-1}$

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1335-1341
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• 1999

The electrical conductivity ($\sigma$) of TiO2 doped with 0.05-4.0mol% Nb2O5 was measured in the oxygen partial pressure range of 10-17 to 100 atm and temperature range of 1100 to 130$0^{\circ}C$ to investigate the electrical properties and defect types. The oxygen partial pressure dependence of the electrical conductivity (log$\sigma$/logPo2) above 110$0^{\circ}C$ was divided into the four regions. From these experimental results the following defect regions were proposed ; 1) Magneli phase(extended defect) 2) reduced rutile region where intrinsic defect predominates 3) nearly stoichiometric region which is independent on the oxygen partical pressure and 4) overstoichiometric region which is not observed in pure TiO2 The electrical conductivity of Nb-doped TiO2 depended on the doping content the oxygen partial pressure and the measuring tem-perature.

• Journal of the Korean institute of surface engineering
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• v.39 no.1
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• pp.43-48
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• 2006

The oxidation behavior and Biocompatibility of pure Ti and Ti-8Ta-3Nb alloy were studied in dry air atmosphere. The specimens showed that Ti-8Ta-3Nb alloy had higher oxidation resistance than pure Ti at $650^{\circ}C$. Cytotoxicity test also revealed that moderate oxidation treatment lower cell toxicity and Ti-8Ta-3Nb alloy showed better results compared with pure Ti. The weight gains during the oxidation increase rapidly at temperature above $600^{\circ}C$.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.138-142
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• 2000

Thin film $LiNbO_3$MFS (metal-ferroelectric-semiconductor) capacitor showed improved characteristics such as low interface trap density, low interaction with Si substrate, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for FRAM (ferroelectric random access memory) applications. RTA (rapid thermal anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60sec. We learned from X-ray diffraction that the RTA treated films were changed from amorphous to poly-crystalline $LiNbO_3$which exhibited (012), (015), (022), and (023) plane. Low temperature film growth and post RTA treatments improved the leakage current of $LiNbO_3$films while keeping other properties almost as same as high substrate temperature grown samples. The leakage current density of $LiNbO_3$films decreased from $10^{-5}$ to $10^{-7}$A/$\textrm{cm}^2$ after RTA treatment. Breakdown electric field of the films exhibited higher than 500 kV/cm. C-V curves showed the clockwise hysteresis which represents ferroelectric switching characteristics. Calculated dielectric constant of thin film $LiNbO_3$illustrated as high as 27.9. From ferroelectric measurement, the remanent polarization and coercive field were achieved as 1.37 $\muC/\textrm{cm}^2$ and 170 kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.371-374
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• 2004

저온동시 소성용(low temperature co-fired ceramics, LTCC) 마이크로파 유전체을 만들기 위해 $Ca(Li_{1/4}Nb_{3/4})O_3$ 마이크로파 유전체 세라믹스에 zinc-borosililcate glass를 첨가하여 소결 특성과 마이크로파 유전 특성을 조사하였다. $Ca(Li_{1/4}Nb_{3/4})O_3$과 $0.7Ca(Li_{1/4}Nb_{3/4})O_3-0.3CaTiO_3$에 zinc-borosilicate를 $5{\sim}30wt%$ 첨가하여 소결한 결과 $875{\sim}925^{\circ}C$에서 동시 소성이 가능한 것으로 확인되었으며 zinc-borosilicate glass의 함량이 증가할수록 저온에서 소성이 가능하였지만 과량의 액상과 2차상이 형성되면서 유전율과 품질계수가 저하되는 경향을 나타내었다. $Ca(Li_{1/4}Nb_{3/4})O_3$에 5wt%의 zinc-borosilicate를 첨가하여 $900^{\circ}C$에서 소성한 결과 가장 우수한 유전 특성$(\epsilon_r=17.45,\;Q{\times}f_0=5487)$을 나타내었고, 유전율을 높이기 위해 $CaTiO_3$를 0.3mol% 첨가한 $0.7Ca(Li_{1/4}Nb_{3/4})O_3-0.3CaTiO_3$에 10wt%의 zinc-borosilicate를 첨가하여 $925^{\circ}C$에서 소성한 결과 가장 우수한 유전특성$(\epsilon_r=44.92,\;Q{\times}f_0=5567)$을 나타내었다.