• 한국재료학회지
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• 제4권7호
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• pp.798-807
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• 1994

$BaTio_{3}$에 Ca가 첨가되면 상온 저항을 증가시키며 이는 $Ca^{2+}$가 $Ti^{4+}$를 치환하여 acceptor 불순물을 형성하기 때문이라고 생각된다. 그러나 $Ca^{2+}$는 $Ti^{4+}$보다 이온 반경이 크므로 그 자리를 치환하지 않는다는 주장도 있다. 본 실험에서는 $BaTiO_{3}$에 의한 acceptor가 존재하는지 알아보기 위하여 Ba/(Ti+Ca+Nb)=1이 되도록 Ca와 Nb를 첨가하여 산소 분압의 변화에 따른 고온 평형 전기 전도도를 측정하였다. 측정은 $1000^{\circ}C$에서 행하였으며 산소 분압은 $10^{-15}$ ~ 1 기압의 범위에서 조절하였다. 첨가된 Ca와 Nb의 농도를 변화시킨 결과, acceptor와 donor의 상호 보상 효과가 나타났다. 즉, Nb에 의한 donor를 보상하는 acceptor가 존재함을 확일하였고, 전도도 곡선의 결함 화학적인 해석에 의하여 Ca가 Ti자리를 치환함을 알았다. 이러한 acceptor의 존재는 ICTS에 의해서도 확인되었다.

• 한국세라믹학회지
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• 제32권6호
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• pp.748-760
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• 1995

Pyroelectric properties, figure of merits, and the other properties of the Pb(Zn1/3Nb2/3)O3-Pb(Fe1/2Nb1/2)O3 system, as expected to have excellent pyroelectric properties in the operating temperature range of pyroelectric type infrared sensor, were investigated. In the Pb(Zn1/3Nb2/3)O3-Pb(Fe1/2Nb1/2)O3 system, suppression of the pyrochlore phase depended on sintering condition, as like sintering temperature, holding time, sintering atmosphere. The specimen, sintered by the same composition atmosphere powder at 105$0^{\circ}C$ for 1.5h, possessed the best physical property. It was found that the piezoelectric parameters were mainly depended on the amount of spontaneous polarization and then the 0.2PZN-0.8PFN showed the best pyro- and piezoelectric properties. In terms of the experimental method, two pyroelectric-testing methods, i.e. static and dynamic methods, had a same tendency. Also the result of pyroelectric testing by the static method indicated that the diffuse phase transitiion resulted in the temperature difference of phase transition between dielectric constant and pyroelectric coefficient.

• 한국세라믹학회지
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• 제37권10호
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• pp.1008-1013
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• 2000

SrTi $O_3$(001) 단결정 기판 위에 졸-겔 스핀코팅으로 $SrBi_2(Ta,Nb)_2O_9$ 박막을 도포하고 그 결정화 과정을 고온 X-선 회절분석 (HTXRD)으로 추적하면서 Pt(111)/Ti/ $SiO_2$/Si 위에 성장한 박막과 비교하였다. SrTi $O_3$(001) 단결정 기판 위에 도포된 $SrBi_2Nb_2O_{9}$ 박막은 fluorite-like phase와 같은 transient phase를 거치지 않고 곧바로 순수한 $SrBi_2Nb_2O_9$ 상으로 결정화가 시작되었으며 결정화가 시작되는 온도인 ${\sim}540^{\circ}C$부터 c축 배향성장하였다. 또한 $SrB i_2(Ta,Nb)_2O_9$ 박막은 Ta/Nb 비에 관계없이 $SrTiO_3$(001) 위에서 모두 $(00{\ell})$로 배향되었으며, 코팅 횟수가 늘어나 필름의 두께가 증가함에 따라 c축 배향성은 미세한 감소를 보였다. $SrBi_2Nb_2O_9/SrTiO_3$단면을 TEM으로 관찰한 결과 $SrBi_2Nb_2O_9$은 대체로 불규칙한 크기의 다결정체로 되어 있었으나 계면 부근에서는 [001]$_{SBN}$//[001]$_{SrTi}$ $O_3$/, [100]$_{SBN}$//[100]$_{SrTi}$ $O_3$/라는 결정학적 관계를 가지며 에피탁샬 성장했음을 알 수 있었다.있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1150-1152
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• 1993

$TiO_2-Nb_2O_5$ thin films are fabricated by Sol-Gel method and their electrical properties have been investigated. The crystalline form is amorphous under $400^{\circ}C$ and is anatase over $500^{\circ}C$. The surface conductivity of films is higher that of $500^{\circ}C$ than that of $600^{\circ}C$.

• 한국분말재료학회지
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• 제15권1호
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• pp.23-30
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• 2008

Ni-20Cr-20Fe-5Nb alloy with or without $Y_2O_3$ was manufactured by mechanical alloying process and consolidated by spark plasma sintering (SPS). The grain size of the alloy with $Y_2O_3$ was smaller than that of alloy without $Y_2O_3$ which results from the effect of $Y_2O_3$ suppressing grain growth. The tensile strength at room temperature was increased by the addition of $Y_2O_3$ but decreased abruptly at temperature above $600^{\circ}C$. It seems to result from the change of deformation mechanism due to fine grain size, that is, grain boundary sliding is predominant at above $600^{\circ}C$ while internal dislocation movement is predominant at below $600^{\circ}C$. After conventional heat treatment process of solution treatment and aging, a small amount of ${\delta}(Ni_3Nb)$ phase was formed in Ni-20Cr-20Fe-5Nb alloy while a large amount of ${\gamma}"(Ni_3Nb)$ was formed in Inconel 718 in the previous report. This is due to exhaustion of Nb content by the formation of NbC during consolidation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.131-134
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• 2002

The effect of the addition on the densification, low temperature sintering, and microwave dielectric properties of the Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$/(CLNT) was investigated. $Bi_2O_3$ additives improved the dencification and reduced the sintering temperature from $1150^{\circ}C$ to $900^{\circ}C$ of CLNT microwave dielectric ceramics. As increasing $Bi_2O_3$ contents, the dielectric constants and bulk density were increased. The quality factor, however, was decreased slighty. The temperature coefficients of the resonant frequency shifted positive value as increasing $Bi_2O_3$ contents. The dielectric properties of Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$ and Ca[($Li_{1/3}Nb_{2/3}$)$_{0.8}Ti_{0.2}$]$O_{3-{\delta}}$ with 5wt% $Bi_2O_3$ sintered at $900^{\circ}C$ for 3h were $\varepsilon_{r}$=20, 35 Q.$f_{0}$=6500, 11,000 GHz, $\tau_{f}$=4, 13 ppm/$^{\circ}C$, respectively.

• 대한치과보철학회지
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• 제43권5호
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• pp.684-693
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• 2005

Statement of problem: Ti-6Al-7Nb alloy is used instead of Ti-6Al-4V alloy that was known to have toxicity. Purpose: This study was performed to investigate the effect of electrolyte concentration on the surface characteristics of anodized and hydrothermally-treated Ti-6Al-7Nb alloy Materials and methods: Discs of Ti-6Al-7Nb alloy of 20 mm in diameter and 2 mm in thickness were polished sequentially from #300 to 1,000 SiC paper ultrasonically washed with acetone and distilled water for 5 min, and dried in an oven at $50^{\circ}C$ for 24 hours. Anodizing was performed at current density $30mA/cm^2$ up to 300 V in electrolyte solutions containing $\beta-glycerophosphate$ disodium salt hydrate $(\beta-GP)$ and calcium acetate (CA). Hydrothermal treatment was conducted by high pressure steam at $300^{\circ}C$ for 2 hours using a autoclave. All samples were soaked in the Hanks' solution with pH 7.4 at $36.5^{\circ}C$ for 30 days. Results and conclusion: The results obtained were summarized as follows: 1. After hydrothermal treatment, the precipitated HA crystals showed the dense fine needle shape. However, with increasing the concentration of electrolyte they showed the shape of thick and short rod. 2. When the dense fine needle shape crystals was appeared after hydrothermal treatment, the precipitation of HA crystals in Hanks' solution was highly accelerated. 3. The crystal structures of $TiO_2$ in anodic oxide film were composed of strong anatase peak and weak rutile peak as analyzed with thin-film X-ray diffractometery. 4. The Ca/P ratio of the precipitated HA layer was equivalent to that of HA crystal in Hanks' solution.

• 한국전기전자재료학회논문지
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• 제16권11호
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• pp.975-978
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• 2003

The microwave dielectric properties and the microstructures on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ doped with $V_2$ $O_{5}$ were systematically investigated. B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics sintered at 920-96$0^{\circ}C$ were mainly consisted of orthorhombic and triclinic phases after addition of $V_2$ $O_{5}$. The apparent density increased slightly with increasing the $V_2$ $O_{5}$ addition. The dielectric constants($\varepsilon$$_{r}$) also increased with $V_2$ $O_{5}$ addition(30-45). The Q${\times}$ $f_{0}$ values measured on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics doped with $V_2$ $O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures were in the range of 920-960[$^{\circ}C$]. It was confirmed that the temperature coefficient of the resonant frequency($\tau$$_{f}$) can be adjusted from a positive value of +10ppm/$^{\circ}C$ to a negative value of -15ppm/$^{\circ}C$ by increasing the amount of $V_2$ $O_{5}$ Based on our experimental results, the B $i_{0.97}$T $m_{0.03}$Nb $O_4$(added $V_2$ $O_{5}$) ceramics can be applied to multilayer microwave devices at low sintering temperatures.ng temperatures.emperatures.ratures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.350-353
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• 2002

The microwave dielectric properties and the microstructures on $Bi_{0.97}Nb_{0.03}O_{4}$doped with $V_{2}O_{5}$ were systematically investigated. $Bi_{0.97}Tm_{0.03}Nb_{0.03}O_{4}$ ceramics sintered at $920-960^{\circ}C$were mainly consisted of orthorhombic and triclinic phases after addition of $V_{2}O_{5}$. The apparent density increased slightly with increasing the $V_{2}O_{5}$ addition. The dielectric $constants(\varepsilon_r)$ also increased with $V_{2}O_{5}$ addition(30-45). The $Q{\times}f_0$ values measured on $Bi_{0.97}Tm_{0.03}NbO_4$ ceramics doped with $V_{2}O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures are in the range of $920-960[^{\circ}C]$. It was confirmed the temperature coefficient of the resonant $frequency(\tau_f)$ can be adjusted from a positive value of $+10[ppm/^{\circ}C]$ to a negative value of $-15ppm/^{\circ}C$ by increasing the amount of $V_{2}O_{5}$. Based on our experimental results, the Bi0.97Tm0.03NbO4(added V2O5) ceramics can be applied to multilayer microwave devices at low sintering temperatures.

• 대한전기학회논문지
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• 제44권8호
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• pp.1068-1074
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• 1995

Effect of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ addition on the phase changes and microwave dielectric properties of BaTi $O_{3}$-3Ti $O_{2}$ ceramics were investigated. Addition of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ to BaTi $O_{3}$-3Ti $O_{2}$ resulted in the formation of Ba $Ti_{4}$$O_{9}$, $Ba_{2}$ $Ti_{9}$ $O_{20}$, Ba(Zn$_{1}$3/Nb$_{2}$3/) $O_{3}$, and Ti $O_{2}$ phases. Ba $Ti_{4}$$O_{9}$ phase was gradually transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$. This was identified by XRD and microstructure. As the Ba $Ti_{4}$$O_{9}$ phase transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$ phase, the dielectric constant increased to 37.5. Q*f$_{o}$ value was 40000 at x=0.04, and the temperature coefficient of resonant frequency was +10ppm/.deg. C.C.. C.C.