• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.378.1-378.1
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• 2014

In this study, we investigated that the resistance switching characteristics of Nb-doped HfO2 films with increasing Nb doping concentration. The Nb-doped HfO2 based ReRAM devices with a TiN/Nb-doped HfO2/Pt/Ti/SiO2 were fabricated on Si substrates. The Nb-doped HfO2 films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16sccm, O2: 24sccm). Microstructure of Nb-doped HfO2 films and atomic concentration were investigated by XRD, TEM, and XPS, respectively. The Nb-doped HfO2 films showed set/reset resistance switching behavior at various Nb doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased in doped HfO2 films. However, the switching properties of Nb-doped HfO2 were changed above the specific doping concentration of Nb. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen and micro-structure of Nb-doped HfO2.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.486-492
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• 1998

The amorphous Co-based magnetic films have a large saturation flux density, a low coercive force, and a zero magnetostriction constant. Therefore, they have been studied for application to magnetic recoding heads and micro magnetic devices. However, it was found that the magnetic anisotropy was changed for each film fabrication processes. In this study, we investigated how to control the anisotropy of sputtered amorphous $Co_{89}Nb{8.5}Zr{2.5}$ films. After deposition, the rotational field annealing ant the uniaxial field annealing were performed under the magnetic field of 1.5 kOe. the annealing was done at the temperature range from 400 to $600^{\circ}C$ for one hour. As-deposited amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin film had saturation magnetization ($4\piM_5$) of 0.8 T, coercive force($_IH_C$) of 1.5 Oe, and anisotropy field($H_k$) of 11 Oe. The amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin films annealed by rotational field annealing at $500^{\circ}C$ for one hour was found to be isotropy, and $4\piM_5$ of 0.9 T was obtained from these films, Also, the magnetic anisotropy of as-deposited films could be controlled by uniaxial field annealing at $400^{\circ}C$ for one hour. Anisotropy field($H_k$) of 17 Oe and $4\piM_5$ of 1.0 T were obtained by this method.

• Journal of Technologic Dentistry
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• v.26 no.1
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• pp.97-104
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• 2004

A new Ti-10Ta-10Nb alloy has designed and examined some possibility of forming more passive oxide film by oxidation treatment which is closely related to corrosion resistance and biocompatibility. Ti-6Al-4V and Ti-10Ta-10Nb alloys were prepared by consumable vacuum arc melting and homogenized at 1050$^{\circ}C$ for 24hours. Alloy specimens were oxidized at the temperature range of 400 to 750$^{\circ}C$ for 30minutes, and the oxide films on Ti alloys were analysed by optical microscope, SEM, XPS and TGA. Cytotoxicity test was performed in MTT assay treated L929 fibroblast cell culture by indirect method. It is found out that the oxide film on Ti-10Ta-10Nb alloy is denser and thinner compared to Ti-6Al-4V alloy. The weight gain during the oxidation was increased rapidly at the temperature above 650$^{\circ}C$ for Ti-6Al-4V alloy and above 700$^{\circ}C$ for Ti-10Ta-10Nb alloy respectively. It was analysed that the passive film of the Ti alloys consisted of TiO2 through X-ray photoelectron spectroscopy (XPS) analysis. It is found out by cytotoxicity test that moderate oxidation treatment lowers cell toxicity, and Ti-10Ta-10Nb alloy showed better result compared to Ti-6Al-4V alloy.

• Corrosion Science and Technology
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• v.2 no.3
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• pp.117-126
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• 2003

Due to excellent corrosion resistance and mechanical properties, austenitic stainless steel is widely used as the material for chemical plants. nuclear power plants, and food processing facilities. But, the zone affected by heat in the range of 400 to $800^{\circ}C$ during welding loses corrosion resistance and tensile strength since Cr-carbide precipitation like $Cr_{23}C_6$ forms at the grain boundary and thereby takes place the intergranular corrosion. In this study, AISI 304 stainless steel with the added Nb of 0.3 to 0.7 wt% was solutionized at $1050^{\circ}C$ and sensitized at $650^{\circ}C$. Specimen was welded by MIG. The phase and the microstructure of the specimens were examined by an optical microscope, a scanning electron microscope, and a x-ray diffractometer. The corrosion characteristics of specimens were tested by electrolytic etching and by double loop electrochemical potentiokinetic reactivation method(EPR) in the mixed solution of 0.5M $H_2SO_4$ + 0.01M KSCN. The melting zone had dendritic structure constituted of austenitic phase and $\delta$-ferrite phase. Cr carbide at the matrix did not appear, as Nb content increased. At the grain boundaries of the heat affected zone, the precipitates decreased and the twins appeared. The hardness increased, as Nb content increased. The hardness was highest in the order of the heat affected zone>melted zone>matrix. According to EPR curve, as the Nb content decreased, the reactivation current density(Ir) and the activation current density(la) were highest in the order of the melted zone

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.316-327
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• 1997

Polycrystalline $Sr_{2}Nb_{2}O_{7}$ and $La_{2}Ti_{2}O_{7}$ ceramics with very high Curie temperatures were synthesized by the chemical coprecipitation method (CCP). The powders synthesized were identified by XRD and their sintering behavior and physical properties were studied. The grain-orientation and electrical properties of sintered ceramics were investigated as a function of firing temperature. Single phase could be obtained by CCP method at temperature lower than that of the conventional method by 100 - $150^{\circ}C$. Strontium niobate, $Sr_{2}Nb_{2}O_{7}$, powder was Prepared by CCP method at temperatures as low as $800^{\circ}C$ via intermediate phase of $Sr_{5}Nb_{4}O_{15}$ formed at $700^{\circ}C$. The resulting CCP-derived powder was observed to have finer and more uniform particle size distribution than those obtained through the conventional or the molten salt synthesis method. Sintering of CCP-derived $Sr_{2}Nb_{2}O_{7}$ powder at $1500^{\circ}C$ yielded a highly dense ceramics with 97% theoretical density. Very high grain-orientation developed along the (0k0) direction was observed by SEM, which resulted in anisotropic dielectric properties of the sintered samples, with the dielectric constant values approaching those for single crystal.

• Journal of the Korean Magnetics Society
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• v.3 no.2
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• pp.130-134
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• 1993

The magnetic properties of the amorphous $Fe_{73.5-X}Co_{X}Cu_{1}Nb_{3}Si_{13.5}B_{9}(x=2,\;4)$ alloys, fabricated by a single roll rapid quenching technique and annealed at $400~650^{\circ}C$, have been investigated. The optimum annealing temperature is $550^{\circ}C$ for the amorphous $Fe_{71.5}Co_{2}Cu_{1}Nb_{3}Si_{13.5}B_{9}$ alloy. The properties of the nanocrystalline $Fe_{71.5}Co_{2}Cu_{1}Nb_{3}Si_{13.5}B_{9}$ alloy show the relative permeability of $1.1{\times}10^{4}$ and the coercive force of 0.22 Oe at 1 kHz. When annealed at $600^{\circ}C$, the nanocrystalline $Fe_{69.5}Co_{4}Cu_{1}Nb_{3}Si_{13.5)B_{9}$ alloy shows the relative permeability of $1.0{\times}10^{4}$ and the coercive force of 0.19 Oe at 1 kHz. From the X-ray measurement, it is found that the remarkably improved soft magnetic properties are the effect of the formation of $\alpha$-Fe(Si) grain. By the results of FMR exper-imeIlt, the optimum annealing condition is just below temperature which the peak-to-peak line width of FMR spectrum increase rapidly.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.290-293
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• 2001

The SrBi$_2$Nb$_2$O$_{9}$ (SBN) thin films were deposited on p-type(100) Si substrates by rf magnetron sputtering to confirm the Possibility of Pt/SBN/Si structure for the application of nondestructive read out ferroelectric random access memory (NDRO- FRAM). The SBN thin films were deposited by co-sputtering method with Sr$_2$Nb$_2$O$_{7}$ (SNO) and Bi$_2$O$_3$ ceramic targets. The SBN thin films deposited at room temperature were annealed at $700^{\circ}C$ for 1hr in $O_2$ ambient. The structural and electrical properties of SBN with different power ratios of targets were measured by x-ray diffraction(XRD), scanning electron microscopy(SEM), capacitance-voltage(C-V), and current-voltage(I-V). The C-V curves of the SBN films showed hysteresis curves of a clockwise rotation showing ferroelectricity. When the Power ratio of the SNO/Bi$_2$O$_3$ targets was 120 W/100 W, the SBN thin films had excellent electrical properties. The memory window of SBN thin film was 1.8 V-6.3 V at applied voltage of 3 V-9 V and the leakage current density was 1.5 $\times$ 10$^{-7}$ A/$\textrm{cm}^2$ at applied voltage of 5 V The composition of SBN thin films was analysed by electron probe X-ray micro analyzer(EPMA) and the atomic ratio of Sr:Bi:Nb with pawer ratio of 120 W/100 W was 1:3:2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.657-661
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• 2002

PZT powder was prepared by partial oxalate method using $(Zr_{0.53}Ti_{0.47})O_2$, $Pb(NO_3)_2$ and $(COOH)_2{\cdot}2H_2O$ as a precipitant. $Nb_2O_5$ additive effect on microstructure and piezoelectric properties of PZT ceramics were investigated. The coexistence of rhombohedral and tetragonal phases of PZT ceramics at the sintering temperature of $1100^{\circ}C$ was revealed from the X-ray diffraction patterns. The grain size PZT ceramics was decreased with the increase $Nb^{5+}$. and the sinterbility of PZT ceramics was decreased with the increase $Nb^{5+}$ addition. The electromechanical coupling factors $K_p$ show above 0.60 at $1100^{\circ}C$ sintering temperature by $Nb_2O_5$ addition above 0.6mol%.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1101-1108
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• 1996

No-doped PZT thin films have been fabricated on Pt/Ti/SiO2/Si substrate using Sol-Gel technique. A fast annealing metho (three times of intermediate and final annealing) was used for the preparation of multi-coated 1800$\AA$ thick Nb-doped PZT thin films. As Nb doping percent was increased leakage current was lowered approximately 2 order but dielectic properties were degraded due to the appearance of pyrochlore phase and domain pinning. Futhermore the increase of the final annealing temperature up to 74$0^{\circ}C$lowered the pyrochlore phase content resulting in enhancing the dielectric properties of the Nb doped films. The 3%-Nb doped PZT thin films with 5% excess Pb showed a capacitance density of 24.04 fF/${\mu}{\textrm}{m}$2 a dielectric loss of 0.13 a switchable polarization of 15.84 $\mu$C/cm2 and a coercive field of 32.7 kV/cm respectively. The leakage current density of the film was as low as 1.47$\times$10-7 A/cm2 at the applied voltage of 1.5 V.

• Journal of the Korean Society for Heat Treatment
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• v.16 no.2
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• pp.83-89
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• 2003

As a research for developing fine-grained high strength low carbon steels, the effects of austenitization temperature and hot deformation on microstructure was investigated in 0.15 wt.% carbon steels with microalloying elements such as Nb and Ti. When the steels were reheated at $1250^{\circ}C$, Nb containing steel showed very coarse austenite grain size of $200{\mu}m$ whereas Nb-Ti steel did fine one of $70{\mu}m$ because Ti carbonitrides could suppress the austenite grain growth. In case of 50% reduction at $850^{\circ}C$, the austenite grains in the Nb steel partially recrystallized while those in the Nb-Ti steel fully recrystallized probably due to finer prior austenite grains.For the Nb-Ti steel, ferrite grain size was not sensitively changed with austenitization temperature and compression strain and, severe deformation of 80% reduction was not essentially necessary to refine ferrite grains to about $3{\mu}m$ which could be obtained through lighter deformation of 40% reduction.