• Korean Journal of Crystallography
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• v.17 no.1
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• pp.24-32
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• 2006

The microwave dielectric properties of $Zn_3Nb_2O_8\;with\;V_2O_5$ addition were investigated. The addition of $V_2O_5$ enhanced the sinterability of $Zn_3Nb_2O_8$, which resulted in high density of $Zn_3Nb_2O_8$ ceramic greater than 95% of the theoretical value when sintered at $900^{\circ}C$ for 4 hours. X-ray diffraction analysis of sintered $Zn_3Nb_2O_8$ ceramic showed no second phase with $V_2O_5$ addition. Dielectric permittivity(${\varepsilon}_r$) and quality factor($Q{\times}f$) varied with both density at different sintering temperature and $V_2O_5$ addition. Dielectric permittivity, quality factor and temperature coefficient($T_{cf}$) of the two mole of $V_2O_5\;added\;Zn_3Nb_2O_8$ that was sintered at $900^{\circ}C$ were 21.4, 40,000, $-54ppm/^{\circ}C$, respectively.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.2 no.4
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• pp.239-244
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• 2004

In order to enhance an oxidation resistance of the pure uranium metal under air condition, a small quantity of niobium(Nb) which is known to mitigate metal oxidation is added into uranium metal as an alloying element. A simulated metallic uranium alloy, U-Nb has been fabricated and then oxidized in the range of 200 to $300^{\circ}C$ under the environment of the pure oxygen gas. The oxidized quantity in terms of the weight gain(wt%) has been measured with the help of a thermogravimetric analyzer. The results show that the oxidation resistance of the U-Nb alloy is considerably enhanced in comparison with that of the pure uranium metal. It is revealed that the oxidation resistance of the former with the niobium content of 1, 2, 3, and 4 wt% is : 1) 1.61, 7.78, 11.76 and 20.14 times at the temperature of $200^{\circ}C$ ; 2) 1.45, 5.98, 10.08 and 11.15 times at $250^{\circ}C$ ; and 3) 1.33, 4.82, 8.87 and 6.84 times at $300^{\circ}C$ higher than that of the latter, respectively. Besides, it is shown that the activation energy attributable to the oxidation is 17.13~21.92 kcal/mol.

• Journal of the Korean institute of surface engineering
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• v.37 no.2
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• pp.119-127
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• 2004

In order to develop the corrosion and wear resistance of stainless steels, effects of plasma-nitriding on the surface characteristics of stainless steels containing Nb were investigated by utilizing a potentiostat. It was found that plasma nitriding at $350^{\circ}C$, compared with $500^{\circ}C$, produced a good corrosion resistance as nitriding time increased, whereas stainless steel containing low Nb content showed that pitting potential and corrosion potential decreased.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1885-1887
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• 1999

본 연구에서는 $BaTiO_3$를 기본조성으로하는 반도성 세라믹스인 PTC 써미스터에 $Nb_2O_5$을 미량 첨가하여 미세구조 및 PTCR의 전기적 특성에 대해서 연구하였다. 또한 복소 임피던스 측정을 통하여 $Nb_2O_5$ 첨가에 따른 grain, grain boundary 저항변화에 대해서도 고찰하였다. $(Ba_{0.9}Sr_{0.05}Ca_{0.05})TiO_3-0.01SiO_2-0.001MnCO_3$를 기본조성으로 하여 $Nb_2O_5$ 첨가량을 $0.15{\sim}0.2mol%$까지 변화시켰으며 소결조건은 소결온도 $1350^{\circ}C$, 2h 유지하였으며 냉각속도는 $100^{\circ}C/h$로 하였다 첨가된 Nb의 양이 증가할수록 grain의 크기는 점차로 작아졌으며 상온저항과 peak 저항이 함께 증가하였다. 0.15mol% 첨가된 시편의 경우 상온저항은 $19[\Omega]$이었으며 peak 저항은 $5{\times}10^6[{\Omega}]$정도가 되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.662-665
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• 2002

The microwave dielectric properties and the microstructures of $Tm_2O_3$-modified $BiNbO_4$ ceramics were investigated. $Bi_{(1-x)}Tm_xNbO_4$ ceramics combined with orthorhombic and triclinic phases were identified at sintering temperatures of $920{\sim}960^{\circ}C$. The apparent density decreased slightly with the increasing Tm content. Regardless of the Tm content the dielectric constant $(\varepsilon_r)$ of all compositions except x=0.1 in $Bi_{(1-x)}Tm_xNbO_4$ ceramics saturated at the range of 42~44. The $Q{\times}f_0$ values of 6,000-12,000(GHz) were obtained for all compositions when the sintering temperatures were in the range of $920{\sim}960^{\circ}C$. The temperature coefficient of the resonant frequency$(\tau_f)$ can be also adjusted with increasing the amount of the doped Tm from a positive value of $+15ppm/^{\circ}C$ to a negative value of $-20ppm/^{\circ}C$. The $Bi_{(1-x)}Tm_xNbO_4$ ceramics can be possibly applied to multilayer microwave devices with low processing temperatures.

• Journal of Mechanical Science and Technology
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• v.18 no.12
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• pp.2204-2208
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• 2004

Ti-8Ta-3Nb has been developed as a new biomaterial. The experimental specimens are as-cast and forged Ti-8Ta-3Nb alloys. Treatment in a solution, ranging from 760 to 960$^{\circ}C$ has carried out. The microstructural research has carried out after the solution treatment and the hardness was measured. The specific heat and the length variations of Ti-8Ta-3Nb were also measured. The optimum temperature for the solution heat treatment of Ti-8Ta-3Nb was found to be 880$^{\circ}C$. This was based on the mechanical properties and the volume fraction of ${\alpha}$ phase and their phases shown from the results of the solution heat treatment. From the results, the ${\beta}$ transition temperature of Ti-8Ta-3Nb was found to be between 860$^{\circ}C$ and 880$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.196-197
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• 2005

The $ZnNb_2O_6$ ceramics with 3wt% CuO and $B_2O_2$(1,3,5wt%) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1000^{\circ}C\sim1050^{\circ}C$ for 3hr. in air. The structural properties were investigated with sintering temperature by XRD and SEM. Also, the microwave dielectric properties were investigated with sintering temperature. Increasing the sintering temperature, the peak of second phase ($Cu_3Nb_2O_8$) was increased. But no significant difference was observed as sintering temperature. In the $ZnNb_2O_6$ ceramics with 3wt% CuO and 5wt% $B_2O_3$ sintered at $1025^{\circ}C$ for 3hr, the dielectric constant, quality factor, temperature coefficient of the resonant frequency were 22.92, 20,271GHz, -14.27ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.39-39
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• 2003

텅스텐브론즈 세라믹스의 결정구조는 산소 팔면체를 뼈대로 각각 다른 형태의 A, C, B 양이온 자리로 이루어져 있다. A, C의 양이온 자리는 알카리 이온 또는 알카리 토금속 이온으로 채워지며, B 자리는 Nb 또는 Ta 이온으로 채워지게 된다. 이 중 A와 C 자리가 채워지는 정도로 unfilled, filled, completely filled 텅스텐브론즈로 나누어지게 된다. completely filled 텅스텐브론즈의 대표적인 물질인 $K_3Li_2Nb_5O_{15}$(KLN)는 전광특성, 비선형 광학특성으로 인하여 다양한 광소자로의 응용과 압전 특성, 초전 특성을 이용한 압전 소자로의 응용이 가능한 재료로 보고되고 있다. 하지만 이러한 꽉 찬 결정구조로 인하여 KLN의 경우 한정된 고용영역을 가지고 있어 물리적 성질의 변화가 제한되어 있는데, 이를 극복하기 위한 여러 가지 시도가 있었다. 이 중 A 자리와 C 자리를 치환하는 연구는 많이 알려져 있으나 치환시 빈 자리를 수반하는 경우가 대부분이다. 반면, B 자리를 치환하는 연구는 Nb를 Ta로 치환하는 경우가 알려져 있는데 이 경우 결정내에 빈자리가 생성되지 않는다. 이들 연구는 모두 단결정의 경우에 국한되어 있으며 단결정 제조시에는 조성을 정확히 조정하기 어렵고, 냉각시 crack이 발생하는 등의 문제를 가지고 있어 그 응용이 제한되고 있다. 따라서 본 연구에서는 KLN 다결정 세라믹스에서 Nb를 Ta으로 치환하여 치환에 따른 상변화와 치밀화 거동, 그리고 이에 따른 전기적 특성을 조사하여 이들 간의 상관관계를 조사하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.235-238
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• 1998

Ferroelectric $LiNbO_3$ thin films were grown directly on Si(100) substrates by 13.55MHz RF magnetron sputtering system using a ceramic target ($Nb_2O_5/Li_2C0_3$ = 51.4/48.6). Because high temperature process have to avoided to prevent degradation of the interface (insulator/Si), $LiNbO_3$ thin films were deposited below $300^{\circ}C$. After as-deposited films were performed RTA treatments in an oxygen ambient at $600^{\circ}C$ for 60s, electrical measurements performed films before and after anneal treatment. In high field region, the leakage current density of the films after annealing was deceased about 4order and the resistivity of these was increased to about 5\times 10^{11} \Omega \cdot cm$ at 500kV/cm. In accumulation region of C-V curve, we calculated dielectric constant of thin film $LiNbO_3$ as 27.9 which is close to that of bulk value.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.67-69
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• 2004

ZnO varistor ceramics which were fabricated with variation of added of 0.01, 0.02, 0.03, 0.05, 0.1mol% $Nb_2O_5$ sintered at $1150^{\circ}C$. In the specimen added 0.05mol% $Nb_2O_5$, sintered density was $5.87g/cm^3$ and electrical properties were superior to any other components. The nonlinear coefficient was 75, and clamping voltage ratio was 1.40. And, endurance surge current in the specimen added 0.05mol% $Nb_2O_5$ was $6500A/cm^2$, and deviation of varistor voltage was -1.7%. As P.C.T and T.C.T environment test were succeed in all specimens, and deviation of varistor voltage in the specimen added 0.3mol% $Nb_2O_5$ was -0.81%. All specimens showed a good leakage current property in the High Temperature Continuous Load Test for 1000hr, at $85^{\circ}C$, and variation rate of the varistor voltage was -1.71%.