• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.327-328
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• 2006

본 연구에서는 0-3 타입의 압전 세라믹 - 고분자 복합소재를 제조하기 위해서 $Pb(Zr_{0.54}Ti_{0.48})O_3$ + 0.2 wt% $Cr_2O_3$ + 1 wt% $Nb_2O_5$ 조성을 기본 조성으로 하여, 세라믹-고분자 첨가량에 따른 복합소재의 전기적 특성과 여러 분극조건, 즉 분극온도, 분극시간, 분극전압 변화에 의한 압전 특성을 고찰하였다. 세라믹 첨가비율이 증가함에 따라 유전상수와 압전상수($d_{33}$)는 증가하였으며, 전압상수($g_{33}$)는 급격히 감소하는 경향을 보였으며, 분극시간과 분극전압도 전기적 특성에 영향을 주는 것을 확인하였다. 분극전압 5KV 인가한 고분자 15% 첨가한 복합 소재에서 유전상수 13, 압전상수 $d_{33}$ 23(${\ast}10^{-12}C/N$), 전압상수 $g_{33}$ 170($10^{-3}v.m/N$)의 우수한 특성을 나타내었다.

• Economic and Environmental Geology
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• v.56 no.6
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• pp.745-764
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• 2023

In the Republic of Congo, Banded iron formations (BIFs) occur in two areas: the Chaillu Massif and the Ivindo Basement Complex, which are segments of the Archean Congo craton outcropping in the northwestern and southwestern parts of the country. They show interesting potential with significant mineral resources reaching 2 Bt and grades up to 60% Fe. BIFs consist mostly of oxide-rich facies (hematite/magnetite), but carbonate-rich facies are also highlighted. They are found across the country within the similar geological sequences composed of amphibolites, gneisses and greenschists. The Post-Archean Australian Shale (PAAS)-normalized patterns of BIFs show enrichment in elements such as SiO₂, Fe₂O₃, CaO, P₂O₅, Cr, Cu, Zn, Nb, Hf, U and depletion in TiO₂, Al₂O₃, MgO, Na₂O, K₂O, Sc, Th, Ba, Zr, Rb, Ni, V. REE diagrams show slight light REEs (rare earth elements; LREEs) compared to heavy REEs (HREEs), and positive La and Eu anomalies. The lithological associations, as well as the very high (Eu/Eu^*)_SN ratios> 1.8 shown by the BIFs, suggest that they are related to Algoma-type BIFs. The positive correlations between Zr and TiO₂, Al₂O₃, Hf suggest that the contamination comes mainly from felsic rocks, while the absence of correlations between MgO and Cr, Ni argues for negligeable contributions from mafic sources. Pr/Pr^* vs. Ce/Ce^* diagram indicates that the Congolese BIFs were formed in basins with redox heterogeneity, which varies from suboxic to anoxic and from oxic to anoxic conditions. They were formed through hydrothermal vents in the seawater, with relatively low proportions of detrital inputs derived from igneous sources through continental weathering. Some Congolese BIFs show high contents in Cr, Ni and Cu, which suggest that iron (Fe) and silicon (Si) have been leached through hydrothermal processes associated with submarine volcanism. We discussed their tectonic setting and depositional environment and proposed that they were deposited in extensional back-arc basins, which also recorded hydrothermal vent fluids.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.19-23
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• 2018

In a Pb-included piezoelectric composition, $Sr_yPb_{1-y}[(Zn_{1/3}Nb_{2/3})_x-(Ni_{1/3}Nb_{2/3})_{0.2}-(Zr_{0.46}Ti_{0.54})_{0.8-x}]O_3$ was selected in order to attain high piezoelectric properties. According to the PZN ratio (x) and the amount of Sr doping (y), the crystal structure, microstructure and piezoelectric properties were measured and evaluated. In the case of Sr 4 mol% doping, the piezoelectric properties were the highest for a PZN ratio of 0.1. In this condition, the grain size was larger and the intensity was higher. With the PZN ratio fixed and varying the Sr doping, the piezoelectric properties increased until 10 mol% doping and then decreased for over 12 mol% doping. In the case of x＝0.1 and y＝10 mol%, the best piezoelectric properties were obtained, i.e., $d_{33}=660pC/N$ and $k_p=68.5%$, and these values seem to be related to the grain size and crystal structure.

• The Journal of the Petrological Society of Korea
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• v.4 no.1
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• pp.31-48
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• 1995

The Jurassic Kwanaksan stock, so far known to be composed of biotite granite only, has the mineral assemblage of quartz+K-feldspar+plagioclase+biotite${\pm}$gernet. The lithology of the stock is classified as alkali feldspar granite by their mode and plagioclase compositions (An<5). Subsolvus feldspars, rather early crystallization of biotite, and shallow emplacement depth estimated from Q-Ab-Or diagram suggest hydrous nature of the magma, which contrasts with anhydrous A-type like geochemistry described below. Major and trace element compositions of the Kwanaksan stock are distinct from those of the adjacent Seoul batholith, suggesting a genetic difference between the two, The Kwanaksan stock shows geochemical characteristics similar to A-type granite in contrast to most other Mesozoic granites in Korea, in that it has high $SiO_2$(73~78wt%), $Na_2O+K_2O$, Ga(27~47 ppm). Nb(22~40 ppm), Y(48~95 ppm), Fe/Mg and Ga/Al, and low CaO(<0.51 wt%). Ba (8~75 ppm) and Sr(2~23 ppm). However, it has lower Zr and LREE and higher Rb(384~796 ppm) than typical A-type granite. LREE-depleted rare earth element pattern with strong negative Eu anomaly of previous studies is reinterpreted as representing source magma characteristics. The residual material during partial melting is not compatible with pyroxenes, amphibole or garnet, while significant amount of plagioclase is required. Similarity of geochemistry of the Kwanaksan stock to A-type granite suggests the origin of the stock has a chose relationship with that of A-type granite. These observations lead us to propose that the Kwanaksan stock was formed by partial melting of felsic source rock.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.20-25
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• 2001

To develop the piezoelectric actuator, the structural, dielectric and piezoelectric properties and electric fieldinduced strain of the ceramics(Pb$\_$1-2/Ba$\_$x/)[Mg$\_$1/2/W$\_$1/2/)$\_$0.03/-Ni$\_$1/3/Nb$\_$2/3/)$\_$0.12/-(Zr$\_$0.5/Ti$\_$0.5/)$\_$0.85/]O$_3$(x=0, 0.01, 0.03, 0.05, 0.07, 0.1) were investigated with the substitution of Ba. The tetragonality of crystal structure and grain size decreased by the substitution of Ba. Curie temperature decreased due to the decrease of the tetragonality, and dielectric constants increased with the substitution of Ba. The coercive field, remnant polarization and electromechanical coupling factor also decreased, whereas the piezoelectric constatns d$\_$33/ and d$\_$31/ were showed the highest value of 430 and 209(x10$\^$-12/C/N), respectively, because of the increase of dielectric constant. The strain induced by 60Hz AC electric field had the maximum value of 204x10$\^$-6/Δℓ/ℓ at the substitution of Ba 3mol%. As the applied electric field approaches to the coercive field, the piezoelectric element is depolarized and the electric field induced strain revealed non-linearity.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.877-885
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• 1997

The dependence of strength, crack growth, fracture mode and degree of domain rearrangement of PZT ceramics on poling strength were studied. The PZT [(Pb0.94Sr0.06)(Zr0.46Ti0.54)O3+Nb(trace)] specimens were poled at 0, 0.5, 1.0, 1.5, 2.0, 2.5, 3.0 kv/mm, and the strength of the specimens was measured by 3 point flexure system. The bending strength of the specimen decreased in different modes according to the bending directions; xz, zx and yz plane direction with x axis of the poling direction in Cartesian coordinate system. The strength differences between the directions increased as the poling strength increased. The fracture mode transferred to intergranular fracture mode from transgranular one as the poling strength increased. The mechanical breakdown occurred when the poling strength higher than 3 kV/mm was applied to the specimen. It was observed that the crack length increased in the normal direction to the poling direction, however, decreased in the parallel direction to the poling direction when the poled PZT specimen was indented by the Vickers indenter. However, the crack produced by indentation continuously was continuously increased little by little after indentation on the specimen. The domain rearrangement occurred as the poling strength increased and the domains were rearranged more effectively when the electric field was continuously increased little by little.

• Proceedings of the Acoustical Society of Korea Conference
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• 1985.10a
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• pp.43-46
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• 1985

In this paper, the SAW Comb filter which consists of 1 apodized IDT, 2 uniform IDTs, and the grating reflector is studied. The apodized IDT is designed by utilizing the Chebyshev window function, and the output IDTs are arrayed with 0.5$\mu$sec time delay to obtain the Comb characteristics. And also the frequency response below the first peak is sufficiently suppressed by the grating reflector which is constituted 180 electrodes. In experiment the SAW Comb filter is fablicated by depositing Al on the surface of YZ-LiNbO3 substrate. As the experimental result, the frequency characteristics of the SAW Comb filter are consistent with theoretical values in admitted errors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.119-119
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• 2008

The electrical characteristics of Metal-Ferroelectric-Nitride-Oxide-Silicon (MFNOS) structure is studied and compared to the conventional Silicon-Oixde-Nitride-Oxide-Silicon (SONOS) capacitor. The ferroelectric blocking layer is SrBiNbO (SBN with Sr/Bi ratio 1-x/2+x) with the thickness of 200 nm and is fabricated by the RF sputter. The memory windows of MFNOS and SONOS capacitors with sweep voltage from +10 V to -10 V are 6.9 V and 5.9 V, respectively. The effect of ferroelectric blocking layer and charge trapping on the memory window was discussed. The retention of MFNOS capacitor also shows the 10-years and longer retention time than that of the SONOS capacitor. The better retention properties of the MFNOS capacitor may be attributed to the charge holding effect by the polarization of ferroelectric layer.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.29-32
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• 2000

Meta1-ferroelectric-insulator-semiconductor(MFIS) devices using Pt/LiNbO$_{3}$/AIN/Si structure were successfully fabricated. AIN thin films were made into metal-insulator-semiconductor(MIS) devices by evaporating aluminum in a dot array on the film surface. The dielectric constant of the AIN film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V ) characteristic is 8. The gate leakage current density of MIS devices using a aluminum electrode showed the least value of 1$\times$10$^{-8A}$ $\textrm{cm}^2$ order at the electric field of 500㎸/cm. A typica] value of the dielectric constant of MFIS device was about 23 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 500㎸/cm was about 5.6$\times$ 10$^{13}$ $\Omega$.cmcm

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.343-343
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• 2008