• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.45.2-45
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• 2002

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.174.2-174
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• 2002

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.29.1-29.1
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• 2000

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1809-1811
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• 2000

High power piezoelectric materials are presently being extensively developed for applications such as ultrasonic motors and piezoelectric transformer In this study, the piezoelectric and dielectric properties of $MnO_2$ doped $0.36Pb(Sc_{1/2}Nb_{1/2})O_{3}-0.25Pb(Ni_{1/3}Nb_{2/3})O_{3}-0.39PbTiO_3$ (hereafter PSNNT), which is the morphotropic phase boundary composition of the PSN-PNN-PT system were investigated. $MnO_2$-addition into the $0.36Pb(Sc_{1/2}Nb_{1/2})O_{3}-0.25Pb(Ni_{1/3}Nb_{2/3})O_{3}-0.39PbTiO_3$ composition increases the piezoelectric coefficient up to $k_{p}{\fallingdotseq}$55.6[%] and $Q_{m}{\fallingdotseq}$252. Moreover, $MnO_2$ addition makes tetragonal phase more stable with respect to rhombohedral phase.

• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.315-320
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• 1988

The Nb doped BaTiO3 was synthesized by coprecipitation method using H2O2 media in region from pH 8 to pH 11. The powder prepared by using this method was crystallized at about 20$0^{\circ}C$ and average particle size was controlled by heat treatment. Because of preparation having fine particle and relatively narrow particle size distribution, high performance PTC device was made of these precipitated powders.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.471-478
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• 2011

Investigations of crystal structure and phase transition of $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics doped with A-site substitution impurity (La, Nd) or B-site substitution impurity (Sb, Nb) at 2 mol% concentration were carried out. X-ray diffraction patterns of impurities doped $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics have been measured at pressures up to ~5 GPa with diamond anvil cell and synchrotron radiation. The patterns were obtained at room temperature using methanol-ethanol mixture as pressure-transmitting media. In order to refine the crystal structure, Rietveld analysis has been performed. The structures of impurities doped $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics are tetragonal in space group P4mm at ambient pressure and are transformed into a cubic phase in space group Pm$\bar{3}$m as the pressure increases. In this study, when A-site substitution donor $La^{3+}$ or $Nd^{3+}$ ion was added to $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics, the phase transition phenomena showed up at the pressure of 2.5~4.6 GPa, but when B-site substitution donor $Nb^{5+}$ or $Sb^{5+}$ ion was added to it, the phase transition appeared at relatively lower pressure of 1.7~2.6 GPa.

• Korean Journal of Materials Research
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• v.33 no.6
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.261-268
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• 1991

The dielectric properties and microstructure of SrTiO3-based grain boundary layer (GBL) capacitor were investigated, and SrTiO3 GBL capacitor was made by penetrating the Frit (PbO-Bi2O3-B2O3 system). The Nb2O5-doped SrTiO3 ceramics were fired for 4-hours, at 145$0^{\circ}C$ in H2-N2 atomsphere to get semiconductive ceramics. The grain size of SrTiO3 sintered at reduction atmosphere had increased as the amount of Nb2O5 increases and then decreased as the amount of Nb2O5 exceeded 0.2 mole%. Insulating reagents which contained PbO-Bi2O3-B2O3 system frit and oxide mixture were printed on the each semiconductive ceramics and fired at varying temperature and for different holding time. The optimum dielectric properties could be obtained by second heat treatment at 110$0^{\circ}C$ for 1 hour, when frit paste was printed. A SrTiO3-based GBLC had the apparent permitivity of about 3.2$\times$104, the dielectric loss of 0.01~0.02 and the stable temperature coefficient of capacitance. The influence of frit paste on dielectric properties was similiar to that of oxide paste but the stability of temperature property of capacitance was improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.10-13
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• 1993

ln this study, x PSN - y PT - z PZ ceramics doped with w MnO$_2$were fabricated by the mixed oxide method at 1250[$^{\circ}C$] for 2[hr] and then the dielectric and pyroelectric properties were investigated. In the 0.05 PSN - 0.4 PT - 0.55 PZ specimen with 0.5[wt.%] MnO$_2$, the pyroelectric coefficient was 6.6${\times}$10$\^$-8/[C/cm$^2$$.$$^{\circ}C$], respectibly.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.41-44
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• 2014

In this paper, we will investigate the activation energies of Nb for $TiO_2$ using Hall effect measurement and photoluminescence (PL) system. Nb-doped $TiO_2$ thin film was grown on $SrTiO_3$ substrate by pulsed laser deposition (PLD) technique. After measurements, activation energies of niobium donor were 14.52 meV in Hall effect measurement, and 6.72 meV in PL measurement, respectively. These results showed different tendencies which are measured from the samples with acceptor materials. Therefore, it is thought that more research on activation energies for dopants of shallow donor level is expected.