• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.661-664
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• 1999

The piezoelectric properties and the doping effect of Nb$_2$O$_{5}$ for 0.95 PbZr$_{x}$ Ti$_{1-x}$ -O$_3$+0.05 Pb(Mnsub 1/3/Nb$_{2}$3/)O$_3$ compositions have been investigated. In the composition of 0.95PbZr$_{0.51}$Ti$_{0.49}$O$_3$+0.05Pb(Mn$_{1}$3/Nb/syb 2/3/)O$_3$ the values of k$_{p}$ and $\varepsilon$$_{33}$ $^{T}$ are maximized, but Q$_{m}$ was minimized (k$_{p}$ =0.57, Q$_{m}$ =1550). The grain size was suppressed and the uniformity of grain was improves with doping concentration of Nb$_2$O$_{5}$ far 0.95PbZr$_{0.51}$Ti$_{0.49}$O$_3$+0.05Pb(Mn$_{1}$3/Nb/syb 2/3/)O$_3$. sample. The values of k$_{p}$ first decreased slightly when a small amount of Nb$^{5+}$ is doped and then decreased when the Nb$^{5+}$ concentration is further increased. The Q$_{m}$ . OR the Other hand. increased monotonously with doping concentration of Nb$_2$O$_{5}$ .{5}$ . .

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.559-562
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• 2011

In this study, the effect of $Nb_2O_5$ and sintering time on the positive temperature of coefficient of resistivity (PTCR) behavior of lead free $Ba_{0.99}(Bi_{0.5}Na_{0.5})_{0.01}TiO_3$ (BBNT) ceramics were investigated in order to fabricate a PTC thermistor with high $T_c$ temperature more than $140^{\circ}C$. In particular, BBNT ceramic doped with 0.1mol% $Nb_2O_5$ and sintered at $1350^{\circ}C$ for 4 h has significantly increased Curie temperature ($T_c$) of about $200^{\circ}C$, showed good PTCR behavior of room-temperature resistivity ($\rho_{rt}$) of $40{\Omega}{\cdot}cm$, a high $\rho_{max}/\rho_{min}$ ratio of $43.78{\times}10^3$ and a large resistivity temperature factor (${\alpha}$) of 16.1%/$^{\circ}C$. With increasing addition of $Nb_2O_5$ content, the $\rho_{rt}$ decreased to a minimum value of $40\;{\Omega}cm$ at 0.1mol% $Nb_2O_5$ and the $\rho_{rt}$ increased for x value over 0.1 mol%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.149-152
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• 1997

High-power piezoelectric materials are being developed for applications such as actuators and ultrasonic motors. In this paper, ferroelectric property of iron-doped 0.57 (Sc$_{1}$2//Nb$_{1}$2/)O$_3$-0.43 PbTiO$_3$. which is the morphotropic phase boundary composition for the PSN-PT system, was investigated. The maximum dielectric constant ( $\varepsilon$$_{33}$/$\varepsilon$$_{0}$ = 2551) and the minimum dielectric loss(tan $\delta$ = 0.51 %) at room temperature were obtained at 01. wt% and 0.3 wt% of iron additions. With additions of the Fe$_2$O$_3$ the electromechanical coupling factor of radial mode k$_{p}$ and the piezoelectric coefficient d$_{33}$ were slightly decreased, on the other hand the mechanical quality factor was increased significantly. The highest mechanical quality factor (Qm= 297) was obtained at 0.3 wt% Fe$_2$O$_3$, which is 4.4 times larger than that of pure 0.57 PSN-0.43PT ceramics. The temperature dependence of the dielectric constant and dielectic loss was observed between 2$0^{\circ}C$ and 35$0^{\circ}C$ .X> .X> .

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1496-1498
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• 1994

In this study, x PSN - y PT - z PZ ceramics doped with w $MnO_2$ were fabricated by the mixed oxide method at 1250 [$^{\circ}C$] for 2[hr] and then the dielectric and pyroelectric properties were investigated. In the 0.05 PSN - 0.4 PT - 0.55 PZ specimen with 0.5[wt%] $MnO_2$ the Pyroelectrics coefficient was $6.6{\times}10^{-8}[C/cm^2.^{\circ}C]$, respectibly.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1119-1121
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• 1993

The PSN-PT-PZ ceramics doped with the Mn-oxide(0.5wt%) were fabricated by the mixed oxide method at 1250($^{\circ}C$) for 2(hr) and then the dielectric and pyroelectric properties were investigated with the compositions. In the 0.05PSN-0.4PT-0.55PZ specimen with 0.5(wt%) $MnO_2$, the pyroelectric coefficient was $6.6{\times}10^{-8}(C/Cm^2^{\circ}C)$, and the figure of merits for pyroelectric current and voltage were $27{\times}10^{-9},\;45{\times}10^{-12}$(C.Cm/J), respectibly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.632-635
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• 2003

[ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The dielectric properties were investigated for various composition ratio and $Nb_2O_5$ doping contents. All the BSCT thick films, sintered at $1420^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The Curie temperature and the relative dielectric constant decreased with increasing Ca content and $Nb_2O_5$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 1.0wt% $Nb_2O_5$ were 1410, 0.65% and 17.29% respectively.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.659-662
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• 2012

Yttrium (Y) and niobium (Nb) doped spherical $Li_4Ti_5O_{12}$ were synthesized to improve the energy density and electrochemical properties of anode material. The synthesized crystal was $Li_4Ti_5O_{12}$, the particle size was less than $1{\mu}m$ and the morphology was spherical and well dispersed. The Y and Nb optimal doping amounts were 1 mol% and 0.5 mol%, respectively. The initial capacity of the dopant discharge and charge capacity were respectively 149mAh/g and 143 mAh/g and were significantly improved compared to the undoped condition at 129 mAh/g. Also, the capacity retention of 0.2 C/5 C was 74% for each was improved to 94% and 89%. It was consequently found that Y and Nb doping into the $Li_4Ti_5O_{12}$ matrix reduces the polarization and resistance of the solid electrolyte interface (SEI) layer during the electrochemical reaction.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.3-11
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• 1995

$(TiO_{2})$ thin films were deposited on p-Si(100) substrate by APMOCVD using titanium isopropoxide as a source material. The deposition mechanism was well explained by the simple boundary layer theory and the apparent activation energy of the chemical reaction controlled process was 18.2kcal /mol. The asdeposited films were polycrystalline anatase phase and were transformed into rutile phase after postannealing. The postannealing time and the film thikness as well as the postannealing temperature also affected the phase transition. The C-V plot exhibited typical charateristics of MOS diode, from which the dielectric constant of about 80 was obtained. The capacitance of the annealed film was decreased but those of the Nb or Sr doped films were not changed. I-V characteristics revealed that the conduction mechanism was hopping conduction. The postannealing and the doping of Nb or Sr cause to decrease the leakage current and to increase the breakdown voltage.

• Journal of Ocean Engineering and Technology
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• v.24 no.6
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• pp.81-85
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• 2010

The effects of co-doping with complex dopants of softeners, $La^{+3}$ and/or $Nb^{+5}$, and a hardener, $Fe^{+3}$, on the microstructural and piezoelectric properties of PZT ceramics with a composition of a rhombohedral-tetragonal morphotropic phase boundary, $PbZr_{0.53}Ti_{0.47}O_3$, were investigated. Unlike single-element doping, the complex doping of both the softener and hardener ions led to various compensation effects for the piezoelectric properties of the PZT ceramics. For 0.5 wt.% $La_2O_3$ softener and/or 0.5 wt.% $Nb_2O_5$ doped compositions, there were apparent hardener doping (compensation) effects for an addition of over 1.0 wt.% $Fe_2O_3$. For the $La_2O_3$ and/or $Nb_2O_5$ doped composition, the co-dopant $Fe_2O_3$ addition led to lower kp and $\varepsilon$r, and increased $Q_m$ values. The prepared PZT ceramics modified with complex soft dopants, $La^{+3}$ and $Nb^+$, as well as a hard dopant, $Fe^{+3}$, showed that the piezoelectric properties were stable with the compositional variations, which made it possible to establish piezoelectric performances with higher reliability and reproducibility. The most improved piezoelectric properties of enhanced $Q_m$ with $\varepsilon_r$ remaining higher $k_p$, were obtained in the PZT composition complexly doped with $La^{+3}$ and $Fe^{+3}$. From the results obtained in this study, the properties of compositionally modified PZT ceramics can also be tailored over a wider range by changing the dopant compositions to meet the specific requirements for underwater or other applications.